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Part : FHX35X Supplier : FUJITSU Manufacturer : Bristol Electronics Stock : 36,442 Best Price : - Price Each : -
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FHX35 Datasheet

Part Manufacturer Description PDF Type
FHX35LG Eudyna Devices TRANS JFET 4V 4LG Original
FHX35LG Fujitsu Low Noise HEMT Original
FHX35LG Fujitsu FET, P Channel, ID 0.085 A Original
FHX35LG N/A High Frequency Device Data Book (Japanese) Scan
FHX35LG N/A FET Data Book Scan
FHX35LG002 Eudyna Devices TRANS JFET 6V 4LG Original
FHX35LG/002 Fujitsu Low Noise HEMT Original
FHX35LG/002-E1 Fujitsu FET: P Channel: ID 0.085 A Original
FHX35LG-E1 Fujitsu FET: P Channel: ID 0.085 A Original
FHX35LP Fujitsu Super Low Noise HEMT Original
FHX35X Fujitsu FET, P Channel, ID 0.085 A Original
FHX35X Fujitsu Low Noise HEMT Original
FHX35X N/A FET Data Book Scan
FHX35X002 Eudyna Devices TRANS JFET 6V 4LG Original
FHX35X/002 Fujitsu Low Noise HEMT Original
FHX35X/002-E1 Fujitsu FET: P Channel: ID 0.085 A Original
FHX35X-E1 Fujitsu FET: P Channel: ID 0.085 A Original

FHX35

Catalog Datasheet MFG & Type PDF Document Tags

fujitsu gaas fet

Abstract: S3V 03 LIGHTWAVE COM PON EN TS & M OD ULES GaAs FETs and HEMTs FOR RECEIVER FRONT ENDS 9m (mS) ·g s o (nA) Cgs (PF) CGD (PF) Part Number V d S=3V lDS=20mA V q S=-2V V d S=3V lDS=20mA VDS=3V lDS=10mA Notes FHX35 LG/002 FHX35X/002 FSX51 LG/001 60 (V d S=2V) 60 (VDS=2V) 10 0.47 0.035 Packaged HEMT 10 0.27 0.035 HEMT Chip 33 20 0.5 0.03 Packaged GaAs FET FSX51X/011 33 20 0.3 0.03 GaAs FET Chip FUJITSU 1997 Lightwave Components &
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fujitsu gaas fet S3V 03 S3V 05 fsx51x

FLL105

Abstract: FLL55 0.06 0.04 Q_ o o 1 3 Q. 3 FHC40 15 FHX35 0.02 FHX13/14/04/05/06 10 FHR02 3 4
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FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL55 FLL101 fll171

FHX34X

Abstract: FHX13x MICRO WAV, SEM ICONDUCTOR LOW NOISE HEMT CHIPS Electrical Characteristics (Ta = 25 C) Part Number NF TYP. (dB) 0.75 0.9 1.1 0.45 0.55 0.9 1.2 0.55 1.0 0.75 Gas TYP. (dB) 10.5 10.5 10.5 13.0 13.0 10.0 10.0 12.0 9.0 10.0 f (GHz) 12 12 12 12 12 12 12 12 18 18 Vd s m 2 2 2 2 2 3 3 2 2 2 id s (mA) 10 10 10 10 10 10 10 10 10 Frequency Band FHX04X FHXQ5X FHX06X FHX13X FHX14X FHX34X FHX35X FHX45X FHR02X FHR20X X/Ku K 5 FUJITSU Short Form 1 M icrowave Semiconductor
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FMC141401-02

Abstract: fujitsu gaas marking code FLR016FH FLR026FH none Case Style 'FH" FHC40LG FHX04LG FHX05LG FHX06LG FHX13LG FHX14LG FHX35LG , stripes and dots given below. Marking Format Part Number Color FHX13LG FHX04LG FHX35LG FHC40LG
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FMC141401-02 fujitsu gaas marking code Fujitsu K022 FUJITSU L101 FSX52WF fujitsu x51 MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor @ 12 GHz Fujitsu FHX35LG NE4210S01 Closest equivalent Super Low Noise Pseudomorphic HJ FET RoHS compliant Fujitsu FHX35X NE321000 Closest equivalent Super Low Noise Pseudomorphic HJ FET Fujitsu
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MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545
Abstract: FHX35LG Super Low Noise HEMT FEATURES â'¢ Low Noise Figure: 1.2B (Typ.)@f=12GHz â'¢ High , DESCRIPTION The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise , FHX35LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 300 250 200 LG , -0.8V -1.0V 0 1 2 Drain-Source Voltage (V) 2 3 FHX35LG Super Low Noise HEMT NF , . FREQUENCY FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE +j50 +j100 +j25 +j250 +j10 Eudyna Devices
Original
2-18GH

high frequency transistor ga as fet

Abstract: GaAs FET HEMT Chips FHX35X GaAs FET & HEMT Chips FEATURES · · · · Low Noise Figure: 1.2dB (Typ.)@f=12GHz High , Gate Drain Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended for , Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX35X Associated , FHX35X GaAs FET & HEMT Chips POWER DERATING CURVE 350 Total Power Dissipation (W) 300 250 200 150 100 , 20 30 Drain Current (mA) FHX35X NOISE PARAMETERS VDS=3V, IDS=10mA Freq. (GHz) 2 4 6 8 10 12 14
Fujitsu
Original
high frequency transistor ga as fet GaAs FET HEMT Chips fujitsu hemt FCSI0598M200

FHX35LP

Abstract: FHX35LG Drain-Source Voltage Gate-Source Voltage Total Power Dissipation FHX35LG Storage Temperature Channel Temperature Rating 4.0 -3.0 290 -65 to +175 FHX35LP FHX35LG ¡C -65 to +150 ¡C 175 ¡C 150 Tstg Unit V V mW ¡C Tch FHX35LP *Note: Mounted on Al2O3 board (30 x 30 x , FHX35LG/LP Super Low Noise HEMT FEATURES · · · · · Low Noise Figure: 1.2B (Typ.)@f=12GHz , Reliability Cost Effective Ceramic Microstrip (SMT) Package DESCRIPTION The FHX35LG/LP is a High Electron
Fujitsu
Original
FHX35LG/LP

low noise hemt

Abstract: transistor hemt FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated , FHX35LG is a High Electron Mobility Transistor(HEMT) intended for general purpose, low noise and high gain , °C/W 1200 1201 3201 10001 less 3200 10000 over Edition 1.1 July 1999 1 FHX35LG Super , FHX35LG Super Low Noise HEMT NF & Gas vs. FREQUENCY 20 VDS=3V IDS=10mA Noise Figure (dB) Noise Figure , Ambient Temperature (°K) Input Power (dBm) 3 FHX35LG Super Low Noise HEMT TYPICAL NOISE FIGURE
Eudyna Devices
Original
low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742
Abstract: FHX35X Item GaAs FET & HEMT Chips Symbol IDSS 9m ELECTRICAL C H A R A C T E R ISE CS (Ambient Temperature Ta=25° C) Test Conditions VDS =2V, V q s = OV VDS = 2V, Id s = 10mA VDS = 2V, Id s = , Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX35X vp VGSO NF Gas Associated Gain , ) FHX35X NOISE PARAMETERS V d S = 3 V , lDS=10mA Freq. (GHz) 2 4 6 8 10 12 14 16 18 20 22 ropt (MAG , GaAs F ET & HEM T Chips FHX35X FREQUENCY (MHZ) 100 500 1000 2000 3000 4000 5000 6000 7000 8000 -
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FHX35

Abstract: eudyna FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged , 20 nA Gate-Source Capacitance CGS FHX35X/002 - 0.27 - FHX35LG/002 - , =10mA VDS=3V, IDS=10mA 1 Unit pF pF FHX35X/002 FHX35LG/002 Low Noise HEMT Fig. 2 , -0.8V 0.5 FHX35LG/002 0.4 0.3 FHX35X/002 -1.0V 0 1 2 0.2 3 Drain-source , FHX35X/002 FHX35LG/002 Low Noise HEMT BONDING PROCEDURE FOR FET CHIPs Caution must be excercised to
Eudyna Devices
Original
eudyna hemt low noise die

fujitsu hemt

Abstract: FHX35LG FHX35X/002 FHX35LG/002 FEATURES · · · · · High Transconductance Low Leakage Current Low Gate , optical receiver in high speed application. DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged , itiA V q S=-2V V d S=3V FHX35X/002 FHX35LG/002 Min. 15 45 -0.2 Limits Min. 40 60 -1.0 10 0.27 , ts FHX35X/002 FHX35LG/002 Low Noise HEM T Fig. 1 Drain Current vs. Drain-Source Voltage , . FUJITSU D a ta s h e e ts [2 4 L ightw ave C om ponents & M odules C atalog Low Noise HEMT FHX35X
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LOW HEMT low noise hemt transistor 35LG/002 35X/0 HX35LGI002

FHX35LG

Abstract: FHX35 FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged , VDS=3V IDS=10mA VDS=3V, IDS=10mA 1 Unit pF pF FHX35X/002 FHX35LG/002 Low Noise , 30 -0.4V 20 -0.6V 10 -0.8V 0.5 FHX35LG/002 0.4 0.3 FHX35X/002 -1.0V 0 1 2 , Gate-Source Voltage (V) 2 FHX35X/002 FHX35LG/002 Low Noise HEMT BONDING PROCEDURE FOR FET CHIPs , Layout FHX35X/002 3 FHX35X/002 FHX35LG/002 Low Noise HEMT Case Style "LG" Metal-Ceramic
Fujitsu
Original

FLC301XP

Abstract: FHR20X G aAs FET & HEMT Chips ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25 C) VDS (V) VOS 00 Recommended Pt (W) Maximum Operating Tc=25°C Voltage (V) PART NO. FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Rth (°C/W) o HI (fi* Tch (°C) 3.5 3.5 3.5 3.5 3.5 4.0 3.5 3.5 3.5 12 12 12 15 15 15 15 15 15 15 15 15 12 12 12 12 -3 -3 -3 -3 -3
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FLC151 Flr016xp

FSX52WF

Abstract: GaAs HEMTs X band LOW NOISE HEMTs Electrical Characteristics (Ta = 25°C) Part Number NF TYP. (dB) 0.30 0.45 0.60 0.75 0.9 1.1 1.2 1.2 Gas TYP. (dB) 15.5 12.5 12.5 10.5 10.5 10.5 10.0 8.5 f (GHz) 4 12 12 12 12 12 12 18 VDS (V) 2 2 2 2 2 2 3 2 ·os (mA) 10 10 10 10 10 10 10 10 Package Type LG/LP LG/LP LG/LP LG/LP Frequency Band C FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH * LP also available X/Ku LG/LP LG/LP LG/LP FH K LOW NOISE & GENERAL PURPOSE GaAs FETs
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FSU01LG FSX017LG GaAs HEMTs X band FSXQ17WF FSX51WF

FHX35

Abstract: FHX35LG 11.50 VDS=2V, lDS=10mA, 12GHZ â'¢ FHX35LG ®É : SHF «¡Sftií m : mmmmuo ¡stMm. «ig
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FHX06FA FHX15FA FHX16FA 10IIA MFGI100

FHX35LG

Abstract: FHX35LP Dissipation Pt* 290 mW Storage Temperature FHX35LG Tstg -65 to+175 °C FHX35LP -65 to+150 °C Channel Temperature FHX35LG TCh 175 °C FHX35LP 150 °C *Note: Mounted on Al203 board (30 x 30 x 0.65mm) Fujitsu , -107.4 .127 -110.9 .547 124.3 Fujfrsu FHX35LG/LP Super Low Noise HEMT S-PARAMETERS FHX35LP VDS = 3V , Effective Ceramic Microstrip (SMT) Package DESCRIPTION The FHX35LG/LP is a High Electron Mobility , performance. FHX35LG/LP Super Low Noise HEMT ABSOLUTE MAXIMUM RATING (Ambienl Temperature Ta
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1 987 280 103 4000Q
Abstract: FHX35X GaAs FET & HEMT Chips FEATURES â'¢ â'¢ â'¢ â'¢ Low Noise Figure: 1.2dB (Typ , for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility , Noise Figure FHX35X Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip , . Edition 1.3 October 2004 1 FHX35X GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs , (dB) IDS=30mA 10 Ga (max) & |S21|2 vs. FREQUENCY FHX35X NOISE PARAMETERS VDS=3V, IDS Eudyna Devices
Original

FLC301XP

Abstract: FLC301XP equivalent FHX35X FHX45X FHR02X FHR20X FHX04/05/06X FSX017X FSX52X FLK052XV FLR056XV CO Q _ c 15 FLX252XV , 324 Application Notes APPLICATION NOTES FHR02X, FHX04/05/06X FHX13X/14X, FHX35X, FHX45X FHR20X , 0.3 0.0275 4 4 4 10 800 EQUIVALENT CIRCUIT VALUES - HEMTs CIRCUIT ELEMENT 1 FHX35X FHX04X/05X/06X , FHX35X/LG FHX45X FHX13X/LG FHX14X/LG FHX04X/LG FHX05X/LG FHX06X/LG FHR02X FHR20X FSX017X/LG/WF FSX51X/FH
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FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B

fld3c2pj

Abstract: FSX51 q s =3V lDS=20mA VGS=-2V VDS=3V lDS=20mA VDS=3V lD S = 1 0 m A FHX35LG /002 60 (VDS=2V) 60 (VDS=2V) 10 i j 10 0.47 0.035 Packaged HEMT FHX35X/002 0.27 0.035 HEMT Chip
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FLD150F5CN fld3c2pj FMM362HE FLD5F6CX FLD148G3NL Fujitsu FLD5F6CX FRM5W231DR FLD148G3NL-B 361HG 362HE 362HG 363HE
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