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DRA3114T*

Catalog Datasheet Results Type PDF Document Tags
Abstract: DRA3114T_IC-VCE DRA3114T_PT-Ta PT Ta Collector current IC (mA) 75 50 -600 礎 -80 -500 礎 , -10 DRA3114T_IO-VIN -10 Output current IO (mA) -1 VIN IO -100 VO = -5 V -30癈 VO = - 0.2 V Ta = 85癈 -1 25癈 -10-1 Ta = 85癈 -100 DRA3114T_VIN-IO IO VIN , VCE = -10 V Collector-emitter voltage VCE (V) DRA3114T_VCEsat-IC -10 -2 Input voltage VIN , IC (mA) 2 hFE IC -120 125 0 DRA3114T_hFE-IC IC VCE -100 -10-3 0 - ... Original
datasheet

4 pages,
429.22 Kb

ZJH00305BED DRC3114T DRA3114T 2002/95/EC 2002/95/EC abstract
datasheet frame
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). DRC3114T DRC3114T Silicon NPN epitaxial planar type For digital circuits Complementary to DRA3114T Features Package Packaging Code SSSMini3-F2-B Name Pin 1: Base 2: Emitter 3: Collector Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Symbol Rating ... Original
datasheet

4 pages,
426.93 Kb

ZJH00332BED DRC3114T drc3114 DRA3114T 2002/95/EC 2002/95/EC abstract
datasheet frame
Abstract: : November 2012 Ver. DED 1 DRA3114T DRA3114T_PT-Ta DRA3114T_IC-VCE DRA3114T_hFE-IC PT Ta IC , -1 -10 -100 Ambient temperature Ta (癈) DRA3114T_VCEsat-IC Collector-emitter voltage VCE (V) DRA3114T_IO-VIN Collector current IC (mA) DRA3114T_VIN-IO VCE(sat) IC IO VIN VIN , DRA3114T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC3114T DRC3114T , V-0 / MSL: Level 1 compliant) Unit: mm Marking Symbol: LD Packaging DRA3114T0L Embossed type ... Original
datasheet

4 pages,
560.38 Kb

DRA3114T DRC3114T DRA9114T UL-94 DRA3114T abstract
datasheet frame
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). DRAF114T DRAF114T Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF114T DRCF114T DRA3114T in ML3 type package Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, mount area reduction Eco-friendly Halogen-free package Package Code ML3-N4-B Package dimension clicks here. Click! Packaging DRAF114T0L DRAF114T0L Embossed type ... Original
datasheet

2 pages,
233.44 Kb

2002/95/EC DRAF114T DRCF114T DRA3114T 2002/95/EC abstract
datasheet frame
Abstract: DB2W604 DB3J316F DD5X062J UNR4213 UNR4213 DRC4144E DRC4144E NS-A1-B,NS-B1-B C8 UNR31A5G UNR31A5G DRA3114T SSSMini3-F2-B C15 UNR4214 UNR4214 ... Original
datasheet

86 pages,
1344.93 Kb

DRC3144 FM6L5202 DSC5001 DB21320 MTM68423 DA3DF40 DZ2S068C MA3DF50 db3x DSK3J02 DSC3F01 dg3d501 DB2U308 SSMini2-F5-B 2PG011 datasheet abstract
datasheet frame
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). DRA3114T (Tentative) Silicon PNP epitaxial planar type For digital circuits Absolute Maximum Ratings Ta = 25癈 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating � � �0 100 150 � to +150 , with the RoHS Directive (EU 2002/95/EC 2002/95/EC). DRA3114T SSSMini3-F2-B Unit: mm 0.30 -0.02 3 ... Original
datasheet

3 pages,
191.51 Kb

2002/95/EC DRA3114T 2002/95/EC abstract
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