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GC smd diode

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Abstract: PHOTO DIODE HEAT SINKS THIN FILM CHIP RESISTORS SMD POTENTIOMETERS CAPS., INDUCTORS, RF PRODUCTS , measurement. (IIP2 = 2 * P1 ­ P2 ­ Gc, where P1 is the power level of the desired output at 1900MHz, P2 is the largest 2nd order product at either 1850MHz or 2050MHz, and Gc is conversion gain. P1 and P2 are in units of dBm, and Gc is in dB.) SPECTRUM ANALYZER SIGNAL GENERATOR 1 POWER SUPPLY , distortion measurement. (IIP3 = P1 + (P1 ­ P3) / 2 ­ Gc, where P1 is the lowest power level of the two Linear Technology
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LT5511 RF2138 RF2140 ALLEN BRADLEY DIPS smd diode 708 power combiner toroid smd 805 DC426B 1900MH 950MH 1950MH
Abstract: diode mixers. Unlike passive mixers, which have conversion loss and require high LO drive level, the , Gc, where P1 is the lowest power level of the two desired output tones at either 569.9MHz or 570.1MHz, P3 is the largest 3rd order product at either 569.7MHz or 570.3MHz, and Gc is conversion gain. P1 and P3 are in units of dBm, and Gc is in dB.) SIGNAL GENERATOR 1 SIGNAL GENERATOR 2 , ) 564-0100 PC MOUNT BNC APEM (718) 246-1007 SMD TOGGLE/PB SWITCH API DELEVAN (716) 652-3600 Linear Technology
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DC503A LT5512 IR PHOTO DIODE mpc 1230 diode 717 smd power combiner broadband transformers sprague 716 1230MH 270-870MH 1500MH 2100MH
Abstract: PD - 9.1142 IRGBC30KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE , IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of , motor control and other applications requiring short circuit withstand capability. SMD-220 Absolute , Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time , Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, (PCB Mount)* Junction-to-Ambient, typical International Rectifier
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SMD-220 AN-994
Abstract: PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE , IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of , motor control and other applications requiring short circuit withstand capability. SMD , Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time , Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, (PCB Mount)* Junction-to-Ambient, typical International Rectifier
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g10 smd transistor
Abstract: PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE , IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of , motor control and other applications requiring short circuit withstand capability. SMD , Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time , Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, (PCB Mount)* Junction-to-Ambient, typical International Rectifier
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gFE smd diode
Abstract: PHOTO DIODE HEAT SINKS THIN FILM CHIP RESISTORS SMD POTENTIOMETERS CAPS., INDUCTORS, RF PRODUCTS , measurement. (IIP2 = 2 * P1 ­ P2 ­ Gc, where P1 is the power level of the desired output at 1900MHz, P2 is the largest 2nd order product at either 1850MHz or 2050MHz, and Gc is conversion gain. P1 and P2 are in units of dBm, and Gc is in dB.) SPECTRUM ANALYZER SIGNAL GENERATOR 1 POWER SUPPLY , distortion measurement. (IIP3 = P1 + (P1 ­ P3) / 2 ­ Gc, where P1 is the lowest power level of the two Linear Technology
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LL1005-FH3N9J CJ05-000 LDB211G9010C-001 nec 2501 Allen Bradley POTENTIOMETERS PFC-W0603R 2501 OPTO ELECTRONIC TRASFORMER 50-OHM GRM36COG1R0J025AQ GRM36COG2R7J025AQ GRM36COG220J025AQ 04023A101JAT 04023A221JAT
Abstract: ) GA(0) GA(2) TGR SWC VCC RSTB SMD(0) SMD(1) GC(1) GB(1) GA(1) DIRTKN GND TST(7) TST(6) TST(5 , RTKNB TST(0) TST(1) TST(2) TST(3) TST(4) TST(5) TST(6) GND DIRTKN GA(1) GB(1) GC(1) SMD(1) SMD(0) RSTB , organic light emitting diode (OLED) display column driver. It can also be used to drive other types of , ) GB(3bits) GC(3bits) RG 192 x 1 BiDirection Shift Register 6-Bit Up Counter Output Mapping , open or tied to VDD. GA(2-0) GB(2-0) GC(2-0) STBY I I I I SDM(1-O) I SWC I TST(9-0 CP Clare
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oled display driver MXED101 192-C 1-800-27-CLARE DS-MXHV826-R0A
Abstract: PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE , of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a , . SMD-220 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ , Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time , RJC RJC RJA RJA Wt Min. Junction-to-Case - IGBT Junction-to-Case - Diode International Rectifier
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transistor c373 c380 transistor transistor c375 transistor c380 o transistor c380 C380 ge C-379 C-380
Abstract: BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C , 's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one , requiring short circuit withstand capability. SMD-220 Absolute Maximum Ratings Parameter VCES IC @ T , Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short , - Diode Junction-to-Ambient, (PCB Mount)* Junction-to-Ambient, typical socket mount Weight International Rectifier
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transistor c374 C374
Abstract: REST OF 192 CHANNEL OUTPUT PADS DB(4) GA(2) TGR SWC VCC RSTB SMD(0) SMD(1) GC(1) GB(1 , Organic Light Emitting Diode (OLED) displays. Each of the 192 current outputs is designed to act as a , LE CLKEX STBY SDM(1-0) Output Mapping/ Current Programming GG GA(2-0) GB(2-0) GC(2-0 , ) I I GC(2-0) STBY I I SDM(1-O) I SWC I TST(9-0) TEST(2-0) Q1-Q192 I A , status of the output drivers. Output Current Magnitude Control GG, RG, GA(2-0), GB(2-0), and GC(2-0 CP Clare
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MXED101TP MXED101DI gc 5.5V 1.0F AN 17823 17823 OLED driver IC I-20066 S-16329 DS-MXED101-R9
Abstract: BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C , 's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one , requiring short circuit withstand capability. SMD-220 Absolute Maximum Ratings Parameter VCES IC @ T , Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short , - Diode Junction-to-Ambient, (PCB Mount)* Junction-to-Ambient, typical socket mount Weight International Rectifier
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IRGBC20MD2-S transistor c372 c372 transistor transistor C369 transistor C368 transistor c367 c368 transistor C-371 C-372
Abstract: PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE , convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a , . SMD-220 Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ , Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time , RJC RJC RJA RJA Wt Min. Junction-to-Case - IGBT Junction-to-Case - Diode International Rectifier
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c371 transistor c369 C369 transistor C-366
Abstract: ­ 4 ­ mA Gain Gc ­ 17 ­ dB Noise Figure F ­ 1.5 ­ dB , amplifier) Iop ­ 4 ­ mA Conversion Gain Gc ­ 9 ­ dB SSB Noise Figure , Conversion Gain (incl. SAW) Gc ­ 22 ­ dB SSB Noise Figure Fssb ­ 2.5 ­ dB , base-collector diode for 0 V collector-emitter bias. In this mode, the current consumption of the LNA is less , mode by forward biasing the base-collector diode for 0 V collector-emitter bias. In this mode, the Infineon Technologies
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SCT-598 BCR22 diode zl 82 diode SMD MARKING CODE SAW diode zl 8.2 smd marking gc EHT08995 EHT08999 GPW09182
Abstract: follows: Outline Letter SMD MAXIM GC TV PA JA Mil-Std-1835 MACY1-X8 GDIP1-T8 or CDIP2-T8 Case Outline 8 , SCOPE: SWITCHED-CAPACITOR VOLTAGE CONVERTER Device Type 01 Generic Number ICL7660AM(x)/883B SMD , . - Electrical Characteristics of ICL7660AMxx/883B for /883B and SMD 5962-3870702 19-0161 Page 2 , the limits in Table 1. NOTE 3: ICL7660 can operate without an external output diode over the full temperature and voltage ranges. It can also be used with the external diode DX when replacing the Intersil Maxim Integrated Products
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5962-3870702
Abstract: SMD Number 5962-3870702 Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter SMD MAXIM GC TV PA JA Mil-Std-1835 MACY1-X8 GDIP1-T8 or , SMD 5962-3870702 19-0161 Page 2 of Rev. D 5 TABLE 1. ELECTRICAL TESTS TEST Symbol , + GND CAPVOUT LV OSC V+ Electrical Characteristics of ICL7660AMxx/883B for /883B and SMD , 3: ICL7660 can operate without an external output diode over the full temperature and voltage ranges Maxim Integrated Products
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ICL7660AMJA ICL7660AMTV/883B TO99 package 5962-3870702MGC
Abstract: Twin Diode Schottky Barrier Diode mtm® OUTLINE Package : STO-220 10.2 DF30JC4 40V 30A Feature · SMD · SMD · Low lR=0.7mA · Resistance for thermal run-away · High lo Rating-Small-RKG Unit-m , to our web site or the diode technical data book. As for the marking, refer to the specification , = 115" C 50Hz sine wave, Resistance load, Per diode lo/2, Tc = 115"C S O H z iE K S , T j = 25 , ü Tc = 25°C) MAX MAX TYP MAX t _ cA if tJ rt. Pulse measurement, Per diode -
OCR Scan
IOA10 smd marking gc diode
Abstract: UNISONIC TECHNOLOGIES CO., LTD BAS70xW DIODE SCHOTTKY BARRIER DIODES  DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-323 small plastic SMD package. Single diode and , -080. B BAS70xW  DIODE DIODE CONFIGURATION AND SYMBOL BAS70W BAS70AW BAS70CW , www.unisonic.com.tw GC G: Halogen Free L: Lead Free GS G: Halogen Free L: Lead Free 2 of 4 QW-R601-080. B BAS70xW  DIODE ABSOLUATE MAXIMUM RATINGS (TA=25°C, unless otherwise specified Unisonic Technologies
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BAS70 BAS70WL-AL3-R BAS70WG-AL3-R BAS70AWL-AL3-R BAS70AWG-AL3-R BAS70CWL-AL3-R
Abstract: UNISO TE NIC CHNO G SCO LTD LO IE ., BAS70x DIODE SCH OT T K Y BARRI ER DI ODES Ì DESCRI PT I ON Planar Schottky barrier diodes encapsulated in the SOT-23 small plastic SMD package , 1 of 3 QW-R601-017,C BAS70x Ì DIODE DI ODE CON FI GU RAT I ON AN D SY M BOL BAS70 , CO., LTD www.unisonic.com.tw GC G: Halogen Free L: Lead Free GS G: Halogen Free L: Lead Free 2 of 4 QW-R601-017,C BAS70x Ì DIODE ABSOLU AT E M AX I M U M RAT I N GS TA Unisonic Technologies
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BAS70L-AE3-R BAS70G-AE3-R BAS70AL-AE3-R BAS70AG-AE3-R BAS70CL-AE3-R BAS70CG-AE3-R
Abstract: UNISONIC TECHNOLOGIES CO., LTD BAS70x DIODE SCHOTTKY BARRIER DIODES 3 DESCRIPTION Planar Schottky barrier diodes encapsulated in the SOT-23 small plastic SMD package. Single diodes and , ) AE3: SOT-23 (3) L: Lead Free Plating Blank: Pb/Sn , 1 of 3 QW-R601-017,A BAS70x DIODE DIODE CONFIGURATION AND SYMBOL BAS70 BAS70A BAS70C BAS70S 3 3 3 3 2 1 n.c 2 1 2 1 2 1 MARKING BAS70 BAS70A BAS70C BAS70S G0 GA GC GS Unisonic Technologies
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BAS70-AE3-R BAS70A-AE3-R BAS70C-AE3-R G0 SOT-23 BAS70S-AE3-R BAS70SL-AE3-R
Abstract: UNISO TE NIC CHNO G SCO LTD LO IE ., BAS70xW DIODE SCH OT T K Y BARRI ER DI ODES  DESCRI PT I ON Planar Schottky barrier diodes encapsulated in the SOT-323 small plastic SMD package. Single diode and dual diodes with different pin configuration are available.  FEAT U RES , Reel 1 of 4 QW-R601-080. B BAS70xW  DIODE DI ODE CON FI GU RAT I ON AN D SY M BOL , UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw GC G: Halogen Free L: Lead Free GS G Unisonic Technologies
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BAS70CWG-AL3-R BAS70SWL-AL3-R BAS70SWG-AL3-R BAS70SW
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