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FLL171ME Datasheet

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FLL171ME N/A High Frequency Device Data Book (Japanese) Scan
FLL171ME N/A FET Data Book Scan

FLL171ME

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FLL171ME L-Band Medium & High Power GaAs FETs FEATURES · · · · · High Output Power: P-| ^13=32.5dBm (Typ.) High Gain: G-|dB=12.5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package FIIMTCII \ DESCRIPTION The FLL171 ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that , 1998 Microwave Databook FUJÎTSU FLL171ME L-Band Medium & High Power GaAs F E T s Case Style -
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fujitsu l-band power fets
Abstract: -5 4.16 0.45 5 -1 -3.5 5 15m 150m 5 200» FLL171ME L-Band PA GaAs/SB N D 15 DS -5 7.6 , =12.5dB f=2.3GHz. 145 GSDS FLL171ME Pout=42. 5dB», Gp=13dBtyp f=l. 5GHz. ldBiiJifESgjä 146 -
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FLK202MH-14 FLL50MK FLL101ME FLL351ME FLM0910-2 FLM0910-4C FLL100MK FLM1414-4C FLM0910-8C FLM1011-4C FLK202MH-14 PA FLK202XV FLL10ME FLL17MB FLL35ME
Abstract: FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL200IB-3* FLL300IL-1 FLL300IL -
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FLU10XM FLL55 FLC253MH-6 flu10 fll300ip-2 FLU17XM FLU35XM FLL300IL-2 FLL300IL-3 FLL300IP-2
Abstract: Filinoli J FLL17IME L-Band Medium & High Power GaAs FETs FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ High Output Power: P1c|B=32.5dBnn (Typ.) High Gain: G-|C |g=12.5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL171ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make -
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Abstract: FLL300IP-2 300IP-2 Case Style "IP" o L 1 0 11 o FLL101ME FLL171ME FLL351ME Lot Number -
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FMC141401-02 fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 FSX52WF MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03
Abstract: a) 3.5 Watt f = 2.3 GHz FSX51WF FLL171ME FLL55MK P1dB = 35.5 dBm b) 9 Watt f = 2.3 -
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fujitsu "application notes" NF037 FLL101 FMC1414P1-02 FLK022WF FLM1011-12D FHC40LG FHX04LG FHX05LG FHX06LG FHX14LG FLK052WG
Abstract: FSX52X/WF FSU01LG FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL105MK FLL120MK FLL200IB -
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FLC301XP FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note CS98E1V6R800-K41D ISS1B1
Abstract: equivalent 10W LSBand Power GaAs MESFET, RoHS compliant Fujitsu FLL171ME NE6510179A Closest equivalent -
Original
MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 MGF4919G HPMA-2086 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545