NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| FSF254D | Intersil Corporation | 18A, 250V, 0.170 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
8 pages, |
Original |  |
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| FSF254D1 | Fairchild Semiconductor | 18A, 250V, 0.170 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
10 pages, |
Original | |
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| FSF254D1 | Intersil Corporation | 18A, 250V, 0.170 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
8 pages, |
Original | |
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| FSF254D3 | Fairchild Semiconductor | Transistor Mosfet N-CH 250V 18A 3TO-254AA |
10 pages, |
Original | |
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| FSF254D3 | Intersil Corporation | 18A, 250V, 0.170 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
8 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: are also available. PART NUMBER/BRAND 10K Commercial FSF254D1 10K TXV FSF254D3 , FSF254D, FSF254R FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June , refer to package specifications. ©2001 Fairchild Semiconductor Corporation FSF254D, FSF254R FSF254R Rev. A FSF254D, FSF254R FSF254R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source , . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) FSF254D ... | Original |
10 pages, |
FSF254R3 FSF254R1 FSF254R FSF254D3 FSF254D1 FSF254D 2E12 1E14 FSF254D abstract |
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| Abstract: S E M I C O N D U C T O R FSF254D, FSF254R FSF254R Radiation Hardened, SEGR Resistant N-Channel Power , ) FSF254D, FSF254R FSF254R 250 250 UNITS V V 18 12 54 ±20 A A A V 125 50 1.00 54 18 54 , 1997 101 File Number 3972.2 FSF254D, FSF254R FSF254R Electrical Specifications TC = 25oC , ISD = 18A MIN - 1.8 V - - 690 ns FSF254D, FSF254R FSF254R Electrical , 2. TYPICAL DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS FSF254D, FSF254R FSF254R ... | Original |
8 pages, |
MIL-S-19500 FSF254R FSF254D 2E12 1E14 fsf254 FSF254D abstract |
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| Abstract: available. PART NUMBER/BRAND 10K Commercial FSF254D1 10K TXV FSF254D3 100K , FSF254D, FSF254R FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June , Corporation 1999 3-113 File Number 3972.3 FSF254D, FSF254R FSF254R Absolute Maximum Ratings TC = 25oC , (1.6mm) from Case, 10s Max) FSF254D, FSF254R FSF254R 250 250 UNITS V V 18 12 54 ±20 A A A V , Qgd 3-114 FSF254D, FSF254R FSF254R Source to Drain Diode Specifications PARAMETER SYMBOL ... | Original |
8 pages, |
FSF254R3 FSF254R1 FSF254R FSF254D3 FSF254D1 FSF254D 2E12 1E14 FSF254D abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| FSF254D, FSF254R FSF254R FSF254R FSF254R Harris Corporation's Home Page ¤ Semiconductor's Home Page ¤ Product Information ¤ FSF254D, FSF254R FSF254R FSF254R FSF254R FSF254D, FSF254R FSF254R FSF254R FSF254R Data Sheets fn3972.pdf Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs (8 pages) FN3972 FN3972 FN3972 FN3972.2 ( Adobe's pdf format - 45883 bytes) Here's where you can find out how to get your free copy of Adobe's acrobat reader . All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 ISO9000 ISO9000 ISO9000 www.datasheetarchive.com/files/harris/data/fn/fn3/fn3972/index.htm |
Harris | 15/08/1997 | 2.4 Kb | HTM | index.htm |
| .2 FSF254D, FSF254R FSF254R FSF254R FSF254R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs (8 pages) FN3972 FN3972 FN3972 FN3972 www.datasheetarchive.com/files/harris/families/rh.htm |
Harris | 15/08/1997 | 74.08 Kb | HTM | rh.htm |
| .2 FSF254D, FSF254R FSF254R FSF254R FSF254R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs (8 pages) FN3972 FN3972 FN3972 FN3972 www.datasheetarchive.com/files/harris/families/pwr.htm |
Harris | 15/08/1997 | 90.49 Kb | HTM | pwr.htm |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| FSF254D4 | Harris Semiconductor | N-Channel Enhancement MOSFET - 10k Rad Hard,Space Screening Level | |