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Part : FLU10XM Supplier : Sumitomo Electric Manufacturer : Component Distributors Stock : 43 Best Price : - Price Each : -
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FLU10XM Datasheet

Part Manufacturer Description PDF Type
FLU10XM Eudyna Devices L-Band Medium & High Power GaAs FET Original
FLU10XM-E1 Fujitsu FET: P Channel: ID 0.45 A Original

FLU10XM

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FLU10XM L-Band Medium & High Power GaAs FETs FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in , Compression Point Data Sheets 152 1998 Microwave Databook FLU10XM L-Band Medium & High Power , FLU10XM L-Band Medium & High Power GaAs FETs +j50 +j25 +j100 0.5 GHz 1 S11 S22 +90¡ S21 S12 , Sheets 154 1998 Microwave Databook FLU10XM L-Band Medium & High Power GaAs FETs Case Style Fujitsu
Original
U10XM

FLU10XM

Abstract: ^^^^^^^^ FLU10XM _ L-Band Medium & High Power GaAs FET FEATURES â'¢ High Output Power: P1dB , (SMT) Package â'¢ Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base , % retested. Edition 1.2 July 1999 FUJITSU FLU10XM L-Band Medium & High Power GaAs F ET POWER DERATING , " * * * * * * 'ladd 8 10 12 14 16 18 Input Power (dBm) 50 40 30 20 10 TD T3 CO P" Fujfrsu FLU10XM , FLU10XM L-Band Medium & High Power GaAs F ET Case Style "XM" Metal-Ceramic Hermetic Package (0.150
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FCSI0598M200
Abstract: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in , FLU10XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 5 Total Power Dissipation (W) 4 3 2 1 , hadd (%) 40 FLU10XM L-Band Medium & High Power GaAs FET +j50 +j25 +j100 0.5 GHz 1 S11 S22 , -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic Fujitsu
Original

FLU10XM

Abstract: FLU10 FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , 1999 1 FLU10XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs , ) 2 18 add (%) 0 Output Power (dBm) Total Power Dissipation (W) 5 FLU10XM , -48.5 .886 -164.5 Download S-Parameters, click here 3 FLU10XM L-Band Medium & High
Eudyna Devices
Original
FLU10
Abstract: FLU10XM L-Band Medium & High Power GaAs FET FEATURES â'¢ High Output Power: P1dB=29.5dBm (Typ , ) Package â'¢ Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , . Any lot failure shall be 100% retested. Edition 1.2 July 1999 1 FLU10XM L-Band Medium & , (%) 0 Output Power (dBm) Total Power Dissipation (W) 5 FLU10XM L-Band Medium & High , -48.5 .886 -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Fujitsu
Original
Abstract: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in , October 2004 1 FLU10XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN , ) 40 FLU10XM L-Band Medium & High Power GaAs FET S11 S22 +j100 0.5 GHz 1 +j50 +j25 +90° , -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic Eudyna Devices
Original

FLU10XM

Abstract: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , failure shall be 100% retested. Edition 1.2 July 1999 1 FLU10XM L-Band Medium & High Power , (dBm) Total Power Dissipation (W) 5 FLU10XM L-Band Medium & High Power GaAs FET S11 S22 , Download S-Parameters, click here 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM"
Fujitsu
Original

FLU10XM

Abstract: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , . Any lot failure shall be 100% retested. Edition 1.3 October 2004 1 FLU10XM L-Band Medium & , Output Power (dBm) Total Power Dissipation (W) 5 FLU10XM L-Band Medium & High Power GaAs FET , -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic
Eudyna Devices
Original

FLL55

Abstract: FLL101ME MK MK IB IB IB IL IL IL IP WG WF WG WF MH MH MG Frequency Band ·FLU10XM ·FLU17XM ·FLU35XM
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FLL101ME FLL171ME FLL351ME FLL120MK FLL55 fll171 fll300ip-2 FLL55MK FLL200IB-1

FLL57MK

Abstract: ELM7785-60F FLU35ZME1 FLU17XM FLU17ZME1 FLU10XM FLU10ZME1 SMT Devices 1 0.1 1.0 Applications: 1.5 LTE/WCDMA , 42.5 42.5 42.5 44.5 44.5 44.5 45.5 48 49.0 *2 Specifications Part Number FLU10XM FLU10ZME1 FLU17XM
Sumitomo Electric
Original
FLL57MK FLL357ME ELM7785-60F fll600iq-2 fll177 fll57 FLK027WG FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL300IL-2 FLL200IB-2

FMC141401-02

Abstract: fujitsu gaas marking code FLC103WG FLK022WG FLK052WG C053 C103 K022 K052 Case Style "WG" FLU10XM FLU17XM FLU35XM Y U " Case
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FMC141401-02 fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03

FLC301XP

Abstract: FLC301XP equivalent FSX52X/WF FSU01LG FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL105MK FLL120MK FLL200IB
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FLC301XP FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor GaAs L / S Band Medium Power HJ FET (See-A part # for Pb-free) Fujitsu FLU10XM NE651R479A Closest
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Original
MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 MGF4919G fujitsu gaas fet fhx76lp 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545