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E 13007

Catalog Datasheet MFG & Type PDF Document Tags

EB 13007

Abstract: E 13007 Max Unit * Collector Emitter Sustaining Voltage: KSE13006 : K S E 13007 Emitter Cutoff Current , KSE13006/13007 HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for , , lc = 2A V c e = 5V, lc=5A lc = 2A, lB=0.4A Ic =5A,I b =1A lc = 8A, lB = 2A ic =2A, lB=0.4A > aT II , , lc = 5A = Im = 1A tf > II 587 ELECTRONICS KSE13006/13007 DC CURRENT GAIN NPN SILICON TRANSISTOR BA S E EMITTER SATURATION VOLTAGE CO LLECTO R EMITTER SATURATION VOLTAGE IciA), C O
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EB 13007 E 13007 transistor E 13007 T 13007 D 13007 K 13007 TRANSISTOR KSE13006/13007 KSE13Q06 KSE13007

E 13007

Abstract: E13007 MICROELECTRONICS CORP. TO-220AB Dimension Marking: B A D E H MJ E 13007 C Control Code Date , 3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical Inches Min. Max. 0.2197 , C D E G H Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60
Hi-Sincerity Microelectronics
Original
HMJE13007 E13007 mj 13007 transistor MJ 13007 sec 13007 transistor E 13007-c transistor d 13007 HE200207 UL94V-0

E 13007

Abstract: transistor MJ 13007 MICROELECTRONICS CORP. TO-220AB Dimension Marking: B A D E H MJ E 13007 C Control Code Date , 3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical Inches Min. Max. 0.2197 , B C D E G H Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35
Hi-Sincerity Microelectronics
Original
D 13007 K transistor sec E 13007 IC 4047 IC 4047 datasheet NPN Transistor 13007 13007C

sec 13007

Abstract: E 13007 Page No. : 4/5 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E MJ E 13007 C D Date Code Control Code H M I K 3 G Pin Style: 1.Base 2 , -220AB Plastic Package HSMC Package Code: E Important Notice: · All rights are reserved. Reproduction in
Hi-Sincerity Microelectronics
Original
SEC E 13007 - 2 j 13007 j 13007 TRANSISTOR 13007 13007 applications

E13007

Abstract: E 13007 13007 Unit Vdc Vdc Vdc Ade Ade Ade V C A S E 221A -06 TO-220AB MJE13007 400 700 9.0 e.o 16 4.0 8.0 12 24 lc 'CM IB IBM IE 'e m VlSOL - - - 4500 3500 1500 PD T j. Tstg 60 0.64 40 , 13007 MJF13007 SWITCHING TIME NOTES In re sistive sw itch in g circu its, rise, fa ll, a n d sto ra g e , Cutoff Current (VCE S -7 0 0 V d c ) (VcES - 700 Vdc, T c - 125°C) Emitter Cutoff Current (V e b - 9 0 , Inductive SOA with Base Reverse Biased *ON CHARACTERISTICS DC Current Gain (IC - 2.0 Adc, V q e - 5.0 Vdc
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F13007 F 13007 equivalent 13007 je13007 SE 13007 TRANSISTOR transistor 13007 JE13007 JF13007 MJE/MJF13007 T0-220 E69369

TFK diodes BYW 76

Abstract: tfk U 264 16 18 23 22 19 19 19 21 20 19 18 18 18 18 18 21 T E 13002 TE 13003 TE 1 3 004 TE 1 3005 TE 13006 TE 13007 TE 13008 TE 13009 21 21 21 21 21 21 21 21 TFK 3 0 7 0 D T , E F f Af Fc fT G Gps bF E /B 1 /B2 /(BR | lc / /CAV /CB0 /C S E /CM la l0S' l DSS /E /EB20 ir If /FAV /FM /k /p iR lR /z A Pq Ptot Pv rf Anode Acceptable , E O ^CB ^CE V CEO V CER ^CERM ^C Esat ^DD ^DS V EB2 v r V ,s ^RW M ^SS vz l
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TFK diodes BYW 76 tfk U 264 TFK diodes 148 tfk 804 byw 56 equivalent BYW 90 BYF51 BYT53C

transistor 13003 AD

Abstract: ksd-180 KSC5039 KSC2335 K S E 13007 KSE13009 KSC2751 KSC5338 KSC5020 KSC5021 KSC5321 KSC5024 KSC5025 KSC5026 , , $=G c e , &=Gcb , *=OISK TY P E TRANSISTOR 5 100 35 ELECTRONICS TRANSISTORS 1-4. High , V ce (V) 5 5 5 5 5 5 5 5 5 lc (A) 100 100 100 100 100 100 100 100 10 hFE Condition V c E (s a t , MAX 4 1.5 V gs(OFF)(V) 1.7.2. TO-92S Type J-F E T V qdo DEVICE (V) KSK30 KSK117 50 50 (mA) 10 10 , KSC5035 KSC5034 BD157 BD158 KSE340 BD159 KSC2690 KSC2690A BD135 BD137 BD139 K S E 13003 BD375 BD233 BD377
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transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H

B0244C

Abstract: D880 voltage regulator KSC5039 KSC2335 KSC5337 K S E 13007 K S E 13009 KSC2751 KSC5338 KSC5020 KSC5021 KSC5321 KSC5024 KSC5025 , 50 170 130 095 1.2 1.2 6 6 10 10 50 100 110 50 30 70 100 50 30 70 100 1 1.3 (mA) (mA) V csisa t), Y*e , Polarity NPN KSA1175 KSC2785 PNP Concition V ce lc hFE Condition lc le V c e (sat , 4 *10 4 3 3 3 3 2 2 *4 *2 *2 *2 Condition V cE h f= e MAX 650 150 150 360 700 700 360 500 , 1.5 © 0 36 #0.5 #0.5 1.6 #0 6 1 *1 5 2 25 3.2 *=TYP, #=CRE, @=Ccb, $=Gce, &=Gca. ` "« D IS K TY P E
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B0244C BD64C D880 voltage regulator TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR BCX70J BCX70K BCX71 BCX71H BCX71K KST1623L3

SE 13007

Abstract: D 13007 K 13007 Emitter-base breakdown voltage /E=1 mA Collector-emitter saturation voltage /c=5 A./B=1 A 'c = , â'¢ TE 13007 Silicon NPN Power Transistors Applications: Switching mode power supply, electronic , '¢ Power dissipation 100 W â'¢ High reverse voltage T- 33" IB Dimensions in mm I I n T as»111» e , range Maximum thermal resistance Junction case 'CM stg TE 13006 300 600 TE 13007 400 700 9 8 16 4 8 100 150 -65. + 150 1.25 V V V A A A A W CC °C K/W T1.2/718.0888 E 259 AEG CORP D â
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SE 13007 p 13007 D 13007 13007t E 13007 0 T 13007 r G02T4B T-33-13

D 13007 K

Abstract: T 13007 : V(BR)CE0 2782 C-OS 261 TELEFUNKEN ELECTRONIC IALGG TE 13006 â'¢ TE 13007 1?E » â  flTSDOTb , TE 13006 â'¢ TE 13007 Silicon NPN Power Transistors Applications: Switching mode power supply , 13006 TE 13007 300 600 400 700 9 8 16 4 8 100 150 -65. + 150 1.25 V V V A A A A W °C °C K/W T1.2/718.0888 E 2780 Câ'"03 259 TELEFUNKEN ELECTRONIC 17E J> m aqSOOIb QOO^mH TE 13006 â'¢ TE 13007 Characteristics Min. Typ. ' 25 °C, unless otherwise specified Collector cut-off current 'CE'
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m 13007 13007 m 13007 H 13006 E 13007-1 npn 13007

transistor 13007

Abstract: 13007 TRANSISTOR case T1.2/718.0888 E »18 TE 13006 'C E O TE 13007 400 700 9 8 ^ CES 'E B O 300 600 , current = 600 V = 700 V 'C E ' = 150°C, = 600 V = 700 V 'C E ' TE TE TE TE 13006 13007 13006 13007 Min , D ^ b O Q EH bU S T E 13006.TE 13007 _ , T-33-13 \ALGG ¡Cm0 . B A B C 160 % , · TE 13007 6 0 Vi 1?E » fl^2D0^b OOQ^bHb 5 * IALGG T-33-13 +Vg-125V X L$ lp , -06 TELEFUNKEN ELECTRONIC 1?E I> 0 0 0 7 IAL66 TE 13006 · TE 13007 _ T
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13006 TRANSISTOR ballast 13007 TRANSISTOR transistor m 13007 f 13007 d 13007 2 transistor W 13007 TRANSISTOR 15A3DIN

D 13007 K

Abstract: E 13007 bent) power package; 27 leads (lead length 6.8 mm) SOT827-1 9397 750 13007 Preliminary data , PGND4 Fig 1. Block diagram. 9397 750 13007 Preliminary data sheet © Koninklijke Philips , power ground 1 9397 750 13007 Preliminary data sheet © Koninklijke Philips Electronics N.V , reset occurred) is reset, and pin DIAG is no longer held LOW. 9397 750 13007 Preliminary data , signal and the amplifier is not muted. Offset detection is always enabled. 9397 750 13007
Philips Semiconductors
Original
TDA8592J TDA8592Q TDA8592 TDA3664 philips speakers tweeter 13007 d1

e13007

Abstract: transistor e13007 KSE13006/13007 KSE13006/13007 High Voltage Switch Mode Application · High Speed Switching · , Fairchild Semiconductor International Rev. A, February 2000 KSE13006/13007 VBE(sat), VCE(sat)[V , KSE13006/13007 Typical Characteristics (Continued) 100 PC[W], POWER DISSIPATION 90 80 70 60 , 2000 KSE13006/13007 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 , reference information only. ©2000 Fairchild Semiconductor International Rev. E Fairchild
Fairchild Semiconductor
Original
transistor e13007 E13007 2 e13007 1 E13007 - 1 transistor E13007 2 fairchild E13007 transistor

EB 13007

Abstract: p 13007 KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 â , 2A, Ib = 0.4A lc = 5A, lB= 1A VC = 10V, f = 0.1MHz B V c e = 10V, lc = 0.5A Vcc = 125V, lc = 5A , ELECTRONICS 7Tb4142 0020153 333 KSE13006/13007 NPN SILICON TRANSISTOR DC CURRENT GAIN BASE EMITTER SATURATION VOLTAGE COLLECTOR EMITTER SATURATION VOLTAGE lc(A), C O L L E C T O R C U R R E N T lc(A), C O L L E C T O R C U R R E N T TURN ON TIME COLLECTOR OUTPUT CAPACITANCE
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30CVS

EB 13007

Abstract: SE 13007 KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed , : KSE13006 : KSE13007 C o lle c to r E m itte r V oltag e: KSE13006 : KSE13007 E m itte r Base V oltag e C o , n (T c = 2 5 ° C ) J u n c tio n T e m perature S torage Tem pe ratu re C o lle c to r Base V oltag e Symbol VcBO Rating 600 700 300 400 9 8 16 Unit V V V V V A A A W °C "C VcEO V , > Characteristic 'C o lle c to r E m itte r S u s ta in in g V oltage: KSE13006 : KSE13007 E m itte r C u to ff C
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13007* transistor Y 13007

FAIRCHILD E 13007

Abstract: transistor E 13007 KSE13006/13007 KSE13006/13007 High Voltage Switch Mode Application · High Speed Switching · , Fairchild Semiconductor International Rev. A1, December 2000 KSE13006/13007 VBE(sat), VCE(sat)[V , KSE13006/13007 Typical Characteristics (Continued) 100 PC[W], POWER DISSIPATION 90 80 70 60 , 2000 KSE13006/13007 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 , reference information only. ©2000 Fairchild Semiconductor International Rev. E Fairchild
Fairchild Semiconductor
Original
FAIRCHILD E 13007 FAIRCHILD E 13007- 1 tr 13007 transistor 13007 fairchild 13007 npn KSE13007 equivalent

power high voltage capacitor vishay

Abstract: X5331 V i s h ay I n t er t e c h n o l o g y, I n c . INNOVAT VISHAY ESTA POWER CAPACITORS PhMKDg , 1000 V Resources · Datasheet: PhMKDg - http://www.vishay.com/doc?13007 · For technical questions , t er t e c h n o l o g y, I n c . ESTAdry D-Type, LVAC Capacitors · Self-healing technology , Revision: 27-Jul-11 Mounting position Safety features +2 68 - 2 Document Number: 13007 H ±1 , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Document Number: 13007 1 For technical questions
Vishay ESTA
Original
power high voltage capacitor vishay X5331 pwm+c+code+3phase+with+atmega VMN-PT9018-1201

D 13007 K

Abstract: LD 13007 E REV A , REVISIONS ECN, ERN PRO DUCT DRAWING NO. (EAR 13007) F DATE N 0 V 2 8 /Q 6 APP R D . K.L. M E C H A N IC A L M ATERIALS: S H E LL S : IN SER T: DATA: ALL M ATER IALS AR E S TEE L, TIN R oH S C O M P LIA N T. S TA M P ED PLATED. HIGH T E M P E R A TU R E R E S IS TAN T TH E R M O P LA S TIC , G LASS R E IN FO R C E D . FLAM M A B ILIT Y RATING U L 9 4 V - 0 , B LA C K . P H O S P H O R B R O N Z E , 3 0 M IC R O IN C H E S [ 0 . 7 6 M IC R O N S ] GO LD PLATED OVER 5
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LD 13007

transistor E 13007

Abstract: FAIRCHILD E 13007 s e m ic o n d u c t o r TM >31999 F airchild S e m iconductor C orporation KSE13006/13007 , KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Sw , c E (s a t ) * Base Em itter Saturation Voltage O utput Capacitance Current G ain Bandw idth Product Turn On Tim e Storage Tim e Fall T im e * Pulse te st: PW , 0.5 lc
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OCR Scan

transistor E 13007

Abstract: TOP 13007 KSE13006/13007 KSE13006/13007 High Voltage Switch Mode Application · High Speed Switching · , KSE13006/13007 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 VCE , KSE13006/13007 Typical Characteristics (Continued) 100 90 PC[W], POWER DISSIPATION 80 70 60 50 , /13007 Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3 , Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E
Fairchild Semiconductor
Original
KSE13007H3SM TOP 13007 PW300 KSE13007H1SM KSE13007SMTU KSE13007H2SM KSE13007SM KSE13007H1SMTU
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