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H11AV1 Datasheet

Part Manufacturer Description PDF Type
H11AV1 Fairchild Semiconductor PHOTOTRANSISTOR OPTOCOUPLERS Original
H11AV1 Fairchild Semiconductor Optoisolator Transistor Output Original
H11AV1 Isocom Components 6V, 60mA optically coupled isolator phototransistor output Original
H11AV1 Motorola 6-pin DIP Optoisolator Transistor Output Original
H11AV1 Opto 6 Pin, DIP, Phototransistor Detector w/ Base, CTR 100-300 @ 10mA, 10V Optocoupler Original
H11AV1 General Electric Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-transistor. Scan
H11AV1 Isocom Components Optoelectronics Data Book 1996 Scan
H11AV1 Motorola Switchmode Datasheet Scan
H11AV1 Motorola Optoelectronics Device Data 1988 Scan
H11AV1 TRW Dual In-Line Package Isolators Scan
H11AV1A Fairchild Semiconductor Optoisolator Transistor Output Original
H11AV1A Fairchild Semiconductor 6-Pin DIP High BVceo 0.4" Leadform Phototransistor Output Optocoupler Original
H11AV1A Motorola 6-pin DIP Optoisolator Transistor Output Original
H11AV1A General Electric Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-transistor. Scan
H11AV1A Motorola Switchmode Datasheet Scan
H11AV1A Motorola Optoelectronics Device Data 1988 Scan
H11AV1AM Fairchild Semiconductor Original
H11AV1A-M Fairchild Semiconductor 6-PIN DIP Optoisolator Transistor Output Original
H11AV1A-M Fairchild Semiconductor 6-Pin DIP Optoisolators Transistor Output Original
H11AV1AM_NL Fairchild Semiconductor 6-Pin DIP High BVceo 0.4" Leadform Phototransistor Output Optocoupler Original
Showing first 20 results.

H11AV1

Catalog Datasheet MFG & Type PDF Document Tags

H11AV1A

Abstract: H11AV2A BVceo Phototransistor 6-PIN, DIP Product H11AV1FR2-M H11AV1FV-M H11AV1V-M H11AV1SR2-M Product , :///D|/fair/pdf/H11AV1A-M.html Product H11AV1AV-M H11AV1A-M Product status Full Production Full , TAPE REEL BULK BULK TAPE REEL BULK BULK H11AV1SR2V-M Full Production H11AV1F-M H11AV1SV-M Full Production Full Production H11AV1FR2V-M Full Production H11AV1S-M H11AV1-M Full Production Full Production , Capacitance (f = 1 MHz, VCE = 10 V) COUPLED Output Collector Current (IF = 10 mA, VCE = 10 V) H11AV1, H11AV1A
Fairchild Semiconductor
Original
H11AV2 H11AV2A H11AV2-M H11AV2FR2V-M H11AV2FV-M H11AV2SR2-M H11AV2V-M

H11AV1

Abstract: H11AV2 Collector Current (IF = 10 mA, VCE = 10 V) H11AV1, H11AV1A H11AV2, H11AV2A IC (CTR)(2 , MOTOROLA Order this document by H11AV1/D SEMICONDUCTOR TECHNICAL DATA H11AV1,A* H11AV2,A , % Min] *Motorola Preferred Devices The H11AV1,A and H11AV2,A devices consist of a gallium arsenide , Data 1 H11AV1,A H11AV2,A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1 , ) H11AV1,A H11AV2,A 7 5 NORMALIZED TO TA = 25°C 2 1 0.7 0.5 0.2 0.1 ­60 ­40 100
Motorola
Original
8UA18 730A-04 H11AV1 Application h11av2 equivalent H11AV1/D

H11AV1

Abstract: E244343 Global Supplier of Optoelectronic Solutions H11AV1 ALL Product Lead Free, RoHs Compliant , : 972-886-0078 Email: sales@optoinc.com Global Supplier of Optoelectronic Solutions H11AV1 ALL Product , Optoelectronic Solutions H11AV1 ALL Product Lead Free, RoHs Compliant UL # E244343 Fig.6 Collector , Compliant H11AV1 UL # E244343 G ©COPYRIGHT 2004 OPTO INC. www.optoinc.com Telephone: 972-886-0018 , Product Lead Free, RoHs Compliant H11AV1 UL # E244343 ©COPYRIGHT 2004 OPTO INC. www.optoinc.com
Opto
Original
OPTO611 5300V 7500V

H11AV1A

Abstract: H11AV1 10 V) H11AV1, H11AV1A H11AV2, H11AV2A Collector­Emitter Saturation Voltage (IC = 2 mA, IF = 20 mA , H11AV1,A H11AV2,A GlobalOptoisolatorTM 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to , . 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE H11AV1,A H11AV2,A ELECTRICAL , ) H11AV1,A H11AV2,A 7 5 NORMALIZED TO TA = 25°C 2 1 0.7 0.5 0.2 0.1 ­60 ­40 100
Fairchild Semiconductor
Original

H11AV1A

Abstract: H11AV2 /N H11AV1-M - 6-Pin High BVceo Phototransistor 6-PIN, DIP H11AV1FR2-M H11AV1SR2V-M H11AV1F-M H11AV1SR2-M H11AV1-M H11AV1FV-M H11AV1FR2V-M H11AV1V-M H11AV1S-M H11AV1SV-M Full Production Full Production , -PIN, DIP H11AV1AV-M H11AV1A-M * 1,000 piece Budgetary Pricing Full Production Full Production , Capacitance (f = 1 MHz, VCE = 10 V) COUPLED Output Collector Current (IF = 10 mA, VCE = 10 V) H11AV1, H11AV1A , © Copyright 2002 Fairchild Semiconductor space Product Folder - Fairchild P/N H11AV1-M - 6-Pin High BVceo
Fairchild Semiconductor
Original
H11AV2FR2-M H11AV2F-M H11AV2S-M H11AV2SR2V-M H11AV2SV-M P01101866
Abstract: , V q e = 10 V) H11AV1, H11AV1A H11AV2, H11AV2A Collector-Emitter Saturation Voltage (Iq = 2 mA, Ip , MOTOROLA Order this document by H11AV1/D SEMICONDUCTOR TECHNICAL DATA ©®® TO VDE UL CSA SE TI SEM KO DEM KO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min , ] â'™ M otorola Preferred Devices The H11AV1,A and H11AV2,A devices consist of a gallium arsenide , Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 ^) A MOTOROLA H11AV1/D -
OCR Scan

H11AV2A

Abstract: h11av2 Optofsolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator , ard 0730-2P. T h e H11AV1A, H11AV2A a n d HI1AV3A are lead-form ed versions o f th e H11AV1, H11AV2 a , Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A individual electrical characteristics (25° C , MEASUREMENTS APE MADE FROM THE SEATING PLANE 4 FOUR PLACES H11AV1, H11AV2, H11AV3 SEATING PLANE P H O , Output). 5304 V1|1(, 3750 VlKM v Nominal Voltage 500 600 V, Isolation G roup C H11AV1A, H11AV2A
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OCR Scan
H11AV1A harris H11AV3T H11AV

1AV3A

Abstract: H11AV1A |3fi750fll 001^707 1 J H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A_Optoelectronic Specifications T'M , TEMPERATURE 232 E SOLI» STATE 01 H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A- DE|3fl750ûl GOnTOT S , '" A- â r"l A A 3 1* 1 {top viewi s 4 e 1 Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State , , H11AV2A and HI 1AV3A are lead-formed versions of the H11AV1, H11AV2 and H11AV3. These devices are also
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OCR Scan
1AV3A 1av3 VDE0750TI VDE0804 ic 5304 1a

H11AV1

Abstract: e = 10 V) H11AV1, H11AV1A H11AV2, H11AV2A C o lle cto r-E m itte r Saturation Voltage (I q = 2 mA , MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by H11AV1/D & VDE , Output T he H11AV1,A and H 11AV2,A d e vice s co n sist of a ga llium arse nide infrared em itting diode , olt V ( B R ) C E O M inim um H11AV1,A* H11AV2,A [C TR = 100% Min] [C TR = 50% Min] 'M o to ro la , -0 H11AV1/D H11AV1/D
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OCR Scan

H11AV2A

Abstract: H11AV1A harris optoelectronic speculations- T -H Ã-S 3 Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A , , H11AV2A, H11AV3A 1 G E SOLID STATE 01E H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A , 01E 19708 D Optoelectronic Specifications- H11AV1, H11AV2, H11AV3, H11AV1A , 3875081 G E SOLID STATE 01E H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A HARRI S , H11AV1, H11AV2, H11AV3 â'¢Derate 1.33 mW/°C above 25°C ambient. P H O T O -T R A N S IS T O R P
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OCR Scan
43G2271 92CS-42662 92CS-429S1

H11AV2A

Abstract: H11AV3A SC ( DIODES/OPTO ) L4E D L.3L.725S OOflbbMM 4S^ h o t ? H11AV1, H11AV1A, H11AV2 , nA Volts Volts Volts pF COUPLED Output Collector Current Of = 10 mA, V^g = 10 V) H11AV1, H11AV1A , ? H11AV1, H11AV1A, H11AV2, H11AV2A, H11AV3, H11AV3A - 6 0 - 4 0 V c e . C O L LE C T O R E M IT T E R V , »M0T7 H11AV1, H11AV1A, H11AV2, H11AV2A, H11AV3, H11AV3A Im A ) if ; - 0 lB = 8 / iA 7pA , s is to r O u tp u t The H11AV1,A, H11AV2,A and H11AV3.A devices consist of a gallium arsenide
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OCR Scan
diode b3l 730D-05

H11AV1A

Abstract: H11AV2A ? H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoelectronic Specifications individual , 0Cm70ö 3 | Optoelectronic Specifications- H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A , clearance requirements, for business machine applications per VDE standard 0730-2P. The H11AV1A, H 11AV2A , available in Surface-Mount packaging. FEA TU R ES Photon Coupled Isolator H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A - A r M A 3 !· {TO P V IEW ) -L-V W · · '· · · · ·
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OCR Scan
11AV3A

H11AV2A

Abstract: H11AV3A s 4. 5 a n d 6 are c o m m o n . H11AV1, H11AV1A, H11AV2, H11AV2A, H11AV3, H11AV3A ELECTRICAL , pF COUPLED Output Collector Current (Ip = 10 m A, V q £ = 10 V) H11AV1, H11AV1A H11AV2 , es Figure 8. Turn-Off Sw itch in g Tim es 6-35 H11AV1, H11AV1A, H11AV2, H11AV2A, H11AV3 , versus Input Current 6-34 H11AV1, H11A V I A, H11AV2, H11AV2A, H11AV3, H11AV3A g & 0.7 05
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OCR Scan
aiou ge h11a transistor BC 176 E54915 IEC380/VDE0806 IEC435/VDE0805 IEC65/VDE0860 IEC204/VDE0113 VDE0160

1AV3A

Abstract: Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs , 15® 015 175 115 115 270 240 H11AV1. H11AV2, H11AV3 PHOTO-TRANSISTOR Power Dissipation ,   Optolsolator specifications ÚTY H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A , H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A TYPICAL CHARACTERISTICS 2. INPUT , _Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A MOUNTING THE H11AV CURRENT
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OCR Scan
0QD417R

H11AV3A

Abstract: H11AV1A < §> B S N EM KO BAB T 6-Pin D IP O ptoisolators Transistor Output T he H11AV1.A, H 11A V 2.A and , = 1 MHz, V c e - 10 V) COUPLED Output Collector Current (Ip = 10 mA, Vce = 10 V) H11AV1, H11AV1A , Switching Circuits · Interfacing and coupling system s of different potentials and im pedances H11AV1,A , 4-30 H11AV1, H11AVI A, H11AV2, H11AV2A, H11AV3, H11AV3A ELECT RIC A L C H A R A C T E R IS T IC S , Figure 2. Output Current versus Input Current 4-31 H11AVI, H11AV1A, H11AV2, H11AV2A, H11AV3
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OCR Scan

eh11a

Abstract: 1AV Series Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator , . T h e H11AV1A, H11AV2A a n d H11AV3A are lead-form ed versions o f th e H11AV1, H11AV2 a n d H11AV3 , # Optolsolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A individual , 232 Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A MOUNTING THE , MEASUREMENTS ARE MADE FROM THE SEATING PLANE 4 FOUR PLACES 6 v o lts H11AV1, H11AV2, H11AV3 m W /°
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OCR Scan
eh11a 1AV Series

transistor c1684

Abstract: h11av2 equivalent QUALITY TECHNOLOGIES TRANSISTOR OUTPUT OPTOCOUPLER H11AV1 H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A PACKAGE DIMENSIONS DESCRIPTION The H11AV series consists of a gallium arsenide infrared emitting diode coupled with an NPN silicon phototransistor in a dual-in-line package. The H11AV1A, H11AV2A and , V, F = 1 MHz TRANSFER CHARAC'rERISTICS (2 5 C DC CHARACTERISTICS Current transfer ratio H11AV1 , . Switching Time Test Circuit and Waveform H11AV1 H11AV2 H11AV3 1-92
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OCR Scan
transistor c1684 OPTOCOUPLER 636 CL685 113t 380/VDE C1285 C1679 C1680 C1681 C1683

E91231

Abstract: H11AV H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead forms : l - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P96101299 Fimko - Registration No. 190469-01.22 Semko - , Current Transfer Ratio (CTR) H11AV1 H11AV2 H11AV3 100 50 20 Collector-emitter Saturation
ISOCOM Components
Original
DB92055-AAS/A1

BSI approved - Certificate No. 8001

Abstract: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l Dimensions in mm 2.54 7.0 6.0 1.2 7.62 6.62 7.62 4.0 3.0 0.5 3.0 0.5 3.35 0.26 13° Max 1 2 3 6 5 4 VDE 0884 in 3 available lead form : - STD - G form l l - SMD approved to CECC 00802 Certified to EN60950 by the , Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) H11AV1 H11AV2 H11AV3
ISOCOM Components
Original
BSI approved - Certificate No. 8001 P01102464 FI18166 DB92055

SMD 6 PIN IC

Abstract: h11av2 equivalent H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P96101299 Fimko - Registration No. 190469-01.22 Semko - , Current (ICEO) 50 Current Transfer Ratio (CTR) H11AV1 H11AV2 H11AV3 100 50 20
ISOCOM Components
Original
SMD 6 PIN IC

H11AV2 8360

Abstract: H11AV1 Application diode driving a silicon phototransistor in a 6-pin dual in-line white package. FEATURES · H11AV1 , Conditions Symbol Device Min H11AV1 H11AV1A 100 H11AV2 H11AV2A Typ* Max Unit , H11AV1SR2V-M MARKING INFORMATION 1 H11AV1 X YY Q V 3 2 6 4 5 White Package
Fairchild Semiconductor
Original
H11AV2A-M H11AV2 8360 E90700

H11AV2A

Abstract: H11AV1A MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO VDE UL & ® ® ® ® ® C8A 8ET1 SEMKO DEMKO NEMKO BABT GlobalOptoisolatorTM 6-Pln DIP Optoisolators Transistor Output The H11AV1 ,A and H11 AV2.A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. · Guaranteed 70 Volt V(BR)CEO Minimum · `A' Suffix = 0.400" Wide Spaced Leadform (Same , utput Collector C urrent (Ip - 10 mA, V c e - 1 0 V) H11AV1, H11AV1A H11AV2, H11AV2A C o lle ctor-E m
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OCR Scan
AV2A

ISTS201

Abstract: IS1020 Number H11AV1 H11AV2 H11AV3 H24A1 H24A2 IS1100 IS1050 IS1020 IS1100G IS1050G IS1020G Features Current , H11AA1 H11AV1 H11AV2 H11AV3 H11B1 H11C4 H11C5 H11C6 H1101 H11D2 H11D3 o t/l Page Part H1104
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M003040 ISTS823A ISTS201 ISTS2001 MOC 4N35 ists824 H21A IQ4000 MOC3030 MOC3031 MOC3032 MOC3041 MOC3042
Showing first 20 results.