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Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.2457 Price Each : $0.2862
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.2654 Price Each : €0.43
Part : FQU13N06LTU_WS Supplier : Fairchild Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.2117 Price Each : $0.2463
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : Newark element14 Stock : 4,175 Best Price : $0.4680 Price Each : $0.8520
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 17,414 Best Price : $0.47 Price Each : $0.58
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : RS Components Stock : 300 Best Price : £0.20 Price Each : £0.2220
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : Chip1Stop Stock : 4,969 Best Price : $0.5511 Price Each : $0.8249
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : element14 Asia-Pacific Stock : 4,175 Best Price : $0.29 Price Each : $0.92
Part : FQU13N06LTU Supplier : Fairchild Semiconductor Manufacturer : Farnell element14 Stock : 4,960 Best Price : £0.2160 Price Each : £0.2420
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FQU13N06L Datasheet

Part Manufacturer Description PDF Type
FQU13N06L Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original
FQU13N06LTU Fairchild Semiconductor 60V N-Channel Logic level QFET Original
FQU13N06LTU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 11A IPAK Original
FQU13N06LTU_WS Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 11A IPAK Original

FQU13N06L

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FQD13N06L / FQU13N06L N-Channel QFET® MOSFET 60 V, 11 A, 115 mâ"¦ Description This , Drain-Source Voltage - Continuous (TC = 25°C) Drain Current ! " FQD13N06L / FQU13N06L 60 11 - , FQD13N06L / FQU13N06L 4.5 Unit °C/W dv/dt PD TJ, TSTG TL - Pulsed (Note 1) ± 20 , Fairchild Semiconductor Corporation FQD13N06L / FQU13N06L Rev. C1 www.fairchildsemi.com FQD13N06L / FQU13N06L N-Channel QFET® MOSFET July 2013 Symbol TC = 25°C unless otherwise noted Parameter Fairchild Semiconductor
Original
Abstract: FQD13N06L / FQU13N06L April 2000 QFET TM FQD13N06L / FQU13N06L 60V LOGIC N-Channel , Current FQD13N06L / FQU13N06L Drain-Source Voltage - Continuous (TC = 25°C) Drain Current V , temperature ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQD13N06L / FQU13N06L , . Drain Current and Gate Voltage Capacitance [pF] FQD13N06L / FQU13N06L Typical Characteristics , ) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage FQD13N06L / FQU13N06L Fairchild Semiconductor
Original
Abstract: FQD13N06L / FQU13N06L N-Channel QFET® MOSFET 60 V, 11 A, 115 mâ"¦ Description This , Continuous (TC = 25°C) Drain Current ! " FQD13N06L / FQU13N06L 60 11 - Continuous (TC = 100 , / FQU13N06L 4.5 Unit °C/W dv/dt PD TJ, TSTG TL - Pulsed (Note 1) ± 20 (Note 3 , Fairchild Semiconductor Corporation FQD13N06L / FQU13N06L Rev. C2 www.fairchildsemi.com FQD13N06L / FQU13N06L N-Channel QFET® MOSFET July 2013 Symbol TC = 25°C unless otherwise noted Parameter Fairchild Semiconductor
Original
Abstract: FQD13N06L / FQU13N06L N-Channel MOSFET March 2013 N-Channel QFET MOSFET 60 V, 11 A, 115 m Description FQD13N06L / FQU13N06L This N-Channel enhancement mode power MOSFET is produced using , TC = 25°C unless otherwise noted S FQD13N06L / FQU13N06L 60 11 7 Parameter Drain-Source Voltage , (PCB Mount) ©2000 Fairchild Semiconductor Corporation FQD13N06L / FQU13N06L Rev. C0 www.fairchildsemi.com FQD13N06L / FQU13N06L N-Channel MOSFET Electrical Characteristics Symbol Parameter TC = Fairchild Semiconductor
Original
Abstract: QFET ® FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features , / FQU13N06L January 2009 D ! " G S I-PAK D-PAK FQD Series G D S ! " " " G , Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD13N06L / FQU13N06L 60 , 17 23 FQD13N06L / FQU13N06L Electrical Characteristics pF ns IDSS IGSSF IGSSR , Fairchild Semiconductor Corporation Rev. A2. January 2009 FQD13N06L / FQU13N06L Typical Fairchild Semiconductor
Original
A2JA
Abstract: QFET ® FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features , FQD13N06L / FQU13N06L January 2009 D #21; #22; G S I-PAK D-PAK FQD Series G D S #21; #22; , / FQU13N06L 60 Units V 11 A - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS , 95 125 pF - 17 23 FQD13N06L / FQU13N06L Electrical Characteristics pF ns , . January 2009 FQD13N06L / FQU13N06L Typical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 Fairchild Semiconductor
Original
Abstract: FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET , / FQU13N06L 60 11 7 44 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C , . May 2001 FQD13N06L / FQU13N06L Electrical Characteristics Symbol Parameter TC = 25°C unless , Semiconductor Corporation Rev. A1. May 2001 FQD13N06L / FQU13N06L Typical Characteristics 10 1 , . May 2001 FQD13N06L / FQU13N06L Typical Characteristics (Continued) 1.2 2.5 BV DSS Fairchild Semiconductor
Original
FQD13N06LTM FQD13N06LTF
Abstract: FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET , / FQU13N06L 60 11 7 44 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C , . May 2001 FQD13N06L / FQU13N06L Electrical Characteristics Symbol Parameter TC = 25°C unless , Semiconductor Corporation Rev. A1. May 2001 FQD13N06L / FQU13N06L Typical Characteristics 10 1 , . May 2001 FQD13N06L / FQU13N06L Typical Characteristics (Continued) 1.2 2.5 BV DSS Fairchild Semiconductor
Original
Abstract: C unless otherwise noted. FQD13N06LTM / FQU13N06LTU FQU13N06LTU_WS Parameter Drain-Source , and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FQU13N06LTU FQU13N06L I-PAK Tube N/A N/A 70 units FQU13N06LTU_WS FQU13N06LS I-PAK Tube N/A N/A , FQU13N06LTU_WS Parameter Thermal Resistance, Junction to Case, Max. 4.5 Thermal Resistance, Junction to , www.fairchildsemi.com FQD13N06L / FQU13N06L â'" N-Channel QFET® MOSFET Mechanical Dimensions FQU13N06LTU Fairchild Semiconductor
Original
Abstract: FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET , / FQU13N06L 60 11 7 44 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C , . May 2001 FQD13N06L / FQU13N06L Electrical Characteristics Symbol Parameter TC = 25°C unless , Semiconductor Corporation Rev. A1. May 2001 FQD13N06L / FQU13N06L Typical Characteristics 10 1 , . May 2001 FQD13N06L / FQU13N06L Typical Characteristics (Continued) 1.2 2.5 BV DSS Fairchild Semiconductor
Original
Abstract: QFET TM FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description Features , = 25°C) Drain Current FQD13N06L / FQU13N06L 60 Units V 11 A - Continuous (TC = 100 , . May 2001 FQD13N06L / FQU13N06L May 2001 Symbol TC = 25°C unless otherwise noted , FQD13N06L / FQU13N06L Electrical Characteristics FQD13N06L / FQU13N06L Typical Characteristics , / FQU13N06L Typical Characteristics 1.5 1.0 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 Fairchild Semiconductor
Original
Abstract: FQD13N06 / FQU13N06 March 2013 N-Channel QFET MOSFET 60 V, 11 A, 115 m Description FQD13N06L / FQU13N06L This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®'s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC Fairchild Semiconductor
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Abstract: 0.107 - - 9.4 12 38 FQU13N06L 60 Single 0.11 0.14@5V - - 4.8 Fairchild Semiconductor
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FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 IRFU210A IRFU230A
Abstract: FQT7N10L FQU10N20 FQU10N20L FQU13N06L FQU14N15 FQU16N15 FQU17N08 FQU17P06 FQU1N60 FQU1P50 FQU20N06 -
Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA
Abstract: HUFA7510S3S HUFA75307D3 STP24NF10 Fairchild FQU13N06 FQU13N06L FQU17P06 FQU1N60 FQU1N60C FQU1N80 Fairchild Semiconductor
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FDC6331 fdp047an FDB045AN FQPF10N20 FQPF*13N06L FQA70N15 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84
Abstract: FQU20N06 60 HUF76409D3 60 HUFA76409D3 60 HUF76407D3 60 HUFA76407D3 60 FQU13N06L 60 FQU13N06 60 STMicroelectronics
Original
IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AO4405 AO4407 AO4408 AO4409 AO4410 AO4411
Abstract: Single 0.092 0.107 ­ ­ 9.4 12 38 FQU13N06L 60 Single 0.11 0.14@5V Fairchild Semiconductor
Original
FLMP SuperSOT-6 Complementary MOSFETs buz11 FDG6316 FQD7P20 IRF650 IRFS540 SC70-6 SC75-6 247TM
Abstract: FQU20N06 60 HUF76407D3 60 HUFA76407D3 60 FQU13N06L 60 FQU13N06 60 FDU3580 80 FQU24N08 80 Fairchild Semiconductor
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FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model LM3171 bc547 spice model spice model bf199 TN3440A TN4033A TN5415A TN6705A TN6707A TN6714A
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