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Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.2985 Price Each : $0.3472
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.2901 Price Each : €0.47
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : 1,390 Best Price : $0.3390 Price Each : $0.79
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 10,080 Best Price : $0.28 Price Each : $0.34
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 3,640 Best Price : £0.2920 Price Each : £0.4820
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 260 Best Price : £0.2920 Price Each : £0.5460
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : Chip1Stop Stock : 3,665 Best Price : $0.3070 Price Each : $0.7020
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : element14 Asia-Pacific Stock : 1,380 Best Price : $0.30 Price Each : $0.9360
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : Farnell element14 Stock : 2,694 Best Price : £0.2630 Price Each : £0.6680
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : New Advantage Stock : 8,897 Best Price : - Price Each : -
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FQU13N06L Datasheet

Part Manufacturer Description PDF Type
FQU13N06L Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original
FQU13N06LTU Fairchild Semiconductor 60V N-Channel Logic level QFET Original
FQU13N06LTU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 11A IPAK Original
FQU13N06LTU_WS Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 11A IPAK Original

FQU13N06L

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FQD13N06L / FQU13N06L N-Channel QFET® MOSFET 60 V, 11 A, 115 mâ"¦ Description This , Drain-Source Voltage - Continuous (TC = 25°C) Drain Current ! " FQD13N06L / FQU13N06L 60 11 - , FQD13N06L / FQU13N06L 4.5 Unit °C/W dv/dt PD TJ, TSTG TL - Pulsed (Note 1) ± 20 , Fairchild Semiconductor Corporation FQD13N06L / FQU13N06L Rev. C1 www.fairchildsemi.com FQD13N06L / FQU13N06L N-Channel QFET® MOSFET July 2013 Symbol TC = 25°C unless otherwise noted Parameter Fairchild Semiconductor
Original

FQD13N06L

Abstract: FQU13N06L FQD13N06L / FQU13N06L April 2000 QFET TM FQD13N06L / FQU13N06L 60V LOGIC N-Channel , Current FQD13N06L / FQU13N06L Drain-Source Voltage - Continuous (TC = 25°C) Drain Current V , temperature ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQD13N06L / FQU13N06L , . Drain Current and Gate Voltage Capacitance [pF] FQD13N06L / FQU13N06L Typical Characteristics , ) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage FQD13N06L / FQU13N06L
Fairchild Semiconductor
Original
Abstract: FQD13N06L / FQU13N06L N-Channel QFET® MOSFET 60 V, 11 A, 115 mâ"¦ Description This , Continuous (TC = 25°C) Drain Current ! " FQD13N06L / FQU13N06L 60 11 - Continuous (TC = 100 , / FQU13N06L 4.5 Unit °C/W dv/dt PD TJ, TSTG TL - Pulsed (Note 1) ± 20 (Note 3 , Fairchild Semiconductor Corporation FQD13N06L / FQU13N06L Rev. C2 www.fairchildsemi.com FQD13N06L / FQU13N06L N-Channel QFET® MOSFET July 2013 Symbol TC = 25°C unless otherwise noted Parameter Fairchild Semiconductor
Original
Abstract: FQD13N06L / FQU13N06L N-Channel MOSFET March 2013 N-Channel QFET MOSFET 60 V, 11 A, 115 m Description FQD13N06L / FQU13N06L This N-Channel enhancement mode power MOSFET is produced using , TC = 25°C unless otherwise noted S FQD13N06L / FQU13N06L 60 11 7 Parameter Drain-Source Voltage , (PCB Mount) ©2000 Fairchild Semiconductor Corporation FQD13N06L / FQU13N06L Rev. C0 www.fairchildsemi.com FQD13N06L / FQU13N06L N-Channel MOSFET Electrical Characteristics Symbol Parameter TC = Fairchild Semiconductor
Original

FQD13N06L

Abstract: FQU13N06L QFET ® FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features , / FQU13N06L January 2009 D ! " G S I-PAK D-PAK FQD Series G D S ! " " " G , Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD13N06L / FQU13N06L 60 , 17 23 FQD13N06L / FQU13N06L Electrical Characteristics pF ns IDSS IGSSF IGSSR , Fairchild Semiconductor Corporation Rev. A2. January 2009 FQD13N06L / FQU13N06L Typical
Fairchild Semiconductor
Original
A2JA
Abstract: FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET , / FQU13N06L 60 11 7 44 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C , . May 2001 FQD13N06L / FQU13N06L Electrical Characteristics Symbol Parameter TC = 25°C unless , Semiconductor Corporation Rev. A1. May 2001 FQD13N06L / FQU13N06L Typical Characteristics 10 1 , . May 2001 FQD13N06L / FQU13N06L Typical Characteristics (Continued) 1.2 2.5 BV DSS Fairchild Semiconductor
Original
FQD13N06LTM FQD13N06LTF
Abstract: QFET ® FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features , FQD13N06L / FQU13N06L January 2009 D #21; #22; G S I-PAK D-PAK FQD Series G D S #21; #22; , / FQU13N06L 60 Units V 11 A - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS , 95 125 pF - 17 23 FQD13N06L / FQU13N06L Electrical Characteristics pF ns , . January 2009 FQD13N06L / FQU13N06L Typical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 Fairchild Semiconductor
Original
Abstract: FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET , / FQU13N06L 60 11 7 44 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C , . May 2001 FQD13N06L / FQU13N06L Electrical Characteristics Symbol Parameter TC = 25°C unless , Semiconductor Corporation Rev. A1. May 2001 FQD13N06L / FQU13N06L Typical Characteristics 10 1 , . May 2001 FQD13N06L / FQU13N06L Typical Characteristics (Continued) 1.2 2.5 BV DSS Fairchild Semiconductor
Original
Abstract: C unless otherwise noted. FQD13N06LTM / FQU13N06LTU FQU13N06LTU_WS Parameter Drain-Source , and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FQU13N06LTU FQU13N06L I-PAK Tube N/A N/A 70 units FQU13N06LTU_WS FQU13N06LS I-PAK Tube N/A N/A , FQU13N06LTU_WS Parameter Thermal Resistance, Junction to Case, Max. 4.5 Thermal Resistance, Junction to , www.fairchildsemi.com FQD13N06L / FQU13N06L â'" N-Channel QFET® MOSFET Mechanical Dimensions FQU13N06LTU Fairchild Semiconductor
Original
Abstract: FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET , / FQU13N06L 60 11 7 44 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C , . May 2001 FQD13N06L / FQU13N06L Electrical Characteristics Symbol Parameter TC = 25°C unless , Semiconductor Corporation Rev. A1. May 2001 FQD13N06L / FQU13N06L Typical Characteristics 10 1 , . May 2001 FQD13N06L / FQU13N06L Typical Characteristics (Continued) 1.2 2.5 BV DSS Fairchild Semiconductor
Original

FQU13N06L

Abstract: FQD13N06L QFET TM FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features , = 25°C) Drain Current FQD13N06L / FQU13N06L 60 Units V 11 A - Continuous (TC = 100 , . May 2001 FQD13N06L / FQU13N06L May 2001 Symbol TC = 25°C unless otherwise noted , FQD13N06L / FQU13N06L Electrical Characteristics FQD13N06L / FQU13N06L Typical Characteristics , / FQU13N06L Typical Characteristics 1.5 1.0 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9
Fairchild Semiconductor
Original
Abstract: FQD13N06 / FQU13N06 March 2013 N-Channel QFET MOSFET 60 V, 11 A, 115 m Description FQD13N06L / FQU13N06L This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®'s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC Fairchild Semiconductor
Original

IRFU210A

Abstract: IRFU230A 0.107 - - 9.4 12 38 FQU13N06L 60 Single 0.11 0.14@5V - - 4.8
Fairchild Semiconductor
Original
FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 IRFU210A IRFU230A IRFU*230A HUF75617D3 SSU1N50A

SSP35n03

Abstract: bc417 FQT7N10L FQU10N20 FQU10N20L FQU13N06L FQU14N15 FQU16N15 FQU17N08 FQU17P06 FQU1N60 FQU1P50 FQU20N06
-
Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

FDC6331

Abstract: fdp047an HUFA7510S3S HUFA75307D3 STP24NF10 Fairchild FQU13N06 FQU13N06L FQU17P06 FQU1N60 FQU1N60C FQU1N80
Fairchild Semiconductor
Original
SFP9614 FDC6331 fdp047an FDB045AN fdd5614p FQA70N15 FQPF10N20 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84

IRF1830G

Abstract: IRF1830 FQU20N06 60 HUF76409D3 60 HUFA76409D3 60 HUF76407D3 60 HUFA76407D3 60 FQU13N06L 60 FQU13N06 60
STMicroelectronics
Original
IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AO4405 AO4407 AO4408 AO4409 AO4410 AO4411

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 Single 0.092 0.107 ­ ­ 9.4 12 38 FQU13N06L 60 Single 0.11 0.14@5V
Fairchild Semiconductor
Original
FLMP SuperSOT-6 Complementary MOSFETs buz11 FDG6316 FQD7P20 IRF650 FQA90N08 SC70-6 SC75-6 247TM

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model FQU20N06 60 HUF76407D3 60 HUFA76407D3 60 FQU13N06L 60 FQU13N06 60 FDU3580 80 FQU24N08 80
Fairchild Semiconductor
Original
FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model LM3171 spice model bf199 bc547 spice model TN3440A TN4033A TN5415A TN6705A TN6707A TN6714A
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