| Fulltext Datasheet Results |
1 - 15 of about 15 for DM05A |
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First line: 310M SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. .0p# 3.6m 3.6m 1.8m 175A 175A 15 OA 175A 175A * L80 T012 T012 L18b L18b DM 40 41 42 DM02B DM02B Â » DM03B DM03B * DM05A* 500m 500m 500m 500m 500m 500m 6.0A 6.OA 5.5A 30 30 30 70 70 30 30m 30m 30m 1 .On 1 .On 1 .On 100f 100f 100f 100f 1 .On 15 15 15 15 15 15 SOOulZl 5oou0 2 .. Tags: 310M datasheet abstract.. |
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First line: silicon epitaxial mesa diode microwave switch DM01B CA3036 L0NA DM02B SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 13p# 10p# 2.0p# 3.6m 3.6m 1.8m 175A 175A 15 OA 175A 175A * L80 T012 T012 L18b L18b DM 40 41 42 DM02B DM02B » DM03B DM03B * DM05A* 500m 500m 500m 500m 500m 500m 6.0A 6.OA 5.5A 30 30 30 70 70 30 30m 30m 30m 1 .On 1 .On 1 .On 100f 100f 100f 100f 1 .On 15 15 15 15 15 15 SOOulZl .. Tags: DM02B L0NA CA3036 DM01B silicon epitaxial mesa diode microwave switch datasheet abstract.. |
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First line: DM01B 2N676 ft4017* D16P4* MA3232 SYMBOLS CODES EXPLAINED SYMBOLS CODES COMMON MORE THAN TECHNICAL SECTION LINE Type Revised Specificaions Non-JEDEC manufacured ouside U'S.A. TYPE Swiching ype, also lised Secion Chopper, also lised Secion Caegory These ypes also included elsewhere oher characerisics Abstract: .. 73 74 75 DM05A » DM06A DM06A * EM500 EM500 11 11 11 P-MOS P-MOS N Ge- L53 L54 Si Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT 1-2 50mV 50mV . Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT .. Tags: MA3232 D16P4* ft4017* 2N676 DM01B datasheet abstract.. |
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First line: 2N5417 2N3836 BD264A SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 13p# 10p# 2.0p# 3.6m 3.6m 1.8m 175A 175A 15 OA 175A 175A * L80 T012 T012 L18b L18b DM 40 41 42 DM02B DM02B » DM03B DM03B * DM05A* 500m 500m 500m 500m 500m 500m 6.0A 6.OA 5.5A 30 30 30 70 70 30 30m 30m 30m 1 .On 1 .On 1 .On 100f 100f 100f 100f 1 .On 15 15 15 15 15 15 SOOulZl .. Tags: BD264A 2N3836 2N5417 datasheet abstract.. |
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First line: 2N725 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 13p# 10p# 2.0p# 3.6m 3.6m 1.8m 175A 175A 15 OA 175A 175A * L80 T012 T012 L18b L18b DM 40 41 42 DM02B DM02B » DM03B DM03B * DM05A* 500m 500m 500m 500m 500m 500m 6.0A 6.OA 5.5A 30 30 30 70 70 30 30m 30m 30m 1 .On 1 .On 1 .On 100f 100f 100f 100f 1 .On 15 15 15 15 15 15 SOOulZl .. Tags: 2N725 datasheet abstract.. |
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First line: NS3041 ma7805 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 13p# 10p# 2.0p# 3.6m 3.6m 1.8m 175A 175A 15 OA 175A 175A * L80 T012 T012 L18b L18b DM 40 41 42 DM02B DM02B » DM03B DM03B * DM05A* 500m 500m 500m 500m 500m 500m 6.0A 6.OA 5.5A 30 30 30 70 70 30 30m 30m 30m 1 .On 1 .On 1 .On 100f 100f 100f 100f 1 .On 15 15 15 15 15 15 SOOulZl .. Tags: ma7805 NS3041 datasheet abstract.. |
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First line: CA3036 BF123 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sections) Abstract: .. 73 74 75 DM05A » DM06A DM06A * EM500 EM500 11 11 11 P-MOS P-MOS N Ge- L53 L54 Si Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT 1-2 50mV 50mV . Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT .. Tags: BF123 CA3036 datasheet abstract.. |
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First line: CA3036 NS1000 n SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Section Abstract: .. 73 74 75 DM05A » DM06A DM06A * EM500 EM500 11 11 11 P-MOS P-MOS N Ge- L53 L54 Si Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT 1-2 50mV 50mV . Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT .. Tags: NS1000 n CA3036 datasheet abstract.. |
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First line: FV918 CA3036 L14B 2SC634 DM02B SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technic Abstract: .. 73 74 75 DM05A » DM06A DM06A * EM500 EM500 11 11 11 P-MOS P-MOS N Ge- L53 L54 Si Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT 1-2 50mV 50mV . Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT .. Tags: DM02B 2SC634 L14B CA3036 FV918 datasheet abstract.. |
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First line: K1502 K1502* CA3036 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 73 74 75 DM05A » DM06A DM06A * EM500 EM500 11 11 11 P-MOS P-MOS N Ge- L53 L54 Si Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT 1-2 50mV 50mV . Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT .. Tags: CA3036 K1502* K1502 datasheet abstract.. |
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First line: CA3036 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sections) avoid Abstract: .. 73 74 75 DM05A » DM06A DM06A * EM500 EM500 11 11 11 P-MOS P-MOS N Ge- L53 L54 Si Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT 1-2 50mV 50mV . Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT .. Tags: CA3036 datasheet abstract.. |
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First line: CA3036 silicon epitaxial mesa diode microwave switch SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Typ Abstract: .. 73 74 75 DM05A » DM06A DM06A * EM500 EM500 11 11 11 P-MOS P-MOS N Ge- L53 L54 Si Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT 1-2 50mV 50mV . Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT .. Tags: silicon epitaxial mesa diode microwave switch CA3036 datasheet abstract.. |
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First line: CA3036 ST25A 2N904 2N906 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Dat Abstract: .. 73 74 75 DM05A » DM06A DM06A * EM500 EM500 11 11 11 P-MOS P-MOS N Ge- L53 L54 Si Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT 1-2 50mV 50mV . Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT .. Tags: 2N906 2N904 ST25A CA3036 datasheet abstract.. |
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First line: CA3036 2sa525 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sections) Abstract: .. 73 74 75 DM05A » DM06A DM06A * EM500 EM500 11 11 11 P-MOS P-MOS N Ge- L53 L54 Si Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT 1-2 50mV 50mV . Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT .. Tags: 2sa525 CA3036 datasheet abstract.. |
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First line: CA3036 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 73 74 75 DM05A » DM06A DM06A * EM500 EM500 11 11 11 P-MOS P-MOS N Ge- L53 L54 Si Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT 1-2 50mV 50mV . Pd 225mW 225mW each side ;yfs 1-2 100umho 100umho ;Ciss 1-2 20fF 20fF ;VT .. Tags: CA3036 datasheet abstract.. |
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