NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 55GN01S 55GN01S Ordering number : ENN7687 NPN Epitaxial Planar Silicon Transistor 55GN01S 55GN01S UHF Wide-band Low-noise Amplifier Applications Features · · · High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=10dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit 20 V Collector-to-Emitter Voltage VCBO VCEO 10 V Emitter-to-Base ... | Original |
6 pages, |
of IC 4511 IC 8898 ENN7687 55GN01S IC 4511 IC 7485 ENN7687 abstract |
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| Abstract: 55GN01S 55GN01S Ordering number : ENN7687 NPN Epitaxial Planar Silicon Transistor 55GN01S 55GN01S UHF Wide-band Low-noise Amplifier Applications Features · · · High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=10dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base ... | Original |
6 pages, |
enn7687 ic 7485 ENN7687 55GN01S ENN7687 abstract |
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