NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Intel Technology Briefing Dr. Robert Chau Principal Engineer, Novel Transistor Research Technology and Manufacturing Group Hillsboro, Oregon Dr. Gerald Marcyk Director, Components Research , research achievement l Demonstration of world's smallest and fastest CMOS transistors l Demonstrates no , Consortia Internal Research Development High Volume Manufacturing ® 5 Manufacturing , leads in production and research LG = 30 nm 70nm World's highest performance transistor in ... | Original |
16 pages, |
P854 P852 P1262 cmos transistor 0.35 um intel atom microprocessor Electron Research NEW TRANSISTOR P1264 World transistors 2X transistor evolution of intel microprocessor datasheet abstract |
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| Abstract: BELL SYSTEM PRACTICES TRANSMISSION ENGINEERING AND DATA ELECTRON TUBE DATA SECTION AB46.345A ISSUE 1, AUGUST 1948 A.T.&T. CO. STANDARD RECTIFIER FULL-WAVE, HIGH VACUUM Western Electric , Voltage (RMS) per Plate . 400 volts Maximum D-C Output Current.100 milliamperes ELECTRON , 0 20 40 60 80 100 DIRECT CURRENT OUTPUT IN MILLIAMPERES ELECTRON TUBE DATA SHEET FILE: RECTIFIER , Western Electric A development of Bel! Telephone Laboratories, the research laboratories of the American ... | OCR Scan |
4 pages, |
ELECTRON TUBE 10 Western Electric datasheet abstract |
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| Abstract: exponential and research is already delving deeper into submicron technologies. The turnaround time between , RESEARCH In parallel with function integration, package technology has been progressing. Packages with , technological development and to offer leading edge products, SGS-THOMSON invests significantly in Research , industry, particularly for highrisk and costly advanced research programs. DESIGN FOR TESTABILITY Using , (MEDEA), a pan-European program of advanced research and development, designed to ensure Europe's ... | Original |
9 pages, |
datasheet abstract |
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| Abstract: research and later served in a variety of technical and business management positions within the company's , senior vice president of research and development for the corporation. "We are extremely delighted to , American Association for the Advancement of Science. He chairs the Advisory Group on Electron Devices for , Technology, Inc.; and BEI Electronics, Inc. He also serves on the board of governors of the Research ... | Original |
2 pages, |
computer science engineering board datasheet abstract |
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| Abstract: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 809 An Analytical Model for , electron injection-induced gate current during programming. Based on full transient simulation of the , Integrated Nanosystems Research Facility, Department of Electrical and Computer Engineering, University of , Hot electron injection into the select gate channel was analyzed the same way as programming in the , from IEEE Xplore. Restrictions apply. 810 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3 ... | Original |
7 pages, |
permittivity hot electron devices electric field Dual-Gate Mosfet sonos igfet datasheet abstract |
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| Abstract: BELL SYSTEM PRACTICES AB^6A37A 6A37A Transmission Engineering and Data Issue 1, October 1955 Electron Tube Data A.T.&T. Co. Standard ELECTRON TUBE DATA SHEET WESTERN ELECTRIC 437A ELECTRON TUBE ^Àttaia iff DESCRIPTION The ^37A electron tube is a high figure of merit triode with an indirectly heated cathode. It was designed primarily for the output amplifier of the L-3 tandem two stage amplifier. , , the research laboratories of the African Telephone and Telegraph Company and the Western Electric ... | OCR Scan |
4 pages, |
Western Electric U6000 437A tube 6A37A 6A37A abstract |
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| Abstract: BELL SYSTEM PRACTICES Transmission Engineering and Data Electron Tabe Data AB46AI8A AB46AI8A Issue 1 April 1956 A.T.&T. Co. Standard ELECTRON TUBE DATA SHEET off,™.^, OFFICIAL FILE COPY WESTERN ELECTRIC 4I8A ELECTRON TUBE DESCRIPTION The 4l8A electron tube is an indirectly heated cathode type tetrode. This tube was designed primarily for use as a power output tube in broad-band video and intermediate-frequency , Laboratories, the research laboratories of the American Telephone and Telegraph Company and the Western ... | OCR Scan |
4 pages, |
Western Electric AB46AI8A AB46AI8A abstract |
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| Abstract: PROTON AND ELECTRON RADIATION ANALYSIS OF GaInP2/GaAs SOLAR CELLS P. R. Sharps, C. H. Thang, P. A. Martin, and H. Q. Hou EMCORE Photovoltaics 10420 Research Road SE Albuquerque, NM 87112 ABSTRACT Electron and proton radiation damage analysis of solar cells is extremely important for predicting the , performance predictions for new photovoltaic devices. In this paper we present electron and proton radiation , protons). The proton damage is converted to an equivalent 1 MeV electron damage. An equivalent 1 MeV ... | Original |
4 pages, |
tunnel diode tunnel diode GaAs NIEL Emcore solar cell proton multi-junction "solar cell" GaAs tunnel diode datasheet abstract |
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| Abstract: . Average Life . 4 10000 165 volts 40 milliamperes 10 hours ELECTRON TUBE DATA SHEET FILE , ELECTRON TUBE DATA SHEET FILE: COLD CATHODE SECTION 5-49 405A - PAGE 4 Western Electric A development of Bell Telephone Laboratories, the research laboratories of the American Telephone and Telegraph Company ... | OCR Scan |
4 pages, |
405a Western Electric cold cathode datasheet abstract |
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| Abstract: in electron multiplication technology, is continuously engaged in research and development and in , Technologies Burle is recognized as a worldwide leader in electron multiplication technology with its , family of electron multipliers. These advanced products satisfy the demanding detection needs of the scientific and research community, focusing on mass spectrometry, surface analysis, and space sciences. , manufacturer of microchannel plate detector assemblies and channel electron multipliers, perfected the MCP ... | Original |
11 pages, |
scientific imaging technologies inc microchannel plate GIOTTO BURLE Security Products TP182 datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Manufacturing Initiative (NEMI) Joint Electron Device Engineering Council (JEDEC) Global EIAJ U.S. Focus Groups Semiconductor Research Corp. (SRC) Packaging | Lead www.datasheetarchive.com/files/national/htm/nsc00905.htm |
National | 01/11/2002 | 10.3 Kb | HTM | nsc00905.htm |
| ) Joint Electron Device Engineering Council (JEDEC) Global Environmental Coordination .S. Focus Groups Semiconductor Research Corp. (SRC) Packaging | Lead-Free Status www.datasheetarchive.com/files/national/lf_consortia.html |
National | 25/09/2003 | 5.74 Kb | HTML | lf_consortia.html |
| Electron-Beam Addressable Memory EBCDIC Extended Binary-Coded Decimal Interchange Code EBM Electron Beam Machine EBN Electronic Buyers' News EBR Electron Beam Recorder EC Support System EPU Events Per Unit Time EQ Equal To ERADCOM Electronic Research Exploratory Research Program ERU Ejector Release Unit (Bomb) " Emergency Response Unit ES Enterprise Systems Business ESC Escape ESCA Electron Spectroscopy for Chemical Analysis ESD www.datasheetarchive.com/files/texas-instruments/sc/docs/military/milprdov/e.txt |
Texas Instruments | 07/11/1996 | 9.44 Kb | TXT | e.txt |
| for DSP development TI announces $25M college research fund focused on DSP research Mixed-Signal and Analog Another step toward all-digital High-speed, light floating-gate technology incorporated in the TC281 TC281 TC281 TC281 gives it a low 10-to-20 electron noise floor at www.datasheetarchive.com/files/texas-instruments/data/sc/docs/integrat/97oct/brief7.htm |
Texas Instruments | 08/02/1999 | 9.15 Kb | HTM | brief7.htm |
| R Range " Reset R&D Research & Development R&DSD Radar Operating Area RC Remote Control " Research Center " Resistor Received Data Enable " Research Development & Engineering RDF Rapid Deployment Forces & Tracking RDT&E Research, Development, Test, and Evaluation RDTC Remote Data Terminal Requirements Specification (System) RES Research Existing Software RESC Resources System RESP www.datasheetarchive.com/files/texas-instruments/sc/docs/military/milprdov/r.txt |
Texas Instruments | 07/11/1996 | 6.9 Kb | TXT | r.txt |
| , and W. Wang, IEEE Electron Device Letter , 1997, p. 209. [6 .Yan, IEEE Electron Device , 1997, p. 104. [7] S . [21] J.B. Jacobs and D. Antoniadis, IEEE Transactions Electron Devices , 1995, p .J. Anderson, R.H. Dennard, J.Y.C. Sun, M.R. Polcari, and B. Davari, IBM Journal Research Development www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_3i-v1.htm |
Intel | 02/02/1999 | 9.01 Kb | HTM | art_3i-v1.htm |
| , and W. Wang, IEEE Electron Device Letter , 1997, p. 209. [6 .Yan, IEEE Electron Device , 1997, p. 104. [7] S . [21] J.B. Jacobs and D. Antoniadis, IEEE Transactions Electron Devices , 1995, p .J. Anderson, R.H. Dennard, J.Y.C. Sun, M.R. Polcari, and B. Davari, IBM Journal Research Development www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_3i.htm |
Intel | 31/10/1998 | 9.01 Kb | HTM | art_3i.htm |
| . Wang, IEEE Electron Device Letter , 1997, p. 209. [6] S. A Electron Device , 1997, p. 104. [7] S. Kamiyama and T. Saeki . [21] J.B. Jacobs and D. Antoniadis, IEEE Transactions Electron Devices , 1995, p .H. Dennard, J.Y.C. Sun, M.R. Polcari, and B. Davari, IBM Journal Research Development , 1995, p. 229 www.datasheetarchive.com/files/intel/technologies/itj/q31998/articles/art_3i-v1.htm |
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| Oceanographic Research SCP System Command Processor " System Control Package SCPC Engineering Handbook SEI Software Engineering Institute SEM Scanning Electron Microscope " Serial Emulation Module " Standard Electron Module SEM-E Standard Electronic Module SRDL Semiconductor R & D Laboratories SREL Semiconductor Research and Engineering Laboratory SRI Stanford Research Institute SRP Standard Repair Procedures www.datasheetarchive.com/files/texas-instruments/sc/docs/military/milprdov/s.txt |
Texas Instruments | 07/11/1996 | 15.66 Kb | TXT | s.txt |
| floating gate transistor. This creates the fields conducive to hot-electron injection, causing an increase www.datasheetarchive.com/files/intel/techno~1/itj/q41997/articles/art_4d-v2.htm |
Intel | 31/01/1998 | 4.39 Kb | HTM | art_4d-v2.htm |