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Electron Research

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Abstract: The new Agilent 8500 FE-SEM offers researchers a field emission scanning electron microscope , without constant re-tuning â'¢ Compact size enables easy installation in any research laboratory and , scanning electron microscope is the electron beam column, which extracts, collimates, shapes, scans, and focuses the electron beam. A conventional electron beam column relies on a combination of precisionmachined electromagnetic and electrostatic elements to control the electron beam. The coils that form Agilent Technologies
Abstract: exponential and research is already delving deeper into submicron technologies. The turnaround time between , RESEARCH In parallel with function integration, package technology has been progressing. Packages with , technological development and to offer leading edge products, SGS-THOMSON invests significantly in Research , industry, particularly for highrisk and costly advanced research programs. DESIGN FOR TESTABILITY Using , (MEDEA), a pan-European program of advanced research and development, designed to ensure Europe STMicroelectronics
hot electron devices SGS-Thomson ball grid array VLSI Vision
Abstract: fields such as chemical analysis, medical diagnosis, scientific research and industrial measurement , changes in the electronic state of the substance (electron transition) or induces characteristic , annihilates with an electron, two gamma-ray photons of 511 keV are emitted in opposite directions. These , been chiefly used in research and study on brain functions and other organ mechanisms. Currently, PET , such as animal experiments for research that cannot be easily done with humans, as well as for Hamamatsu
Abstract: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 809 An Analytical Model for , electron injection-induced gate current during programming. Based on full transient simulation of the , Integrated Nanosystems Research Facility, Department of Electrical and Computer Engineering, University of , . Hot electron injection into the select gate channel was analyzed the same way as programming in the , from IEEE Xplore. Restrictions apply. 810 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3 -
igfet sonos SST superflash Dual-Gate Mosfet electric field DSASW0037374
Abstract: '' This power supply was developed for use in high speed electron beam accelerator. It can be used to , The figures and wave patterns are from the Institute of Physical and Chemical Research ã"ã'Œã¾ã§ã®å®ç¸¾ The present results å­¦è¡" For academic research ç "究ç"¨ 医ç™'ç"¨ For medical , 出å¸ï¼šç'¬ç«'行æ"¿æ³•äºº çåŒå­¦ç "究æ‰'â'ƒ The SACLA XFEL X-ray free electron laser) facility ï¼ ï¼Source , Chemical Research RIKEN) ï¼ ã'å™ç右 On rightã'' è¶é«˜ç²¾åº¦é«˜é›»å§å電器 ï¼ã Nichicon
Abstract: ACKNOWLEDGMENT REFERENCES SuperFlash cell based on field enhancing electron injector uses a relatively thick , using polyto-poly Fowler-Nordheim (F-N) tunneling for erase and source-side channel hot electron , degradation under program/erase cycling is electron trapping in tunnel oxide near floating gate injector during erase. Electron trapping occurs on existing traps and traps For quantitative characterization , the tunneling current varies with time during erase and the total electron charge transferred from -
Angstrem 0.18-um CMOS Flash technology 1117 FG Hebrew material science and technology
Abstract: .201004340 Investigation of electron delay www.pss-rapid.com in the base on noise performance in InGaP heterojunction , good agreement with the HICUM L2 compact model [M. Schroter, IEICE Trans. Electron. E88-C, 1098 (2005 , place mainly in the base and the base/collector (B/C) region where the electron transport is also , quasi-ballistic electron transport. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim solidi status physica 336 rrl A. Shimukovitch et al.: Investigation of electron delay in base on noise -
Abstract: presented. Single electron tunneling events have been detected, using regular flash memory cell. A physical , Fowler-Nordheim (F-N) Electron Injection from field-enhancing FG-injector through tunneling oxide during ERASE and Source-Side Channel Hot Electron Injection during PROGRAM [2,3]. TABLE OF CONTENTS 1. 2 , Tunneling 2.3. Reverse Tunneling 2.4. Tunneling Model for FG Injector 2.5. Single Electron Event , of electron tunneling injection from FG. When tunneling conditions are reached, a corresponding -
tunnel diodes 1E-18 ed 39 injector tunnel detector
Abstract: research. Structure and principle PHOTOCATHODE (PHOTONS ELECTRONS) MCP(ELECTRON MULTIPLICATION , Photon is our business Electron Tube Products Condensed Catalog HAMAMATSU PHOTONICS K.K , , chemical analysis, measurement, industrial instrumentation, and academic research As a world leader in photonics technology, Hamamatsu Photonics is constantly researching light in all its forms. The Electron , research as well as in medical applications such as blood analysis and diagnostic imaging. Based on this Hamamatsu Photonics
xenon linear flash lamps Lamps FLASH TUBE xenon Solar Garden Light Controller 4 pin deuterium lamp circuit C9744 C8855-01 NL-1305 SE-171 RU-127015 B-1348 E-08290
Abstract: in electron multiplication technology, is continuously engaged in research and development and in , Technologies Burle is recognized as a worldwide leader in electron multiplication technology with its , family of electron multipliers. These advanced products satisfy the demanding detection needs of the scientific and research community, focusing on mass spectrometry, surface analysis, and space sciences , manufacturer of microchannel plate detector assemblies and channel electron multipliers, perfected the MCP Burle Industries
BURLE Security Products TP182 long range metal detector GIOTTO microchannel plate scientific imaging technologies inc TP182/DEC99
Abstract: Intel Technology Briefing Dr. Robert Chau Principal Engineer, Novel Transistor Research Technology and Manufacturing Group Hillsboro, Oregon Dr. Gerald Marcyk Director, Components Research , research achievement l Demonstration of world's smallest and fastest CMOS transistors l Demonstrates no , Consortia ­ Internal Research ­ Development ­ High Volume Manufacturing ® 5 Manufacturing , leads in production and research LG = 30 nm 70nm World's highest performance transistor in Intel
evolution of intel microprocessor 2X transistor World transistors cmos transistor 0.35 um P852 P1262
Abstract: Electron Tube Products Condensed Catalog HAMAMATSU PHOTONICS K.K. Development and production , instrumentation, and academic research As a world leader in photonics technology, Hamamatsu Photonics is constantly researching light in all its forms. The Electron Tube Division of Hamamatsu Photonics supports , , semiconductors, biotechnology and experimental scientific research as well as in medical applications such as , introduces major products available from the Electron Tube Division of Hamamatsu Photonics. For further Hamamatsu
500/250/arc xenon flash lamps D-82211
Abstract: Research and Philips Semiconductors respectively for their support of the project and W. Krans and W , current densities," I.R.E. Trans. Electron Devices, vol. ED-9, p. 164, 1962. . [2] J. Reynolds, "Nonlinear distortions and their cancellation in transistors," IEEE Trans. Electron Devices, no. ED-11, pp , ," IEEE Trans. Electron Devices, vol. ED-16, p. 654, 1969. [7] D. L. Bowler and F. A. Lindholm, "High current regimes in transistor collector regions," IEEE Trans. Electron Devices, vol. ED-20, p. 257 -
OCR Scan
Abstract: Electronics Technology - http://www.ett.bme.hu/ Electron Devices - http://www.eet.bme.hu/new , at the Department of Electron Devices. The operation of this device is based on the , , juhasz@eet.bme.hu Department: Electron Devices Availability (number of students): max. 3 students (BSc or MSc , , gaertner@eet.bme.hu Department: Electron Devices 2014/2015 Faculty of Electrical Engineering and Informatics , : QB321, hosszu@eet.bme.hu Department: Department of Electron Devices Availability (number of students -
Abstract: progress has been made in the past decade on the research of off-state breakdown [1] and the strategy to , are not taken into consideration during previous research. The main difficulty that the power , ionization has started for a while. II. MODELING PROCESS Previous research [3] studying the , uneven distribution of lateral electric field and electron concentration. The voltage dropped in this , bias. Figure 1: The distribution of lateral electric field and electron concentration along the -
Abstract: BELL SYSTEM PRACTICES AB^6A37A Transmission Engineering and Data Issue 1, October 1955 Electron Tube Data A.T.&T. Co. Standard ELECTRON TUBE DATA SHEET WESTERN ELECTRIC 437A ELECTRON TUBE ^Ã'ttaia iff DESCRIPTION The ^37A electron tube is a high figure of merit triode with an indirectly heated cathode. It was designed primarily for the output amplifier of the L-3 tandem two stage amplifier , Laboratories, the research laboratories of the African Telephone and Telegraph Company and the Western Electric -
OCR Scan
U6000 437a 437A tube Western Electric T-2736
Abstract: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H , . This work was supported by Office of Naval Research Contract N0001405-C-0203 under contract monitor Dr , ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 require at least an active area of 0.133 cm2 , and when , IEEE Xplore. Restrictions apply. 1810 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8 , ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 Fig. 12. Measured subthreshold swing and threshold voltage GeneSiC Semiconductor
westinghouse transistors
Abstract: BELL SYSTEM PRACTICES Transmission Engineering and Data Electron Tabe Data AB46AI8A Issue 1 April 1956 A.T.&T. Co. Standard ELECTRON TUBE DATA SHEET off,â"¢.^, OFFICIAL FILE COPY WESTERN ELECTRIC 4I8A ELECTRON TUBE DESCRIPTION The 4l8A electron tube is an indirectly heated cathode type tetrode. This tube was designed primarily for use as a power output tube in broad-band video and , INTERNAL SHIELDS A development of Bell Telephone Laboratories, the research laboratories of the American -
OCR Scan
U-2400-03 u24000 265OO T-2740
Abstract: MEASUREMENT RESULTS Pseudomorphic AlGaAs/InGaAs common-source HEMTs are used in this research. The , fingers in parallel at all. Please note that, although previous research [2] reveals a non-constant , (10) can be validated by a previous research on the impact of current crowding on insertion loss [5 , , T.Vu. P.Roberts, and M.Helix, â'Source, drain and gate series resistances and electron saturation velocity in ionimplanted GaAs FETâ'™s,â' IEEE Trans. Electron Devices, vol. ED-32, pp. 987-992, May 1985 Skyworks Solutions
Abstract: . Satellites have been around, of course. Defense, research, and geosynchronous communication satellites have , As research over the past 20 years has shown, almost all IC more than triples to over 100 krad(Si). , protons with sufficient Adding electron traps to offset the hole traps is another energy to penetrate , electrons have energies of up to about 7 MeV. trapped, caught in the added electron traps, keeping the field , electron component of the total dose radiation, they are much less effective in lessening the proton Aeroflex
GLOBALSTAR microprocessor radiation hard datasheet van allen belt APPLIED SOLAR ENERGY free mobile trapping
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