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TPS3702CX18DDCR Texas Instruments High-Accuracy, Fixed-Threshold OV/UV Monitor 6-SOT-23-THIN -40 to 125
TMX320LF2407APGE Texas Instruments 16-bit fixed point DSP with Flash 144-LQFP
SN74S157N3 Texas Instruments Quadruple 2-Line To 1-Line Data Selectors/Multiplexers 16-PDIP 0 to 70
SN65HVD1471DR Texas Instruments 3.3V, Full-Duplex RS-485, 16kV IEC ESD, 400kbps data rate, No Enables 8-SOIC -40 to 125
BQ4830YMA-85 Texas Instruments 0 TIMER(S), REAL TIME CLOCK, PDIP28
LMH6629 MDC Texas Instruments Ultra-Low Noise, High-Speed Operational Amplifier with Shutdown 0-DIESALE -40 to 85

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Electron Research

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: The new Agilent 8500 FE-SEM offers researchers a field emission scanning electron microscope , without constant re-tuning â'¢ Compact size enables easy installation in any research laboratory and , scanning electron microscope is the electron beam column, which extracts, collimates, shapes, scans, and focuses the electron beam. A conventional electron beam column relies on a combination of precisionmachined electromagnetic and electrostatic elements to control the electron beam. The coils that form Agilent Technologies
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5990-6183EN
Abstract: exponential and research is already delving deeper into submicron technologies. The turnaround time between , RESEARCH In parallel with function integration, package technology has been progressing. Packages with , technological development and to offer leading edge products, SGS-THOMSON invests significantly in Research , industry, particularly for highrisk and costly advanced research programs. DESIGN FOR TESTABILITY Using , (MEDEA), a pan-European program of advanced research and development, designed to ensure Europe STMicroelectronics
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hot electron devices SGS-Thomson ball grid array VLSI Vision
Abstract: fields such as chemical analysis, medical diagnosis, scientific research and industrial measurement , changes in the electronic state of the substance (electron transition) or induces characteristic , annihilates with an electron, two gamma-ray photons of 511 keV are emitted in opposite directions. These , been chiefly used in research and study on brain functions and other organ mechanisms. Currently, PET , such as animal experiments for research that cannot be easily done with humans, as well as for Hamamatsu
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Abstract: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 809 An Analytical Model for , electron injection-induced gate current during programming. Based on full transient simulation of the , Integrated Nanosystems Research Facility, Department of Electrical and Computer Engineering, University of , . Hot electron injection into the select gate channel was analyzed the same way as programming in the , from IEEE Xplore. Restrictions apply. 810 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3 -
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igfet sonos SST superflash Dual-Gate Mosfet electric field DSASW0037374
Abstract: '' This power supply was developed for use in high speed electron beam accelerator. It can be used to , The figures and wave patterns are from the Institute of Physical and Chemical Research ã"ã'Œã¾ã§ã®å®ç¸¾ The present results å­¦è¡" For academic research ç "究ç"¨ 医ç™'ç"¨ For medical , 出å¸ï¼šç'¬ç«'行æ"¿æ³•äºº çåŒå­¦ç "究æ‰'â'ƒ The SACLA XFEL X-ray free electron laser) facility ï¼ ï¼Source , Chemical Research RIKEN) ï¼ ã'å™ç右 On rightã'' è¶é«˜ç²¾åº¦é«˜é›»å§å電器 ï¼ã Nichicon
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Abstract: ACKNOWLEDGMENT REFERENCES SuperFlash cell based on field enhancing electron injector uses a relatively thick , using polyto-poly Fowler-Nordheim (F-N) tunneling for erase and source-side channel hot electron , degradation under program/erase cycling is electron trapping in tunnel oxide near floating gate injector during erase. Electron trapping occurs on existing traps and traps For quantitative characterization , the tunneling current varies with time during erase and the total electron charge transferred from -
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Angstrem 0.18-um CMOS Flash technology 1117 FG Hebrew material science and technology
Abstract: .201004340 Investigation of electron delay www.pss-rapid.com in the base on noise performance in InGaP heterojunction , good agreement with the HICUM L2 compact model [M. Schroter, IEICE Trans. Electron. E88-C, 1098 (2005 , place mainly in the base and the base/collector (B/C) region where the electron transport is also , quasi-ballistic electron transport. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim solidi status physica 336 rrl A. Shimukovitch et al.: Investigation of electron delay in base on noise -
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Abstract: presented. Single electron tunneling events have been detected, using regular flash memory cell. A physical , Fowler-Nordheim (F-N) Electron Injection from field-enhancing FG-injector through tunneling oxide during ERASE and Source-Side Channel Hot Electron Injection during PROGRAM [2,3]. TABLE OF CONTENTS 1. 2 , Tunneling 2.3. Reverse Tunneling 2.4. Tunneling Model for FG Injector 2.5. Single Electron Event , of electron tunneling injection from FG. When tunneling conditions are reached, a corresponding -
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tunnel diodes 1E-18 ed 39 injector tunnel detector
Abstract: research. Structure and principle PHOTOCATHODE (PHOTONS ELECTRONS) MCP(ELECTRON MULTIPLICATION , Photon is our business Electron Tube Products Condensed Catalog HAMAMATSU PHOTONICS K.K , , chemical analysis, measurement, industrial instrumentation, and academic research As a world leader in photonics technology, Hamamatsu Photonics is constantly researching light in all its forms. The Electron , research as well as in medical applications such as blood analysis and diagnostic imaging. Based on this Hamamatsu Photonics
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xenon linear flash lamps Lamps FLASH TUBE xenon Solar Garden Light Controller 4 pin deuterium lamp circuit C9744 C8855-01 NL-1305 SE-171 RU-127015 B-1348 E-08290
Abstract: in electron multiplication technology, is continuously engaged in research and development and in , Technologies Burle is recognized as a worldwide leader in electron multiplication technology with its , family of electron multipliers. These advanced products satisfy the demanding detection needs of the scientific and research community, focusing on mass spectrometry, surface analysis, and space sciences , manufacturer of microchannel plate detector assemblies and channel electron multipliers, perfected the MCP Burle Industries
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BURLE Security Products TP182 long range metal detector GIOTTO microchannel plate scientific imaging technologies inc TP182/DEC99
Abstract: Intel Technology Briefing Dr. Robert Chau Principal Engineer, Novel Transistor Research Technology and Manufacturing Group Hillsboro, Oregon Dr. Gerald Marcyk Director, Components Research , research achievement l Demonstration of world's smallest and fastest CMOS transistors l Demonstrates no , Consortia ­ Internal Research ­ Development ­ High Volume Manufacturing ® 5 Manufacturing , leads in production and research LG = 30 nm 70nm World's highest performance transistor in Intel
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evolution of intel microprocessor 2X transistor World transistors cmos transistor 0.35 um P852 P1262
Abstract: Electron Tube Products Condensed Catalog HAMAMATSU PHOTONICS K.K. Development and production , instrumentation, and academic research As a world leader in photonics technology, Hamamatsu Photonics is constantly researching light in all its forms. The Electron Tube Division of Hamamatsu Photonics supports , , semiconductors, biotechnology and experimental scientific research as well as in medical applications such as , introduces major products available from the Electron Tube Division of Hamamatsu Photonics. For further Hamamatsu
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D-82211
Abstract: Research and Philips Semiconductors respectively for their support of the project and W. Krans and W , current densities," I.R.E. Trans. Electron Devices, vol. ED-9, p. 164, 1962. . [2] J. Reynolds, "Nonlinear distortions and their cancellation in transistors," IEEE Trans. Electron Devices, no. ED-11, pp , ," IEEE Trans. Electron Devices, vol. ED-16, p. 654, 1969. [7] D. L. Bowler and F. A. Lindholm, "High current regimes in transistor collector regions," IEEE Trans. Electron Devices, vol. ED-20, p. 257 -
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TRANSISTOR SUBSTITUTION 1993 volterra VOLTERRA VT c1e2 hp8566A TRANSISTOR SUBSTITUTION
Abstract: Electronics Technology - http://www.ett.bme.hu/ Electron Devices - http://www.eet.bme.hu/new , at the Department of Electron Devices. The operation of this device is based on the , , juhasz@eet.bme.hu Department: Electron Devices Availability (number of students): max. 3 students (BSc or MSc , , gaertner@eet.bme.hu Department: Electron Devices 2014/2015 Faculty of Electrical Engineering and Informatics , : QB321, hosszu@eet.bme.hu Department: Department of Electron Devices Availability (number of students -
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Abstract: progress has been made in the past decade on the research of off-state breakdown [1] and the strategy to , are not taken into consideration during previous research. The main difficulty that the power , ionization has started for a while. II. MODELING PROCESS Previous research [3] studying the , uneven distribution of lateral electric field and electron concentration. The voltage dropped in this , bias. Figure 1: The distribution of lateral electric field and electron concentration along the -
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Abstract: BELL SYSTEM PRACTICES AB^6A37A Transmission Engineering and Data Issue 1, October 1955 Electron Tube Data A.T.&T. Co. Standard ELECTRON TUBE DATA SHEET WESTERN ELECTRIC 437A ELECTRON TUBE ^Ã'ttaia iff DESCRIPTION The ^37A electron tube is a high figure of merit triode with an indirectly heated cathode. It was designed primarily for the output amplifier of the L-3 tandem two stage amplifier , Laboratories, the research laboratories of the African Telephone and Telegraph Company and the Western Electric -
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U6000 437a 437A tube Western Electric T-2736
Abstract: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H , . This work was supported by Office of Naval Research Contract N0001405-C-0203 under contract monitor Dr , ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 require at least an active area of 0.133 cm2 , and when , IEEE Xplore. Restrictions apply. 1810 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8 , ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 Fig. 12. Measured subthreshold swing and threshold voltage GeneSiC Semiconductor
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westinghouse transistors
Abstract: BELL SYSTEM PRACTICES Transmission Engineering and Data Electron Tabe Data AB46AI8A Issue 1 April 1956 A.T.&T. Co. Standard ELECTRON TUBE DATA SHEET off,â"¢.^, OFFICIAL FILE COPY WESTERN ELECTRIC 4I8A ELECTRON TUBE DESCRIPTION The 4l8A electron tube is an indirectly heated cathode type tetrode. This tube was designed primarily for use as a power output tube in broad-band video and , INTERNAL SHIELDS A development of Bell Telephone Laboratories, the research laboratories of the American -
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U-2400-03 u24000 265OO T-2740
Abstract: MEASUREMENT RESULTS Pseudomorphic AlGaAs/InGaAs common-source HEMTs are used in this research. The , fingers in parallel at all. Please note that, although previous research [2] reveals a non-constant , (10) can be validated by a previous research on the impact of current crowding on insertion loss [5 , , T.Vu. P.Roberts, and M.Helix, â'Source, drain and gate series resistances and electron saturation velocity in ionimplanted GaAs FETâ'™s,â' IEEE Trans. Electron Devices, vol. ED-32, pp. 987-992, May 1985 Skyworks Solutions
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ED-34
Abstract: . Satellites have been around, of course. Defense, research, and geosynchronous communication satellites have , As research over the past 20 years has shown, almost all IC more than triples to over 100 krad(Si). , protons with sufficient Adding electron traps to offset the hole traps is another energy to penetrate , electrons have energies of up to about 7 MeV. trapped, caught in the added electron traps, keeping the field , electron component of the total dose radiation, they are much less effective in lessening the proton Aeroflex
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GLOBALSTAR microprocessor radiation hard datasheet van allen belt APPLIED SOLAR ENERGY free mobile trapping
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