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Depletion MOSFET

Catalog Datasheet MFG & Type PDF Document Tags

DQ381

Abstract: P-Channel Depletion Mosfet depletion MOSFET 22 N-ohanne! depletion MOSFET 4 Diodes 5 DG384A - 88 m ils- Pad No. 1 3 4 5 6 8 9 10 , 22 P-ohannel depletion MOSFET 30 N-channel depletion MOSFET 4 Diodes 5-205 SILICONIX I N C , Drain 2 12 11 1 6 i 9 20X ICMJB 15 N-ohannel depletion MOSFET 4 Capacitors 2 Diodes I Resistor I I P-channel depletion MOSFET DG390A Pad No. ' 88 m llt1 3 4 5 8 8 9 10 11 13 14 15 16 , Source 1 87 mils 10 11 13 14 15 20X ICMJC 30 N-ohannel depletion MOSFET 8 Capacitors 4
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OCR Scan
DQ381 P-Channel Depletion Mosfet depletion p mosfet Depletion MOSFET vd 5205 DG381AAK DG381A/384A/387A/390A DG180 DG38XA PLUS-40 DG387A AE5473S

Depletion MOSFET

Abstract: DQ381 MOSFET 20X 22 N-ohannel depletion MOSFET 4 Diodes 5 DG384A - 88 milsâ'" 10 ICMJA 8 Capacitors 2 Resistors 22 P-ohannel depletion MOSFET 87 mils 11 13 14 20X 15 30 N-ohannel depletion MOSFET 4 Diodes Pad , ) T-51-.ll DQ387A -88 mil*â'" 12 ICMJB 4 Capacitors I Resistor II P-ohannol depletion MOSFET 1 6 6 9 20X 16 N-oharinel depletion MOSFET 2 Diodes 11 87 mil* Pad Funotlon No. 3 Drain 1 4 Souroe 1 5 Input , depletion MOSFET 87 mils 30 N-ohannel depletion MOSFET 4 Diodes Pad Funotlon No. 1 Input 1 3 Drain 3 4
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OCR Scan
d3301d DG303 3301D 2S4735 T-51-11 DG384A/DG390A

Depletion MOSFET

Abstract: "depletion MOSFET" P-ohannel depletion MOSFET " · 22 N-channel depletion MOSFET 4 Diodes > : v ' V DG301A , 13 14 1 ? 20X ICMJB 4 Capacitors .15 N-channel depletion MOSFET 1 Resistor 2 Diodes 11 P-ohannel depletion MOSFET 5-165 1 _ r _ T r_ ( SILICONIX 8254735 SILICONIX INC INC 3 D e , Resistors 22 P-ohannel depletion MOSFET 20X 30 N-ohannel depletion MOSFET 4 Diodes DG303A Pad No , P-ohannel depletion MOSFET 30 N-channel depletion MOSFET 4 Diodes 5-166 -I SILICO'NIX INC Q3
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OCR Scan
DG300A DG301 DG302 DG300A/301 DG300A-DG303A DQ303A DG300A/301A/302A/303A

depletion MOSFET

Abstract: then a resistor can be added in series with V|N 3. If the input is AC then a depletion MOSFET may be , possible. However, a dynamic resistor consisting of a depletion MOSFET may be added as depicted in the , package. This method limits the +VM voltage to V DD + V gsioffj of the depletion MOSFET for all input , depletion MOSFET. The worst-case power dissipation in the HV9906 is now given by the equation Power , depletion MOSFET is given by the equation Power Dissipation in MOSFET * (Vs - VD D - V, DD v G S {O F F )X
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OCR Scan
80VAC 135VAC 12VDC 400VDC 65VAC 280VAC
Abstract: added in series with VIN 3. If the input is AC then a depletion MOSFET may be added in series with VIN 4 , . However, a dynamic resistor consisting of a depletion MOSFET may be added as depicted in the following , resistance of the package. This method limits the +VIN voltage to VDD + VGS(OFF) of the depletion MOSFET , voltage rating of the depletion MOSFET. The worst-case power dissipation in the HV9906 is now given by the , operating at F MAX MOSFET Gate Drive Output tR tF Rise Time Fall Time 75 75 nSec nSec CGATE = 750pF Supertex
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step up 12v ac to 100v ac 400hz transformer

Abstract: added in series with VIN 3. If the input is AC then a depletion MOSFET may be added in series with VIN 4 , depletion MOSFET may be added as depicted in the following diagram. Using High Thermal Conductivity , limits the +VI N voltage to VDD + VGS(OFF) of the depletion MOSFET for all input voltages and in fact raises the maximum allowable peak input voltage to the breakdown voltage rating of the depletion MOSFET , ( VDD + VGS( OFF )max ) × IIN and the dissipation in the depletion MOSFET is given by the equation Power
Supertex
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step up 12v ac to 100v ac 400hz transformer

7n60s5

Abstract: byv26 equivalent with VIN 3. If the input is AC then a depletion MOSFET may be added in series with VIN 4 , depletion MOSFET may be added as depicted in the following diagram. For an encapsulated application the , the +VIN voltage to VDD + VGS(OFF) of the depletion MOSFET for all input voltages and in fact raises the maximum allowable peak input voltage to the breakdown voltage rating of the depletion MOSFET , = ( VDD + VGS( OFF )max ) × IIN and the dissipation in the depletion MOSFET is given by the
Supertex
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7n60s5 byv26 equivalent depletion 400V power mosfet DN2540 HV9906P STP8NM60 BYV26 7N60S5 BYV28 1N4148 MMBT2907

Depletion MOSFET

Abstract: offline switcher with VIN 3. If the input is AC then a depletion MOSFET may be added in series with VIN 4 , resistor consisting of a depletion MOSFET may be added as depicted in the following diagram. For an , package. This method limits the +VIN voltage to VDD + VGS(OFF) of the depletion MOSFET for all input , the depletion MOSFET. The worst-case power dissipation in the HV9906 is now given by the equation Power Dissipation HV9906 = ( VDD + VGS( OFF )max ) × IIN and the dissipation in the depletion MOSFET is
Supertex
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offline switcher ips capacitor HV9906LG HV9906X 400V to 6V DC Regulator

7N60S5

Abstract: 400V to 6V DC Regulator added in series with VIN 3. If the input is AC then a depletion MOSFET may be added in series with VIN 4 , dynamic resistor consisting of a depletion MOSFET may be added as depicted in the following diagram. Using , of the package. This method limits the +VIN voltage to VDD + VGS(OFF) of the depletion MOSFET for , voltage rating of the depletion MOSFET. The worst-case power dissipation in the HV9906 is now given by the , FMAX VIN = 12V VIN = 400V Decaying VDD MOSFET Gate Drive Output tR tF Rise Time Fall Time 75 75
Supertex
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DC DC converter 400V lighting led lamp circuit diagram

7n60s5

Abstract: flyback converter DC/DC 400V the input is AC then a depletion MOSFET may be added in series with VIN 4. Encapsulating the circuit , depletion MOSFET may be added as depicted in the following diagram. For an encapsulated application the , . This method limits the +VIN voltage to VDD + VGS(OFF) of the depletion MOSFET for all input voltages , depletion MOSFET. The worst-case power dissipation in the HV9906 is now given by the equation Power Dissipation HV9906 = ( VDD + VGS( OFF )max ) × IIN and the dissipation in the depletion MOSFET is given by
Supertex
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flyback converter DC/DC 400V 400V voltage regulator non-isolate flyback pfc using pwm 7N60 byv26 500 LED-driver 6 pins flyback

IXAN0006

Abstract: 0006 L1 C4 Depletion MOSFET Rbias Rccs VCC VCAP 1 Vreg UVLO µP 220nF + , circuit, enough The addition of Rccs is used to shift power dissipation away from the depletion MOSFET , the depletion MOSFET will be fixed at a value close to that of Vzener. If the value of HVDCin is large then the voltage drop across the depletion MOSFET and resulting power dissipation can be large , (IXI859) to supply power to a micro-controller, a high current non-inverting MOSFET gate driver, a
IXYS
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IXAN0006 IXI858 0006 power factor load pump depletion mode power mosfet Zener diode 8,2v IXI858/859

TDA 16822

Abstract: 04N60C3 equivalent Product Description Voltage Class Page N-Channel Enhancement MOSFET 600 V 21 N-Channel Depletion MOSFET 240 V 23 N-Channel Depletion MOSFET 600 V 23 N-Channel Depletion MOSFET 200 V 23 , MOSFET 800 V 23 N-Channel Enhancement MOSFET 400 V 18 N-Channel Depletion MOSFET 600 V 23 N-Channel Depletion MOSFET 250 V 23 N-Channel Depletion MOSFET 50 V 23 N-Channel Depletion MOSFET 100 , MOSFET drain-source voltage VDS = VI Core demagnetization is no problem The transformer may have a high
Infineon Technologies
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TDA 16822 04N60C3 equivalent ICE1QS01 equivalent 07N60C3 mosfet transistor tda 3050 1QS01 B152-H8202-X-X-7600
Abstract: ECG462 Transistors N-Channel Depletion MOSFET V(BR)DSS (V) V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) I(GSS) Max. (A) @V(GS) (V) (Test Condition) r(DS)on Max. (Ohms) @V(GS) (V) (Test Condition) @I(D) (A American Microsemiconductor
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Abstract: 2N3797 Transistors N-Channel Depletion MOSFET V(BR)DSS (V)20 V(BR)GSS (V)10 I(D) Max. (A)20m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) I(GSS) Max. (A)1.0p @V(GS) (V) (Test Condition) r(DS)on Max. (Ohms) @V(GS) (V) (Test American Microsemiconductor
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Abstract: BSP149 Transistors N-Channel Depletion MOSFET V(BR)DSS (V)200 V(BR)GSS (V)14 I(D) Max. (A)480m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.44 Absolute Max. Power Diss. (W)1.8 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb.70 V(GS)th Max. (V) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)20 r(DS)on Max. (Ohms)3.5 @V(GS) (V) (Test American Microsemiconductor
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Abstract: 286-1BFY Transistors N-Channel Depletion MOSFET V(BR)DSS (V)30 V(BR)GSS (V)10 I(D) Max. (A)20m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) I(GSS) Max. (A)50p @V(GS) (V) (Test Condition) r(DS)on Max. (Ohms) @V(GS) (V) (Test Condition American Microsemiconductor
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mosfet 2N3796

Abstract: 2N3796 Transistors N-Channel Depletion MOSFET V(BR)DSS (V)25 V(BR)GSS (V)10 I(D) Max. (A)20m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) I(GSS) Max. (A)1.0p @V(GS) (V) (Test Condition) r(DS)on Max. (Ohms) @V(GS) (V) (Test
American Microsemiconductor
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mosfet 2N3796
Abstract: BSS129 Transistors N-Channel Depletion MOSFET V(BR)DSS (V)240 V(BR)GSS (V)14 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)150m @Temp (øC) IDM Max (@25øC Amb)450m Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb.125 V(GS)th Max. (V) I(DSS) Max. (A)200n @V(DS) (V) (Test Condition)240 @Temp (øC) (Test Condition)125 I(GSS) Max. (A)100n @V(GS) (V) (Test Condition) r(DS)on Max. (Ohms)20 @V(GS) (V American Microsemiconductor
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Abstract: BSS229 Transistors N-Channel Depletion MOSFET V(BR)DSS (V)250 V(BR)GSS (V)14 I(D) Max. (A)70m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb).21 Absolute Max. Power Diss. (W).63 Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb.200 V(GS)th Max. (V) I(DSS) Max. (A)100n @V(DS) (V) (Test Condition)250 @Temp (øC) (Test Condition)25 I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)20 r(DS)on Max. (Ohms American Microsemiconductor
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Abstract: DN2540N5 Transistors N-Channel Depletion MOSFET V(BR)DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)500m @Temp (øC)150 IDM Max (@25øC Amb)500m Absolute Max. Power Diss. (W)15# Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case8.3 Thermal Resistance Junc-Amb.70 V(GS)th Max. (V) I(DSS) Max. (A) @V(DS) (V) (Test Condition)25 @Temp (øC) (Test Condition)25 I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)20 r(DS)on Max. (Ohms)25 @V American Microsemiconductor
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