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EE16+10+pin+bobbin+datasheet

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Abstract: Cypress Semi Conductor Transformer EE-16 (5+5) (rev-A) . : 2008-11-22 ,! SHENZHEN GOLDENWAY INDUSTRY CO., LTD ADD Tel 0755-89739332 Fax 0755-89739334 CUSTOMER DESCRIPTION TRANSFORMER PART NO DATE EE-16(5+5) 2008-11-22 1(PHYSICAL DIMENSION):mm Note: Cut remained of Pin 3,6,7,10 after wires termination. . 2.(SCHEMATIC) PREPARED BY CHECKED BY APPROVED BY CUSTOMER DESCRIPTION TRANSFORMER PART NO DATE EE-16(5+5) 2008-11-22 3 Cypress Semiconductor
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E59481 E253843 E165111 core EE 25 transformer EE16 10 pin bobbin EE 16 bobbin 5 5 core ee16 transformer schematic ee-16 transformer core EE16 transformer 50/60H T375J E305883
Abstract: )â'¦.â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦.10 Active-Semi (Shanghai) Office Contact Information Fast Technical Support Contact Person , PANJIT D2,D3 5 1 P3 POE A-10 3 SH3 CY1 Capacitor, Ceramic, 220pF/50V, 0805 , 1 SH1 1 0.025*11W 1 2 S1 B-7 A-10 6 TEX-E 0.55Φ*2 1 0.025*11W , 5 SH1 Wire A-10 Turn s Insulation Size*QT Y La yer 0.21Φ*1 0.025 *10W , Turn s Finish A-10 Insulation Size*QT Y La yer 0.21Φ*1 0.025 *10W 1 0.025 Active-Semi
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EE16 12V EE16 transformer 5v 2.1a smd transistor 12W 3 pins SMD TRANSISTOR B7 t1/epc17 TRANSFORMER ACT41X ACT410 ACT413 EPC17 ACT411 12V1A
Abstract: ) (7-6) (5-4) (1-2) (7-6) Pri-Sec 6282 (4-3) (4-3) (2,1,6,8) (4-3) (6-8) (2-1) Pri-Sec 2071 980 uH ± 10 , 290.0 uH ± 10% TBD uH MAX shorted 700 m Max 22 200 3000 Vrms Y 4 100 - 390 V 200kHz 2 3 FLYBACK , Transformers EE16 Platforms - THT Type PA3050NL 5 6 7 8 9 10 Mechanical Electronics .656 MAX 16.65 , 0.975 MAX 24.77 MAX 10 6 10 IM 1.235 MAX 31.37 MAX IN (8X) 0.157 4.0 LAYOUT COMPONENT Pulse Electronics
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EE16 transformer EE16 flyback transformer HIGH FREQUENCY Transformer ee16 EE16 type core EE16 EE16 5W 3000V PA3072NL 277VAC 100KH 150KH 2700G
Abstract: characteristics and low-side configuration of LNK520 minimizes EMI - Achieves greater than 10 dBuV margin to , .10 7 Transformer Specification , .26 10 Conducted EMI , (B) IOUT 5.0 375 5.5 300 150 500 625 Measured at 230 VAC + 10% Resistive load , Figure 10. The unit provides a CC operating range of ±25% over a case internal temperature range of 25 Power Integrations
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EE16 10 pin horizontal bobbin EE16 bobbin SBCP-47HY102B EE16 transformer construction ee16 bobbin specification CRF0414-253-4 8R2 EP-54 LNK520P EPR-54 261/A
Abstract: */ */ */ token_read: r1=0x40; r0=dm(LCOM); r0=r0 AND r1; if NE jump token_read; */ LCNTR=10, DO , ; /* within 10 cycles */ if NE jump second_master_mode; /* else second master mode , */ */ */ /*_Protection to avoid two transmitting link ports_*/ EE-16 Page 10 Technical Notes on Analog Devices
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0X66666666 0x0000B000 tmzhi_svc EE-16 a EE16 4 3
Abstract: RoHS EE16 Transformer AEE16-3668 EE16 Core Design 6 Pin Through Hole Electrical Specifications @ 25°C INDUCTANCE @1KHZ/1V (HP-4284A) 2 - 1: 0.991mH ±10% LEAKAGE INDUCTANCE @100KHZ/1V (HP-4284A) 2 - 1: 150uH MAX (SHORT 6-5) DCR CH-502A (MAX) 2 - 1: 8.50 OHM 6 - 5: 24.9 OHM HI-POT TEST PRI TO SEC: AC 3000V 3mA FOR 1 SEC INSULATION TEST PRI TO CORE & COIL: CORE TO COIL: AC 1200V 3mA FOR 1 SEC 100 MOHM MIN BY DC 500V All specifications subject to change without notice. MECHANICAL Allied Components International
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EE16 core ee16 5 2 pin AEE16
Abstract: )â'¦.â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦â'¦.10 Active-Semi (Shanghai) Office Contact Information Fast Technical Support Contact Person , PANJIT D2,D3 5 1 P3 POE A-10 3 SH3 CY1 Capacitor, Ceramic, 220pF/50V, 0805 , 1 SH1 1 0.025*11W 1 2 S1 B-7 A-10 6 TEX-E 0.55Φ*2 1 0.025*11W , 5 SH1 Wire A-10 Turn s Insulation Size*QT Y La yer 0.21Φ*1 0.025 *10W , Turn s Finish A-10 Insulation Size*QT Y La yer 0.21Φ*1 0.025 *10W 1 0.025 Active-Semi
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ACT412 120KH
Abstract: Bead R1 200 k 1/2 W R2 16 L D1 1N4007 D2 1N4007 10 85 - 265 VAC R3 200 D5 1N4007G D D4 1N4007 S L1 1.0 mH VR1 BZX79-B8V2 U2 PC817A C4 0.1 uF 50 V , , 330 mA D6 11DQ06 3 C1 4.7 uF 400 V L3 Bead NC NC 1 C3 1 nF 1 kV RF1 8.2 1.0 , Winding Order (pin numbers) Primary Inductance EE16 Horizontal 10 pin Core Cancellation: 26T, 2 x , ) 300 Table 1. Transformer Design Parameters. dBuV 8.0 6 1.60 mH ±10% Quasi Peak 40 Power Integrations
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TNY263P tdk ee16 pc40 bobbin core pc40 EE16 EE16 pc40 DI-77 TinySwitch-II TDK EE16 PC40 t1 ee16 DI-77 CISPR-22
Abstract: ) Output Voltage Setting Time 10 Efficiency Average Efficiency at 25,50,75 and 100 % of Pno (EPS , or TP4 Test Results: Output I-V Curve 10 Test Result: Line Regulation:56mV Load Regulation , 265Vac Min Max 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Iout (A) Test Condition , Voltage Settling Time 5.3 850 890 4.45 10 Efficiency Average Efficiency at 25,50,75 and BCD Semiconductor
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AP3706 APT13003 Power Transformer EE-16 Bobbin EE 16 ee16 transformer specification EE-16 6 pin bobbin EE-16 core 5V890 EN55022 F/400V F/10V F/50V
Abstract: Test conditions Inductance 100 kHz/ 100 mV Value Unit Tol. ÂuH ±10% L 1250 , SSt 1.1 2012-10-29 SSt TBr 1.0 2012-08-01 SSt TBr REV DATE BY , TBr 1.0 2012-08-01 SSt TBr REV DATE BY CHECKED Würth Elektronik eiSos GmbH , SSt SSt 1.1 2012-10-29 SSt TBr 1.0 2012-08-01 SSt TBr REV DATE BY , 1.0 2012-08-01 SSt TBr REV DATE BY CHECKED Würth Elektronik eiSos GmbH & Co Würth Elektronik
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IEC61558-2-16 EE16/8/5
Abstract: · Output: 7 W, 5 V ± 1.0%, 0 to 1.4 A · EMI noise: CISPR Class-B (conductive) · , Start 4 D7 FRD R3 33K C5 2.2uF +5V C8 330uF Com EE16 R4 10 +5V R7 Allegro MicroSystems
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STR-A6159 AWG32 STRA6159 TDK pc40 28103.20 EE16 5V 050905JG BE16-118CP
Abstract: 0755-88361278 CR6202 PWM 700V 0.25W 10 VCC , _5V1A (SCHEMATIC): D3 2 4 7 6 5 LED 10 9 C5 R4 C6 1 2 3 4 OB C T GND FB , C/C;DIP;+/-10%;PINTCH=110MIL L1 330UH 6*8 C2 4.7UF C/C;DIP;+/-10%;PINTCH , /-10%;PINTCH=200MIL R1 2.2M C5 102/100V 1206 R2 100K RES;MOF;+/-3%;1W C6 470UF/25V C/C;DIP;+/-10%;PINTCH=110MIL R3 4.7 RES;SMD; 0805;+/-5% C7 104/25V 0805 Power Rail
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PC817B THX202H thx202 thx20 1N5822 SMD THX2 1N5822 smd diode AC85V-265V 26010S 330UF/25V 330PF 222/400V 400MIL
Abstract: low primary-to-secondary leakage currents. L1 1.0 mH RF1 8.2 2W D1 1N4005 D2 1N4005 T1 EE-16 C7 1.0 nF 1 kV R4 200 k 1/2 W NC 1 R3 100 D5 1N4005 GP L C1 6.8 uF 400 V 85 - 265 VAC C2 6.8 uF 400 V 4 D6 1N5822 8 L3 3.3 uH 1.0 A C4 1000 uF 10 V 5 V, 1.0 A C5 470 uF 10 V 3 TinySwitch U1 TNY266P N 5 D RTN , 10 Average 0 -10 -20 0.15 1.0 10.0 -100.0 Frequency (MHz) Figure 3. Conducted Power Integrations
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TNY266PN EEL16 core EEL16 transformer EEL16 transformer EEL-16 NC-2H eel16 DI-34
Abstract: Emitter-to-Base Voltage 5 A 8 A 1.0 W 100ms, 1 pulse Tc=25°C 10 W 150 °C -55 , IEBO VCB=50V, IE=0A 1.0 A VEB=5V, IC=0A 1.0 A hFE1 hFE2 VCE=2V, IC=0.5A VCE , Collector-to-Emitter Voltage, VCE - V 1.0 ITR09924 No.538-2/6 2SD826 IC - VBE 5 hFE - IC 1000 , 3 2 3 2 100 7 5 3 1 2 10 10 0 0 0.4 0.8 1.2 1.6 2.0 , =1MHz 100 7 5 3 2 2 10 10 2 3 5 7 2 100 3 5 Collector Current, IC - SANYO Electric
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5A transistor EE16 9V DC-DC EE13 core EE16 60309E MC507 EN538F
Abstract: 1.0 10 150 ­55 to +150 Unit V V V A A W W Tc=25°C °C °C Electrical Characteristics at Ta = , =10V, IC=50mA 120* 95 120 MHz Conditions Ratings min typ max 1.0 1.0 560* Unit uA uA * : The 2SD826 is , 0.2 0.4 0.6 0.8 IB=0 1.0 ITR09924 Collector-to-Emitter Voltage, VCE ­ V 5 , 5 3 2 2 1 0 Base-to-Emitter Voltage, VBE ­ V 10 10 2 3 5 Collector , Output Capacitance, Cob ­ pF 100 7 5 100 7 5 3 2 10 10 3 2 2 3 5 7 Collector SANYO Electric
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pulse trans sanyo ni-cd ENN538E 2009B
Abstract: RoHS EE16 Transformer AEE16-3662 EE16 Core Design 10 Pin Through Hole Electrical Specifications @ 25°C INDUCTANCE @1KHZ/1V (HP-4284A) 2 - 1: 0.991mH ±10% LEAKAGE INDUCTANCE @100KHZ/1V (HP-4284A) 2 - 1: 150uH MAX (SHORT 6-5) DCR CH-502A (MAX) 2 - 1: 8.50 OHM 6 - 5: 24.9 OHM HI-POT TEST PRI TO SEC: AC 3000V 3mA FOR 1 SEC PRI TO SEC: AC 1200V 3mA FOR 1 SEC INSULATION TEST PRI TO SEC & CORE: 100 MOHM MIN BY DC 500V All specifications subject to change without notice. MECHANICAL Allied Components International
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Abstract: Test conditions Inductance 100 kHz/ 100 mV Value Unit Tol. ÂuH ±10% L 1310 , SSt SSt 1.2 2012-12-10 SSt SSt 1.1 2012-10-29 SSt TBr 1.0 2012-08-01 , 1.2 2012-12-10 SSt SSt 1.1 2012-10-29 SSt TBr 1.0 2012-08-01 SSt TBr , 1.0 2012-08-01 SSt TBr REV DATE BY CHECKED Würth Elektronik eiSos GmbH & Co , 2012-12-10 SSt SSt 1.1 2012-10-29 SSt TBr 1.0 2012-08-01 SSt TBr REV DATE Würth Elektronik
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Abstract: Test conditions Inductance 100 kHz/ 100 mV Value Unit Tol. ÂuH ±10% L 1500 , SSt SSt 1.2 2012-12-10 SSt SSt 1.1 2012-10-29 SSt TBr 1.0 2012-08-01 , SSt 1.2 2012-12-10 SSt SSt 1.1 2012-10-29 SSt TBr 1.0 2012-08-01 SSt , 2012-10-29 SSt TBr 1.0 2012-08-01 SSt TBr REV DATE BY CHECKED Würth , SSt TBr 1.0 2012-08-01 SSt TBr REV DATE BY CHECKED Würth Elektronik Würth Elektronik
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Abstract: Test conditions Inductance 100 kHz/ 100 mV Value Unit Tol. ÂuH ±10% L 1310 , SSt 1.1 2012-10-29 SSt TBr 1.0 2012-08-01 SSt TBr REV DATE BY , TBr 1.0 2012-08-01 SSt TBr REV DATE BY CHECKED Würth Elektronik eiSos GmbH , SSt SSt 1.1 2012-10-29 SSt TBr 1.0 2012-08-01 SSt TBr REV DATE BY , 1.0 2012-08-01 SSt TBr REV DATE BY CHECKED Würth Elektronik eiSos GmbH & Co Würth Elektronik
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Abstract: Test conditions Inductance 100 kHz/ 100 mV Value Unit Tol. ÂuH ±10% L 1250 , SSt 1.1 2012-10-29 SSt TBr 1.0 2012-08-01 SSt TBr REV DATE BY , TBr 1.0 2012-08-01 SSt TBr REV DATE BY CHECKED Würth Elektronik eiSos GmbH , SSt SSt 1.1 2012-10-29 SSt TBr 1.0 2012-08-01 SSt TBr REV DATE BY , 1.0 2012-08-01 SSt TBr REV DATE BY CHECKED Würth Elektronik eiSos GmbH & Co Würth Elektronik
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