NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| DS1265W-150+ | Maxim Integrated Products | IC 1M X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA36, 0.740 INCH, ROHS COMPLIANT, DIP-36, Static RAM | 
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| DS1265W-100 | Maxim Integrated Products | IC 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36, 0.740 INCH, DIP-36, Static RAM |
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| DS1265W-150 | Maxim Integrated Products | IC 1M X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA36, 0.740 INCH, DIP-36, Static RAM |
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| DS1265W-100+ | Maxim Integrated Products | IC 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36, 0.740 INCH, ROHS COMPLIANT, DIP-36, Static RAM |
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| DS1265W-100IND | Maxim Integrated Products | IC 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36, 0.740 INCH, DIP-36, Static RAM |
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| Part | Manufacturer | Description | Type | Ordering |
| DS1265W | Dallas Semiconductor | 3.3V 8Mb Nonvolatile SRAM |
8 pages, |
Original | |
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| DS1265W-100 | Dallas Semiconductor | 3.3V 8Mb Nonvolatile SRAM |
8 pages, |
Original | |
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| DS1265W-100+ | Maxim Integrated Products, Inc. | 3.3V 8Mb Nonvolatile SRAM |
8 pages, |
Original | |
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| DS1265W-100IND | Maxim Integrated Products, Inc. | 8M Nonvolatile SRAM |
8 pages, |
Original | |
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| DS1265W-100-IND | Dallas Semiconductor | 3.3V 8Mb Nonvolatile SRAM |
8 pages, |
Original | |
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| DS1265W-100IND+ | Maxim Integrated Products, Inc. | 3.3V 8Mb Nonvolatile SRAM |
8 pages, |
Original | |
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| DS1265W-150 | Dallas Semiconductor | 3.3V 8Mb Nonvolatile SRAM |
8 pages, |
Original | |
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| DS1265W-150+ | Maxim Integrated Products, Inc. | 3.3V 8Mb Nonvolatile SRAM |
8 pages, |
Original | |
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| DS1265W-150-IND | Dallas Semiconductor | 3.3V 8Mb Nonvolatile SRAM |
8 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Rev: 122002 ERRATA SHEET DS1265W Revision B Errata The errata listed below describe situations where DS1265W revision B modules perform , , intends to correct these errata in subsequent die revisions. This errata sheet only applies to DS1265W , components. To obtain an errata sheet on another DS1265W die revision, visit our website at www.maxim-ic.com , ) falling edge (tAW) is less than 10ns, the DS1265W may not work correctly. Workaround: Allow at least ... | Original |
1 pages, |
DS1265W DS1265W abstract |
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| Abstract: ERRATA SHEET DS1265W 3.3V 8M Nonvolatile SRAM REVISION B ERRATA The errata listed below describe a situation where DS1265W revision B modules may perform differently than expected or differently than described in the data sheet. Dallas Semiconductor/Maxim intends to fix this errata in subsequent part revisions. This errata sheet only applies to DS1265W revision B modules. Revision B modules are , , the DS1265W may not work correctly. Work-around Allow at least 10ns (tAW) delay between ... | Original |
1 pages, |
DS1265W DS1265W abstract |
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| Abstract: DS1265W (TA: See Note 10; VCC = 3.3V ± 0.3V) AC ELECTRICAL CHARACTERISTICS DS1265W-100 PARAMETER Read Cycle Time Access Time SYMBOL tRC DS1265W-150 MIN MIN MAX 100 MAX , DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § PIN ASSIGNMENT 10 years , Write Enable - Output Enable - Power (+3.3V) - Ground - No Connect DESCRIPTION The DS1265W 8Mb , required for microprocessor interfacing. 1 of 8 110602 DS1265W READ MODE The DS1265 DS1265 devices ... | Original |
8 pages, |
DS1265W-150 DS1265W-100 DS1265W DS1265 DS1265W abstract |
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| Abstract: INDUSTRY'S HIGHEST DENSITY 3.3V NONVOLATILE SRAMs Densities up to 16Mb Protect Data for 3.3V Systems The DS1249W DS1249W, DS1265W, and DS1270W DS1270W are low-voltage, high-density NV SRAMs designed to preserve critical system data during power loss. Each of these dual in-line encapsulated modules operates on a , access times. The 2Mb DS1249W DS1249W is organized as 256k x 8; the 8Mb DS1265W is organized as 1024k x 8; and , 2Mb, 256k x 8 100 or 150 32-DIP 32-DIP Module DS1265W 8Mb,1024k x 8 100 or 150 36-DIP 36-DIP ... | Original |
1 pages, |
DS1270W DS1265W DS1249W 36-DIP 1024k 16MB SRAM DS1249W abstract |
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| Abstract: : 5ns ORDERING INFORMATION PART TEMP RANGE DS1265W-100+ DS1265W-100IND+ 0°C to +70°C , AC ELECTRICAL CHARACTERISTICS (TA: See Note 10; VCC = 3.3V ±0.3V) DS1265W-100 PARAMETER , 19-5617; Rev 11/10 DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES PIN , Write Enable - Output Enable - Power (+3.3V) - Ground - No Connect DESCRIPTION The DS1265W 8Mb , required for microprocessor interfacing. 1 of 8 DS1265W READ MODE The DS1265 DS1265 devices execute a ... | Original |
8 pages, |
DS1265W-100IND DS1265W-100 DS1265W DS1265 DS1265W abstract |
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| Abstract: : 5ns ORDERING INFORMATION Part Number DS1265W-100 DS1265W-100+ DS1265W-100IND DS1265W-100IND+ DS1265W-150 DS1265W-150+ Temperature Range 0°C to +70°C 0°C to +70°C -40°C to +85°C -40°C to +85°C , ELECTRICAL CHARACTERISTICS DS1265W-100 DS1265W-150 MIN PARAMETER SYMBOL MIN Read Cycle , DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § PIN ASSIGNMENT 10 years , Write Enable - Output Enable - Power (+3.3V) - Ground - No Connect DESCRIPTION The DS1265W 8Mb ... | Original |
8 pages, |
DS9034PCI DS9034PC DS1265W-150 DS1265W-100IND DS1265W-100 DS1265W DS1265 DS1265W abstract |
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| Abstract: DS1265W DS1270AB DS1270AB DS1270Y DS1270Y DS1270W DS1270W STMicroelectronics P/N M48Z02 M48Z02 M48Z12 M48Z12 M48Z08 M48Z08 M48Z18 M48Z18 M48Z35 M48Z35 ... | Original |
1 pages, |
TI Cross Reference Search DS1220AB DS1220AD DS1225AB DS1225AD DS1230AB DS1230W DS1230Y DS1245AB DS1245W DS1245Y DS1249AB M48Z512A sram cross reference datasheet abstract |
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| Abstract: : QuickView - Full (PDF) Data Sheet DS1265AB DS1265AB: QuickView - Full (PDF) Data Sheet DS1265W: QuickView - ... | Original |
7 pages, |
DS1230W DS1230AB DS1225Y DS1225AD DS1225AB DS1220Y DS1220AD DS1220AB BR2032 datasheet abstract |
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| Abstract: with Phantom Clock DS1265AB DS1265AB 8M Nonvolatile SRAM DS1265W 3.3V 8Mb Nonvolatile SRAM DS1265Y DS1265Y 8M ... | Original |
3 pages, |
panasonic BR1632 ML614 panasonic rechargeable coin battery BR1632 safety BR1632 panasonic msds DS1216 DS1220 DS1225 DS1230 DS1244 DS1245 DS1248 DS1216 abstract |
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| Abstract: ) component's typical weight is 7.5g, compared to the DS1265W (8Mb brick) weight of 13.3g (approximately a 45% ... | Original |
4 pages, |
SPM reliability DS2030AB DS2030L DS2030W DS2030Y DS2045AB DS2045L DS2045W DS2045Y DS2065W DS1265W datasheet abstract |
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| Part | Cross | Competitor Manufacturer | Details | Description |
| DS1265W Buy | HMN1M8DV Buy | HanBit | Benefits of the DS1265W over the HMN1M8DV | Single piece solution. Internal battery included in the Single Piece NV SRAM module, therefore second piece, i.e., Battery cap, not required. Part can be pick & placed using standard equipment. Part can be re-flowed using standard SMT processes. Part can be washed and dried, just like an IC. Our single piece NV SRAM family of parts have the same footprint, and therefore can grow in density without having to layout a new footprint. The Single Piece NV SRAMs with RTC also have the same footprints as the Single Piece NV SRAMs. Service life of this part is 2 to 3 times greater than the existing NV SRAMs in the market (PowerCap or ST or TI which offer 10yrs data retention in absence of VCC. |
| HMN1M8DV Buy | DS1265W Buy | HanBit | Benefits of the HMN1M8DV over the DS1265W | More Speed Grade Options Less Operate Current Less Standy Current |