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LM5113TME/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA visit Texas Instruments Buy
LM5113SDX/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125 visit Texas Instruments Buy
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LM5113TMX/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 12-DSBGA visit Texas Instruments
LM5113SD/NOPB Texas Instruments 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125 visit Texas Instruments Buy

Gan hemt transistor

Catalog Datasheet MFG & Type PDF Document Tags

InP transistor HEMT

Abstract: Class E amplifier frequency range. A Class E amplifier with a similar GaN HEMT transistor from Cree has been demonstrated to , GaN HEMT transistor. II. DESIGN The GaN HEMT devices on a SiC substrate used in this amplifier were , field-plated GaN HEMT transistor of the same gate periphery and pad layout from Cree. No major modifications , 2130 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 10, OCTOBER 2007 A GaN HEMT Class F , , IEEE Abstract-A Class F amplifier has been designed, fabricated, and tested using a GaN HEMT
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Gan hemt transistor

Abstract: class d amplifier theory , and tested using a GaN HEMT transistor and a hybrid PCB. The amplifier has a peak PAE of 85 % with an , range. A Class E amplifier with the same GaN HEMT transistor has been demonstrated to have 85% PAE and , the same transistor. This paper demonstrates a successful Class F amplifier design using a GaN HEMT , A GaN HEMT Class F Amplifier at 2 GHz with > 80 % PAE David Schmelzer, Student Member, IEEE, and , Class F, Inverse F, GaN HEMT operating frequency of 2 GHz. To the authors' knowledge, there has not
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transistor c3909

Abstract: pt 2358 APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New , Cree CGH40025F GaN HEMT transistor. This device operates from a nominal 28 volt rail. The transistor , the new self-heating feature of Cree's large-signal GaN HEMT models to calculate transistor , Cree's GaN HEMT large-signal models automatically effects both DC and RF parameters as a function , voltage. Even though GaN/AlGaN on SiC substrates have high thermal conductivity, it is necessary to be
Cree
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transistor c3909 pt 2358 Voltmeter of38dBm transistor DB p16 Gan hemt transistor x band APPNOTE-006

transistor p98

Abstract: P99 transistor APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New , , 2 to 6 GHz, power amplifier utilizing a Cree CGH40025F GaN HEMT transistor. This device operates , demonstration of how to use the self-heating feature of Cree's large-signal GaN HEMT models to calculate , . Even though GaN/AlGaN on SiC substrates have high thermal conductivity it is necessary to be aware of , efficiencies can vary considerably as a function of frequency. A new self-heating feature in Cree's GaN
Cree
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transistor p98 P99 transistor 100 p38 transistor transistor nc p79 p88 transistor Gan hemt transistor

Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications

Abstract: CGH55030 Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications Bradley J , power) GaN HEMT amplifiers for WiMAX signal protocols have been designed and fabricated for use in the , resonates in-band, to short out the damping resistor that is included for low frequency stability. GaN HEMT , CGH55030-TB amplifier circuits with GaN HEMT devices IV. MEASURED CIRCUIT PERFORMANCE Both devices were , signal performance of the CGH55015-TB and CGH55030-TB amplifier circuits with GaN HEMT devices Figure
Cree
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CGH55030 Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications GaN Bias 25 watt Tower Mounted Amplifiers MICROWAVE TRANSISTOR cgh55015 CGH55015

ofdm predistortion

Abstract: CGH21120 efficient GaN HEMT microwave transistor for generalpurpose military and industrial applications such as , GaN HEMT transistor based high power amplifiers. MICROWAVE ENGINEERING EUROPE Free subscription , May 2009 Short range wireless (UWB) GPS and satellite GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based power
Cree
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ofdm predistortion CGH21120 transistors cross reference digital Pre-distortion CGH25120F cgh40120F CGH40120F

GaN ADS

Abstract: LDMOS achieved at 0.9 and 2.1GHz for a wide band-gap gallium nitride (GaN) HEMT transistor and 12W fundamental , knee-walkout effect [2-3]. In this study a 10W GaN HEMT was used. Measurements were carried out at two , planes for 28V drain voltage at 0.9GHz and 2.1GHz. III. GAN HEMT IN INVERSE CLASS-F MODE A. Inverse , purpose the drain bias voltage was increased above 28V to 35 and 40V, respectively. The same GaN HEMT , with the very low knee voltage, inherent with this GaN HEMT device technology, offers the possibility
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GaN ADS LDMOS 3RD Rail Engineering

GaN ADS

Abstract: power transistor gan s-band Raymond S. Pengelly of Cree Inc. for supplying the GaN HEMT transistor samples used in this study. R , proposed design concept, a PA is implemented using 45-W GaN HEMT device at 2.655 GHz. The designed PA has , . Compared to comparable high-power PAs using a packaged GaN HEMT, operating at the frequency of 2 GHz­3 GHz , K. Joshin, "Highpower and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage," in , . Shealy, "High power, high efficiency, AlGaN/GaN HEMT technology for wireless base station applications,"
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power transistor gan s-band simple circuit diagram of samsung mobile with int CGH40045 Mobile WiMAX abstract maek multi 9

STR W 5456 A

Abstract: CGH40010 Large Signal Model chosen a gallium nitride (GaN) high-electron-mobility transistor (HEMT) from Cree because the device , and Tom Dekker of Cree Inc. for supplying the GaN HEMT transistor samples. References [1] J , : A GaN HEMT amplifier with 6-W output power and >85% power-added efficiency," IEEE Microwave Mag , transistor, but the matching topology of the PA should be easily realizable [4]­[6]. The potential of , load impedance considering the knee region of the transistor, can generate high efficiency even in the
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LMV552 STR W 5456 A CGH40010 Large Signal Model TDA7000 CGH40010 TDA7000 equivalent tea57

transistor GaN

Abstract: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 (Flanged) ï'·ï'  GaN Depletion-Mode HEMT Microwave Transistor , -000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Rev. V3 Absolute , / Fax: 81.44.844.8298 MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W , / Fax: 81.44.844.8298 MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W
M/A-COM
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transistor GaN MAGX-000035-01000X

HEMT 36 ghz transistor

Abstract: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Features · · · · · · · · GaN depletion mode HEMT microwave transistor Common source , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak , . MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak
M/A-COM
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HEMT 36 ghz transistor EAR99

MAGX-003135-120L00

Abstract: 003135 MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10 , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak
M/A-COM
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003135 03135-120L00
Abstract: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 , -001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev , -001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse , : 81.44.844.8298 MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak , -001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev M/A-COM
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MAGX-001090-SB0PPR 2002/95/EC
Abstract: MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10 , : 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak , : 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak , : 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse , : 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse M/A-COM
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MAGX-000035045000 MAGX-S10035-045000
Abstract: MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 , -001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev , -001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse , : 81.44.844.8298 MAGX-001090-600L00 MAGX-001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak , -001090-600L0S GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty Rev M/A-COM
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MAGX-A11090-600L00
Abstract: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10 , -003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 , -003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 , information contained herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak M/A-COM
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120L00
Abstract: MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500W Peak , / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor , -001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty Rev. V1 , : 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500W Peak , / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor M/A-COM
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GX1214-500L GX1214-500LS

GaN ADS

Abstract: CGH40010 Large Signal Model assuming that the transistor is an ideal current source. Among the many different device types, GaN HEMT , A High Power, High Efficiency Amplifier using GaN HEMT Bumjin Kim, D. Derickson, and C. Sun , csun@calpoly.edu, 805-756-2004 Abstract-A class B and a class F power amplifier are described using a GaN HEMT , Terms-Power Amplifier, High Power, High Efficiency, GaN HEMT, Power Added Efficiency. I. INTRODUCTION , efficiency of 100% can be achieved. B. GaN HEMT The efficiency of the amplifier is limited by the
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AlGaN/GaN HEMTs CGH40010 ads Cree Microwave class d amplifier theory Class E amplifier class E power amplifier
Abstract: MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak , / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor , -001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse , -001214-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V2 , / Fax: 81.44.844.8298 MAGX-001214-500L00 MAGX-001214-500L0S GaN on SiC HEMT Pulsed Power Transistor M/A-COM
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MAGX-001214-SB3PPR MAGX-002114-500L00 MAGX-002114-500L0S
Abstract: MAGX-001214-650L00 GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Features Rev. V1 MAGX-001214-650L00 ï'· GaN on SiC Depletion-Mode Transistor , -001214-650L00 GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty Rev. V1 , ://www.macomtech.com/content/customersupport Rev. V1 MAGX-001214-650L00 GaN on SiC HEMT Pulsed Power Transistor , gold-metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed M/A-COM
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MAGX-L21214-650L00
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