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STELLARIS-3P-MICDI-GOFAST-PGRT Texas Instruments GoFast
PTH08T240FAST Texas Instruments 1-OUTPUT DC-DC REG PWR SUPPLY MODULE
PTH04T240FAST Texas Instruments 10A, 2.2V to 5.5V Input, Power Module for 3-GHz DSP Systems 11-Surface Mount Module -40 to 85

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Fast Recovery Bridge Rectifier, 35A, 600V

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Turboswitch A 600V /1200V very fast, soft recovery DC/DC Converter Module 1-175W Multiple Output RS232 - , DDP6V8 / BZYxx Input rect. Bridge - 1000V / 35A; 600V/35A Input Rect. Bridge - ; 1200V, 30A (3 , recovery current Turboswitch Series - very fast, soft recovery Current Mode PWM Controller Enhanced PWM , Si-Area, Low Cgs, high dV/dt Demagnetisation Diode / Snubber Diode Turboswitch 600V /1200V very fast , =0.31V) FRED - fast Diode, soft recovery Ultra-fast Power Rectifier Cont. Mode Step Down 2-10A upto 40V STMicroelectronics
Original
smps with uc3842 and tl431 mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step up 5a BF3510TV BHA/K3012TV 600CW AVS08 L6560/A
Abstract: , 18KV, 20KV, 22KV, 24KV FAST RECOVERY RECTIFIERS SFR101 - SFR107 {1A, 50V-1000V) SFR151 - SFR157 (1.5A, 50V-1000V) SFR301 - SFR307 (3A, 50V-1000V) SFR601 - SFR601 (6A, 50V-1000V) FAST RECOVERY BRIDGE RECTIFIERS 1.5A, 2A, 3Ã' (50V-400V, 150ns) 4A, 6A, 8A (600V, 250ns) 10A (800V-1000V, 500ns) FAST RECOVERY GLASS , 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V) BRIDGE RECTIFIERS 1A, 1.5A, 2A, 3A, 4A, 5A, 6A, 8A , BRIDGE RECTIFIERS 1A, 1.5A, 2A, 3A, 4A, 6A 8A, 10A, 15A, 25A, 35A HIGH EFFICIENCY RECTIFIERS SHER101 - -
OCR Scan
IC 7805 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor 1N4001 1N4007 1N5391 1N5399 1N5400 1N1001G
Abstract: POWER, PFC 600V Ultra Fast Diode Product Name Status Description Features Package , -220AB TH / Radial TO-220AB page 27 Switch Mode Power Supply : SERVER POWER, PFC 600V Ultra Fast , Rectifiers â'¢ TVS â'¢ Bridge Rectifiers â'¢ Zener Diodes â'¢ Switching Diodes â'¢ X/Y Capacitors â , efficiently under a light current load. Ultra-fast recovery time of the rectifier and low Qg of the switching , and Y-capacitor design, respectively. Regarding input rectifier devices, single-phase bridge Vishay Intertechnology
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bridge rectifier 24V AC to 24v dc DO-201AD BYV26EGP DO-204AC DO-15 DO-204AL DO-41
Abstract: APT35DL120HJ ISOTOP®Fast Diode Full Bridge Power Module VRRM = 1200V IF = 35A @ Tc = 80 , speed rectifiers Features · · · · · · · · + ~ ~ Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray , Characteristics Symbol Characteristic Test Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 35A VR = 600V di/dt = 1500A/us Err Reverse Recovery Energy Min Tj = 25 Microsemi
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APT0502 mj 1504
Abstract: APT35DL120HJ ISOTOP®Fast Diode Full Bridge Power Module VRRM = 1200V IF = 35A @ Tc = 80 , Recovery Time Qrr Reverse Recovery Charge IF = 35A VR = 600V di/dt = 1500A/Âus Err Reverse Recovery Energy Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ , High speed rectifiers Features â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ + ~ ~ Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Microsemi
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Abstract: Features/Benefits Voltage Rating per leg: 600V / 1200V Type of Rectifier: Standard / Fast Current , : 600V, 200A High Power 3 Phase Bridge · Module Operating Temperature Range: -55°C to +125°C · , 533 585 590 578 609 Power Rectifier- Fast Recovery Zener Power Rectifier- Fast Recovery Power Rectifier- Fast Recovery Power Rectifier-General Purpose Power Rectifier-General Purpose Power Rectifier- Fast Recovery Schottky Power Rectifier- Ultrafast Recovery Schottky Transient Voltage Sensitron Semiconductor
Original
3 phase bridge rectifier 400HZ MTBF fit IGBT 1200 H BRIDGE inverters using igbt in matlab 440V ac to 390V dc converter circuit SEN-5282-2 full wave bridge rectifier 25A 50V 400VDC AS9100 MIL-PRF-19500 MIL-PRF-38534
Abstract: Application: AC motor drives with Input Rectifier Bridge D11 - D16 Symbol Conditions Maximum , module required for the whole drive Fast rectifier diodes for enhanced EMC behaviour NPT IGBT , Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry standard package with , 1 MHz VCE = 600V; VGE = 15 V; IC = 35 A RthJC 1.1 mA mA 200 (per IGBT , VCE = 25 V; VGE = 0 V; f = 1 MH z VCE = 600V; VGE = 15 V; IC = 20 A 1000 70 pF nC RthJC IXYS
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3512 bridge rectifier VF 3 phase converter IGBT diode bridge 3512 bridge rectifier 3512 Bridge Rectifier, 35A, 600V diode T 3512 MUBW3512A7
Abstract: Application: AC motor drives with Input Rectifier Bridge D11 - D16 q Conditions Maximum Ratings , one power semiconductor module required for the whole drive Fast rectifier diodes for enhanced EMC , circuit ruggedness Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry , = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 35 A RthJC 1.1 mA mA 200 (per IGBT , VCE = 25 V; VGE = 0 V; f = 1 MH z VCE = 600V; VGE = 15 V; IC = 20 A 1000 70 pF nC RthJC IXYS
Original
Abstract: with Input Rectifier Bridge D11 - D16 Symbol VRRM IFAV IDAVM IFSM Ptot TC = 80°C; sine 180° TC = 80°C; rectangular; d = 1/3; bridge TVJ = 25°C; t = 10 ms; sine 50 Hz TC = 25°C Conditions Maximum Ratings 1600 30 80 , temperature coefficient - fast switching - short tail current · Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery · Industry standard package with insulated copper base plate and soldering , Thermal Response VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 35 A (per IGBT) D11 - IXYS
Original
ds 35-12 e MUBW3512E7
Abstract: Application: AC motor drives with Input Rectifier Bridge D11 - D16 G Symbol Conditions Maximum , semiconductor module required for the whole drive Fast rectifier diodes for enhanced EMC behaviour NPT IGBT , Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry standard package with , "¦ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 35 A RthJC 1.1 mA , 25 V; VGE = 0 V; f = 1 MH z VCE = 600V; VGE = 15 V; IC = 20 A 1000 70 pF nC RthJC 0.7 IXYS
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Abstract: APT35DL120HJ ISOTOP® Fast Diode Full Bridge Power Module VRRM = 1200V IF = 35A @ Tc = 80 , fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage , Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy IF = 35A VR = 600V di/dt = 1500A/Âus Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj , Collector Current 70 5 60 VCE = 600V VGE = -15V TJ = 125°C 4 TJ=125°C 40 Err (mJ Microsemi
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Abstract: Lowest Available Vf High Frequency Applications Soft Recovery Characteristics ULTRAFAST & FAST Fast , : MZ200 to 1200 25A: 1 phase: MT200 to 800 1 phase fast recovery: MY100X to 400X ER 4A: 1 phase , 10A: 1 phase fast recovery: VJ248XM to 648XM EH 12A: 1 1 16A: 3 3 phase: phase: phase , Standard Recovery Fast Recovery Press Fit 23A: 0230200L to 0600L Consult Factory 40A: 40C20B , (TO83) 21 Silicon Controlled Rectifiers Standard Recovery Fast Recovery TO209AC (TO94 Microsemi
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50A 1200V SCR do213ab scr 8a 200v SCR 30A 100V 5A 200V SCR die US60A
Abstract: Application: AC motor drives with q Input Rectifier Bridge D11 - D16 Symbol VRRM IFAV IDAVM IFSM Ptot TC = , High level of integration - only one power semiconductor module required for the whole drive Fast , reverse recovery Industry standard package with insulated copper base plate and soldering pins for PCB , /K; Rth1 = 0.419 K/W Cth2 = 1.25 J/K; Rth2 = 0.131 K/W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V , 125°C VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 82 VCE = 25 V; VGE = 0 V; f = 1 MH z VCE = 600V IXYS
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JR802 mubw35-12a7
Abstract: low VCE(sat) â'¢ SONICâ"¢ diode - fast and soft reverse recovery - low operating forward , reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy , mA mA Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = tbd A/Âus IF = 10 A; VGE = 0 V tbd , MIXA40WB1200TED Input Rectifier Bridge D11 - D16 TVJ = 25°C Ratings typ. max. 1600 Unit V sine IXYS
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IDAVM25
Abstract: of the XPT IGBT with the recently introduced IXYS SONIC diode delivers fast and soft switching , IXYS line of modules, in bridge configuration for higher power applications. XPT Technology ­ Going , . The challenge of processing wafers with thicknesses down to 70um (e.g. 600V XPT IGBT in Figure 1) is , a low on-state voltage with excellent temperature behaviour. The Sonic diode has soft recovery , turn-on characteristic>> Sonic diodes combine a low reverse recovery current along with a short reverse -
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IXAN0070 IGBT inverter calculation 3 phase IGBT inverter design inverter circuit using IGBT module design drive circuit of IGBT igbt igbt sixpack IXA35IF1200HB
Abstract: delivers fast and soft switching behavior. The XPT IGBT has been optimized for motor drives, UPS, solar , IGBTs will also be integrated in the IXYS line of modules, in bridge configuration for higher power , . 600V XPT IGBT in Figure 1) is merited by a reduction in thermal resistance as well as on-state voltage , recovery characteristics, which allows the XPT IGBT to be turned on at very high di/dt's even at low , reverse recovery current along with a short reverse recovery time, as shown in figure 4 to minimise the IXYS
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IGBT inverter calculation FOR A UPS igbt module testing IGBT JUNCTION TEMPERATURE CALCULATION igbt 600V 100A short circuit IGBT module 3 PHASE igbt uses in rectifier IXA37IF1200HJ
Abstract: U. L. Recognized 10-35 Amp "J®" MB Series Bridges -insulated case. NOTE: Fast recovery version also available. Contact your local IR sales office for information. Description/Features Three groups of Diode Bridge Rectifier Assemblies rated from 10 to 35 Amperes and 50 to 1,200 volts , DIMENSIONS i 20.3 (0.80) 21.6 10.85) ' J-_ 10.60 (0.41) _A KU, ^ FAST-! X" «0.8 (0.31) ON â'" 28.6 , SPECIFICATIONS Tj Operating junction temperature range -40 to 150 -40 to 170 °C VRRM = 50 to 600V -40 to -
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35MB60A 35MB40A 100JB2L 36MB40A 26MB 100JB10L 100JB 250JB
Abstract: coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable , 600V IC 3 VF VGE = 25A A ns IRM VGE 15 trr trr 200 40 10 20 TJ = 125°C VR = 600V IF = 25A IRM 5 100 35-12 0 0 0 20 40 60 80 , Eoff 400 t 4 Eon 300 2 40 VCE = 600V VGE = ±15V RG = 47 TJ = 125°C 200 60 , off energy and switching times versus collector current 5 240 VCE = 600V 50 A IC Fig -
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2C444 Diode 400V 5A transistor 2n1208 SML1004RGN REGULATOR IC LM7815 BD124 2C415 2C425 2C746 2N1131L 2N1132
Abstract: M R E C O V E R Y (n s) FAST RECOVERY BRIDGES T Y P IC A L S U R G E (A) CASE 50 B , 32KV 25 â'" â'" - 300 400 1,000 300 Q Q O See Pg. 6 3-PHASE BRIDGES, FAST RECOVERY , -4 RUS-5 3RUS-2 3RUS-4 RUSH RUST LOW VOLTAGE, FAST RECOVERY DIODES RC 3RW RVB RAB RW B 1A , J J S Not Shown J NIGHT VISION ARRAYS AND DIODES HIGH VOLTAGE. FAST RECOVERY DIODES HX , TVR 30 TVS TVSL R12C FAST RECOVERY HV PACKS RVF RVP RHP 5 to 40 5 to 50 5 to 50 0.5 IXYS
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B3-12 75-12A3 145-12A3 150-12A4 200-12A4 diode b3 MII 75-12 A3 resistor catalog 30-12A6 10-12A6 35-12A5 50-12A5 75-12A5 B3-16
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