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Part Manufacturer Description Datasheet BUY
TMS416169A-50DZ Texas Instruments 1MX16 EDO DRAM, 50ns, PDSO42 visit Texas Instruments
TMS664814-12DGE Texas Instruments 8MX8 CACHE DRAM, 8ns, PDSO54 visit Texas Instruments
TMS416169A-60DZ Texas Instruments 1MX16 EDO DRAM, 60ns, PDSO42 visit Texas Instruments
TMS426160 Texas Instruments IC FAST PAGE DRAM, Dynamic RAM visit Texas Instruments
TMS416100-10DZ Texas Instruments 16MX1 FAST PAGE DRAM, 100ns, PDSO24 visit Texas Instruments
TMS416800P-80DZ Texas Instruments 2MX8 FAST PAGE DRAM, 80ns, PDSO28 visit Texas Instruments

DRAM 18DIP

Catalog Datasheet MFG & Type PDF Document Tags

LR4802

Abstract: LR4087 480 8 Ceram ic CR 16DIP CM OS 2.5 to 6 0.7 150 4 CR 18DIP P ro c ess voltage (V) Standby cu rren t , . Oscillation frequency. (MHz) 16DIP 16DIP 18DIP 16DIP 202 208 212 218 Oscillator Package Page SHARP , C rystal o r Ceram ic O perating cu rren t (mA)3.5V MAX. Pulse 3 2 1.4 3 2 3.58M H z C rystal 18DIP 18DIP/20PLCC 28SD1P 28DIP 2 3 28SDIP 36Q FP/28SD IP 28DIP 28DIP 24DIP 20D IP 28DIP 20DIP T one 250 266 , , DRAM data m em ory W aveform coding system 8-melody w ith accom panim ent, E lectrom agnetic speaker
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LR3692 LH5006A LR3463 LR3428 LR3429 LR3441 LR4802 LR4087 alarm SL DIALER Diode SY 356 LH5821 LH5822 LH5823 LH5003 LH5004 LH5826

msm5232

Abstract: d2b bus Synchronous DRAM Synchronous Graphics RAM Graphic DRAM Small System Buffers Video Memories Field Memories Mask , -DIP, 32-SSOP, 28-QFJ 24-DIP, 32-SSOP, 28-QFJ 40-DIP, 44-QFP, 44-QFJ 28-DIP, 32-SSOP, 28-QFJ 18-DIP, 24 , MSM6542-1 MSM6542-2 MSM6542-3 MSM6782-01 MSM9070-02 MSM9070-03 Packages 16-DIP 18-DIP, 24-SOP 18-DIP, 24-SOP 18-DIP, 20-SOP,24-DIP, 24-SOP 8-DIP, 8-SOP 18-DIP, 24-SOP 16-DIP, 16-SOP Function 8/16-Bit RTC 8/16 , -DIP, 56L-QFP 44-QFP 22-DIP, 24-SOP 22-DIP, 24-SOP 18-DIP, 24-SOP 18-DIP, 24-SOP 32-SSOP 56S-QFP 56S-QFP 56S
OKI Electric Industry
Original
msm5232 d2b bus MSM5230 MSM6920 MSM7731-02 2016 RAM ISO9002 99J595RB

41C1000

Abstract: KM41C1000CJ-7 tC A C tR C CMOS DRAM GENERAL DESCRIPTION The Samsung KM41C1000C is a CMOS high speed 1,048 , 70ns 80ns Package 300 mil, 18DIP 300 mil, 20SOJ 400 mil, 20ZIP 20 TOSP(I) (Forward) 20 TOSP(I , CONFIGURATION (Top views) · KM41C1000CP O « ] V ss 1 3 0 CMOS DRAM · KM41C1000CJ DC 'i o w C 2 RAS I I , Dissipation Short Circuit Output Current Symbol V|N, VouT Vcc Tslg Pd CMOS DRAM Rating - 1 to + 7.0 - 1 , , W] Output Capacitance [Q] Symbol C|N1 C|N1 C|N3 C oU T CMOS DRAM Min - - Max 5 6
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KM41C1000C-6 KM41C1000C-8 KM41C1000CJ-7 41C1000 1mx1 DRAM DIP 41C100 KM41C1000C-7 KM41C1000CP-6 KM41C1000CP-7 KM41C1000CP-8
Abstract: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL , process. ORDERING INFORMATION Part No. 300 mil, 18DIP 60ns 70ns 80ns 300 mil, 20SOJ , ) 128 CMOS DRAM KM41C1000C PIN CONFIGURATION (Top Views) â KM41C1000CZ KM41C1000CJ , DRAM KM41C1000C CAPACITANCE (t a =25°C) Symbol Min Max Unit Input Capacitance [D , set-up time » : SA M SU N G Electronics 131 KM41C1000C CMOS DRAM AC CHARACTERISTICS (0 -
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KM41C1000CZ-6 KM41C1000CZ-7 KM41C1000CZ-8 KM41C1000CV-6 KM41C1000CV-7 KM41C1000CV-8

km41c1000cj-6

Abstract: KM41C1000C-7 150ns CMOS DRAM GENERAL DESCRIPTION The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 , 80ns 60ns 70ns 80ns 60ns 70ns 80ns Package 300 mil, 18DIP 300 mil, 20SOJ 400 mil, 20ZIP 20 , CMOS DRAM ' KM41C1000CZ Ag Q 20 H Vss 19 Q 18 C§ 17 NC 16 A® IF C 4 NC C 5 A«c 6 A , Dissipation Short Circuit Output Current Symbol VlN, VoUT Vcc Tslg Pd los Rating CMOS DRAM Units V V °c , ] Symbol C ini C ini C|N3 CoUT CMOS DRAM Min - - - Max 5 6 7 7 Unit pF pF PF pF -
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km41c1000cj-6 m4lc KM41C1000CJ-6 KM41C1000CJ-8 C1000CV-6 KM41C1000CVR-6 KM41C1000CVR-7 KM41C1000CVR-8

KM41C1000CJ-6

Abstract: KM41C1000cJ-7 SAMSUNG ELECTRONICS INC b?E J> m 7«îb4142 0G1S3Ã0 553 HSM6K KM41C1000C CMOS DRAM 1Mx1 Bit , . Access Time Package KM41C1000CP-6 60ns KM41C1000CP-7 70ns 300 mil, 18DIP KM41C1000CP-8 80 ns , Manufacturer SAMSUNG ELECTRONICS INC KM41C1000C b7E J> m 7%41i)2 0015301 im CMOS DRAM b?E D â  7Tb4142 , Respective Manufacturer SAMSUNG ELECTRONICS INC b7E D m 7^4142 0015302 32b HSMGK KM41C1000C_CMOS DRAM , ELECTRONICS INC b?E D â  7^4142 0015363 2b2 HSMGK KM41C1000C CMOS DRAM CAPACITANCE
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KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP6 KM41C1000CV 20-LEAD

KM41C1000CL-6

Abstract: 41C1000 KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 CMOS DRAM GENERAL DESCRIPTION tcAC 15ns 20ns 20ns tRC 110ns , 80ns 60ns 70ns 80ns Package FUNCTIONAL BLOCK DIAGRAM 300 mil. 18DIP 300 mil. 20SOJ 400 mil , ) , CMOS DRAM Rating - 1 to + 7.0 - 1 to + 7.0 - 5 5 to +150 600 50 ¡ Units V V °C mW mA Vcc Tstg , , CAS, W ] Output Capacitance [Q] CMOS DRAM Symbol C|N1 C,N> Min - - - Max 5 6
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1mx1 DRAM KM41C1000CL KM41C1000CLP-6 KM41C1OOOCLP-7 KM41C1000CLP-8 KM41C1000CLJ-6 KM41C1000CU-7
Abstract: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 Ã"S7 CMOS DRAM 1Mx1 Bit , , 18DIP KM41C1000CU-6 KM41C1000CU-7 KM41C1OOOCU-8 60ns 70ns 80ns 300 mil, 20SOJ ,   7 ^ 4 1 4 2 00153^8 7T3 M S M G K KM41C1000CL CMOS DRAM PIN CONFIGURATION (Top views) â , ' n b2T H S M G K KM41C1000CL CMOS DRAM ABSOLUTE MAXIMUM RATINGS* Parameter Rating , HISMGK KM41C1000CL CMOS DRAM CAPACITANCE (Ta =25°C) Sym bol Min Max U nit Input -
OCR Scan
KM41C1OOOCLP-6 KM41C1000CLP-7 KM41C1OOO 18-LEAD OG1SH11 GD1S412
Abstract: CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL , mil. 18DIP KM41C1000CSLJ-6 KM41C1000CSLJ-7 KM41C1000CSLJ-8 60ns 70ns 80ns 300 mil. 20SOJ , G Electronics 160 CMOS DRAM KM41C1000CSL PIN CONFIGURATION (Top views) ' , No Lead 161 CMOS DRAM KM41C1000CSL ABSOLUTE MAXIMUM RATINGS* Parameter Symbol , changed maximum once while CAS = Vih. «S S A M S U N G Electronics 162 CMOS DRAM -
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KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 KM41C1000CSLP-6 KM41C1000CSLP-7 KM41C1000CSLP-8

DRAM 18DIP

Abstract: KM41C1000CSL-6 SAMSUNG ELECTRONICS INC hl E * â  7^4142 0015414 ?hh BISMGK KM41C1000CSL CMOS DRAM Bit CMOS , -6 60ns KM41C1000CSLP-7 70ns 300 mil, 18DIP KM41C1OOOCSLP-8 80ns KM41C1000CSU-6 60ns KM41C1000CSU , Manufacturer SAMSUNG ELECTRONICS INC b?E D KM41C1000CSL b7E D â  7^4142 GÃ1S41S hTE CMOS DRAM ISI1GK , SAMSUNG ELECTRONICS INC b7E T> â  7^4142 DD1S41L 531 mSHGK KM41C1OOOCSL_CMOS DRAM ABSOLUTE MAXIMUM , 0015417 475 â  SMGK KM41C1000CSL CMOS DRAM CAPACITANCE (Ta-25°C) Parameter Symbol Min Max Unit Input
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DRAM 256kx4 100/A KM41C1000CSU-7 KM41C1000CSU-8 DD1S430
Abstract: tCAC tR C CMOS DRAM GENERAL DESCRIPTION The Samsung KM41C1000CSL is a CMOS high speed 1,048 , 70ns 80ns 60ns 70ns 80ns 60ns 70ns 80ns Package 300 mil. 18DIP 300 mil. 20SOJ 400 mil. 20ZIP , DC 1 O w C2 RÄSC 3 tfC 4 NCC 5 20 19 18 17 16 V ss CMOS DRAM · KM41C1000CSLZ A g O D 30 , Output Current Symbol V|N, VoUT Vcc T s tg CMOS DRAM Rating - 1 to + 7.0 - 1 to + 7 .0 - 5 5 to , ] O utput Capacitance [Q] Symbol ClN1 C|N2 C lN 3 CMOS DRAM Min - - - Max 5 6 7 7 -
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1000CS KM41C1OOOCSLP-6 KM41C1OOOCSLJ-7 KM41C1000CSLZ-6 KM41C1000CSLZ-7 KM41C1000CSLZ-8

KM41C1000CLP

Abstract: KM41C1000CLJ SAMSUNG ELECTRONICS INC b7E T> KM41C1000CL 7RbMmH 00153^7 Ã"S7 â  SNGK CMOS DRAM 1Mx1 Bit , , 18DIP KM41C1000CLP-8 80ns KM41C1000CU-6 60ns KM41C1000CU-7 70ns 300 mil, 20SOJ KM41C1000CU-8 80ns , "ib4142 00153^0 713 «SHGK KM41C1000CL CMOS DRAM PIN CONFIGURATION (Top Views) ' KM41C1000CLP ' KM41C1000CLJ , Respective Manufacturer SAMSUNG ELECTRONICS INC b7E T> KM41C1000CL 71L4142 DQlS3ciEl bET CMOS DRAM SMGK , INC b?E T> m 7^4142 0D1S400 171 HSMfiK KM41C1000CL CMOS DRAM CAPACITANCE (TA=25°C) Parameter Symbol
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samsung hv capacitor Scans-001144 DD1S413
Abstract: SAMSUNG ELECTRONICS INC b7E ] > 7 = ^ 4 1 4 2 0 0 1 5 4 1 4 7bb H S f l G K CMOS DRAM , mil, 18DIP KM41C1000CSU-6 KM41C1000CSU-7 KM41C1000CSU-8 60ns 70ns 80ns 300 mil, 20SOJ , DG15415 bT2 » S M G K KM41C1000CSL CMOS DRAM PIN CONFIGURATION (Top views) â KM41C1000CSLP , SAMSUNG ELECTRONICS INC fc,7E D â  7 ^ 4 1 4 5 D01S41b 53=1 « S M G K CMOS DRAM , DRAM CAPACITANCE -
OCR Scan

KM41C1000CSLP6

Abstract: T3D85 tc A C tR C CMOS DRAM GENERAL DESCRIPTION The Samsung KM41C1000CSL is a CMOS high speed 1,048 , 80ns 60ns 70ns 80ns Package 300 mil, 18DIP 300 mil, 20SOJ 400 mil, 20ZIP 20 TOSP(I , KM41C1000CSL PIN CONFIGURATION (Top Views) ' KM41C1000CSLP 0 w Iß ] Vss 17) Q 3U 31] a9 CMOS DRAM , DRAM Rating - 1 to + 7.0 - 1 to +7.0 - 5 5 to +150 600 50 Units V V °c mW mA Pd los , . 97 ELECTRONICS KM41C1000CSL CM OS DRAM CAPACITANCE (Ta =25°C) Parameter Input
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KM41C1000CSLP6 T3D85 47IlF T3D 8 KM41C1OOOCSLZ-6 KM41C1OOOCSLZ-8 KM41C1000CSLV-6 KM41C1000CSLV-7 KM41C1000CSLV-8 KM41C1000CSLVR-6

GM76C256all

Abstract: GMM794000BS70 FUNCTION GUIDE DRAM Capacity Org Type No Max Access Time tRAC tCAC tA A Current (mA) Active , 512cydes/8ms 18DIP(300) 20(26) SOJ (300) 20ZIP(400) 20DIP(300) 20(26) SOJ (300) 20 ZIP (400) NOW 1 , 27 FUNCTION GUIDE DRAM (Continued) Max Accesa Time Capacity ( >rg Type No tRAC 1 tCAC 4M Bit , DRAM (Continued) Capacity M ax Access Time O r* Type No tRAC 4M Bit 256KX16 GM71C4170AJ/AZ/AT/AR , /128ms (400) (Low Power) 29 FUNCTION GUIDE DRAM (Continued) Max Access Time Capacity ()rg Type
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LR-80 GM23C410 GM23C810QA-12 GM76C256all GMM794000BS70 GM71C18160A GM23C400 GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80

GM76C88AL FW

Abstract: 71C4260 FUNCTION GUIDE DRAM Capacity (>rg Type No Max Access Tim e tftAC 1M Bit 1Mx1 GM71C1000B/BJ/BZ , Package (mil) Avail Fast Page Mode 512cydes/8ms 18DIP{300) 20(26) SOJ NOW Fast Page Mode , DRAM (Continued) M a x Access Tim e Capacity (>rg tRAC tCAC 15 20 25 15 20 25 15 20 25 15 20 25 15 , /128ms (Low Power) 20 20 25 FUNCTION GUIDE DRAM (Continued) Max Access Time ('apacitv (>rg tR , Power) 44(50) TSOP I Fasi Page Mode -NORMAL 1024 cydes/128ms (400) ?9 FUNCTION GUIDE DRAM
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GM76C88AL FW 71C4260 GM23C32000 HR80 GM71G GM76C28A GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80

1000CLP

Abstract: tCAC tRC CMOS DRAM GENERAL DESCRIPTION The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 , 60ns 70ns 80ns Package FUNCTIONAL BLOCK DIAGRAM 300 mil, 18DIP 300 mil, 20SOJ 400 mil , DRAM R ating - 1 to + 7.0 - 1 to + 7 .0 - 5 5 to +150 600 50 Units V V °c mW mA Vcc Tstg Pd , KM41C1000CL CMOS DRAM CAPACITANCE (t a = 25 °C ) Param eter Input Capacitance [D] Input Capacitance , 35 0 15 40 0 81 ELECTRONICS KM41C1000CL CMOS DRAM 10%, See notes 1, 2) AC
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1000CLP KM41C 1000CLP-6 1000C KM41C1OOOCLZ-6 KM41C1000CLZ-7 KM41C1000CLZ-8
Abstract: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL , INFORMATION 60ns 70ns 80ns 300 m il. 18DIP 60ns 70ns 80ns 300 m il. 20SOJ KM41C1000CLZ , 80ns 20 TOSP (II) (Reverse) Part No. 144 CMOS DRAM KM41C1000CL PIN CONFIGURATION , Ao ⡠⡠145 CMOS DRAM KM41C1000CL ABSOLUTE MAXIMUM RATINGS , ._ «5 Electronics S U N G SAM ' CMOS DRAM KM41C1000CL CAPACITANCE (T a = 25 °C -
OCR Scan
20-LEAO
Abstract: b?E J m > SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 0Ã1S3ÃG SS3 KM41C1000C CMOS DRAM , 80ns 300 mil, 18DIP KM41C1OOOCJ-6 KM41C1000CJ-7 KM41C1OOOCJ-8 60ns 70ns 80 ns 300 mil , CMOS DRAM KM41C1000C PIN CONFIGURATION (Top view s) . w D C à S ]V K V ss 3 , SAMSUNG ELECTRONICS INC b?E D â  7t JfamM2 GD1S3Ã2 32b « S M G K KM41C1000C CMOS DRAM , b7E D â  7 ^ 4 1 4 2 Ã01S3Ã"3 2b2 « S M G K KM41C1000C CMOS DRAM CAPACITANCE (t a = -
OCR Scan

MSM7731-02

Abstract: TBA 931 -DIP, 44-QFP, 44-QFJ 28-DIP, 32-SSOP, 28-QFJ 18-DIP, 24-SOP, 20-QFJ Function 2048 bit SRAM with I/O and , -2 MSM6542-3 MSM6782-01 MSM9070-02 MSM9070-03 Packages 16-DIP 18-DIP, 24-SOP 18-DIP, 24-SOP 18-DIP, 20-SOP,24-DIP, 24-SOP 8-DIP, 8-SOP 18-DIP, 24-SOP 16-DIP, 16-SOP Function 8/16-Bit RTC 8/16-Bit RTC, calendar 8/16 , -DIP, 24-SOP 16-DIP, 24-SOP 144-QFP, 84-QFJ 42-DIP, 56L-QFP 44-QFP 22-DIP, 24-SOP 22-DIP, 24-SOP 18-DIP, 24-SOP 18-DIP, 24-SOP 32-SSOP 56S-QFP 56S-QFP 56S-QFP 42-DIP, 56L-QFP 42-DIP, 56L-QFP 16-SOP Function
OKI Electric Industry
Original
TBA 931 MsM82C59 P-BGA313-3535-1 MSM7705-02 OLMS65K OLMS-64 270MB ML670100 ML670K D-41460
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