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Part : FQI50N06TU Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.5539 Price Each : $0.5859
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Part : FQI5P10TU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 3,000 Best Price : $0.51 Price Each : $0.51
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FQI55N06 Datasheet

Part Manufacturer Description PDF Type
FQI55N06 Fairchild Semiconductor 60 V N-Channel MOSFET Original

FQI55N06

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FQB55N06 / FQI55N06 May 2001 QFET FQB55N06 / FQI55N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB55N06 / FQI55N06 60 55 , . May 2001 FQB55N06 / FQI55N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , Corporation Rev. A1. May 2001 FQB55N06 / FQI55N06 Typical Characteristics 10 2 ID, Drain , Corporation Rev. A1. May 2001 FQB55N06 / FQI55N06 Typical Characteristics (Continued) 1.2 Fairchild Semiconductor
Original
FQI55N06TU
Abstract: FQB55N06 / FQI55N06 May 2001 QFET FQB55N06 / FQI55N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB55N06 / FQI55N06 60 55 , . May 2001 FQB55N06 / FQI55N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , Corporation Rev. A1. May 2001 FQB55N06 / FQI55N06 Typical Characteristics 10 2 ID, Drain , Corporation Rev. A1. May 2001 FQB55N06 / FQI55N06 Typical Characteristics (Continued) 1.2 Fairchild Semiconductor
Original
FQB55N06TM

FQI55N06

Abstract: FQB55N06 QFET TM FQB55N06 / FQI55N06 60V N-Channel MOSFET General Description Features These , Current FQB55N06 / FQI55N06 60 Units V 55 A - Continuous (TC = 100°C) IDM Drain , FQB55N06 / FQI55N06 May 2001 Symbol TC = 25°C unless otherwise noted Parameter Test , Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB55N06 / FQI55N06 Electrical Characteristics FQB55N06 / FQI55N06 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V
Fairchild Semiconductor
Original

FQB55N06

Abstract: FQI55N06 FQB55N06 / FQI55N06 April 2000 QFET TM FQB55N06 / FQI55N06 60V N-Channel MOSFET , / FQI55N06 - Pulsed A 38.9 A 220 (Note 1) A ±25 V Single Pulsed Avalanche , International Rev. A, April 2000 FQB55N06 / FQI55N06 Electrical CharacteristicsT VGS 15.0 V 10.0 , . Drain Current and Gate Voltage Capacitance [pF] FQB55N06 / FQI55N06 Typical Characteristics , 6. Gate Charge Characteristics Rev. A, April 2000 FQB55N06 / FQI55N06 Typical
Fairchild Semiconductor
Original

IRFI520A

Abstract: FQI13N06 FQI65N06 60 Single 0.016 - - - 48 65 150 FQI55N06 60 Single 0.02
Fairchild Semiconductor
Original
ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI50N06 FQI30N06 IRFI520A FQI13N06 FQI20N06