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DM01B Datasheet, Circuit, PDF, Cross Reference, & Application Note Results
Datasheet Search Results 1 - 1 of about 1 for DM01B
ID 1 DM01B N/A Discontinued Transistor Data Book 1975 340.2 Kb,  4 Pages. PDF Download
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Fulltext Datasheet Results 1 - 11 of about 11 for DM01B
ID 1 First line: DM01B 2N676 ft4017* D16P4* MA3232 SYMBOLS CODES EXPLAINED SYMBOLS CODES COMMON MORE THAN TECHNICAL SECTION LINE Type Revised Specificaions Non-JEDEC manufacured ouside U'S.A. TYPE Swiching ype, also lised Secion Chopper, also lised Secion Caegory These ypes also included elsewhere oher characerisics Abstract: .. MOS FET has interacted over Voltaae clamp diode;Pt 1.8W Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B DM02B » DM03B DM03B * 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b L18b Pd 225mW 225mW each side ;yfs 1-2 32umho 32umho ;Ciss ..  Tags: MA3232 D16P4* ft4017* 2N676 DM01B   datasheet abstract.. 201.41 Kb 2 Pages OCR Scan PDF Download
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ID 2 First line: silicon epitaxial mesa diode microwave switch DM01B CA3036 L0NA DM02B SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. MOS FET has interacted over Voltaae clamp diode;Pt 1.8W Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B DM02B » DM03B DM03B * 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b L18b Pd 225mW 225mW each side ;yfs 1-2 32umho 32umho ;Ciss ..  Tags: DM02B L0NA CA3036 DM01B silicon epitaxial mesa diode microwave switch   datasheet abstract.. 358.74 Kb 4 Pages OCR Scan PDF Download
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ID 3 First line: CA3036 BF123 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sections) Abstract: .. MOS FET has interacted over Voltaae clamp diode;Pt 1.8W Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B DM02B » DM03B DM03B * 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b L18b Pd 225mW 225mW each side ;yfs 1-2 32umho 32umho ;Ciss ..  Tags: BF123 CA3036   datasheet abstract.. 395.61 Kb 4 Pages OCR Scan PDF Download
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ID 4 First line: CA3036 NS1000 n SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Section Abstract: .. MOS FET has interacted over Voltaae clamp diode;Pt 1.8W Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B DM02B » DM03B DM03B * 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b L18b Pd 225mW 225mW each side ;yfs 1-2 32umho 32umho ;Ciss ..  Tags: NS1000 n CA3036   datasheet abstract.. 393.78 Kb 4 Pages OCR Scan PDF Download
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ID 5 First line: FV918 CA3036 L14B 2SC634 DM02B SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technic Abstract: .. MOS FET has interacted over Voltaae clamp diode;Pt 1.8W Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B DM02B » DM03B DM03B * 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b L18b Pd 225mW 225mW each side ;yfs 1-2 32umho 32umho ;Ciss ..  Tags: DM02B 2SC634 L14B CA3036 FV918   datasheet abstract.. 384.53 Kb 4 Pages OCR Scan PDF Download
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ID 6 First line: K1502 K1502* CA3036 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. MOS FET has interacted over Voltaae clamp diode;Pt 1.8W Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B DM02B » DM03B DM03B * 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b L18b Pd 225mW 225mW each side ;yfs 1-2 32umho 32umho ;Ciss ..  Tags: CA3036 K1502* K1502   datasheet abstract.. 412.34 Kb 4 Pages OCR Scan PDF Download
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ID 7 First line: CA3036 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sections) avoid Abstract: .. MOS FET has interacted over Voltaae clamp diode;Pt 1.8W Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B DM02B » DM03B DM03B * 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b L18b Pd 225mW 225mW each side ;yfs 1-2 32umho 32umho ;Ciss ..  Tags: CA3036   datasheet abstract.. 388.08 Kb 4 Pages OCR Scan PDF Download
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ID 8 First line: CA3036 silicon epitaxial mesa diode microwave switch SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Typ Abstract: .. MOS FET has interacted over Voltaae clamp diode;Pt 1.8W Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B DM02B » DM03B DM03B * 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b L18b Pd 225mW 225mW each side ;yfs 1-2 32umho 32umho ;Ciss ..  Tags: silicon epitaxial mesa diode microwave switch CA3036   datasheet abstract.. 400.34 Kb 4 Pages OCR Scan PDF Download
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ID 9 First line: CA3036 ST25A 2N904 2N906 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Dat Abstract: .. MOS FET has interacted over Voltaae clamp diode;Pt 1.8W Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B DM02B » DM03B DM03B * 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b L18b Pd 225mW 225mW each side ;yfs 1-2 32umho 32umho ;Ciss ..  Tags: 2N906 2N904 ST25A CA3036   datasheet abstract.. 395.76 Kb 4 Pages OCR Scan PDF Download
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ID 10 First line: CA3036 2sa525 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sections) Abstract: .. MOS FET has interacted over Voltaae clamp diode;Pt 1.8W Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B DM02B » DM03B DM03B * 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b L18b Pd 225mW 225mW each side ;yfs 1-2 32umho 32umho ;Ciss ..  Tags: 2sa525 CA3036   datasheet abstract.. 389.34 Kb 4 Pages OCR Scan PDF Download
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ID 11 First line: CA3036 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. MOS FET has interacted over Voltaae clamp diode;Pt 1.8W Derate at 1 4.4mW/'C. 70 71 72 DM01B* DM02B DM02B » DM03B DM03B * 11 11 11 P-MOS P-MOS P-MOS L1 8b L1 8b L18b L18b Pd 225mW 225mW each side ;yfs 1-2 32umho 32umho ;Ciss ..  Tags: CA3036   datasheet abstract.. 404.41 Kb 4 Pages OCR Scan PDF Download
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Specsheet Results  
Specsheet 0 DM01B American Microsystems  Independent Transistor Array - YFS(1-2) 32uMHO,C 20fF  Specification
Specsheet Data

 

 

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