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1N4743A,113 NXP Semiconductors DIODE 13 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, DO-41, 2 PIN, Voltage Regulator Diode ri Buy
1N4745A,113 NXP Semiconductors DIODE 16 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, DO-41, 2 PIN, Voltage Regulator Diode ri Buy
1N4731A,113 NXP Semiconductors DIODE 4.3 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, DO-41, 2 PIN, Voltage Regulator Diode ri Buy

E2G1057-29-41

Catalog Datasheet Results Type PDF Document Tags
Abstract: Pr E2G1057-29-41 el im y 4-Bank ¥ 524,288-Word ¥ 32-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62320 MD56V62320 is a 4-bank ¥ 524,288-word ¥ 32-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible. FEATURES · · · · · · · Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell 4-bank ¥ 524,288-word ¥ 32-bit configuration 3.3 V power supply, ±0.3 V tolerance Input ... Original
datasheet

30 pages,
430.32 Kb

MD56V62320 E2G1057-29-41 E2G1057-29-41 abstract
datasheet frame
Abstract: , Japan http://www.okisemi.com/en/ Pr E2G1057-29-41 el im y 4-Bank ¥ 524,288-Word ¥ 32-Bit ... Original
datasheet

31 pages,
439.65 Kb

MD56V62320 datasheet abstract
datasheet frame