500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

F 407 Diode

Catalog Datasheet MFG & Type PDF Document Tags

F 407 Diode

Abstract: 4176 diode Polarity Housing (grounj : F-980. : 98Q. cm -1. Special Conditions : F-980-GMP-BC. Operator Serial Number Date Huber. 407-HV-1-95. 09/Jun/2004 Max Max Operationtemp / K : 90., Diode Current cw / mA : 975. Record of Laser No. 407-HV-1-95 Date : 09/Jun/2004 , 0.22 80 82 84 86 Definition ; maximum total power : the power which the laser diode radiates at , in cm-1 Operator:Huber 990 Laser: 407-HV-1-95 Temperature: 80.00 K Modal Distribution
-
OCR Scan

semikron skiip 1242 gb 120

Abstract: F 407 Diode fsm A A A kA2s = 25 °C; tp < 1 ms tp = 10 ms; sin.; T j = 150 °C tp = 10 ms; Tj f t (Diode , 125 °C per IGBT per diode 2> O ver tem perature protection P 16/360 F; v air = 279 m3 / h - - , SEMIKRON SKiiP 1242 GB 120 - 407 CTV Absolute Maximum Ratings Sym bol |c o n d itio n s 1 > Values 1200 Units IGBT & Inverse Diode V cES V c c 9> lc T j 3> V isol 4> V V O perating DC , integrated intelligent Power PACK halfbridge SKiiP 1242 GB 120 + Driver 407 CTV 713) Prelim inary Data Case
-
OCR Scan

semikron skiip 1242 gb 120

Abstract: SKiiP 1242 GB 120 . 407 CTV f If = 1200 A;Ti =125 °C Eon + Eoff IGBT / Inverse Diode 2) Tj = 125 X V to Ti = 125 °C rr Thermal Characteristics per IGBT Rthjh per diode Rthjh Over temperature protection V 2> P16/360 F ;vair = 279 m3 /h Rthha , s e M IK R O n SKiiP 1242 GB 120 - 407 CTV Absolute Maximum Ratings Symbol V c es , IQBT & Inverse Diode V c c 9) lc T i3) Viso!41 If I fm I fsm A (Diode) Operating DC link voltage Theatsink -2 5 °C IGBT & Diode AC, 1 min. Theatsink -2 5 °C Theaisink ~ 2 5 °C; tp < 1 ms tp = 10 ms; sin
-
OCR Scan
semikron skiip 1242 gb 120 SKiiP 1242 GB 120 . 407 CTV N 407 Diode F 407 Diode SKIIP DRIVER 1242

semikron skiip 1242 gb 120

Abstract: F 407 Diode SKiiP 1242 GB 120 - 407 CTV Absolute Maximum Ratings Symbol Conditions 1) IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min , I2t (Diode) tp = 10 ms; Tj = 150 °C Values Units 1200 900 1200 ­ 40 . + 150 3000 5 , PACK halfbridge SKiiP 1242 GB 120 + Driver 407 CTV 7,13) Preliminary Data Case S4 , V ­ 360/588 Eon + Eoff Inverse Diode 2) VF = VEC IF = 900 A Tj = 25 (125) °C ­ 1,9(1,8
SEMIKRON
Original
semikron 1242 gb 120 SKIIP CASE S4 skiip gb 120 SKIIPPACK 1242gb semikron skiip 1242

F 407 Diode

Abstract: DIODE FS 607 406 X 2" 2 5 207 3 307 4 407 5 507 XUF "C 607 "K F 37 , Vl"."Vuvi Reverse diode dv/dt 7) dv/dt KF?506."VDD?72X Cxcncpejg"gpgti , fx1fv Wpkv 72 X1pu Xcnwgu Wpkv V DS"?"6:2"X."K F , / / 407 Vjgtocn"tgukuvcpeg."lwpevkqp"/"ecug."HwnnRCM TvjLEaHR / / 6 , Transconductance g fs V DS≥4,K F,TFU*qp+ocz." v{r0 ocz0 / 606 / U rH KF?40:C Input
-
Original
DIODE FS 607 URD26P82E5 RG/VQ485 S89262/U6629 26P82E5

DD 607 B

Abstract: F 407 Diode {."tgrgvkvkxg"vCT"nkokvgf"d{"Tjmax3+ EAR 206 oL K F"?"506"C."VDD"?"72"X K F , Qrgtcvkpi"cpf"uvqtcig"vgorgtcvwtg V l"."V uvi /77000"-372 ̇E Reverse diode dv/dt 5) dv/dt Rev. 2.1 Pcig , Ftckp"Uqwteg"xqnvcig"unqrg Xcnwg fx1fv Wpkv 72 X1pu Xcnwgu Wpkv V DS"?"6:2"X."K F , / / 407 Vjgtocn"tgukuvcpeg."lwpevkqp"/"codkgpv."ngcfgf" RthJA / / 97 , "?"47"̇E."wpnguu"qvjgtykug"urgekhkgf Rctcogvgt U{odqn Eqpfkvkqpu Xcnwgu Wpkv okp0 Transconductance g fs V DS≥4,K F,TFU
Infineon Technologies
Original
DD 607 B URS26P82E5 RG/VQ473-3-11 RG/VQ471-3-11 URF26P82E5 RG/VQ471/5/31 SPS04N60C3

25t120

Abstract: PS18 . 6 Typ. turn off characteristics of free wheeling diode 407 IC 50 3-4 VDI 25-12P1 , , TVJ = 125°C VCE = 600 V; IC = 17.5 A VGE = 15/0 V; RG = 82 Cies VCE = 25 V; VGE = 0 V; f = 1 , positive temperature coefficient of saturation voltage - fast switching 407 Symbol td(on) tr , the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 407 Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. 2-4
IXYS
Original
25t120 PS18 SV18 NTC 279 T 200 25T120
Abstract: . 4 0 ns MHz 1 2 2 ( ^ 1 6) V 0 0 1 { s l0 ) f t A . 35 pF . 900±20nm 40 nm DESCRIPTION The SFH 407 GaAs diode emits radiation in the near infrared range. The radiation emitted is excited by current flowing in the forward direc tion and can be modulated. This diode is partic ularly noted for its high , SIEMENS AKTIENG ESE LLSCHAF 47E S ô23StiQ5 0057377 1 « S I E G S IE M E N S SFH 407 , · TO-46 Package · F la t Epoxy C oating · 0.1" (2.54 m m ) Lead S pacing · F or Fiber O p tic C om m -
OCR Scan

FL 1173

Abstract: n 407 diode Technology, Inc., 2525 Shader Road, P.O. Box 547859, Orlando, FL 32854-7859 PH (407) 298-2000 / FAX (407 , . These assemblies incorporate GaAs MMIC switches or pin diode switches. The choice of components is , 50. 105 7* 0 MHz A f J CENTER SO. OOS 750 MHz SPAN . 050 OOO MHz LC Bandpass Embedded , PH (407) 298-2000 / FAX (407) 293-2979 125 Ht LC FILTERS Design Methods PTI utilizes custom , Shader Road, P.O. Box 547859, Orlando, FL 32854-7859 PH (407) 298-2000 / FAX (407) 293-2979 n &LC
-
OCR Scan
FL 1173

Diode 6a8

Abstract: 6A8 RECTIFIER DIODE SKiiP 39AC126V2 power semiconductor power electronics igbt bridge rectifier diode thyristor cib , . < (. > *. ### ? 4'. Units , , 2 2 2 , Diode - Inverter MiniSKiiP 3 3-phase bridge , ) 1 (' 20 ! min. ' typ. 407 6(8 '09 4 6.0B8 ' 670B8 440( 40B 40' .0& 9. *. '. 4. 4B0B 470( max. (04 6(0*8 %0' 40( 64048 %0* 6B0&8 Units , , , -C E@/ -F -F Features , ) ) ! " # $%&'&( Diode - Inverter , 1 ,$ ,6A8 6=>8 : G $ - 1
SEMIKRON
Original
Diode 6a8 6A8 RECTIFIER DIODE

F 407 Diode

Abstract: free wheeling diode 407 IC 50 3-4 VDI 25-12P1 VII 25-12P1 VID 25-12P1 VIO 25-12P1 6 , = 0 V; f = 1 MHz RthJC RthJH IXYS reserves the right to change limits, test conditions and , 407 Symbol td(on) tr td(off) tf Eon Eoff B3 IK10 LN X16 T16 NTC K10 S , IXYS All rights reserved 407 Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. 2-4 VDI 25-12P1 VII 25-12P1 VID 25-12P1 VIO 25-12P1 50 VGE = 17V
IXYS
Original

SFH 910

Abstract: NT 407 F SFH 407-3,1.0 to 2.0 mW/sr DESCRIPTION The SFH 407 GaAs diode emits radiation in the near infrared , . This diode is particularly noted for its high radiation ability The SFH 407 is mounted in a TO-46 metal , SIEMENS AKTIENGESELLSCHAF 47E D â  fl23St,0S 0027377 S «SIEG SIEMENS SFH 407 SERIES INFRARED , » Maximum permissible forward currant mA V-'CU) ?00 Forward currant lF = f (Vp) fâ , spectral emission ,=t(X) 0001 0.01 0.1 1 K V 8i0 660 860 900 920 910 960 Radiant intensity I. = f {U
-
OCR Scan
SFH 910 NT 407 F W225 K SFH 910 siemens SFH nm SFH 209 750K/W

7506P

Abstract: TF010 of free wheeling diode 407 42T60 0 3-4 VDI 75-06P1 VII 75-06P1 VID 75-06P1 VIO , A VGE = 15/0 V; RG = 22 Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH IXYS , switching 407 Symbol td(on) tr td(off) tf Eon Eoff B3 PS18 X15 L9 VX18 LMN , dimensions. © 2004 IXYS All rights reserved 407 Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. 2-4 VDI 75-06P1 VII 75-06P1 VID 75-06P1 VIO 75-06P1
IXYS
Original
7506P TF010 diode 407
Abstract: wheeling diode 407 42T60 0 3-4 VDI 75-06P1 VII 75-06P1 VID 75-06P1 VIO 75-06P1 10,0 mJ Eon , °C VCE = 300 V; IC = 40 A VGE = 15/0 V; RG = 22 â"¦ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC , 's - positive temperature coefficient of saturation voltage - fast switching 407 Symbol td , IXYS All rights reserved 407 Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. 2-4 VDI 75-06P1 VII 75-06P1 VID 75-06P1 VIO 75-06P1 150 IC IXYS
Original
Abstract: V D . â'¢ RIVIERA BEACH, FLORIDA 33404 TEL: (407) 848-4311 â'¢ TLX: 5 1 - 3 4 3 5 « F A X : (407 , TransVDS i 50 V Conductance (2) g f s 1DS=14A Input Capacitance Ci ss VGS=OV VDS=25 V Output CapaeItonce coss f = l .0 MHz Reverse Transfer CRSS Capac itance Turn-On Delay t d ( o n ) VDD=200V RG , indepen­ dent of operating temp.) F a l 1 Time tf Total Gate Charge (Gate-Source Plus Gate-Drai n , 140 120 99 - - 170 nC - - 28 nC - - 90 nC SOURCE-DRAIN DIODE -
OCR Scan
SDF360 MIL-S-19500

14T60

Abstract: PS18 wheeling diode 407 14T60 0 3-4 VDI 25-06P1 VII 25-06P1 VID 25-06P1 VIO 25-06P1 3 mJ , , TVJ = 125°C VCE = 300 V; IC = 15 A VGE = 15/0 V; RG = 68 Cies VCE = 25 V; VGE = 0 V; f = 1 , positive temperature coefficient of saturation voltage - fast switching 407 Symbol td(on) tr , the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 407 Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. 2-4
IXYS
Original
TF20A
Abstract: '¢ WEST PALM BEACH,FLORIDA 33407 TEL:(407) 848-4311 â'¢ TLX: 51-3435 â'¢ F A X. (407) 863-5946 600V , ) Forward TransVDS i 100 V 4.7 s(u) Conductance (2) g f S IDS-3.4A pF - 1300 Input Capacitance Cl SS VGS=OV V DS=25 V pF Output Capacitance coss 160 f=1.0 MHz Reverse Transfer PF 30 C RSS Casac , 8.3 nC - - 30 nC (CUSTOM BEND OPTIONS AVAILABLE) SOU R C E - D R A I N DIODE R A , . TYP. SYMBOL Con t inuous Modified MOSFET Source Current IS symbol showing the (Body Diode -
OCR Scan
VDD-300V A32-1

scr phase angle controller

Abstract: PAYNE Potentiometer 75K diode PIV ratings. Ambient Temperature Range: -10 to +50°C (122 F). RfflfflE ENGINEERING Rt. 29 â , in 50°C (122°F) Ambients Without Fans â'¢ Exclusive Proprietary Heatsinks â'¢ Silent. Arcless , operate at 50°C (122°F) ambient temperatures with no derating. APPLICATION FLEXIBILITY All 36D/E DC , SCRs and diodes, with free-wheel-ing diode to prevent circulating current damage to the other , (318) 12.5 (318) 16 (407) 16(407) 20 (508) 24 (610) 30 (762) 36(915) 42 (1067) 48 (1067) 48(1067) 72
-
OCR Scan
scr phase angle controller PAYNE Potentiometer 75K 36E-2-250 36D-1-10 thyristor controller schematic 36D-4-20 E-4-150

N 407 Diode

Abstract: ELECTRONICS WAY · WEST PALM BEACH.FLORIDA 33407 TEL:(407) 848-4311 · TLX: 51-3435 · FAX: (407) 863-5946 , ) Forward TransConductance (2) g f s Input Capacitance CISS Output Capacitance COSS Reverse Transfer CRSS Capac itance Turn-On Delay td(on) Rise T¡me tr Turn-Off De 1ay td(off) F a l 1 Time tf Total Gate , ns ns ns ns nC nC nC 4.7 - 1300 VGS=OV VDS=25 V - 160 f = l .0 MHz 30 VDD-300V RG- ? n ID- ? A RD , BEND CONFIGURATIONS JAB \ SOURCE-DRA IN DIODE RATINGS & CHARACT .Tc = 25* C ( ^ ¡ S|pec HERFIED J
-
OCR Scan
SDFC40

514T60

Abstract: Inductive load, TVJ = 125°C VCE = 300 V; IC = 15 A VGE = 15/0 V; RG = 68 VCE = 25 V; VGE = 0 V; f = 1 , , test conditions and dimensions. © 2004 IXYS All rights reserved 1-4 407 VDI 25-06P1 VII , g VID VDI Data according to IEC 60747 and refer to a single transistor or diode unless , IXYS All rights reserved 2-4 407 VDI 25-06P1 VII 25-06P1 VID 25-06P1 VIO 25-06P1 50 A IC 50 , characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 40 A trr 20 V VGE 15 120
IXYS
Original
514T60
Showing first 20 results.