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Part Manufacturer Description Datasheet BUY
130090 TE Connectivity (130090) PIDG RING TONGUE visit TE Connectivity
130094 TE Connectivity (130094) PIDG RING visit TE Connectivity
130098 TE Connectivity Ltd TERM PLASTI-GRIP visit Digikey
1413009-9 TE Connectivity (1413009-9) V23086C2001A403 visit TE Connectivity

E 13009 L

Catalog Datasheet MFG & Type PDF Document Tags

E 13009 2

Abstract: e 13009 l (Figs 4 and 5) lC = 8 A; VCL = 300 V; T0 = 100 °C; l Bon = 1-6 A ; V BEoff = 5 V ^ ^ J u n e 1988 619 / N AUER P H I L I P S /D IS CR ET E MJE 13008 MJE 13009 SSE D t bb53131 , mA; l B = 0 Collector cut-off current V ce = VcESMmax! V b E * -1 .5 V V c e = v CESMmax; VBE = -1 , . 4.0 MHz Collector capacitance V c b = 10 V; l E = 0 Cob typ. 100 PF ton t$ tf , specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V
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transistor E 13009

Abstract: transistor d 13009 Emitter Sustaining Voltage: KSE13008 V c e o ( S U S ) : K S E 13009 Emitter Cutoff Current Iebo *DC , CURRENT Q A IN fc(A}, C O L L E C T O R C U R R E N T lc(A), C O L L E C T O R C U R R E N T COLLECTOR OUTPUT CAPACITANCE TURN ON TIME Cos(pF), CAPACITAN CE V r-'iW C O L L E C T O R B A S E V O LT A G E lc(A). C O L L E C T O R C U R R E N T TURN O FF TIME S AFE OPERATING AREA ts, TURN OFF TIME Vc e(V), C O L L E C T O R E M IT T E R V O LT A G E 592 ELECTRONICS
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transistor E 13009 transistor d 13009 transistor 13009 D 13009 K 13009 TRANSISTOR E 13009 L KSE13008/13009 KSE13009

SR 13009

Abstract: E 13009 ' C Ic = 0.5 A; L = 125 mH; Imeasure = 100 mA V CE Type T E 13008 T E 13009 TE 13008 TE 13009 TE 13008 T E 13009 Symbol ·c e s ces Ic e s ICES V(BRICEO V(BR)CEO V(BR)EBO Min iy p Max 0.5 , Collector-emitter voltage Test Conditions Type T E 13008 TE 13009 T E 13008 TE 13009 Symbol VcEO VcEO VCES VcES V , r c o n n e c te d w ith m c la llic s u rf a c e JH D H C T O 2 2 0 170 Rev. D l: 01.05.1995 , 1Junction case Test Conditions j i Symbol R th J C Value 1.25 Unit K/W 164 Rev. D l
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SR 13009 E 13009 e13009 transistor sr 13009 13008 TRANSISTOR e 13009 f TE13008 TE13009

transistor E 13009

Abstract: D 13009 K VOLTAGE h FE, D C CURRENT G A IN lr.(A>, C O L L E C T O R C U R R E N T COLLECTOR OUTPUT CAPACITANCE TURN ON TIME C 0 B(p P )t CA P A C ITA N C E V .« (V X C O L L E C T O R B A S E V O L T A G E lc , KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for , Collector Base Voltage : K S E 1 3008 : KSE13009 Collector Emitter Voltage : KSE13008 : K S E 1 3009 Emitter
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transistor b 595 J 13009 - 2 E 13009 2 transistor j 13009 p 13009 13009 power transistor

transistor E 13009

Abstract: transistor d 13009 subject to Changs without notice. bfci53T31 Doma? 1 N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 ESE D , . MJE13008 13009 VCESM max. 600 700 V VCEO max. 300 400 V 1.5 8.0 12 24 100 A A A W MECHANICAL DATA , 13009 j / j/ J S5E D bbSB^i ooniaa 3 T-33-13 RATINGS Limiting values in accordance with the , â'¢bm IE >E ptot tot 1 stg Rth j-mb Rth j-a max. max. max. max. max. max. max. max. max. â'¢ MJE13008 13009 VCESM max. 600 700 V vCEO , max. 300 400 V 9.0 8.0 12 24 6.0 12 18 36 2 16 100 800
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tr 13009 transistor MJE 13009 13009 J 13009 13009 K 13009 H 53T31 T0-220

e 13009 d

Abstract: transistor E 13009 CURRENT GAIN 0.1 0.2 0.5 1 2 5 10 20 50 100 lc(A), C O L L E C T O R C U , 1 2 5 10 20 50 100 200 500 1000 Vrn iV), C O L L E C T O R B A SE V O L T A G E lc(A), C O L L E C T O R C U R R E N T SAFE OPERATING AREA ts, tfOiS), TURN OFF TIME TURN OFF TIME lc(A}, C O L L E C T O R C U R R E N T V ce OO. C O L L E C T O R E M IT T E R V O LT A G E 241 ELECTRONICS BO 7^4142 0020157 TAT I KSE13008/13009 NPN
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e 13009 d transistor E 13009 l

D 13009 K

Abstract: p 13009 B J±0.1 (0.2) K±0.1 (A) BFPC L±0.05 R0 0.3±0.05 E 3.3MIN( ) 2 , -1306-5- CL580-1300-9- 4 6 9 10 12 14 19 20 26 28 30 32 40 A 4.0 5.0 6.5 7.0 8.0 , -1305-2- CL580-1307-8- CL580-1306-5- CL580-1300-9- 4 6 9 10 12 14 19 20 26 28 30 32 40 , 17.9 21.9 L 02.5 03.5 05.0 05.5 06.5 07.5 10.0 10.5 13.5 14.5 15.5 16.5 20.5 103 , -1302-4- CL580-1305-2- CL580-1307-8- CL580-1306-5- CL580-1300-9- 4 6 9 10 12 14 19 20 26
Hirose Electric
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DC100V 5mm-12mm OZ63-201C-50-9 FH3305 40S05SH 201C FH330 AC50V AC150V 1055H UL94V-0

e 13009 f

Abstract: E 13009 L 12.00 12.24 D 0.990 1.000 25.15 25.40 E 1.049 1.059 26.67 26.90 F 0.164 0.174 4.16 4.42 G 0.080 0.084 2.03 2.13 H 0.372 0.378 9.45 9.60 n bl u n L M M H SOT-227 Microsemi Catalog Repetive , FAX: (480) 947-1503 www.microsemi. com 1-30-09 Rev. 3 SSPB100060 SSPB1001 20 Figure 1 Typical Forward Characteristics - Per Leg 1000 500 100 50 a. E < o -o 10 â s 1 â'"A , - Amperes 1-30-09 Rev. 3
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SSPB100120 13009 l 2500VDC

transistor E 13009

Abstract: 13009 H (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , -220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q , A 15 VCE = 5 V 31 26 Group L Group H IC = 8 A _ _ DC current gain 0.85 0.9 , L = 200 µH 110 ns see Figure 9 IC = 5 A Inductive load ts IB1 = - IB2 = 1.6 A
STMicroelectronics
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all transistor 13009 13009L transistor switch 13009 ST-13009 13009 TRANSISTOR equivalent power switching transistor 13009

transistor E 13009 l

Abstract: (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , TO-220 mechanical data Dim A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 âP Q , 60 L = 200 µH Fall time V V VCE = 5 V IC = 5 A Inductive load V V V V 1.2 1.6 IB = 1.6 A Group L Group H IC = 8 A _ _ DC current gain 0.85 0.9 1.25 2.5 IB =
STMicroelectronics
Original

transistor E 13009

Abstract: 13009 H (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either , data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L , Group L Group H IC = 8 A _ _ IC = 5 A Inductive load µA µA 400 IC = 5 A Base-emitter , -2 A 1.6 2.5 µs 60 L = 200 µH 110 ns see Figure 9 Inductive load ts
STMicroelectronics
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13009 applications
Abstract: ERIN G INFORM ATION XX-0517-90C N o . o f p in s (1 -2 5 ) A ll o i m l n s i o n s : i n < urs |m il l i m c t t r s l J I1 : C o lle t c o n t a c t s S e r ie s D i s p l a y a n g le NORTH AMERICA E L E C T R O N I C S . IN C. http://www.arieselec.com â , 65 FAX: +31 78 615 43 11 Papendrecht, Holland 13009 REV.A -
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94-HB QQ-B-626 MIL-G45204 QQ-N-290 QQ-C-533 MIL-G-45204
Abstract: L ENTI RE DO NOT L I N E S I N D I C A T I N G E V E R Y LI VE C A V I T I E S E X C E P T EN D CAVI TI ES, S T A R T I N G EROM . 4 9 5 MAX [1 2 . 5 7 ] & APVD B E R Y L L I U M C O P P E R ( b E c U ) OR C O P P E R -N IC K E L -S IL IC O N (CuNiSi). C ON T AC T EI NI SH: . 0 0 0 0 5 0 GOLD IN T I N - L E A D ON S O L D E R TAILS, OVER D D N W 21SEP09 REV , ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL -
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M55302/130-10 M55302/130-09 M55302/130-08 M55302/130-07 M55302/130-06 M55302/130-05

J 13009 - 2

Abstract: j 13009 S> 3 ^ ^ IT : » H l ^ ^ 7 ^ ^ e in . 3 /aml¿X _L , 176379-1 -0 - 29 19 CTINE P LATE) 40 NOTE: / \ \ M A T E R I A L : H 0 U 5 I NG : G L A S S 'OS . a B H J P /N ^ F I L L E D 66NYL0N CUL 9 4 V - 0 ) B L A C K . CONTACT:PHOSPHOR-BRONZE RETENTION L E G : B R A S S . F I N I S H : C O N T A C T : 0 . 3pimMIN- Au A T C O N T A C T A R E A 1 jjm MIN' T I N L E A D A T T I N E , O V E R Ni R E T E N T I O N L E G : 1 jjmMIN` T I N L E
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mj 13009 13009R J-12583 30-JAN

DO-213AA

Abstract: j 13009 9.1 5 9.1 5 9.1 5 9.1 5 8 5 8 0.02 8 1 S e c tio n O rg a n iz a tio n : Z e n e r P a ra m e tric S e c tio n is o rg a n iz e d b y a s c e n d in g P o w e r ( w a tts ), fo llo w e d by a s c e n d in g Vz {v o lts ) G e n e ra l Notes-. 1. in fo rm a tio n o n c o n ta c tin g M icroserns D iv is io n s c a n be o b ta in e d o n th e ba c k c o v e r c? th is -"atafoy 2. T y p e s p e c ifie , Spec Sheet ID (W) 11487 13008 13009 3819 3820 3821 2114 2115 5360 5361 5362 5363 8269 8270 8271 10066
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DO-213AA TA 8270 H Siemens+MTT+95+A+12+N DO-35 JANTXV1N758AUR-1 MLL75BA MLL758A-1 1N5736B
Abstract: FREQ. RANGE (MHz) Outline Drawing ISOLATION (dB) L Typ. Min. fL-fU 10-800 28 M Typ. Min. 25 26 L = low range [fL to 10 fL] INSERTION LOSS (dB) ABOVE 9.0 dB U Typ. Min. 22 25 20 PHASE UNBALANCE (Degrees) L Typ. Max. M Typ. Max. 0.6 1.0 0.9 1.5 L M U Max. Max. Max. U Typ. Max. AMPLITUDE UNBALANCE (dB) L M U Max. Max , 17.78 G .187 4.75 H 3.00 76.20 J .35 8.89 D E .250 5.75 6.35 146.05 K .660 Mini-Circuits
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ZBSC-8-82 UU1268 ZBSC-8-82-S M127604 ED-13009/2

transistor j 13009-2

Abstract: 13009-2 . Electrical Specifications ISOLATION (dB) FREQ. RANGE (MHz) Outline Drawing L Typ. Min. fL-fU 10-800 28 M Typ. Min. 25 26 L = low range [fL to 10 fL] PHASE UNBALANCE (Degrees) AMPLITUDE UNBALANCE (dB) L M U Max. Max. Max. L M U Max. Max. Max. INSERTION LOSS (dB) ABOVE 9.0 dB U Typ. Min. 22 25 20 L Typ. Max. M Typ. Max. U Typ. Max. 0.6 1.0 , 1.62 41.15 C .70 17.78 G .187 4.75 H 3.00 76.20 J .35 8.89 D E .250 5.75
Mini-Circuits
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transistor j 13009-2 13009-2 transistor 13009-2 j 13009-2 M1149 transistor j 13009-2 data sheet 2002/95/EC M114913
Abstract: is ta n c e 1 > 5GQ Quality class 2 > 5GQ Quality class 3 > 5GQ Quality class In itia l in , tu r e M o u ld in g m a te ria l C o n ta c t m a te ria l C o n ta c t fin is h S h e , ,99 Part numbers S o c k e t c o n n e c t o r t in - p la t e d - s o ld e r p in a n g le d , ABZKU N C SN 164 A 13009 X CDF 1 5 ABZKUNCSN C D F 15 A B Z K M C S N 164 A 1 2 9 7 9 X , g c o n n e c t o r t in - p la t e d w it h g r o u n d in d e n t - s o ld e r p in a n g le d -
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Abstract: federal and defense communication · communication system FREQ. RANGE (MHz) fL-fU 10-800 L Typ. Min. 28 , . 26 22 U Typ. Min. 25 20 PHASE UNBALANCE (Degrees) L M U Max. Max. Max. 2.0 4.0 9.0 AMPLITUDE UNBALANCE (dB) L M U Max. Max. Max. 0.2 0.3 0.5 L Typ. Max. 0.6 1.0 M Typ. Max. 0.9 1.5 U Typ. Max. 1.8 2.8 L = low range [fL to 10 fL] M = mid range [10 fL to fU/2] U = upper range [fU/2 to fU , 8.89 D E .250 5.75 6.35 146.05 F .810 20.57 H 3.00 76.20 K .660 16.76 wt grams 300 Mini-Circuits
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transistor j 13009-2

Abstract: ZBSC-8-82-S ) L Typ. Min. 10-800 28 M Typ. Min. 25 26 L = low range [fL to 10 fL] INSERTION LOSS (dB) ABOVE 9.0 dB U Typ. Min. 22 25 20 PHASE UNBALANCE (Degrees) L Typ. Max. M Typ. Max. 0.6 1.0 0.9 1.5 L M U Max. Max. Max. U Typ. Max. AMPLITUDE UNBALANCE (dB) L M U Max. Max. Max. 1.8 2.8 M = mid range [10 fL to fU/2] 2.0 4.0 9.0 , 76.20 J .35 8.89 D E .250 5.75 6.35 146.05 K .660 16.76 F .810 20.57 wt grams
Mini-Circuits
Original
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