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130094 TE Connectivity (130094) PIDG RING visit TE Connectivity
130090 TE Connectivity (130090) PIDG RING TONGUE visit TE Connectivity
130098 TE Connectivity Ltd TERM PLASTI-GRIP visit Digikey
1413009-9 TE Connectivity (1413009-9) V23086C2001A403 visit TE Connectivity

E 13009 2

Catalog Datasheet MFG & Type PDF Document Tags

D 13009 K

Abstract: e 13009 f K/W T1.2/1999.0888 E 2786 Câ'"09 265 TELEFUNKEN ELECTRONIC TE 13008 â'¢ TE 13009 17E D , Id 1 TELEFUNKEN ELECTRONIC üHLUMflKiKl electronic Cctativ« Twhnotog«* 1?E ]> â  0^200^ OOO'îbMT 0 TE 13008 TE 13009 Silicon NPN Power Transistors Applications: Switching mode power supply , *»» i, - 2.45 1 1.351 1 J i 1 10 as ¿=9 -4 078»« E C 2.64 au HçtncM â'¢coning , thermal resistance Junction case TE 13008 TE 13009 Collector-emitter voltage ^ceo 300 400 V ^ces 600
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E 13009 2

Abstract: e 13009 l max (2x) JI 2,54 2,54 -0,9 max (3x) 7 S6 2 2 5 7 .S ^ J u n e 1988 617 / 11 N , 1988 619 / N AUER P H I L I P S /D IS CR ET E MJE 13008 MJE 13009 SSE D t bb53131 , specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V , , motor controls, solenoid/relay drivers and deflection circuits. QUICK REFERENCE DATA MJE13008 13009 , DATA Fig. 1 TO-220AB. 10,3 max 3,7 0 â  < > 3,5 max not tlnnad Pinning: 1 = base 2
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E 13009 2 e 13009 l EB 13009 D transistor E 13009 p 13009 D 13009 K S3T31 T-33-13

transistor E 13009

Abstract: transistor d 13009 Emitter Sustaining Voltage: KSE13008 V c e o ( S U S ) : K S E 13009 Emitter Cutoff Current Iebo *DC , KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed , Characteristic : K S E 13008 : KSE13009 Collector Emitter Voltage: KSE13008 : KSE13009 Emitter Base Voltage , . Base 2 Collector 3 Emitter ELECTRICAL CHARACTERISTICS (r^s-q Characteristic Symbol Test , : P W ^300 / jS, Duty C y c le ¿ 2 % V BE(sat) C ob lc = 0 = 5V, lc = 5A V ce = 5V, lc = 8A lc
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transistor d 13009 transistor 13009 13009 TRANSISTOR e 13009 f e13009 transistor E 13009 l KSE13008/13009

transistor E 13009

Abstract: all transistor 13009 KSE13008/13009 NPN SILICON TRANSISTOR BAS E EM ITTER S ATU R A TIO N V O LTA G E DC CURRENT GAIN , KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed , CHARACTERISTICS Characteristic (Tc =25°C) Symbol V ceo( sus) Iebo h FE VC E(sat) Test Conditions lc = 10mA , 0 V ce= 5V, lc = 5 A V ce= 5V, lc = 8 A lc =5A , lB= 1A lc =8A , lB= 1.6A lc = 1 2 A , I b = 3 A , * Pulse test: PW
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all transistor 13009 transistor EN 13009 D 13009 13009 2 transistor EN 13009 npn 13009

transistor E 13009

Abstract: transistor d 13009 '¢ MJE13008 13009 VCESM max. 600 700 V vCEO , max. 300 400 V 9.0 8.0 12 24 6.0 12 18 36 2 16 100 800 , subject to Changs without notice. bfci53T31 Doma? 1 N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 ESE D , . MJE13008 13009 VCESM max. 600 700 V VCEO max. 300 400 V 1.5 8.0 12 24 100 A A A W MECHANICAL DATA Fig. 1 TO-220AB. Pinning: 1 = base 2 = coltector 3 = emitter Collector connected to mounting base. J r 2,54 2,54 1,3- Dimensions in mm 4,5 max 5,9 min t 15,8 max 0,6 â'"2,4 ^ Çime 1988
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J 13009 - 2 tr 13009 transistor MJE 13009 13008 TRANSISTOR 13009 E 13009 53T31 T0-220

SR 13009

Abstract: E 13009 Collector-emitter voltage Test Conditions Type T E 13008 TE 13009 T E 13008 TE 13009 Symbol VcEO VcEO VCES VcES V , ' C Ic = 0.5 A; L = 125 mH; Imeasure = 100 mA V CE Type T E 13008 T E 13009 TE 13008 TE 13009 TE 13008 T E 13009 Symbol ·c e s ces Ic e s ICES V(BRICEO V(BR)CEO V(BR)EBO Min iy p Max 0.5 , " i |V C E ' V cc (1) Fast electronic switch F igure 2. Test circu it fo r sw itch in g c h a ra cte ristic s - resistiv e load I Ib I bi Lc -IB2 (2) T Ic o M R b Ib
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SR 13009 transistor sr 13009 j 13009 13009 K 13009T BR 13009 TE13008 TE13009

e13009

Abstract: Fairchild e13009 KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application · High Speed Switching · Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3 , cycle2% ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSE13008/13009 VBE , current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10000 , . Safe Operating Area Rev. A, February 2000 KSE13008/13009 Typical Characteristics (Continued
Fairchild Semiconductor
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Fairchild e13009 E13009 F e13008 E-13009 fairchild e13009 application E13009 2 fairchild

transistor E 13009

Abstract: D 13009 K Characteristic (Tc = 2 5 t) Symbol V o e o (s u s ) Test Conditions lc = 10mA, Ib " 0 V eb = 9 V , lc =0 Min 300 400 Typ Max Unit V V * Collector Emitter Sustaining V o lta g e : KSE13008 , KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for , Collector Base Voltage : K S E 1 3008 : KSE13009 Collector Emitter Voltage : KSE13008 : K S E 1 3009 Emitter , 1 8 6 mA V c e = 5V, lc = 5A V c e ~ 5 V , le ~ 8A 40 30 1 1.5 3 1.2 1.6 180 V V V V V
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transistor b 595 transistor j 13009 13009 power transistor transistor switch 13009 E 13009 TRANSISTOR transistor f 3009

e 13009 d

Abstract: transistor E 13009 240 ELECTRONICS 7 ^ 4 1 4 2 002fll5b 042 â  KSE13008/13009 NPN SILICON TRANSISTOR BASE , CURRENT GAIN 0.1 0.2 0.5 1 2 5 10 20 50 100 lc(A), C O L L E C T O R C U , 1 2 5 10 20 50 100 200 500 1000 Vrn iV), C O L L E C T O R B A SE V O L T A , E R V O LT A G E 241 ELECTRONICS BO 7^4142 0020157 TAT I KSE13008/13009 NPN , E M P E R A T U R E 242 ELECTRONICS H 7 ^ 4 1 4 2 0D2Û15Ã" 115 â 
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e 13009 d

D 13009 K

Abstract: p 13009 B J±0.1 (0.2) K±0.1 (A) BFPC L±0.05 R0 0.3±0.05 E 3.3MIN( ) 2 , 1. 0.5mmFPC FFC 1.2mm 2.5mm `062 57% A 17% B 2. FPC FFC 2.0 B , . 500Mø DC100V 2. AC150Vrms1 3. 50mø FPC 1mA 4. 50mø 20 5. 1s , 50Mø -55+15+35+85+15+35 30 23 30 23 5 9. 1 250 MAX 23060 2 350±10 54 1055Hz 0.75mm 310 1 2 3 4
Hirose Electric
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5mm-12mm OZ63-201C-50-9 FH3305 40S05SH 201C JISC0806 FH330 AC50V AC150V 1055H UL94V-0 FH33FPCFFC

e 13009 f

Abstract: E 13009 L SunerSofr Ultrafast 2 X 100A Rectifier SSPB100060 SSPB1001 20 ri ï Dim. Inches Millimeter , 12.00 12.24 D 0.990 1.000 25.15 25.40 E 1.049 1.059 26.67 26.90 F 0.164 0.174 4.16 4.42 G 0.080 , VR = 10V, f = 1Mhz, Tj = 25° C ♦Pulse test: Pulse width 300 /usee, Duty cycle 2% Thermal and , FAX: (480) 947-1503 www.microsemi. com 1-30-09 Rev. 3 SSPB100060 SSPB1001 20 Figure 1 Typical Forward Characteristics - Per Leg 1000 500 100 50 a. E < o -o 10 â s 1 â'"A
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SSPB100120 13009 l 13009 H 2500VDC

transistor 13009

Abstract: transistor E 13009 NPN SILICON TRANSISTOR 13009 4 100mm D423AG-00 240±20µm 4230×4230µm 2 1200×420µm 2 1140×540µm 2 B E KSE13009HE13009 Ta=25 TO-220 Tstg -. -65~150 Tj-. 150 PC -T c=25. 100W VCBO-. 700V VCEO-. 400V IC-DC
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transistor E 13009 2 d423a 13009 NPN Transistor T 13009 HE13009 MA1040 12AIB 10VIC 125VIC

transistor E 13009

Abstract: 13009 H high switching speed Applications 3 1 2 Switch mode power supplies TO , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 Doc ID 11491 Rev 3 ST13009 1 Electrical ratings Electrical ratings Table 2. Absolute
STMicroelectronics
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13009L ST-13009 13009 TRANSISTOR equivalent power switching transistor 13009

transistor E 13009 l

Abstract: Very high switching speed Applications 1 I 2 3 Switch mode power supplies TO , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 Doc ID 11491 Rev 3 ST13009 1 Electrical ratings Electrical ratings Table 2. Absolute
STMicroelectronics
Original

transistor E 13009

Abstract: 13009 H high switching speed Applications 3 1 2 Switch mode power supplies TO , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , for delivery details. August 2007 Rev 2 1/11 www.st.com 11 Contents ST13009 , . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 ST13009
STMicroelectronics
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13009 applications
Abstract: . â'¢Pin body is Brass Alloy 360, 1/2 hard per QQ-B-626. â'¢Pin body plating is 200p [5.08pm] Gold per , ERIN G INFORM ATION XX-0517-90C N o . o f p in s (1 -2 5 ) A ll o i m l n s i o n s : i n < urs |m il l i m c t t r s l J I1 : C o lle t c o n t a c t s S e r ie s D i s p l a y a n g le NORTH AMERICA E L E C T R O N I C S . IN C. http://www.arieselec.com â , 65 FAX: +31 78 615 43 11 Papendrecht, Holland 13009 REV.A -
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94-HB MIL-G45204 QQ-N-290 QQ-C-533 MIL-G-45204

transistor E 13009

Abstract: transistor d 13009 I3 0 0 5 M JE I3 0 0 6 M JE 13007 M JE 13008 M J E 13009 T IP 2 9 /A /B /C T IP 3 1 /A /B /C T I P 4 , YTS3905 YTS3906 Y TS4I23 YTS4124 YTS412Ò YTS4126 YTS4400 YTS440I YTS4402 YTS4403 V e» (V) 40 40 -4 0 -4 0 30 25 -3 0 -2 5 40 40 -4 0 -4 0 -1 2 0 -1 5 0 140 160 30 40 -4 0 -6 0 30 30 300 200 -3 0 0 -2 0 0 le (mA) 200 200 -2 0 0 -2 0 0 200 200 -2 0 0 -2 0 0 600 600 -6 0 0 -6 0 0 -6 0 0 -6 0 0 600 600 600 600 , 0 5 0 -1 5 0 1 2 0 -3 6 0 5 0 -1 5 0 120 - 360 5 0 -1 5 0 100 - 300 5 0 -1 5 0 1 0 0 -3 0 0 4 0 -1 8
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13007 2 transistor 13007 m 13009 PNP Transistor jE 13007 transistor E 13007 power transistor npn to-220 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124
Abstract: ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL , E D CONNECTORS N U M B E R S INDI CATI NG END CAVITIES . 0 6 2 2 . 0 1 0 HIGH C H A R A C T E R S . KEYS ( 2 ) AND KEY WITH C O N N E C T OR . 9 MOUNTING TESTING: GROUP LETTERS [2 .5 4 ] PY DM AMP SU LEI DE. C O N T AC T AREA, . 0 0 0 1 0 0 . 0 0 0 0 3 0 N I C K E , EN D CAVI TI ES, S T A R T I N G EROM . 4 9 5 MAX [1 2 . 5 7 ] & APVD B E R Y L L I U M -
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21SEP09 M55302/130-10 M55302/130-09 M55302/130-08 M55302/130-07 M55302/130-06

DO-213AA

Abstract: j 13009 9.1 5 9.1 5 9.1 5 9.1 5 8 5 8 0.02 8 1 S e c tio n O rg a n iz a tio n : Z e n e r P a ra m e tric S e c tio n is o rg a n iz e d b y a s c e n d in g P o w e r ( w a tts ), fo llo w e d by a s c e n d in g Vz {v o lts ) G e n e ra l Notes-. 1. in fo rm a tio n o n c o n ta c tin g M icroserns D iv is io n s c a n be o b ta in e d o n th e ba c k c o v e r c? th is -"atafoy 2. T y p e s p e c ifie , Spec Sheet ID (W) 11487 13008 13009 3819 3820 3821 2114 2115 5360 5361 5362 5363 8269 8270 8271 10066
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DO-213AA TA 8270 H Siemens+MTT+95+A+12+N DO-35 JANTXV1N758AUR-1 MLL75BA MLL758A-1 1N5736B

J 13009 - 2

Abstract: j 13009 29 19 ? 3? 49 49 39 39 (C O N N E C T O R 6 2 .2 3 6 2 .2 3 4 9 .5 3 4 9 .5 3 49 39 LAYOUT S ID E ) MOUNT 0 0 .8 ±0 . 05 -8 -7 4 9 .5 3 3 6 .8 3 3 6 .8 3 24. 1 3 115.57 51 . 53 6 4 . 2 3 1 1 , O V mm* CAWG MATERIAL B 0 LTR R E V I S E D FJ 00- 0589-93 H . K Y . F REVISED J -13009 , S> 3 ^ ^ IT : » H l ^ ^ 7 ^ ^ e in . 3 /aml¿X _L , 2 .5 4 2-0 2.6 ±o. 1 ± 0.05 1 .27Xa=A_ . ±0.05 1 .27 . 0 I0 I 0 IO I 0 I'Q I 0 1
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mj 13009 13009R 66NYL0N J-12583 30-JAN
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