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Part : FQI32N12V2TU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 592 Best Price : $0.63 Price Each : $0.63
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FQI30N06 Datasheet

Part Manufacturer Description PDF Type
FQI30N06 Fairchild Semiconductor 60 V N-Channel MOSFET Original
FQI30N06L Fairchild Semiconductor 60V LOGIC N-Channel MOSFET Original

FQI30N06

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: /pricing/packaging Product Folder - Fairchild P/N FQI30N06 - 60V N-Channel QFET Product FQI30N06TU , FQB30N06 / FQI30N06 May 2001 QFET FQB30N06 / FQI30N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB30N06 / FQI30N06 60 30 , . May 2001 FQB30N06 / FQI30N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , 2001 FQB30N06 / FQI30N06 Typical Characteristics 10 2 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 Fairchild Semiconductor
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fqb30n06

Abstract: FQI30N06 FQB30N06 / FQI30N06 April 2000 QFET TM FQB30N06 / FQI30N06 60V N-Channel MOSFET , 25°C unless otherwise noted Parameter ID IDM Drain Current FQB30N06 / FQI30N06 - , Fairchild Semiconductor International Rev. A, April 2000 FQB30N06 / FQI30N06 Electrical , . On-Resistance Variation vs. Drain Current and Gate Voltage Capacitance [pF] FQB30N06 / FQI30N06 , . Gate Charge Characteristics Rev. A, April 2000 FQB30N06 / FQI30N06 Typical Characteristics
Fairchild Semiconductor
Original
Abstract: FQB30N06 / FQI30N06 May 2001 QFET FQB30N06 / FQI30N06 60V N-Channel MOSFET General , °C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB30N06 / FQI30N06 60 30 , . May 2001 FQB30N06 / FQI30N06 Electrical Characteristics Symbol Parameter TC = 25°C unless , 2001 FQB30N06 / FQI30N06 Typical Characteristics 10 2 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 , Characteristics ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB30N06 / FQI30N06 Fairchild Semiconductor
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FQB30N06TM

FQB30N06

Abstract: FQI30N06 QFET TM FQB30N06 / FQI30N06 60V N-Channel MOSFET General Description Features These , °C) Drain Current FQB30N06 / FQI30N06 60 Units V 30 A - Continuous (TC = 100°C) IDM , . A1. May 2001 FQB30N06 / FQI30N06 May 2001 Symbol TC = 25°C unless otherwise noted , Semiconductor Corporation Rev. A1. May 2001 FQB30N06 / FQI30N06 Electrical Characteristics FQB30N06 / FQI30N06 Typical Characteristics 10 Top : ID, Drain Current [A] ID, Drain Current [A] 2
Fairchild Semiconductor
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IRFI520A

Abstract: FQI13N06 120 FQI30N06 60 Single 0.04 - - - 19 30 79 RF1S25N06 60 Single , Single 0.021 0.025@5V - - 24.5 52 121 FQI30N06L 60 Single 0.035
Fairchild Semiconductor
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ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 IRFI520A FQI13N06 FQI20N06 FQI50N06

SSP35n03

Abstract: bc417 FQB30N06L / FQI30N06L N-Channel MOSFET March 2013 N-Channel QFET MOSFET 60 V, 32 A, 35 m Description FQB30N06L / FQI30N06L This N-Channel enhancement mode power MOSFET is produced using , ) FQB30N06L / FQI30N06L 60 32 22.6 128 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V mJ A mJ V , Semiconductor Corporation FQB30N06L / FQI30N06L Rev.C0 www.fairchildsemi.com FQB30N06L / FQI30N06L , / FQI30N06L Rev.C0 www.fairchildsemi.com FQB30N06L / FQI30N06L N-Channel MOSFET Typical
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SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

SSP6N60A

Abstract: IRF650 FQB30N06L / FQI30N06L May 2001 QFET FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET , / FQI30N06L 60 32 22.6 128 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C , Rev. A1. May 2001 FQB30N06L / FQI30N06L Electrical Characteristics Symbol Parameter TC = 25 , / FQI30N06L Typical Characteristics 10 2 ID, Drain Current [A] 10 1 ID, Drain Current [A , Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB30N06L / FQI30N06L Typical
Fairchild Semiconductor
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SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSP4N60A ssr2955 SC70-6 FDG6323L FDG6324L FDG6331L FDC6323L FDC6324L

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model QFET ® FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET General Description Features , Voltage - Continuous (TC = 25°C) Drain Current FQB30N06L / FQI30N06L 60 Units V 32 A - , Corporation Rev. A2. Oct 2008 FQB30N06L / FQI30N06L October 2008 Symbol TC = 25°C unless , Rev. A2. Oct 2008 FQB30N06L / FQI30N06L Electrical Characteristics FQB30N06L / FQI30N06L , , (Normalized) Drain-Source Breakdown Voltage FQB30N06L / FQI30N06L Typical Characteristics 1.5 1.0
Fairchild Semiconductor
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FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 bc547 spice model TN3440A TN4033A TN5415A TN6705A TN6707A TN6714A
Abstract: QFET TM FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET General Description Features , (TC = 25°C) Drain Current FQB30N06L / FQI30N06L 60 Units V 32 A - Continuous (TC = , . A1. May 2001 FQB30N06L / FQI30N06L May 2001 Symbol TC = 25°C unless otherwise noted , FQB30N06L / FQI30N06L Electrical Characteristics FQB30N06L / FQI30N06L Typical Characteristics , ) Drain-Source Breakdown Voltage FQB30N06L / FQI30N06L Typical Characteristics 1.0 Notes : 1. VGS = Fairchild Semiconductor
Original

FQPF*10n20c

Abstract: FQPf10N60C FQB30N06L / FQI30N06L May 2001 QFET FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET , / FQI30N06L 60 32 22.6 128 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C , Rev. A1. May 2001 FQB30N06L / FQI30N06L Electrical Characteristics Symbol Parameter TC = 25 , / FQI30N06L Typical Characteristics 10 2 ID, Drain Current [A] 10 1 ID, Drain Current [A , Fairchild Semiconductor Corporation Rev. A1. May 2001 FQB30N06L / FQI30N06L Typical
Fairchild Semiconductor
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FDZ203N FQPF*10n20c FQPf10N60C FQP17P06 FQPF10N20C FQA90N08 fqpf6n80 FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N
Abstract: QFET ® FQB30N06L / FQI30N06L 60V LOGIC N-Channel MOSFET General Description Features , Continuous (TC = 25°C) Drain Current IDM Drain Current VGSS FQB30N06L / FQI30N06L 60 EAS , Fairchild Semiconductor Corporation Rev. A2. Oct 2008 FQB30N06L / FQI30N06L October 2008 Symbol , ©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008 FQB30N06L / FQI30N06L Electrical Characteristics FQB30N06L / FQI30N06L Typical Characteristics 10 Top : ID, Drain Fairchild Semiconductor
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FQB30N06LTM