500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
LT1528CQ#PBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1528CT Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: TO-220; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1528CQ#TRPBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1528CQ Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1528CQ#TR Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1528CT#PBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: TO-220; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

Fujitsu GaAs FET application note

Catalog Datasheet MFG & Type PDF Document Tags

fujitsu gaas fet

Abstract: Fujitsu GaAs FET application note FSX56LP General Purpose GaAs FET FEATURES · Low Phase Noise: f = -95 dBc/Hz (Typ.) (10KHz offset) · Small Size Package: LP package for SMT application · Tape and Reel available · High Output Power , is a low phase noise GaAs FET with an N-channel Schottky gate that is designed for oscillator applications in C-X band. Fujitsu's stringent Quality Assurance Program assures the highest reliability and , db dBc/Hz 10KHz offset Edition 1.1 July 1999 1 FSX56LP General Purpose GaAs FET Case
Fujitsu
Original
fujitsu gaas fet Fujitsu GaAs FET application note FSX56 FCSI0598M200

FSX56LP

Abstract: fujitsu gaas fet FSX56LP - General Purpose GaAs FET FEATURES _ â'¢ High Output Power: P1dB = 15dBm (Typ , .) (10KHz offset) â'¢ Small Size Package: LP package for SMT application â'¢ Tape and Reel available DESCRIPTION The FSX56LP is a low phase noise GaAs FET with an N-channel Schottky gate that is designed for oscillator applications in C-X band. Fujitsu's stringent Quality Assurance Program assures the highest , GaAs FET Case Style "LP" Metal-Ceramic Package Gold Plated Leads 1. Gate 2. Source 3. Drain 4
-
OCR Scan
10GHz oscillator 2000Q

FLC301XP

Abstract: FLC301XP equivalent APPLICATION NOTES C. EQUIVALENT CIRCUIT GaAs FET CHIP LUMPED ELEMENT MODEL Note: Equivalent circuit , APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 , \ Figure 111-3. Connection of the Bias Supply to the GaAs FET's _ FUJITSU 335 , GaAs FET and HEMT devices are sensitive to electrostatic discharge (ESD). It is very important that the , ) SHIPPING CONTAINER All GaAs FET and HEMT chips are shipped in a "waffle pack" style shipping container
-
OCR Scan
FLC301XP FLC301XP equivalent FLK052XP ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B

GSC371BAL2000

Abstract: Fujitsu GaAs FET application note FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt , 1930-1990MHz PCS band using the Fujitsu FLL400IP-2 GaAs FET is presented. Full circuit design details as well as the measured results for both Class A and AB operation are provided. FUJITSU APPLICATION NOTE , circuit elements of the 40W amplifier are the Fujitsu FLL400IP-2, 40W power GaAs FET, two SHOSHIN balun , ACP performance are shown, Figures 7a and 7b. FUJITSU APPLICATION NOTE - No 002 Gate Bias
Fujitsu
Original
GSC371BAL2000 GSC371-BAL2000 12v class d amplifier 40W gaas fet vhf uhf GSC371 soshin 1930MH 1930-1990MH

FUJITSU MICROWAVE TRANSISTOR

Abstract: understanding thermal basics for microwave power FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES · Targeted WCDMA ACPR at 6 W average · , MMDS band using the Fujitsu FLL600IQ-3 GaAs FET device is presented. Full circuit design details as , amplifier design is provided without example. FUJITSU APPLICATION NOTE - No 007 FLL600IQ-3 Device , two 30-W Au gate power GaAs FET chips that are independently configured within the Fujitsu IQ
Fujitsu
Original
FUJITSU MICROWAVE TRANSISTOR understanding thermal basics for microwave power fll600iq ATC 100A 4pF high power fet amplifier schematic mmds passband filter

FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL1500IU-2C FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES · Targeted WCDMA ACPR at 20W , =3.48 dielectric material for the 2.112.17 GHz WCDMA band using the Fujitsu FLL1500IU-2C GaAs FET device is , . FUJITSU APPLICATION NOTE - No 008 Circuit Description The circuitry described in this application note , FLL1500IU-2C utilizes two pairs of 40 W Au gate power GaAs FET chips that are mounted within the Fujitsu
Fujitsu
Original
4433B fujitsu power amplifier GHz balun transformer 50ohm stub tuner matching F217 FLL1500

FUJITSU MICROWAVE TRANSISTOR

Abstract: class A push pull power amplifier 150w FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES · Targeted WCDMA ACPR at 20W , 2.11-2.17 GHz WCDMA IMT-2000 band using the Fujitsu FLL1500IU-2C GaAs FET is presented. Full circuit design , can be due to an operator error, an overdrive, a system problem or ESD. FUJITSU APPLICATION NOTE , defined. FUJITSU APPLICATION NOTE - No 004 Drain Bias Circuit RF Microstrip Matching /4 High
Fujitsu
Original
class A push pull power amplifier 150w push pull class AB RF linear 1.3 GHz balun push pull amplifier design push pull class AB RF linear FLL15 Fujitsu GaAs FET Amplifier design

FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL1500IU-2C FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES · Targeted WCDMA ACPR at 20W , Er=3.48 dielectric material for the 2.112.17 GHz WCDMA band using the Fujitsu FLL1500IU-2C GaAs FET , are provided. FUJITSU APPLICATION NOTE - No 009 Circuit Description The circuitry described in , supply a negative and positive gate current. FUJITSU APPLICATION NOTE - No 009 · · · ·
Fujitsu
Original
push pull class AB RF linear L band

FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL600IQ-2C FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 ­ 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application using the FLL600IQ-2C GaAs FET FEATURES · Targeted WCDMA ACPR at 6 W Average , 2.11-2.17 GHz IMT-2000 band using the Fujitsu FLL600IQ-2C GaAs FET is presented. Full circuit design , can be due to an operator error, an overdrive, a system problem or ESD. FUJITSU APPLICATION NOTE , defined. FUJITSU APPLICATION NOTE - No 005 Drain Bias Circuit RF Microstrip Matching /4 High
Fujitsu
Original
60W POWER AMPLIFIER CIRCUIT FLL600IQ-2 RTH08 GAAS FET AMPLIFIER f 10Mhz to 2 GHz

FUJITSU MICROWAVE TRANSISTOR

Abstract: Fujitsu GaAs FET application note FUJITSU APPLICATION NOTE - No 006 80-W, 2.11 ­ 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application Using the FLL800IQ-2C GaAs FET FEATURES · Targeted WCDMA ACPR at 8W Average , 2.11-2.17 GHz IMT-2000 band using the Fujitsu FLL800IQ-2C GaAs FET is presented. Full circuit design , elements of the 80-W amplifier are the Fujitsu FLL800IQ-2C, 80-W power push-pull GaAs FET, two 50 , FUJITSU APPLICATION NOTE - No 006 · · · for the devices can be due to an operator error, an
Fujitsu
Original

Fujitsu GaAs FET application note

Abstract: 0-180-degree GaAs FET device FLL1500IU-2C(1), a Fujitsu 150 W internally partially matched device. Both balanced , APPLICATION NOTE NUMBER 014 THE POSSIBILITIES ARE INFINITE Reprint of Technical Paper Presented at Wireless Symposium 2001 High Power GaAs FET Amplifiers: Push-Pull versus Balanced , San Jose, California High-Power GaAs FET Amplifiers: Push-Pull versus Balanced Configurations , microwave GaAs FET devices(2) up to L- and S-band and soon up to C-band consist of two independent sides
Fujitsu
Original
0-180-degree Fujitsu GaAs FET Amplifier uhf microwave fet amplifier advantages and disadvantages symposium

High Power GaAs FET

Abstract: Fujitsu GaAs FET application note Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for general purpose application , FLC317MG-4 High Voltage - High Power GaAs FET FEATURES High Output Power: P1dB=34.8dBm(Typ , dBm dB % o C/W CASE STYLE: MG FLC317MG-4 High Voltage - High Power GaAs FET 2 FLC317MG-4 High Voltage - High Power GaAs FET 3 FLC317MG-4 High Voltage - High Power GaAs FET , 4 FLC317MG-4 High Voltage - High Power GaAs FET For further information please contact
Eudyna Devices
Original
High Power GaAs FET C-111A RM1101 EIAJ ED-4701 111A RM-1101 FLC31

Fujitsu GaAs FET application note

Abstract: FLL810 APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS , . See application note "HighPower GaAs FET Device Bias Considerations" number 010 for more details , applications using a GaAs FET quasi E-mode push-pull Fujitsu device was designed. It is a compact balanced , 2.5-2.7 GHz band with good linearity and efficiency. Fujitsu has developed a new "Push-Pull" GaAs FET , shows the drain biasing circuit. For more details see Fujitsu application note number 010. Input
Fujitsu
Original
FLL810IQ-3C FLL810 atc100a Hp 2564 FET AMPLIFIER f 10Mhz to 2 GHz push-pull RFP 1026 resistor

fujitsu 42 pds

Abstract: FJS-DS-158 Quality Assurance Standard Fujitsu's GaAs Field Effect Transistors (FETs) and High Electron Mobility , LIGHTWAVE COMPONENTS & MODULES 5. QUALITY ASSURANCE PROGRAM FOR MICROWAVE GaAs FET AND HEMT CHIPS ' , . Group A Tests for GaAs FET and HEMT Chips S u b g ro u p E xa m in a tio n o r Test S ym b ol , vP 9m 3413 3401 3403 Table 5-2. Lot Qualification and Inspection for GaAs FET and HEMT Chips , Program s LIGHTWAVE COMPONENTS & MODULES Table 5-3. Group B Tests for GaAs FET and HEMT Chips
-
OCR Scan
fujitsu 42 pds FJS-DS-158 MIL-STD-750 MIL-STD-883 FJS-DS-055 FJS-DS-057

Fujitsu GaAs FET application note

Abstract: FLL1500IU-2C APPLICATION NOTE NUMBER 010 High-Power GaAs FET Device Bias Considerations The purpose of this application note is to give some general basic guidelines to bias high-power GaAs FET devices , GaAs FET devices in RF and how to match them, little effort is spent for the bias techniques , low loss and ability to handle high power. To simplify this application note only the output circuit , application note only bias circuits that do not use the virtual ground of the P-P configuration will be
Fujitsu
Original
TC701 fujitsu GHz gaas fet RG capacitor MTT-28

siliconix vmp4

Abstract: irf540 27.12 MHz combine 4 modules MRF873 BJT 500 MHz 0.55 W Siemens CLY5 GaAs MESFET 840 MHz 1.24 W GaAs MESFET 850 MHz 1.6 W GaAs MMIC 1 GHz 0.94 W Siemens CLY5 GaAs MESFET 2.45 GHz 1.27 W Fujitsu FLC30 GaAs , conceptual "target" waveforms in Fig 1; Fig 3 shows the actual waveforms in that circuit. Note that those , (see Note 2). In a nominal-waveforms circuit operating with the usual choice of D = 50%, the minimum , , L2 is determined by the designer's choice (Note 2) for QL, and the value of R from Eq 5 or 5A: Q R
-
Original
siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 99CH36282C KE67VWU

Kathrein gsm ANTENNA

Abstract: Kathrein Antennas datasheet low power efficiency, while more costly GaAs FET power amplifiers have better performance , discrete component and hybrid module solutions and which the Company believes perform as well as GaAs FET , ANADIGICS, Inc. is a leading provider of creative, high quality gallium arsenide ("GaAs") integrated , , Director, Human Resources financial performance Net Sales (by application) 1994 1995 1996 , , coupled with increased industry awareness of the benefits of gallium arsenide ("GaAs") integrated circuits
Anadigics
Original
Kathrein gsm ANTENNA Kathrein Antennas datasheet Ericsson microwave dish sharp Universal lnb Ericsson microwave antenna 0.3 to 0.6 difference Kathrein Antennas

Ericsson 600 rt dish

Abstract: qualcomm 801 relatively inexpensive to manufacture but have low power efficiency, while GaAs FET power amplifiers have , the Company believes perform as well as GaAs FET discrete solutions. RECEIVERS. ANADIGICS has , Dataquest "Hot Product" award. We were the first company to manufacture GaAs IC dualband power amplifiers , digital set-top boxes. Our recently introduced GaAs tuner integrated circuits offer bandwidth up to 860 , increase in competition from other GaAs suppliers. Additional information entering the marketplace since
Anadigics
Original
Ericsson 600 rt dish qualcomm 801 c-band microwave transmitter telephone drop-wire philips pe 2480 Ericsson microwave commissioning

transistor cross reference

Abstract: MPT3N40 'S (PURCH) TEK-MADE IC's IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC 1C APPLICATION NOTES HEAT SINKS INSULATORS · . . · 0 · · TRANSISTORS POWER SMALL SIGNAL ARRAYS TRANSISTORS FET TRANSISTORS SCR , (COLORED PGS) DRAWINGS APPLICATION NOTES DIODES BACK&FOURLAYER TUNNEL. SNAP-OFF VVC. ARRAYS DIODES ZENER , APPLICATION NOTES P U B L IS H E D B Y P A R T S C A TA L O G IN G GRO UP ( 7 8 - 5 6 7 ext 2 5 9 1 D R , TEKNET. Internal - Use Requisition Review Log Sheet and process 1t like a part order. (NOTE: Manuals
-
OCR Scan
transistor cross reference MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N

SIEMENS MICROWAVE RADIO

Abstract: mesfet lnb based upon the end application of the product in which its integrated circuits are used (See Note 7 , application areas in which we experienced strong growth in 1998. L S H TRTHE L D E R S E A E OR TO , generated by our three application areas offers 001010101 ANADIGICS another source of strength going , executive positions with industry leaders Fujitsu, National Semiconductor and Intel. 101001010 Bruce , 0101010101 high performance GaAs technology and analog RF design to the future of global communications
Anadigics
Original
SIEMENS MICROWAVE RADIO mesfet lnb raytheon downconverter fujitsu mmic ic Germanium Transistor 10 gb laser diode
Showing first 20 results.