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Part : FLM0910-12F Supplier : Sumitomo Electric Manufacturer : Component Distributors Stock : 10 Best Price : - Price Each : -
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FLM0910-2 Datasheet

Part Manufacturer Description PDF Type
FLM0910-2 N/A High Frequency Device Data Book (Japanese) Scan
FLM0910-2 N/A FET Data Book Scan
FLM0910-25F Eudyna Devices X-Band Internally Matched FET Original
FLM0910-25F Fujitsu X, Ku-Band Internally Matched FET Original
FLM0910-25F-E1 Fujitsu Original

FLM0910-2

Catalog Datasheet MFG & Type PDF Document Tags

FLM0910-2

Abstract: FLM0910-2 Internally M a tc h e d P o w e r G aA s F E T s FEATURES · High Output Power: P-idg = , ~ 10.5GHz · Impedance Matched Zin/Zout = 50Q · Hermetically Sealed Fuffrsu DESCRIPTION The FLM0910-2 , Sheets Fuîfrsu f U JIIjU Internally M a tc h e d P o w e r G aA s F E T s FLM0910-2 DRAIN , 477 1998 Microwave Databook FLM0910-2 Internally M a tc h e d P o w e r G aA s F E T s , JII FUÎÎtSU j U Internally M a tc h e d P o w e r G aA s F E T s FLM0910-2 Case Style
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OCR Scan
Abstract: FLM0910-2 FUJITSU Internally Matched Power GaAs FETs FEATURES â'¢ High Output Power: P ^ b = 33.5dBm (Typ.) â'¢ High Gain: G ^ b = 7.5dB (Typ.) â'¢ High PAE: riadd = 31% (Typ.) â'¢ Broad Band: 9.5 ~ 10.5GHz â'¢ Impedance Matched Zin/Zout = 50Q â'¢ Hermetically Sealed DESCRIPTION T h , 1998 Microwave Databook G .C.P.: Gain Com pression Point 476 Data Sheets FLM0910-2 FIIH , H z) Data Sheets 35 477 1998 Microwave Databook FLM0910-2 ciinTCii r UJ11bU -
OCR Scan
FLM09I0-2

FLL101ME

Abstract: FLL100MK 800m FLM0910-2 it±ii X~Ku-Band PA GaAs N D 15 DS -5 17.5 1.5 5 -1 -3.5 5 50m 600m 5 600 , =7. 5dBtyp f=9. 5â'"10. 5GHz 203 Affi^flSÃSöiS FLM0910-2 Pout=36dBm, Gp=7. 5dBtyp f=9. 5-10
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OCR Scan
FLK202MH-14 FLL50MK FLL101ME FLL171ME FLL351ME FLM0910-4C FLL100MK FLM1414-4C fll171 FLM0910-8C FLK202XV FLL10ME FLL17MB FLL35ME
Abstract: FLM0910-2 Transistors N-Channel UHF/Microwave MESFET V(BR)DSS (V)15 V(BR)GSS (V)-5 I(D) Max. (A)1.5 P(D) Max. (W)15 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.0Ã' I(DSS) Max. (A)1.5 @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.600uÃ' g(fs) Max; (S) Trans. conduct; @V(DS) (V) (Test Condition)5 @I(D) (A) (Test Condition)600m V(GS)off Max. (V)-3.5 @V(DS) (V) (Test Condition)5 Power Gain Min. (dB) @V(DD) (V) (Test Condition) @I(D) (A American Microsemiconductor
Original
Abstract: -4C FLM8596-8C FLM0910-2 FLM0910-4C FLM0910-8C FLM1011-2 FLM1011-4C FLM1011-8C FLM1213-4C FLM1213-8C FLM1414 -
OCR Scan
FLM8596-4C FLM1414-2 FLM1414-6F FLM1414-8C FLM1414-12F

31-oq

Abstract: 31oQ Databook 248 Data Sheets Internally Matched Power G aAs F ETs FLM0910-2 S-PARAMETERS VDS =
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OCR Scan
31-oq 31oQ

FMC141401-02

Abstract: fujitsu gaas marking code -2 FLM1414-4C FLM1414-6F FLM1414-8C FLM8596-4C FLM0910-2 FLM0910-4C 1011-4C/4D 1011-6F 1213-4C 1213-6F
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OCR Scan
FMC141401-02 fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03

FLC301XP

Abstract: FLC301XP equivalent -4C FLM8596-8C FLM0910-2 FLM0910-4C FLM0910-8C FLM1011-2 FLM1011-4C/4D FLM1011-6F FLM1011-8C/8D FLM1011
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OCR Scan
FLC301XP FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D

ED-4701

Abstract: FLM0910-25F FLM0910-25F X-Band Internally Matched FET FEATURES High Output Power: P1dB=44dBm(Typ.) High , 50 Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally , - G ESD S - 1 FLM0910-25F X-Band Internally Matched FET OUTPUT POWER & POWER , ) 2 10.4 10.6 10.8 40 42 Power Added Efficiency (%) 46 100 FLM0910-25F , -2. 58 -9. 87 3 FLM0910-25F X-Band Internally Matched FET Package Out Line CASE STYLE
Eudyna Devices
Original
ED-4701

FLM0910-25F

Abstract: ED-4701 FLM0910-25F X-Band Internally Matched FET FEATURES High Output Power: P1dB=44dBm(Typ.) High , 50 Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally , 43 Unit 1 FLM0910-25F X-Band Internally Matched FET OUTPUT POWER & POWER ADDED EFFICIENCY , ) 2 10.4 10.6 10.8 40 42 Power Added Efficiency (%) 46 100 FLM0910-25F , -2. 58 -9. 87 3 FLM0910-25F X-Band Internally Matched FET Package Out Line CASE STYLE
Eudyna Devices
Original
103-61 s-parameter s11 s12 s21 10000 9.5-10.5GHz

9.5-10.5GHz

Abstract: FLM0910-25F X-Band Internally Matched FET FEATURES High Output Power: P1dB=44dBm(Typ.) High Gain , Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matched for , FLM0910-25F X-Band Internally Matched FET OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER POWER , Frequency (GHz) 10.4 10.6 10.8 Pin=26dBm Pin=30dBm Pin=39dBm P1dB Pin=37dBm Pin=34dBm 2 FLM0910-25F , . 32 3 FLM0910-25F X-Band Internally Matched FET Package Out Line CASE STYLE : IK Unit
Eudyna Devices
Original

9.5-10.5GHz

Abstract: FLM0910-25F X, Ku-Band Internally Matched FET FEATURES High Output Power: P1dB=44dBm(Typ.) High , 50 Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally , =100pF, R=1.5k) Edition 1.2 August 2003 1 FLM0910-25F X, Ku-Band Internally Matched FET OUTPUT , dBm 39 dBm 2 35 dBm P1dB FLM0910-25F X, Ku-Band Internally Matched FET S-PARAMETER , . 93 35. 26 25. 29 15. 68 6. 13 -2. 58 -9. 87 3 FLM0910-25F X, Ku-Band Internally
Fujitsu
Original
FCSI0202M200