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FSYC264R Datasheet

Part Manufacturer Description PDF Type
FSYC264R Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original
FSYC264R1 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Original
FSYC264R1 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original
FSYC264R3 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Original
FSYC264R3 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original
FSYC264R3 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original
FSYC264R4 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Original
FSYC264R4 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original
FSYC264R4 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original

FSYC264R

Catalog Datasheet MFG & Type PDF Document Tags

1E14

Abstract: 2E12 /BRAND 10K Commercial 10K TXV FSYC264D3 100K Commercial FSYC264R1 100K TXV FSYC264R3 100K Space SMD2 FSYC264D1 FSYC264R4 ©2001 Fairchild Semiconductor Corporation FSYC264D, FSYC264R Rev. A FSYC264D, FSYC264R Absolute Maximum Ratings TC = 25oC, Unless Otherwise , FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID FSYC264D, FSYC264R 250 250
Fairchild Semiconductor
Original
1E14 2E12 MIL-PRF-19500

VDMOS reliability testing report

Abstract: ed, 10K Commercial FSYC264D1 SEGR Resista 10K TXV FSYC264D3 nt 100K Commercial FSYC264R1 N-Cha 100K TXV FSYC264R3 nnel 100K Space FSYC264R4 Power MOSF ETs, Intersil Corpor ation, Features · 34A , FSYC264D, FSYC264R Data Sheet February 2001 File Number 4548.1 Radiation Hardened, SEGR , Symbol D G S Package SMD2 ©2001 Fairchild Semiconductor Corporation FSYC264D, FSYC264R Rev. A FSYC264D, FSYC264R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Fairchild Semiconductor
Original
VDMOS reliability testing report

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 FSYC264R1 100K TXV FSYC264R3 100K Space SMD2 FSYC264D1 FSYC264R4 ©2001 Fairchild Semiconductor Corporation FSYC264D, FSYC264R Rev. B FSYC264D, FSYC264R Absolute Maximum Ratings TC = , FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The , (1.6mm) from Case, 10s Max) FSYC264D, FSYC264R 250 250 UNITS V V 34 22 102 ±20 A A A , ©2001 Fairchild Semiconductor Corporation RJC - - FSYC264D, FSYC264R Rev. B FSYC264D
Fairchild Semiconductor
Original
Rad Hard in Fairchild for MOSFET
Abstract: LEVEL Commercial TXV Commercial TXV Space PART NUMBER/BRAND FSYC264D1 FSYC264D3 FSYC264R1 FSYC264R3 FSYC264R4 Package SMD2 1 CAUTION: These devices are sensitive to electrostatic discharge; follow , FSYC264D, FSYC264R TM Data Sheet February 2001 File Number 4548.1 Radiation , Intersil Americas Inc. Copyright © Intersil Americas Inc. 2001, All Rights Reserved FSYC264D, FSYC264R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSYC264D, FSYC264R Drain to Source Voltage Intersil
Original
ISO9000
Abstract: FSYC264D1 FSYC264D3 FSYC264R1 FSYC264R3 FSYC264R4 Symbol 9D F orm erly available as typ e TA17668 , FSYC264D, FSYC264R juiy 1998 Features · 34A, 250V, r[js(ON) = 0.080£2 · Total Dose - Meets , FSYC264D, FSYC264R Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified FSYC264D, FSYC264R 250 , , f = 1MHz PF PF PF °C/W R0JC 0.6 2 FSYC264D, FSYC264R Source to Drain Diode , . DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO lAS 3 FSYC264D, FSYC264R Typical -
OCR Scan

la 4548

Abstract: 1E14 Commercial FSYC264D1 10K TXV FSYC264D3 100K Commercial FSYC264R1 100K TXV FSYC264R3 100K Space FSYC264R4 Symbol D G S Formerly available as type TA17668 , FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 , File Number 4548 FSYC264D, FSYC264R Absolute Maximum Ratings TC = 25oC, Unless Otherwise , ) FSYC264D, FSYC264R 250 250 UNITS V V 34 22 102 ±20 A A A V 208 83 1.67 102 34
Intersil
Original
la 4548

POWER VDMOS

Abstract: Commercial TXV Space PART NUMBER/BRAND FSYC264D1 FSYC264D3 FSYC264R1 FSYC264R3 FSYC264R4 Symbol 9 D , FSYC264D, FSYC264R July 1998 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs , , File Number 4548 FSYC264D, FSYC264R Absolute Maximum Ratings T c = 25°c, Unless Otherwise Specified FSYC264D, FSYC264R Drain to Source V o lta g e , 0V, f = 1MHz - 4300 780 230 - R0JC 0.6 2 FSYC264D, FSYC264R Source to Drain Diode
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OCR Scan
POWER VDMOS MIL-S-19500