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FLL200IB Datasheet

Part Manufacturer Description PDF Type
FLL200IB-1 Eudyna Devices L-Band Medium & High Power GaAs FET Original
FLL200IB-1 N/A FET Data Book Scan
FLL200IB-1-E1 Fujitsu FET: P Channel: ID 12 A Original
FLL200IB-2 Eudyna Devices L-Band Medium & High Power GaAs FET Original
FLL200IB-2 N/A FET Data Book Scan
FLL200IB-2-E1 Fujitsu FET: P Channel: ID 12 A Original
FLL200IB-3 Eudyna Devices L-Band Medium & High Power GaAs FET Original
FLL200IB-3-E1 Fujitsu FET: P Channel: ID 12 A Original

FLL200IB

Catalog Datasheet MFG & Type PDF Document Tags

FLL200IB-3

Abstract: FLL200 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · , Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current Test Conditions IDSS gm VDS = 5V , Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & , , FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band
Eudyna Devices
Original
FLL200 059 906 051
Abstract: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FETs FEATURES · High Output , FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power , Channel Tem perature Rise CASE STYLE: IB FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Idsr ^add , Data Sheets FUJÎTSU FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FETs , , FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FETs 0 50 100 150 200 Case -
OCR Scan

1200 - 1400 MHz L-Band Applications

Abstract: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · High , FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Symbol IDSS gm Vp VGSO P1dB Test Conditions VDS = 5V, VGS = 0V , Compression Point Edition 1.2 October 2004 1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & , (%) 40 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET Case Style , 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL200IB-1, FLL200IB-2
Eudyna Devices
Original
1200 - 1400 MHz L-Band Applications

1200 - 1400 MHz, L-Band Applications

Abstract: fujitsu l-band power fets FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES â'¢ High , FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power , .: Gain Compression Point FUJITSU FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs , 25 27 29 31 33 Input Power (dBm) 50 40 30 20 10 "O "O CO FUJITSU FLL200IB-1, FLL200IB-2, FLL200IB-3 , 10V ids = o.6 loss (Typ.) f=1,5GHz 41.5 42.5 - dBm FLL200IB-2 f=2.3GHz FLL200IB-3 f
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OCR Scan
1200 - 1400 MHz, L-Band Applications fujitsu l-band power fets et 1109 FCSI0598M200

FLL200IB-1

Abstract: FLL200IB-2 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · , G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current , 2004 Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band , FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET 2.0 Min. (0.079) Case Style , , FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band
Eudyna Devices
Original

FLL200IB-1

Abstract: FLL200 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · , Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current Test Conditions IDSS gm VDS = 5V , Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & , , FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band
Fujitsu
Original
Abstract: FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES â'¢ â'¢ â'¢ â , FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high , Conditions FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current VGSO , 1999 Min. - G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band , ANG 168.9 156.2 142.6 137.3 107.0 -128.3 166.5 147.5 133.4 119.1 FLL200IB-1, FLL200IB-2 Fujitsu
Original
Abstract: Vd S vgs pt FLL200IB-L FLL200IB-2 , FLL200IB-3 Condition Rating 15 -5 Tc = 25°C Unit V V , Transconductance Pinch-off Voltage Gate Source Breakdown Voltage FLL200IB-1 Output Power at 1dB G.C.P. FLL200IB-2 FLL200IB-3 FLL200IB-1 Power Gain at 1dB G.C.P. FLL200IB-2 FLL200IB-3 Drain Current Power added Efficiency , Databook 1 08 Data Sheets L-Band Medium & High Power GaAs FETs +¡50 >11 +90" FLL200IB-1 321 , 1997 Microwave Databook L-Band Medium & High Power GaAs b E l s FLL200IB-2 S-PARAMETERS VDs = -
OCR Scan

FSX52WF

Abstract: fujitsu "application notes" (FLL200IB-1) f = 2.3 GHz (FLL200IB-2) f = 2.6 GHz (FLL200IB-3) FSX51WF FSX52WF FLL351ME , = 1.5 GHz (FLL200IB-1) f = 2.3 GHz (FLL200IB-2) f = 2.6 GHz (FLL200IB-3) FSX51WF FLL101ME , Databook APPLICATION NOTES 11) FLL200IB-1 APPLICATION f=1.5GHz MATCHING CIRCUIT in CO INPUT £r = 9.7 t = 0.65 mm Units: mm 12) FLL200IB-2 APPLICATION f=2.3GHz MATCHING CIRCUIT CD 15 h -2.0 LO CD L O o INPUT OUTPUT er = 9.7 t = 0.65 mm Units: mm 13) FLL200IB-3 APPLICATION f
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OCR Scan
FLL120MK fujitsu "application notes" FMC141401-02 NF037 FLL101 fll171 FMC1414P1-02 FHC40LG FHX04LG FHX05LG FHX06LG FHX14LG FLL171ME

FLL200IB-1

Abstract: FLL200IB-2 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · , FLL200IB-3 FLL200IB-1 FLL200IB-2 FLL200IB-3 Drain Current Power added Efficiency Thermal Resistance , G.C.P.: Gain Compression Point 1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power , 166.5 147.5 133.4 119.1 FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET , , FLL200IB-2, FLL200IB-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band
Fujitsu
Original

FLL55

Abstract: FLL101ME FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL200IB-3* FLL300IL-1 FLL300IL
-
OCR Scan
FLU10XM FLL55 flu10 fll300ip-2 FLC253MH-6 FLU17XM FLU35XM FLL300IL-2 FLL300IL-3 FLL300IP-2

FLL57MK

Abstract: ELM7785-60F -2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 High Frequency Output , FLU17ZME1 FLU35XM FLU35ZME1 FLL107ME FLL177ME FLL357ME FLL57MK FLL120MK FLL200IB-1 FLL200IB-2 FLL200IB-3
Sumitomo Electric
Original
ELM7785-60F fll600iq-2 fll177 fll57 FLK027WG fll120 FLL810IQ-4C FLL600IQ-2 FLU10ZME1 FLL810I

FMC141401-02

Abstract: fujitsu gaas marking code 1213-8C 1414-2 1414-4C 1414-6F 1414-8C 8596-4C 0910-2 0910-4C Case Style "IB" 1 FLL200IB- 2 FLL200IB' FLL200IB- 3 FLM1011- 8C/8D FLM1011- 12F FLM1213- 12F FLM1414- 12F FLM3742- 4C/4E FLM3742- 8C/8E
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OCR Scan
fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 fujitsu x51 FLL300-1 MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03

FLL101ME

Abstract: FLL100MK 0.9 5 -1 -3.5 5 30m 300« 5 400» FLL200IBâ'"1 L-Band PA GaAs/SB N D 15 DS -5 83.3 8typ 12 5 -1 -3. 5 5 480m 4 5 4.8 FLL200IB-2 s±m L-Band PA GaAs/SB n D 15 DS -5 83.3 8typ 12 5 -1 -3. 5 , GSDS FLL2001B-1 Pout=42. 5dBm, Gp=lldBtyp f=l. 5GHz, ldBfiJi^EIS^. 146 GSDS FLL200IB-2
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OCR Scan
FLK202MH-14 FLL50MK FLM0910-2 FLM0910-4C FLM0910-8C FLM1011-4C FLL100MK FLM1414-4C FLK202MH-14 PA FLK202XV FLL10ME FLL17MB FLL35ME

FLC301XP

Abstract: FLC301XP equivalent FSX52X/WF FSU01LG FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL105MK FLL120MK FLL200IB-1 FLL200IB-2 FLL200IB-3 FLL300IL-1 FLL300IL-2 FLL300IL-3 FLL300IP-2 FLC091WF FLC161WF FLC311MG-4 FLC053WG
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OCR Scan
FLC301XP FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D