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  1 - 6 of about 6 for FE1C   
  Part Number Manufacturer   Description      
 1.   FE1C  FE1C General Semiconductor, Inc.   GLASS PASSIVATED FAST EFFICIENT RECTIFIER 51.05 Kb  2 Pg.  
 2.   FE1C  FE1C Diotec Semiconductor   Superfast silicon rectifier 31.42 Kb  2 Pg.  
 3.   FE1C  FE1C Vishay   DIODE ULTRA FAST RECOVERY RECTIFIER 150V 1A 2 pin DO-204AP 351.68 Kb  6 Pg.  
 4.   FE1C  FE1C International Semiconductor, Inc.   Rectifier Diode, Ultra Fast Recovery Rectifier, Single, 150V, DO-204AP, 2-Pin 115.59 Kb  1 Pg.  
 5.   FE1C  FE1C General Semiconductor, Inc.   GLASS PASSIVATED FAST EFFICIENT RECTIFIER 45.89 Kb  2 Pg.  
 6.   FE1C  FE1C General Semiconductor, Inc.   Glass Passivated Ultrafast Rectifier 45.54 Kb  2 Pg.  

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  1 - 10 of about 123+ for FE1C   
1. Datasheet Text Contains FE1C
45.54 Kb  •  2 Pages

Abstract: ... SYMBOLS FE1A FE1B FE1C FE1D UNITS. Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V. Maximum RMS voltage VRMS 35 70 105 140 V. Maximum DC blocking voltage VDC 50 100 150 200 V. Maximum average ...

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2. Datasheet Text Contains FE1C
15.45 Kb  •  2 Pages

Abstract: ... ‐ 3 of the EEPROM non-volatile register (EEBP0 ‐ EEBP3 of location $FE1C) to 0s. Note that this also disables block protection for all four blocks of the EEPROM array. Workaround 2 Execute this code ...

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3. Datasheet Text Contains FE1C
326.48 Kb  •  4 Pages

Abstract: ... ‐ 3 of the EEPROM non-volatile register (EEBP0 ‐ EEBP3 of location $FE1C) to 0s. Note that this also disables block protection for all four blocks of the EEPROM array. Workaround 2 Execute this code ...

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4. Datasheet Text Contains FE1C
331.09 Kb  •  5 Pages

Abstract: ... FE1C VRRM = 150 V DO-204AP ( G1) FE1D VRRM = 200 V DO-204AP ( G1) Parameter Test condition Part Symbol Value Unit. Reverse voltage = Repetitive peak reverse voltage see electrical characteristics ...

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5. Datasheet Text Contains FE1C
54.24 Kb  •  4 Pages

Abstract: ... ‐ 3 of the EEPROM non-volatile register (EEBP0 ‐ EEBP3 of location $FE1C) to 0s. Note that this also disables block protection for all four blocks of the EEPROM array. Workaround 2 Execute this code ...

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6. Datasheet Text Contains FE1C
58.3 Kb  •  4 Pages

Abstract: ... ‐ 3 of the EEPROM non-volatile register (EEBP0 ‐ EEBP3 of location $FE1C) to 0s. Note that this also disables block protection for all four blocks of the EEPROM array. Workaround 2 Execute this code ...

Labels: FE1C

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7. Datasheet Text Contains FE1C
46.38 Kb  •  2 Pages

Abstract: ... °C ambient temperature unless otherwise specified SYMBOLS FE1A FE1B FE1C FE1D UNITS. Maximum instantaneous forward voltage at 2.0A VF 0.95 V. Maximum DC reverse current TA=25°C 2.0. at rated DC ...

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8. Datasheet Text Contains FE1C
51.05 Kb  •  2 Pages

Abstract: ... SYMBOLS FE1A FE1B FE1C FE1D UNITS. Maximum repetitive peak reverse voltage VRRM 50 100 150 200 Volts. Maximum RMS voltage VRMS 35 70 105 140 Volts. Maximum DC blocking voltage VDC 50 100 150 200 Volts ...

Labels: FE1C

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9. Datasheet Text Contains FE1C
45.89 Kb  •  2 Pages

Abstract: ... SYMBOLS FE1A FE1B FE1C FE1D UNITS. Maximum repetitive peak reverse voltage VRRM 50 100 150 200 Volts. Maximum RMS voltage VRMS 35 70 105 140 Volts. Maximum DC blocking voltage VDC 50 100 150 200 Volts ...

Labels: FE1C

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10. Datasheet Text Contains FE1C
73.72 Kb  •  6 Pages

Abstract: ... When the EEPRTCT bit of the EENVR1 (address $FE1C) register is programmed to 0, EEPROM protection is enabled for the EEPROM1 located at $0800 to $09FF. This means that the software cannot program ...

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