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Part Manufacturer Description PDF Samples Ordering
TMS416800P-80DZ Texas Instruments IC 2M X 8 FAST PAGE DRAM, 80 ns, PDSO28, Dynamic RAM ri Buy
TMS416800P-60DZ Texas Instruments IC 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28, Dynamic RAM ri Buy
TMS416800P-70DZ Texas Instruments IC 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28, Dynamic RAM ri Buy

DRAM 18DIP

Catalog Datasheet Results Type PDF Document Tags
Abstract: 480 8 Ceram ic CR 16DIP 16DIP CM OS 2.5 to 6 0.7 150 4 CR 18DIP P ro c ess voltage (V) Standby cu rren t , frequency. (MHz) 16DIP 16DIP 16DIP 16DIP 18DIP 16DIP 16DIP 202 208 212 218 Oscillator Package Page SHARP»- , C rystal o r Ceram ic O perating cu rren t (mA)3.5V MAX. Pulse 3 2 1.4 3 2 3.58M H z C rystal 18DIP 18DIP/20PLCC 28SD1P 28SD1P 28DIP 28DIP 2 3 28SDIP 28SDIP 36Q FP/28SD FP/28SD IP 28DIP 28DIP 28DIP 28DIP 24DIP 24DIP 20D IP 28DIP 28DIP 20DIP 20DIP T one 250 266 , during m ute, DRAM data m em ory W aveform coding system 8-melody w ith accom panim ent, E lectrom ... OCR Scan
datasheet

8 pages,
216.02 Kb

LR34651 LR368 LR3692 lr3715 LR4087 LR40982 lz92e19 LZ2121 LZ1440 LZ1030 LR48063 LR3441 LR4802 LCD CHARACTER CODE LH5003 LH5006A datasheet abstract
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Abstract: FUNCTION GUIDE DRAM Capacity (>rg Type No Max Access Tim e tftAC 1M Bit 1Mx1 GM71C1000B/BJ GM71C1000B/BJ , Feature Package (mil) Avail Fast Page Mode 512cydes/8ms 18DIP{300) 20(26) SOJ NOW Fast , ) 27 FUNCTION GUIDE DRAM (Continued) M a x Access Tim e Capacity (>rg tRAC tCAC 15 20 25 15 , /128ms (Low Power) 20 20 25 FUNCTION GUIDE DRAM (Continued) Max Access Time ('apacitv (>rg tR , FUNCTION GUIDE DRAM (Continued) Capacity (>rg Max Access Time Type No tRAC 60 70 80 60 70 80 60 70 80 ... OCR Scan
datasheet

12 pages,
500.72 Kb

LR-80 GM76C88AL FW GM76C28A GM71G GM23C32000 71C4260 GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 GM71C1000B/BJ/BZ-60 abstract
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Abstract: FUNCTION GUIDE DRAM Capacity Org Type No Max Access Time tRAC tCAC tA A Current (mA) Active , 512cydes/8ms 18DIP(300) 20(26) SOJ (300) 20ZIP 20ZIP(400) 20DIP 20DIP(300) 20(26) SOJ (300) 20 ZIP (400) NOW 1 , 27 FUNCTION GUIDE DRAM (Continued) Max Accesa Time Capacity ( >rg Type No tRAC 1 tCAC 4M Bit , FUNCTION GUIDE DRAM (Continued) Capacity M ax Access Time O r* Type No tRAC 4M Bit 256KX16 256KX16 GM71C4170AJ GM71C4170AJ , DRAM (Continued) Max Access Time Capacity ()rg Type No tRAC 16M8rt 1Mc16 GM71V1616CWJ/AT-6 GM71V1616CWJ/AT-6 ... OCR Scan
datasheet

12 pages,
502.25 Kb

LR-80 GM76C28A GM23C810QA-12 GM23C400 16M-DRAM GM76C256all datasheet abstract
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Abstract: tC A C tR C CMOS DRAM GENERAL DESCRIPTION The Samsung KM41C1000C KM41C1000C is a CMOS high speed 1,048 , 80ns Package 300 mil, 18DIP 300 mil, 20SOJ 20SOJ 400 mil, 20ZIP 20ZIP 20 TOSP(I) (Forward) 20 TOSP(I , CONFIGURATION (Top views) · KM41C1000CP KM41C1000CP O « ] V ss 1 3 0 CMOS DRAM · KM41C1000CJ KM41C1000CJ DC 'i o w C 2 RAS I I , Dissipation Short Circuit Output Current Symbol V|N, VouT Vcc Tslg Pd CMOS DRAM Rating - 1 to + 7.0 - 1 , Capacitance [RAS, CAS, W] Output Capacitance [Q] Symbol C|N1 C|N1 C|N3 C oU T CMOS DRAM Min - - ... OCR Scan
datasheet

17 pages,
593.96 Kb

KM41C1000C-8 41C100 KM41C1000C-6 KM41C1000CJ-7 41C1000 KM41C1000C KM41C1000C abstract
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Abstract: SAMSUNG ELECTRONICS INC hl E * - 7^4142 0015414 ?hh BISMGK KM41C1000CSL KM41C1000CSL CMOS DRAM Bit CMOS , 70ns 300 mil, 18DIP KM41C1OOOCSLP-8 KM41C1OOOCSLP-8 80ns KM41C1000CSU-6 KM41C1000CSU-6 60ns KM41C1000CSU-7 KM41C1000CSU-7 70ns 300 mil, 20SOJ 20SOJ , KM41C1000CSL KM41C1000CSL b7E D - 7^4142 GÜ1S41S 1S41S hTE CMOS DRAM ISI1GK PIN CONFIGURATION (Top views) • KM41C1000CSLP KM41C1000CSLP » , ELECTRONICS INC b7E T> - 7^4142 DD1S41L DD1S41L 531 mSHGK KM41C1OOOCSL KM41C1OOOCSL_CMOS DRAM ABSOLUTE MAXIMUM RATINGS* Parameter , Respective Manufacturer SAMSUNG ELECTRONICS INC b7E D m 7TbmHS 0015417 475 - SMGK KM41C1000CSL KM41C1000CSL CMOS DRAM ... OCR Scan
datasheet

17 pages,
600.73 Kb

KM41C1000CSL-8 KM41C1000CSL-7 KM41C1000CSL-6 DRAM 18DIP datasheet abstract
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Abstract: SAMSUNG ELECTRONICS INC b?E J> m 7«îb4142 0G1S3-0 553 HSM6K KM41C1000C KM41C1000C CMOS DRAM 1Mx1 Bit CMOS , KM41C1000CP-6 KM41C1000CP-6 60ns KM41C1000CP-7 KM41C1000CP-7 70ns 300 mil, 18DIP KM41C1000CP-8 KM41C1000CP-8 80 ns KM41C1000CJ-6 KM41C1000CJ-6 60ns KM41C1000CJ-7 KM41C1000CJ-7 , b7E J> m 7%41i)2 0015301 im CMOS DRAM b?E D - 7Tb4142 0015301, T71 - SflGK PIN CONFIGURATION (Top , HSMGK KM41C1000C KM41C1000C_CMOS DRAM ABSOLUTE MAXIMUM RATINGS* Parameter Symbol Rating Units Voltage on Any , SAMSUNG ELECTRONICS INC b?E D - 7^4142 0015363 2b2 HSMGK KM41C1000C KM41C1000C CMOS DRAM CAPACITANCE ... OCR Scan
datasheet

17 pages,
583.5 Kb

KM41C1000CP6 km41c1000 KM41C1000C-7 DRAM 18DIP KM41C1000CJ-8 KM41C1000CP-7 KM41C1000CP-8 KM41C1000CP-6 KM41C1000C-6 KM41C1000C-8 KM41C1000cJ-7 KM41C1000CJ-6 0G153 0G153 abstract
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Abstract: SAMSUNG ELECTRONICS INC b7E T> KM41C1000CL KM41C1000CL 7RbMmH 00153^7 "S7 - SNGK CMOS DRAM 1Mx1 Bit CMOS , KM41C1000CLP-6 KM41C1000CLP-6 60ns KM41C1000CLP-7 KM41C1000CLP-7 70ns 300 mil, 18DIP KM41C1000CLP-8 KM41C1000CLP-8 80ns KM41C1000CU-6 KM41C1000CU-6 60ns , SAMSUNG ELECTRONICS INC b?E * - 7"ib4142 00153^0 713 «SHGK KM41C1000CL KM41C1000CL CMOS DRAM PIN CONFIGURATION (Top , DRAM SMGK ABSOLUTE MAXIMUM RATINGS* Parameter Symbol Rating Units Voltage on Any Pin Relative to , 0D1S400 0D1S400 171 HSMfiK KM41C1000CL KM41C1000CL CMOS DRAM CAPACITANCE (TA=25°C) Parameter Symbol Min Max Unit Input ... OCR Scan
datasheet

17 pages,
598.4 Kb

KM41C1000CL-8 KM41C1000CL-7 KM41C1000CL-6 DRAM 18DIP KM41C1000CLJ datasheet abstract
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Abstract: tCAC tR C CMOS DRAM GENERAL DESCRIPTION The Samsung KM41C1000CSL KM41C1000CSL is a CMOS high speed 1,048 , 80ns 60ns 70ns 80ns 60ns 70ns 80ns Package 300 mil. 18DIP 300 mil. 20SOJ 20SOJ 400 mil. 20ZIP 20ZIP 20 , RÄSC 3 tfC 4 NCC 5 20 19 18 17 16 V ss CMOS DRAM · KM41C1000CSLZ KM41C1000CSLZ A g O D 30 CÂS NC A » , s tg CMOS DRAM Rating - 1 to + 7.0 - 1 to + 7 .0 - 5 5 to +150 600 50 Units V V °c mW mA , 3 CMOS DRAM Min - - - Max 5 6 7 7 Unit pF pF pF pF COUT AC CHARACTERISTICS (0 ... OCR Scan
datasheet

16 pages,
516.06 Kb

KM41C1000CSL KM41C1000CSL abstract
datasheet frame
Abstract: CMOS DRAM GENERAL DESCRIPTION The Samsung KM41C1000C KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic , 80ns 60ns 70ns 80ns 60ns 70ns 80ns Package 300 mil, 18DIP 300 mil, 20SOJ 20SOJ 400 mil, 20ZIP 20ZIP 20 , CMOS DRAM ' KM41C1000CZ KM41C1000CZ Ag Q 20 H Vss 19 Q 18 C§ 17 NC 16 A® IF C 4 NC C 5 A«c 6 A , Dissipation Short Circuit Output Current Symbol VlN, VoUT Vcc Tslg Pd los Rating CMOS DRAM Units V V °c , ] Symbol C ini C ini C|N3 CoUT CMOS DRAM Min - - - Max 5 6 7 7 Unit pF pF PF pF - ... OCR Scan
datasheet

16 pages,
500.26 Kb

KM41C1000C-6 km41c1000cj-6 KM41C1000C-7 KM41C1000C KM41C1000C-8 KM41C1000C abstract
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Abstract: tc A C tR C CMOS DRAM GENERAL DESCRIPTION The Samsung KM41C1000CSL KM41C1000CSL is a CMOS high speed 1,048 , 60ns 70ns 80ns Package 300 mil, 18DIP 300 mil, 20SOJ 20SOJ 400 mil, 20ZIP 20ZIP 20 TOSP(I) (Forward) 20 , KM41C1000CSL KM41C1000CSL PIN CONFIGURATION (Top Views) ' KM41C1000CSLP KM41C1000CSLP 0 w Iß ] Vss 17) Q 3U 31] a9 CMOS DRAM , DRAM Rating - 1 to + 7.0 - 1 to +7.0 - 5 5 to +150 600 50 Units V V °c mW mA Pd los , . 97 ELECTRONICS KM41C1000CSL KM41C1000CSL CM OS DRAM CAPACITANCE (Ta =25°C) Parameter Input ... OCR Scan
datasheet

17 pages,
582.75 Kb

T3D 8 KM41C1000CSL KM41C1000CSL abstract
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Datasheet Content (non pdf)

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Multi-Function ADPCM Recorder, 2MBit DRAM, 512kBit ROM 32-TSOP 32-TSOP 32-TSOP 32-TSOP (1) 4 ~ 10.6 -/- 128 sec -40dB/oct. , Stand alone, MCU I/F 56S-QFP 56S-QFP 56S-QFP 56S-QFP 4 ~ 16 up to 32MBit Serial Register or DRAM 34 min. -40dB Recorder, Stand alone, MCU I/F 56S-QFP 56S-QFP 56S-QFP 56S-QFP 64-TQFP 64-TQFP 64-TQFP 64-TQFP 4 ~ 16 up to 32MBit Serial Register or DRAM 34 -10 ~ +70°C MSM6585 MSM6585 MSM6585 MSM6585 ADPCM, upgrade for MSM5205 MSM5205 MSM5205 MSM5205 18-DIP, 24-SOP 24-SOP 24-SOP 24-SOP, Chip 4 ~ 32 MSM6650 MSM6650 MSM6650 MSM6650 Eva OTP Adapter Parallel Writer 18-DIP, 24-SOP 24-SOP 24-SOP 24-SOP, Chip 4 ~ 32 16.9sec 12-bit
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