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EA transistor transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| rray| (40Series, 226Devices) TTL TD62 xxx P , 50V 80V 100 V 19 [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B ip o la r Tran , 1. Bipolar Transistor Arrays B ip o la r Tran sistor A rrays (2) v OU T (V) 'O U T (m A ) CLAM P D IO D E H EA T SINK & GND 04 NC 1 4 I3 NC 03 PIN C O N N EC T IO N E Q U IV A L E N T CIRCUIT TD -
OCR Scan
62003F 62004A 62004f 62004AP TD62801P 62c852 62003P/PA 62003F/FB/ 62004F/FB/ 62004P/PA DIP20 62C852P
Abstract: plest requirem ents. FIGURE 2. MULTISTAGE TRANSISTOR AMPLIFIER T h e a d v a n ta g e s of lin ea r , by th e am plifier show n in Figure 2 is lost. A fter the first transistor is p aid for in a lin ea r , ea r array is usually p ac k a g e d in a P D IP o r S O IC case, but th e next gen eration arrays , a u s e e a c h transistor is exp en sive a n d s p a c e consum ing, so the design b ec o m es an a rt of utilizing e a c h transistor to its m axim um limit, a n art w hich ca n ta k e y e a rs to m -
OCR Scan
HFA3046 HFA3096 HFA3127 HFA3128
Abstract: design-use options. Table 1. Parts List Quantity Part # Description 6 ea. BB4001 (5) NPN Single Emitter 6 ea. BB4002 (5) PNP Single Emitter 2 ea. I'JO BB4003 (3) NPN Single , ea. ! BB4005 (2) NPN Single Emitter, (2) PNP Single Emitter, (1) 6 kQ Resistor 2 ea , kQ Resistor 2 ea. 2 ea. i BB4007 (1) NPN Double Emitter, (1) PNP Double Emitter, (2) JFETs, (1) 5 pF Capacitor 2 ea. ! BB4008 (2) 500 G Resistors, (2) 1 kQ Resistors, (2) 5 kQ -
OCR Scan
KB4000 ALA400 BB4004 BB4006 BB40G7 50AL330240
Abstract: General Purpose Transistor 2N3906-G (PNP) RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. 0.185(4.70) 0.169 , ) 0.022(0.55) 0.015(0.38) -This transistor is available in the SOT-23 0.146(3.70) -As complementary type, the NPN transistor 0. 5 71(1 4 .5 0 ) 0.555 (1 4. 1 0) case with the type designation , :B QW-BTR05 Page 1 General Purpose Transistor Electrical Characteristics (at TA Comchip Technology
Original
2N3904-G MMBT3906-G
Abstract: General Purpose Transistor SMD Diodes Specialist 2N3906-G (PNP) RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M , . 0 14( 0. 36) 0. 043(1. 10) 0.022(0.55) 0.015(0.38) -This transistor is available in the SOT-23 0.146(3.70) -As complementary type, the NPN transistor 0. 5 71(1 4 .5 0 ) 0.555 (1 4 , Temperature TSTG , TJ -55 C REV:B QW-BTR05 Page 1 General Purpose Transistor SMD Diodes Comchip Technology
Original
2N3904 TRANSISTOR SMD 2N3906 SMD
Abstract: General Purpose Transistor 2N3906-G RoHS Device (PNP) Features TO-92 -PNP silicon epitaxial planar transistor for switching and amplifier application. 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. -This transistor is available in the SOT-23 0.055 (1. 14) 0. 043(1. 10 , complementary type, the NPN transistor 3. Collector Dimensions in inches and (millimeter) Maximum , :B QW-BTR05 Page 1 General Purpose Transistor Electrical Characteristics (at TA -
Original
Abstract: FS8853-DS-24_EN Datasheet MAY 2010 Pr RT Re op UN fe ert '™ re ie nc s e O nl y , op UN fe ert '™ re ie nc s e O nl y Fortune Semiconductor Corporation 富æ , order only FO  Pr RT Re op UN fe ert '™ re ie nc s e O nl y The FS8853 is a , P-channel pass transistor. G : G stands for Green-Package Other features include short-circuit protection , IN FS8853 OUT GND -xxGI OUT 1 2 3 IN Pr RT Re op UN fe ert '™ re ie nc s Fortune Semiconductor
Original
FS8853-
Abstract: chan) 1.7 5 (ea chan) 15 â'" 8 OS fiS HTE TYPE Ha OUTPUT TRANSISTOR CONFIGURATION DUG NO. EMITTER , BVqeo ic 3040 . NPN Transistor. -152a 7500. 250 20 80 - 15 3 70 30 . 100 3041 . NPN Transistor 152a .7500 300 100 60 15 6 70 30 50 3042 NPN Transistor 152a 7500 250 20 60 15 3 70 30 50 3043 NPN Transistor 152a 3550 260 70 60 15 3 70 80 50 3044 NPN Darlington 152c 7500 250 300 80 2.0 3 â'" 80 1000 3045 NPN Darlington 152c 7500 250 500 80 2.0 3 â'" 80. 1000 3081 NPN Transistor 179a 6000 250 20 60 -
OCR Scan
HA 3089 ic 7500 transistor 3095 PT 1300 phototransistor photon coupled interrupter nte 3100 npn
Abstract: ) 11 3.15±0.2 12 · Output transistor built-in · Torque ripple cancellation circuit built-in · , output The total current of the output transistor is outputted. ATC 2 5k 4 PCH : Hall , phase compensation of the loop preventing the saturation of output transistor. 12 40k 13 VCC , proportional to VCE of source side output transistor to control the switching power supply. 18k VS 17 , system which controls the current of the sink side output transistor. 18 4.7k 19 TL : Torque Panasonic
Original
65k5 adder ic block diagram 3 element control AN3840NSR HSOP024-P-0450
Abstract: * (PHÖTDTRANSISTOR OUTPUTS) OUTPUT CONFIGURATION NTE TYPE NO DUG NO. 3040 7500. . NPN Transistor. -152a 3041 . .7500 · NPN Transistor 152a 3042 7500 NPN Transistor 152a 3043 152a NPN Transistor 3550 3044 7500 NPN Darlington 152c 3045 NPN Darlington 7500 152c 3081 NPN Transistor 6000 179a 3082 NPN Darlington 6000 179b 3083 NPN Darlington 7500 152f 3084 152f NPN Darlington . 7500, 3086 NPN Dual Transistor,. 401a - 7500 3088 HV NPN Transistor 152a 7500 3089 AC Input NPN Transistor 1521 7500 3096 Low LED Drive NPN 152a - -
OCR Scan
Abstract: , vibration and torque rip­ ple of motor can be realized. â  Features â'¢ Output transistor built-in â , the output transistor is outputted. *1 ( 4 > 4 PCH : H all amp. phase com pensation *1 , saturation of output transistor. Vcc 1 Power supply terminal v H+ : Hall element power supply , control output Terminal outputting the voltage proportional to V Ce of source side output transistor , compensation of the system which controls the current of the sink side output transistor. Standard -
OCR Scan
L600M 3840N HSQP024-P-0450 0D12A03 13E052
Abstract: .2/1449.0888 E 2708 '"01 187 TELEFUNKEN ELECTRONIC BUV 71 17E D Bi fi^EQD^b 000^572 E T-33-13 i _ ! , 2709 '"02 A TELEFUNKEN ELECTRONIC B' -M- -H-W- -M- 1?E D â  fl^SOCnb 0001573 BUV71 T , 250 500 750 V 2710 '"03 189 TELEFUNKEN ELECTRONIC BUV 71 17E D â  fl'teOCnb 000^574 b â  ALGG T-33-13 ^Esat Vi BEsat 5 V 0.5 0.1 ,fc-10A 8 A 6 A 4A 10 A 190 2711 , Orientation of transistor on tape11 Additional marking for specials51 â'¢I 06 Â«â  View on flat side of -
OCR Scan
T0126 TRANSISTOR BI 187 sot-23 npn marking code cr TRANSISTOR BC 187 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR IAL66 15A3DIN
Abstract: www.unisonic.com.tw 2 of 4 QW-R201-022,Ea MPSH10 TEST CIRCUIT NPN EPITAXIAL SILICON TRANSISTOR 2.0k , UNISONIC TECHNOLOGIES CO., LTD MPSH10 RF TRANSISTOR DESCRIPTION NPN EPITAXIAL SILICON TRANSISTOR The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a , -022,Ea MPSH10 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage , SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C,unless otherwise specified) SYMBOL VCBO VCEO VEBO Unisonic Technologies
Original
MPS-H10 MPSH10G transistor l2 MPSH10- MPSH10L- MPSH10G-
Abstract: はä½å¥å›å®¹é‡ã' N チャンãƒãƒ« P チャンãƒãƒ« ä½é›»å§é§å'•ã' ä½ã'ªãƒ³æuæ—とã"ãç , ã'½ãƒ¼ã'¹é›»å§ 記号 Vds N-ch (Max.) 30 Vgs ±20 ±20 V Id 7 6 -6 -5 A 28 , Tj,Tstg A 3 W â"ƒ â ç±ç‰¹æ'§ é ç›® 記号 チャンãƒãƒ« æ'大æ¥åéƒ¨ - , ELM34601AA-N â é›»æ°—特æ'§ (N-ch) é ç›® 特に指定なãå ´åã' Ta=25â"ƒ 記号 条件 Min , Transistor ELM34601AA-N P2103NVG SOP-8 Lead-Free â æ¨™æºç‰¹æ'§æ›²ç·š (N-ch) 7- 3 4 MAY ELM Technology
Original
MAY-21-2004
Abstract: motor can be realized. â  Features â'¢ Output transistor built-in â'¢ Torque ripple cancellation , transistor is outputted. "nn ® 4 PCH : Hall amp. phase compensation â'" Terminal for phase compensation of , for phase compensation of the loop preventing the saturation of output transistor. ^ ^ © 40kn 5 13 , source side output transistor to control the switching power supply. 0 -400//A 0 r8kfi vs ïpjâ'"© 18 , controls the current of the sink side output transistor. 4.7k il fsy- 19 TL I Torque limit terminal -
OCR Scan
HALL ELEMENT Hall element 3 pin hall panasonic TL600 0012A0A
Abstract: はä½å¥å›å®¹é‡ã' N チャンãƒãƒ« P チャンãƒãƒ« ä½é›»å§é§å'•ã' ä½ã'ªãƒ³æuæ—とã"ãç , =-4.5V) â çu¶å¯¾æ'大定格å'¤ é ç›® ドレã'¤ãƒ³ - ã'½ãƒ¼ã'¹é›»å§ ã'²ãƒ¼ãƒ - ã'½ãƒ¼ã'¹é›»å§ 記号 Vds  , '§ é ç›® 記号 チャンãƒãƒ« æ'大æ¥åéƒ¨ - å'¨å›²æ¸©åº¦ Rθja æ'大æ¥åéƒ¨ - , ã'³ãƒ³ãƒ—リメンã'¿ãƒªãƒ¼ãƒ'ワー MOSFET ELM34603AA-N â é›»æ°—特æ'§ (N-ch) é ç›® 記号 条件 特に指å , μA 8.0 SOP-8 Field Effect Transistor Lead-Free ã'³ãƒ³ãƒ—リメンã'¿ãƒªãƒ¼ãƒ'ワã ELM Technology
Original
P2803NVG JUL-25-2005
Abstract: はä½å¥å›å®¹é‡ã' N チャンãƒãƒ« P チャンãƒãƒ« ä½é›»å§é§å'•ã' ä½ã'ªãƒ³æuæ—とã"ãç , =-4.5V) â çu¶å¯¾æ'大定格å'¤ é ç›® ドレã'¤ãƒ³ - ã'½ãƒ¼ã'¹é›»å§ ã'²ãƒ¼ãƒ - ã'½ãƒ¼ã'¹é›»å§ 記号 Vds  , '§ é ç›® 記号 チャンãƒãƒ« æ'大æ¥åéƒ¨ - å'¨å›²æ¸©åº¦ Rθja æ'大æ¥åéƒ¨ - , ã'³ãƒ³ãƒ—リメンã'¿ãƒªãƒ¼ãƒ'ワー MOSFET ELM34604AA-N â é›»æ°—特æ'§ (N-ch) é ç›® 記号 条件 特に指å , Transistor SOP-8 Lead-Free ã'³ãƒ³ãƒ—リメンã'¿ãƒªãƒ¼ãƒ'ワー MOSFET ELM34604AA-N â æ ELM Technology
Original
P2804NVG AUG-19-2004
Abstract: はä½å¥å›å®¹é‡ã' N チャンãƒãƒ« P チャンãƒãƒ« ä½é›»å§é§å'•ã' ä½ã'ªãƒ³æuæ—とã"ãç , =-4.5V) â çu¶å¯¾æ'大定格å'¤ é ç›® ドレã'¤ãƒ³ - ã'½ãƒ¼ã'¹é›»å§ ã'²ãƒ¼ãƒ - ã'½ãƒ¼ã'¹é›»å§ 記号 Vds , 3 W â"ƒ â ç±ç‰¹æ'§ é ç›® 記号 チャンãƒãƒ« æ'大æ¥åéƒ¨ - å'¨å›²æ¸©åº , ) é ç›® 記号 条件 特に指定なãå ´åã' Ta=25â"ƒ Min. Typ. Max. å˜ä½ å'™è'ƒ é , μA 8.0 NIKO-SEM P5003QVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP ELM Technology
Original
ELM34600AA-N DEC-19-2005
Abstract: はä½å¥å›å®¹é‡ã' N チャンãƒãƒ« P チャンãƒãƒ« ä½é›»å§é§å'•ã' ä½ã'ªãƒ³æuæ—とã"ãç , ã'½ãƒ¼ã'¹é›»å§ 記号 Vds ±20 ±20 V Id ãƒ'ルã'¹ ・ ドレã'¤ãƒ³é›»æu N-ch (Max.) 30 , ›² Tj,Tstg A 3 W â"ƒ â ç±ç‰¹æ'§ é ç›® 記号 チャンãƒãƒ« Typ. Max , ELM34605AA-N â é›»æ°—特æ'§ (N-ch) é ç›® 記号 条件 特に指定なãå ´åã' Ta=25â"ƒ Min , . デューãƒã'£ãƒ¼ã'uã'¤ã'¯ãƒ«â‰¦1ï¼ 7- 2 7.4 P3503QVG N- & P-Channel Enhancement Mode Field Effect Transistor ELM Technology
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OCT-08-2004
Abstract: はä½å¥å›å®¹é‡ã' N チャンãƒãƒ« P チャンãƒãƒ« ä½é›»å§é§å'•ã' ä½ã'ªãƒ³æuæ—とã"ãç ,  記号 Vds Vgs Ta=25â"ƒ N-ch (Max.) 40 ±20 -5.5 6.0 50 -4.5 -50 3.0 2.1 -55 ï , â"ƒ â ç±ç‰¹æ'§ é ç›® æ'大æ¥åéƒ¨ - å'¨å›²æ¸©åº¦ 記号 Rθja Device N-ch , '§ (N-ch) é ç›® 記号 条件 特に指定なãå ´åã' Ta=25â"ƒ Min. Typ. Max. å˜ä½ å'™è , - & P-Channel Enhancement Mode ã'³ãƒ³ãƒ—リメンã'¿ãƒªãƒ¼ãƒ'ワー MOSFET Field Effect Transistor ELM Technology
Original
ELM35601KA-S P2804ND5G SEP-16-2005
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