NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| GT80J101A | Toshiba | Discrete IGBTs |
15 pages, |
Original |  |
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| GT80J101A | Toshiba | TRANS IGBT CHIP N-CH 600V 80A 3(2-21F1C) |
6 pages, |
Original | |
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| GT80J101A | Toshiba | Silicon N Channel IGBT |
5 pages, |
Original | |
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| GT80J101A | Toshiba |
5 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High , code) TOSHIBA GT80J101A Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-06 GT80J101A Electrical Characteristics (Ta = 25°C) Characteristics , (j-c) 2 V pF us °C/W 2004-07-06 GT80J101A IC - VCE VCE - VGE 10 100 10 , Tc 120 160 (°C) 2004-07-06 GT80J101A Switching time  RG 10 Common emitter RL ... | Original |
6 pages, |
GT80J101A GT80J101 GT80J101A abstract |
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| Abstract: GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High , Rth (j-c) 1 V pF us °C/W 2002-01-18 GT80J101A IC - VCE VCE - VGE 100 , 2 120 160 (°C) 2002-01-18 GT80J101A Switching time  RG 10 Common emitter RL , 102 (s) 2002-01-18 GT80J101A Reverse Bias SOA 300 30 Collector current IC (A , 500 Collector-emitter voltage VCE 600 700 (V) 4 2002-01-18 GT80J101A ... | Original |
5 pages, |
GT80J101A GT80J101A abstract |
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| Abstract: GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT80J101A High , VOUT 3.75 Gate-emitter cut-off voltage us °C/W 2001-06-07 GT80J101A IC - VCE , V) GT80J101A 101 100 10-1 10-2 10-3 10-5 1000 (V) Tc = 25 °C 10-4 10-3 10-2 Pulse width 3 10-1 tw 100 101 102 (s) 2001-06-07 GT80J101A , 600 700 (V) 4 2001-06-07 GT80J101A RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · ... | Original |
5 pages, |
GT80J101A GT80J101A abstract |
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| Abstract: GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT80J101A High Power Switching Applications · Enhancement-Mode · High Speed: tf = 0.40 us (max) (IC = 80 A , 1/4 GT80J101A IC - VCE VCE - VGE 100 10 10 Tc = 25 °C VCE 80 , QG 20 Collector current (Ã-10 V) GT80J101A Tc = 25 °C 101 100 10-1 10-2 10-3 10-5 , GT80J101A Reverse Bias SOA 300 Collector current IC (A) 100 30 10 3 1 0.3 0.1 0 ... | Original |
4 pages, |
GT80J101A GT80J101A abstract |
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| Abstract: 5.1 , , , FRD ( ) IH IH GT80J101A 80 60 GT50G321 GT50G321 50 GT40G121 GT40G121 GT50J102 GT50J102 , GT80J101A 600 V/80 A 0.40 3.0 15 V/80 A TO-3P (LH) GT50J102 GT50J102 600 V/50 A 0.30 , GT80J101A *GT25Q102 GT25Q102 1500 GT40T101 GT40T101 400 GT50G321 GT50G321 GT5J301 GT5J301 GT10J301 GT10J301 GT15J301 GT15J301 GT20J301 GT20J301 ... | Original |
12 pages, |
MG50J2YS50 MG200Q1US41 MG150Q2YS50 GT25Q101 sm 170 220 GT8Q101 transistor mig50q7csa0x IGBT GT25J101 MG100J2YS50 GT60N321 MIG75Q7CSA0X MG75Q2YS50 MP6752 mg300j2ys50 MG800J2YS50A MG800J2YS50A abstract |
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| Abstract: GT40T301 GT40T301 GT40T101 GT40T101 25 600 GT50J322 GT50J322 GT60J321 GT60J321 GT60J322 GT60J322 GT80J101A 120 15 Hard switching , ) 2.45 15 V / 50 A TO-3P (LH) GT80J101A 100 V to 240 V 0 V, 1500 V 400 V / 50 A , GT60M303 GT60M303 GT60M303 GT60M303 GT50J102 GT50J102 GT80J101A GT60J321 GT60J321 GT10J303 GT10J303 GT10J312 GT10J312 GT10Q101 GT10Q101 GT10Q101 GT10Q101 GT15Q311 GT15Q311 ... | Original |
15 pages, |
IGBT GT25q101 GT8G132 GT8G131 GT8G121 GT8G103 GT60J101 S5J12 S5783 GT15Q101 GT20J321 mosfet 500V 50A GT8G101 GT60N321 MG60M1AL1 BCE0010A BCE0010A abstract |
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| Abstract: Built-in FRD 400V GT80J101A 80A Under development (GT60N321 GT60N321 ) GT60M303 GT60M303 GT60M302 GT60M302 GT60M301 GT60M301 , Voltage Device VCES / IC FRD tf ( s) max VCE (sat) max (V) Package GT80J101A ... | Original |
15 pages, |
GT8G101 S5783F igbt induction cooker gt50m101 500V N-Channel IGBT TO-3P transistor gt25q101 600V 20A N-Channel MOSFET TO-3P GT40T101 GT15N101 GT8Q101 Transistors Bipolar NPN TO-3P S5J25 GT60M101 datasheet abstract |
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| Abstract: GT60M104 GT60M104 GT60M105 GT60M105 GT60M301 GT60M301 GT60M302 GT60M302 GT60M305 GT60M305 GT60M322 GT60M322 GT60N323 GT60N323 GT80J101 GT80J101 GT80J101A GT8J101 GT8J101 GT8J102 GT8J102 ... | Original |
16 pages, |
GT45F124 GT50J101 mg60m1al1 GT45G124 GF30F123 gt30g123 IGBT GT30F123 IGBT GT30F124 GT45F128 GT45G122 gt30g124 GT30F125 gt45f123 gt30f122 datasheet abstract |
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| Abstract: GT60M104 GT60M104 GT60M105 GT60M105 GT60M301 GT60M301 GT60M302 GT60M302 GT60M305 GT60M305 GT60M322 GT60M322 GT60N323 GT60N323 GT80J101 GT80J101 GT80J101A GT8J101 GT8J101 GT8J102 GT8J102 ... | Original |
16 pages, |
MG30T1AL1 GT45 GF30F123 GT15N101 GT50J101 MG60M1AL1 GT50N322 GT45F123 GT50T101 GT30F125 gt30g122 GT45G127 IGBT GT30J124 gt30g123 gt30g124 datasheet abstract |
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| Abstract: GT60M105 GT60M105 GT60M301 GT60M301 GT60M302 GT60M302 GT60M305 GT60M305 GT60M322 GT60M322 GT60N323 GT60N323 GT80J101 GT80J101 GT80J101A GT8J101 GT8J101 GT8J102 GT8J102 GT8N101 GT8N101 ... | Original |
16 pages, |
GT45F128 gt30g123 GT45G127 GT45G122 gt30g122 GT30F125 gt60m303 application notes GT45f122 Series GT45F12 MG30T1AL1 gt30f122 IGBT GT30J124 replacement for GT30F124 GT50N322 datasheet abstract |
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| Abstract: (LH) TO-3P(LH) TO-3P(LH) 600 80 TO-3P(L) GT80J101A GT8J101 GT8J101 GT8J102 GT8J102 GT8N101 GT8N101 GT8Q101 GT8Q101 ... | Original |
16 pages, |
GT15N101 GT50M101 igbt rice cooker motorola DIODE 1N751A 808 mg30t1al1 GT50J101 diagram rice cooker induction cooker circuit diagram GT45F124 mg60m1al1 diagram induction cooker gt60n323 GT50N322 datasheet abstract |
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| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |