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| Part Number | Manufacturer | Description | |||||
| 1. | General Semiconductor, Inc. | GLASS PASSIVATED FAST EFFICIENT RECTIFIER | 51.05 Kb | 2 Pg. | |||
| 2. | Diotec Semiconductor | Superfast silicon rectifier | 31.42 Kb | 2 Pg. | |||
| 3. | Vishay | DIODE ULTRA FAST RECOVERY RECTIFIER 150V 1A 2 pin DO-204AP | 351.68 Kb | 6 Pg. | |||
| 4. | International Semiconductor, Inc. | Rectifier Diode, Ultra Fast Recovery Rectifier, Single, 150V, DO-204AP, 2-Pin | 115.59 Kb | 1 Pg. | |||
| 5. | General Semiconductor, Inc. | GLASS PASSIVATED FAST EFFICIENT RECTIFIER | 45.89 Kb | 2 Pg. | |||
| 6. | General Semiconductor, Inc. | Glass Passivated Ultrafast Rectifier | 45.54 Kb | 2 Pg. |
| « Previous 1 Next » |
| 1. | 45.54 Kb • 2 Pages |
Abstract: ... SYMBOLS FE1A FE1B FE1C FE1D UNITS. Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V. Maximum RMS voltage VRMS 35 70 105 140 V. Maximum DC blocking voltage VDC 50 100 150 200 V. Maximum average ... Labels: FE1C |
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| 2. | 15.45 Kb • 2 Pages |
Abstract: ... ‐ 3 of the EEPROM non-volatile register (EEBP0 ‐ EEBP3 of location $FE1C) to 0s. Note that this also disables block protection for all four blocks of the EEPROM array. Workaround 2 Execute this code ... Labels: FE1C |
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| 3. | 326.48 Kb • 4 Pages |
Abstract: ... ‐ 3 of the EEPROM non-volatile register (EEBP0 ‐ EEBP3 of location $FE1C) to 0s. Note that this also disables block protection for all four blocks of the EEPROM array. Workaround 2 Execute this code ... Labels: FE1C |
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| 4. | 331.09 Kb • 5 Pages |
Abstract: ... FE1C VRRM = 150 V DO-204AP ( G1) FE1D VRRM = 200 V DO-204AP ( G1) Parameter Test condition Part Symbol Value Unit. Reverse voltage = Repetitive peak reverse voltage see electrical characteristics ... Labels: FE1C |
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| 5. | 54.24 Kb • 4 Pages |
Abstract: ... ‐ 3 of the EEPROM non-volatile register (EEBP0 ‐ EEBP3 of location $FE1C) to 0s. Note that this also disables block protection for all four blocks of the EEPROM array. Workaround 2 Execute this code ... Labels: FE1C |
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| 6. | 58.3 Kb • 4 Pages |
Abstract: ... ‐ 3 of the EEPROM non-volatile register (EEBP0 ‐ EEBP3 of location $FE1C) to 0s. Note that this also disables block protection for all four blocks of the EEPROM array. Workaround 2 Execute this code ... Labels: FE1C |
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| 7. | 46.38 Kb • 2 Pages |
Abstract: ... °C ambient temperature unless otherwise specified SYMBOLS FE1A FE1B FE1C FE1D UNITS. Maximum instantaneous forward voltage at 2.0A VF 0.95 V. Maximum DC reverse current TA=25°C 2.0. at rated DC ... Labels: FE1C |
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| 8. | 51.05 Kb • 2 Pages |
Abstract: ... SYMBOLS FE1A FE1B FE1C FE1D UNITS. Maximum repetitive peak reverse voltage VRRM 50 100 150 200 Volts. Maximum RMS voltage VRMS 35 70 105 140 Volts. Maximum DC blocking voltage VDC 50 100 150 200 Volts ... Labels: FE1C |
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| 9. | 45.89 Kb • 2 Pages |
Abstract: ... SYMBOLS FE1A FE1B FE1C FE1D UNITS. Maximum repetitive peak reverse voltage VRRM 50 100 150 200 Volts. Maximum RMS voltage VRMS 35 70 105 140 Volts. Maximum DC blocking voltage VDC 50 100 150 200 Volts ... Labels: FE1C |
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| 10. | 73.72 Kb • 6 Pages |
Abstract: ... When the EEPRTCT bit of the EENVR1 (address $FE1C) register is programmed to 0, EEPROM protection is enabled for the EEPROM1 located at $0800 to $09FF. This means that the software cannot program ... Labels: FE1C |
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