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EGP10G Datasheet

Part Manufacturer Description PDF Type
EGP10G Fagor 400 V, 1 A glass passivated avalanche ultrafast recovery rectifier Original
EGP10G Fairchild Semiconductor Fast Rectifiers (Glass Passivated) Original
EGP10G Fairchild Semiconductor 1.0 Ampere Glass Passivated High Efficiency Rectifiers Original
EGP10G Fairchild Semiconductor 1.0A Ultra Fast Recovery Rectifier Original
EGP10G Fairchild Semiconductor 1.0A Ultra Fast Recovery Rectifier; Package: DO-41; No of Pins: 2; Container: Tape & Reel Original
EGP10G General Semiconductor GLASS PASSIVATED FAST EFFICIENT RECTIFIER Original
EGP10G General Semiconductor GLASS PASSIVATED FAST EFFICIENT RECTIFIER Original
EGP10G Micro Commercial Components 1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts Original
EGP10G Taitron Components 1.0A Sintered Glass Passivated Super Fast Recovery Rectifier Original
EGP10G Taiwan Semiconductor 1.0 A Glass Passivated High Efficient Plastic Rectifier Original
EGP10G Zowie Technology SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Original
EGP10G N/A Shortform Data and Cross References (Misc Datasheets) Scan
EGP10G-E3/53 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST 1A 400V 50NS DO-41 Original
EGP10G-E3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 400V 1A DO204AL Original
EGP10G-E3/73 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 400V 1A DO204AL Original
EGP10GE-E3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 400V 1A DO204AL Original
EGP10GEHE3/54 Vishay General Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 400V 1A DO204AL Original
EGP10GEHM3/73 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST 1A 400V 50NS DO-41 Original
EGP10GE-M3/54 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST 1A 400V 50NS DO-41 Original
EGP10GE-M3/73 Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST 1A 400V 50NS DO-41 Original
Showing first 20 results.

EGP10G

Catalog Datasheet MFG & Type PDF Document Tags

egp10b

Abstract: DO-204AL EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES , EGP10C EGP10D EGP10F EGP10G UNIT Maximum repetitive peak reverse voltage VRRM 50 100 , Revision: 02-Jul-07 www.vishay.com 1 EGP10A thru EGP10G Vishay General Semiconductor ELECTRICAL , EGP10C EGP10D EGP10F EGP10G UNIT Maximum instantaneous forward voltage at 1.0 A VF , ) EGP10A EGP10B EGP10C RJA EGP10D EGP10F EGP10G 50 UNIT °C/W Note: (1) Thermal
Vishay Semiconductors
Original
DO-204AL J-STD-002B JESD22-B102D DO-41 2002/95/EC 2002/96/EC
Abstract: New Product EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast , EGP10F EGP10G UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 , EGP10G Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted , EGP10B VF EGP10C EGP10F 0.95 EGP10G 1.25 TA = 25 °C Maximum DC reverse current , (1) EGP10D EGP10F EGP10G 50 UNIT °C/W Note (1) Thermal resistance from junction Vishay Semiconductors
Original
22-B106 AEC-Q101 J-STD-002 22-B102 2011/65/EU JS709A

DO-204AL

Abstract: EGP10A EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES , unless otherwise noted) PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G , AT www.vishay.com/doc?91000 EGP10A thru EGP10G Vishay General Semiconductor ELECTRICAL , forward voltage SYMBOL 1.0 A EGP10A EGP10B VF EGP10C EGP10F 0.95 EGP10G 1.25 , EGP10A EGP10B EGP10C (1) EGP10D EGP10F EGP10G 50 UNIT °C/W Note (1) Thermal
Vishay Semiconductors
Original

diode EGP 30

Abstract: egp 100 EGP10A THRU EGP10G GLASS PASSIVATED FAST EFFICIENT RECTIFIER Forward Current - 1.0 Ampere D * Reverse Voltage - 50 to 400 Volts FEATURES P A T E N T E DO-204AL 1.0 (25.4 , EGP10A - EGP10D EGP10F & EGP10G 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 20 , EGP10G 1 10 REVERSE VOLTAGE, VOLTS 100 TRANSIENT THERMAL IMPEDANCE, °CW 100 JUNCTION , THRU EGP10G 10 1 0.1 0.01 0.1 1 t, PULSE DURATION, sec. 10 100 General
General Semiconductor
Original
diode EGP 30 egp 100 MIL-STD-750

EGP10G

Abstract: EGP10B EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES , EGP10A 50 35 50 EGP10B 100 70 100 EGP10C EGP10D EGP10F EGP10G 150 105 150 1.0 30 - 65 to + 150 200 140 , EGP10A thru EGP10G Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise , 5.0 100 50 22 15 EGP10D EGP10F EGP10G UNIT V 1.25 IR µA trr CJ ns pF THERMAL , SYMBOL RJA EGP10A EGP10B EGP10C 50 EGP10D EGP10F EGP10G UNIT °C/W ORDERING INFORMATION PREFERRED P/N
Vishay Semiconductors
Original

EGP10G

Abstract: EGP10B EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major , EGP10G 50 35 50 100 70 100 150 105 150 1.0 30 - 65 to + 150 200 140 200 300 210 300 400 280 400 Unit V V V A A °C Document Number 88582 24-Oct-05 www.vishay.com 1 EGP10A thru EGP10G Vishay , EGP10F EGP10G Unit V µA 1.25 trr CJ ns pF Thermal Characteristics TA = 25 °C unless otherwise , EGP10B EGP10C 50 EGP10D EGP10F EGP10G Unit °C/W Ratings and Characteristics Curves (TA =
Vishay General Semiconductor
Original
UL-94V-0

EGP10G

Abstract: EGP10B EGP10A thru EGP10G Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings , EGP10G 50 35 50 100 70 100 150 105 150 1.0 30 - 65 to + 150 200 140 200 300 210 300 400 280 400 Unit V V V A A °C Document Number 88582 10-Aug-05 www.vishay.com 1 EGP10A thru EGP10G Vishay , EGP10G Unit V µA 1.25 trr CJ ns pF Thermal Characteristics TA = 25 °C unless otherwise , EGP10B EGP10C 50 EGP10D EGP10F EGP10G Unit °C/W Ratings and Characteristics Curves (TA =
Vishay Semiconductors
Original

EGP10G

Abstract: DO-204AL EGP10A thru EGP10G Vishay Semiconductors formerly General Semiconductor Glass Passivated , EGP10B EGP10C EGP10D EGP10F EGP10G Parameter Unit Maximum repetitive peak reverse voltage , EGP10G Parameter Maximum instantaneous forward voltage at 1.0A 0.95 1.25 V IR 5.0 100 , Number 88582 18-Mar-02 www.vishay.com 1 EGP10A thru EGP10G Vishay Semiconductors formerly , TJ = 150°C 1 TJ = 25°C 0.1 EGP10A ­ EGP10D EGP10F ­ EGP10G 0.01 0.2 TJ = 150°C 10
Vishay Semiconductors
Original
MIL-STD750

EGP10G

Abstract: DO-204AL EGP10A thru EGP10G Glass Passivated Ultrafast Rectifier Reverse Voltage 50 to 400V Forward , otherwise specified. Symbol EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G Parameter Unit Maximum , EGP10D EGP10F EGP10G Parameter Maximum instantaneous forward voltage at 1.0A 0.95 1.25 V , /9/00 EGP10A thru EGP10G Glass Passivated Ultrafast Rectifier Ratings and Characteristic , TJ = 150°C 1 TJ = 25°C 0.1 EGP10A ­ EGP10D EGP10F ­ EGP10G 0.01 0.2 TJ = 150°C 10
General Semiconductor
Original

EGP10G

Abstract: EGP10B EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES , SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT Maximum repetitive peak , , DiodesEurope@vishay.com www.vishay.com 1 EGP10A thru EGP10G Vishay General Semiconductor ELECTRICAL , forward voltage SYMBOL 1.0 A EGP10A EGP10B VF EGP10C EGP10F 0.95 EGP10G 1.25 , EGP10A EGP10B EGP10C (1) EGP10D EGP10F EGP10G 50 UNIT °C/W Note (1) Thermal
Vishay Semiconductors
Original

EGP10G

Abstract: DO-204AL EGP10A thru EGP10G Vishay Semiconductors formerly General Semiconductor Glass Passivated , EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G Parameter Unit Maximum repetitive peak reverse voltage , EGP10G Parameter Maximum instantaneous forward voltage at 1.0A 0.95 1.25 V IR 5.0 100 , Number 88582 18-Mar-02 www.vishay.com 1 EGP10A thru EGP10G Vishay Semiconductors formerly , TJ = 150°C 1 TJ = 25°C 0.1 EGP10A ­ EGP10D EGP10F ­ EGP10G 0.01 0.2 TJ = 150°C 10
Vishay Semiconductors
Original

EGP10G

Abstract: DO-204AL EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES , PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT Maximum , www.vishay.com 1 EGP10A thru EGP10G Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C , EGP10D 0.95 EGP10F EGP10G 1.25 UNIT V TA = 25 °C TA = 125 °C IR 5.0 100 µA , RJA EGP10D EGP10F EGP10G 50 UNIT °C/W Note: (1) Thermal resistance from junction
Vishay Semiconductors
Original
JESD22-B102
Abstract: EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor , EGP10G UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 , ?91000 EGP10A, EGP10B, EGP10C, EGP10D, EGP10F, EGP10G www.vishay.com Vishay General Semiconductor , EGP10A EGP10B VF EGP10C EGP10D EGP10F 0.95 EGP10G 1.25 TA = 25 °C UNIT V , EGP10B EGP10C RJA (1) Typical thermal resistance EGP10D EGP10F EGP10G 50 UNIT Vishay General Semiconductor
Original

EGP10B

Abstract: EGP10G EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major , EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G Unit Maximum repetitive peak reverse voltage VRRM , 24-Oct-05 V www.vishay.com 1 EGP10A thru EGP10G Vishay General Semiconductor Electrical , EGP10D EGP10F 0.95 EGP10G Unit 1.25 V Maximum instantaneous forward voltage at 1.0 , EGP10B RJA (1) EGP10C EGP10D EGP10F EGP10G 50 Unit °C/W Notes: (1) Thermal
Vishay Semiconductors
Original
Abstract: New Product EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast , 300 EGP10G 400 280 400 UNIT V V V A A °C Document Number: 89288 Revision: 01-Feb-11 For , , DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product EGP10A thru EGP10G Vishay General , 0.25 A 4.0 V, 1 MHz IR SYMBOL VF EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT V 0.95 5.0 1.25 , EGP10G UNIT °C/W Note (1) Thermal resistance from junction to ambient, and from junction to lead at Vishay Semiconductors
Original

EGP10G

Abstract: EGP10B EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES , EGP10B 100 70 100 EGP10C 150 105 150 1.0 30 - 65 to + 150 EGP10D 200 140 200 EGP10F 300 210 300 EGP10G , , PDD-Europe@vishay.com www.vishay.com 1 EGP10A thru EGP10G Vishay General Semiconductor ELECTRICAL , VF EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT V 0.95 5.0 100 50 22 15 1.25 IR µA trr CJ , EGP10G UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N EGP10D-E3/54 EGP10D-E3/73 EGP10DHE3
Vishay Semiconductors
Original

EGP10B

Abstract: EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES , EGP10F 300 210 300 EGP10G 400 280 400 UNIT V V V A A °C Document Number: 88582 Revision: 01 , : DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 EGP10A thru EGP10G Vishay , , Irr = 0.25 A 4.0 V, 1 MHz IR SYMBOL VF EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT V 0.95 5.0 , EGP10G UNIT °C/W Note (1) Thermal resistance from junction to ambient, and from junction to lead at
Vishay Semiconductors
Original

EGP10A

Abstract: egp 100 SIYU R EGP10A . EGP10G Plastic Ultra-Fast Recover Rectifiers Reverse Voltage 50 to 400V Forward Current 1.0A 50 - 400 V 1.0 A Features DO-41 · Low reverse leakage · 1.0(25.4) MIN .205(5.2) .166(4.2) High forward surge capability · High temperature , 0.95 22 15 V pF DACHANG ELECTRONICS SIYU R EGP10A . EGP10G , ) IF(A) 10mm EGP10A thru EGP10D 2 EGP10F, EGP10G 1 0.2 Tj = 25 °C 0.1 0.01
SIYU
Original

EGP10G

Abstract: New Product EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast , 300 EGP10G 400 280 400 UNIT V V V A A °C Document Number: 89288 Revision: 01-Feb-11 For , , DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product EGP10A thru EGP10G Vishay General , 0.25 A 4.0 V, 1 MHz IR SYMBOL VF EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT V 0.95 5.0 1.25 , EGP10G UNIT °C/W Note (1) Thermal resistance from junction to ambient, and from junction to lead at
Vishay Semiconductors
Original

EGP10G

Abstract: EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES , EGP10F 300 210 300 EGP10G 400 280 400 UNIT V V V A A °C Document Number: 88582 Revision: 15 , www.vishay.com/doc?91000 EGP10A thru EGP10G Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = , EGP10B EGP10C EGP10D EGP10F EGP10G UNIT V 0.95 5.0 1.25 A 100 50 22 15 ns pF trr CJ , RJA (1) EGP10A EGP10B EGP10C 50 EGP10D EGP10F EGP10G UNIT °C/W Note (1
Vishay Semiconductors
Original

EGP10A

Abstract: EGP10F BL GALAXY ELECTRICAL HIGH EFFICIENCY RECTIFIER EGP10A(Z) - EGP10G(Z) VOLTAGE RANGE: 50 - 400 V CURRENT: 1.0 A FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage High current capability Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-41,molded plastic , 0262008 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES EGP10A (Z)-EGP10G(Z
BL Galaxy Electrical
Original
DO--41 STD-750 25VDC EGP10A-EGP10D
Showing first 20 results.