NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| FT5766M | Fujitsu | Silicon Darlington Transistor Array |
2 pages, |
Scan | |
| FT5766M | N/A | The Transistor Manual (Japanese) 1993 |
2 pages, |
Scan | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: FUJITSU MICROELECTRONICS 31E D Q 374=57^5 001bb74 t> E3FMI FUJITSU January 1990 Edition 1.1 PRODUCT PROFILE - FT5763M FT5763M, FT5766M Silicon Darlington Transistor Array FT5763M FT5763M, FT5766M ABSOLUTE MAXIMUM RATINGS (Ta = 25'C) Rating Symbol Condition Value Unit Storage Temperature T.fl -55 ~+150 °C Junction Temperature Ti +150 °C Collector to Base Voltage VCBO 150 V Emitter to , WcfMtectrwile«, Inc. 3-21 FUJITSU MICROELECTRONICS 31E D D 374cJ7b2 001bb7S ö QFMI T-43-25 T-43-25 FT5763M FT5763M, FT5766M ... | OCR Scan |
2 pages, |
T-43-25 FT5766M FT5763 FT5763M FT5763M abstract |
| Abstract: FUJITSU MICROELECTRONICS 31E D Q 374=57^5 001bb74 t> E3FMI FUJITSU January 1990 Edition 1.1 PRODUCT PROFILE - FT5763M FT5763M, FT5766M Silicon Darlington Transistor Array FT5763M FT5763M, FT5766M ABSOLUTE MAXIMUM RATINGS (Ta = 25'C) Rating Symbol Condition Value Unit Storage Temperature T.fl -55 ~+150 °C Junction Temperature Ti +150 °C Collector to Base Voltage VCBO 150 V Emitter to Base Voltage Vebo 5 V , 001bb7S ö QFMI T-43-25 T-43-25 FT5763M FT5763M, FT5766M DC CURRENT GAIN SWITCHING TIME 20« 10K 6k 2k 1* 600 i l Vrp 3 ... | OCR Scan |
2 pages, |
FT5763m FT5763M FT5766M FT5763M abstract |
| Abstract: 2 0. 75 0.0015 FÎ5764M 5764M GD 150 100 3 1.7 10 100 2000 15000 5 1.5 1.5 2 1.5 0.003 FT5766M a±® GD , >, Da, Ali FT5764M FT5764M 0. 5* 0. 4* 2.1* (Power SIP-12 SIP-12) , Da, AR FT5766M 0. 6* 0.6* 1.8 ... | OCR Scan |
2 pages, |
FT5764 FT5766M FT5760 FT5753 FT5755ML FT5767M FT5770M FT5757M FT5761M FT5754 FT5755M ft5748m FT5760M FT5764M FT5763M FT5747M FT5748M FT5747M abstract |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |