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Part Manufacturer Description Datasheet BUY
1N4001-T Diodes Incorporated Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2 visit Digikey
1N4001G-T Diodes Incorporated Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2 visit Digikey
1N4001G SMC Diode Solutions Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 visit Digikey
1N4001-G Comchip Technology Corporation Ltd Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2 visit Digikey
1N4001-TP Micro Commercial Components Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2 visit Digikey
1N4001TA SMC Diode Solutions DIODE GEN PURP 50V 1A DO41 visit Digikey

DIODE+1N4001

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: LED AC1 D1 12V AC D2 1N4001 1N4001 D3 D4 1N4001 1N4001 L1 220uH , D2 1N4001 1N4001 D3 D4 L1 220uH AC2 1N4001 U1 1N4001 8 7 6 R1 , 12V AC D2 1N4001 1N4001 D3 D4 L1 150uH AC2 1N4001 8 DC 7 R1 1 SC IPK 6 2 U2 U1 1N4001 SE T Cap Vcc 5 Com p Lumiled1 1 2 C1 , 1A DO-41 ON Semi 1N4001 D2 1 Diode 50V 1A DO-41 ON Semi 1N4001 D3 ON Semiconductor
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MC34063 driver led AC Transformer 12V MC34063 current source LED DRIVER BY MC34063 mc34063 led circuit mc34063 MC34063 1N5817 ACE1101 MC34063AP1 EEU-FC1H101 C315C471K1G5CA
Abstract: 330n 100n 100n 10n 1n/2000V 10n EXT COM RJ45 POWER PIO BUS Battery 1N4001 1N4001 1N4001 1N4001 1N4001 1N4001 10/100 RESET RTS1 CTS1 Beschreibung Keramikkondensator 100n, RM2,54 , Netzteilbuchse Pfostenfeldstecker 2x8 Pfostenfeldstecker 2x8 2 polige Stiftleiste, RM2,54 Diode 1N4001 Diode 1N4001 Diode 1N4001 Diode 1N4001 Diode 1N4001, SMT, Minimelf Diode 1N4001, SMT, Minimelf Jumper 2 LINS Technologies
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FS22-101Y4 MAX202 DIODE 1N4001 1n4001 diode 1N4001 SMT 100nF Kondensator Kondensator 1206 Rm2 tr1 SC12/SC13 RS232 10/100MB PCF8583 TG110-S050N2
Abstract: 1N4001~1N4007 1.0A Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Plastic material ­ UL recognition flammability classification 94V ­ , reverse voltage = DC blocking voltage Test Conditions Type 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 , Excel Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3d, 1-Jan-2006 1/3 1N4001 , FaxBack +86-512-66607370 Rev. 3d, 1-Jan-2006 2/3 1N4001~1N4007 Dimensions in mm DIMENSIONS INCHES Excel Semiconductor
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CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics 1N4007 OF DIODE CHARACTERISTICS DIODE 1N4006 DIODE 1N4001 VALUE OF MAX CURRENT surge current DIODE 1N4007
Abstract: 1N4001/L­1N4007/L Vishay Lite­On Power Semiconductor 1.0A Rectifier Features D Diffused , Conditions Type 1N4001/L 1N4002/L 1N4003/L 1N4004/L 1N4005/L 1N4006/L 1N4007/L Peak forward , =1MHz Type 1N4001/L­4004/L 1N4005/L­4007/L Symbol VF IR IR CD CD RthJA Min 15 8 100 Max 1 5 50 1 (4) 1N4001/L­1N4007/L Vishay Lite­On Power Semiconductor Characteristics (Tj , ) Figure 2. Typ. Forward Current vs. Forward Voltage 15574 Tj = 25°C f = 1 MHz 1N4001 ­ 1N4004 Vishay Intertechnology
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1N4007 BL diode LT 1n4007 1N4004 LITEON 1N4007 liteon 1n4004 bl l4007 1N4001/L 88/540/EEC 91/690/EEC D-74025
Abstract: 1N4001~1N4007 1.0A Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Plastic material â'" UL recognition flammability classification , Value Unit Repetitive peak reverse voltage 1N4001 VRRM 50 V = Working peak reverse , 1N4001~1N4007 IFAV â'" Average forward current (A) IFSM â'" Peak forward surge current (A , Semiconductor www.excel-semi.com FaxBack +86-512-67606917 Rev. 3a, 1-Jun-2004 2/3 1N4001~1N4007 Excel Semiconductor
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Abstract: 1N4001 â'" 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! , . Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C. 1N4001 â'" 1N4007 1 of 4 © 2006 , Junction Capacitance 1N4001 â'" 1N4007 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION , standard RS-296-E. 1N4001 â'" 1N4007 3 of 4 © 2006 Won-Top Electronics ORDERING INFORMATION Product No. Package Type Shipping Quantity 1N4001-T3 DO-41 5000/Tape & Reel 1N4001 Won-Top Electronics
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diode 1N4001 specifications MIL-STD-202 1N4006-T3 5000/T 1N4006-TB 1N4007-T3 1N4007-TB
Abstract: 1N4001 ­ 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused , Reverse Voltage of 4.0V D.C. 1N4001 ­ 1N4007 1 of 4 © 2006 Won-Top Electronics 1.0 10 , 1N4001 ­ 1N4007 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION TAPING SPECIFICATIONS , material: plastic or metal. 2. Components are packed in accordance with EIA standard RS-296-E. 1N4001 ­ , Shipping Quantity 1N4001-T3 DO-41 5000/Tape & Reel 1N4001-TB DO-41 5000/Tape & Box Won-Top Electronics
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free diode 1n4001 specifications of 1n4007 diode 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DIODE 1N4001 WORKING 1N4001 DIODE SPECIFICATIONS 1N4001-TB-LF
Abstract: 1N4001 G/L- 1N4007G/L Vishay Lite-On Power Semiconductor 1.0A Glass Passivated Rectifier , voltage =Working peak reverse voltage =DC Blocking voltage Test Conditions Type 1N4001 G/L 1 N4002 G , PF K/W !r !r trr CD RthJA Rev. A2, 24-Jun-98 1N4001 G/L- 1N4007G/L Vishay Lite-On Power , 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4 ) Rev. A2, 24-Jun-98 1N4001 G , (4 ) 1N4001 G/L- 1N4007G/L Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy -
OCR Scan
N4003 N4004 N4006 n4004 diode n4005 N4002 diode N4003GL diode n4002 N4005 N4007G
Abstract: Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 List List , Rectifiers 1N4001 THRU 1N4007 1.0A Axial Leaded General Purpose Rectifiers - 50V-1000V Package outline , parts, ex. 1N4001-H. .107(2.7) .080(2.0) DIA. .205(5.2) .166(4.2) Mechanical data â'¢ Epoxy , reverse voltage *3 VR (V) 1N4001 50 35 100 70 I FSM 30 A 200 140 200 , curves (1N4001 THRU 1N4007) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE Formosa MS
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DS-222111 MIL-STD-750D METHOD-2031 MIL-STD-202F METHOD-208 METHOD-211A
Abstract: SILICON RECTIFIER DIODE ia / i o o ~ io o o v 1N4001- 1N4007 FEATURES ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0 High Surge Capability ° 52mm Inside , wave, non-repetitive 1N4001 1M4002 1N4003 1N4004 1N4005 1N4006 1N4007 50 125 100 250 200 400 400 600 , Ambient Max. 0.9 50 5 91 Unit V .«A "C/W Tj = 25°C 1N4001~ 1N4003 1N4004 ~ 1N4007 ( R f t Hhon Inter Bectw rto Cotporotton B04 1N4001- IN 4007 FIG. 1-FORWARD VOLTAGE FIG -
OCR Scan
1N4007 operating frequency DIODE 1N4001 RESISTANCE IC 1N4007 1N4001 SILICON diode 1N4007 diode frequency current rating diode 1N4001 1N4001--
Abstract: Silicon Rectifier Formosa MS 1N4001 THRU 1N4007 List List , Date 2010/03/10 Revision Page. C 6 Silicon Rectifier Formosa MS 1N4001 THRU , parts, ex. 1N4001-H. .205(5.2) .166(4.2) Mechanical data 1.0(25.4) MIN. .034(.9) â , ) 1N4001 50 35 100 70 CJ 200 140 200 1N4004 400 280 400 1N4005 , curves (1N4001 THRU 1N4007) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE Formosa MS
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1N4001 rectifier silicon diode 1N4001 specifications IL-STD-202F METHOD-1026 METHOD-1027 METHOD-1036 JESD22-A102 METHOD-1056
Abstract: 1N4001 â'" 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused , Reverse Voltage of 4.0V D.C. 1N4001 â'" 1N4007 1 of 4 © 2006 Won-Top Electronics 1.0 10 , 1N4001 â'" 1N4007 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION TAPING , RS-296-E. 1N4001 â'" 1N4007 3 of 4 © 2006 Won-Top Electronics ORDERING INFORMATION Product No. Package Type Shipping Quantity 1N4001-T3 DO-41 5000/Tape & Reel 1N4001 Won-Top Electronics
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Abstract: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List , Date - Revision A Page. 6 Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 1.0A , RRM (V) *3 VR (V) 1N4001 50 35 100 70 200 140 200 1N4004 400 , - Revision A Page. 6 Rating and characteristic curves (1N4001 THRU 1N4007) FIG , Silicon Rectifier 1N4001 THRU 1N4007 Pinning information Pin Pin1 Pin2 Simplified outline Formosa MS
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1N4007 RECTIFIER DIODE data sheet 1N4007 diode diode cross reference 1N4002 diode 1N4007 specifications diode rectifier 1n4001 DIODE 1N4004 METHOD-2036 METHOD-1051 METHOD-4066-2 METHOD-1038 METHOD-1031 METHOD-215
Abstract: ® 1N4001 thru 1N4007 Pb Free Plating Product Pb 1N4001 thru 1N4007 1.0 Ampere DO-41 Package Silicon Diode DO-41 Features Unit: inch(mm) â'¢ Low forward voltage drop â'¢ High current capability â'¢ High surge current capability .034(.86) 1.0(25.4)MIN. .028(.71) .205 , by 20%. Symbols 1N4001 Parameter 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Units Maximum , ://www.thinkisemi.com/ 1N4001 thru 1N4007 ® Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http Thinki Semiconductor
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Abstract: Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 List List , Rectifiers 1N4001 THRU 1N4007 1.0A Axial Leaded General Purpose Rectifiers - 50V-1000V Package outline , parts, ex. 1N4001-H. .107(2.7) .080(2.0) DIA. .205(5.2) .166(4.2) Mechanical data â'¢ Epoxy , =1MHz and applied 4V DC reverse voltage *3 VR (V) 1N4001 50 35 100 70 200 140 , 6 Rating and characteristic curves (1N4001 THRU 1N4007) FIG.1-TYPICAL FORWARD FIG Formosa MS
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diode cross reference 1N4007 METHOD-1021
Abstract: SILICON RECTIFIER DIODE IA/IOO~IOOOV 1N4001~1N4007 FEATURES â'¢ Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability o 52mm Inside Tape Spacing Package , Dimensions in mm (Inches) Approx. Net Weight: 0.33 Grams Voltage Rating TYPE Symbol 1N4001 1N4002 , Condition IFM = 1.0A Ti = 25 °C VRM = VRRM Tj = 25°C 1N4001 1N4003 1N4004 ~ 1N4007 Junction to , Material Copyrighted By Its Respective Manufacturer 1N4001~1N4007 FIG. 1 -FORWARD VOLTAGE VS. FORWARD -
OCR Scan
LN4007 diode ln4007 LN4004 diode LN4004 DIODE 1N4001 rating 1N4005 operating frequency D00230T 000231G
Abstract: Silicon Rectifier 1N4001 THRU 1N4007 List Formosa MS List , Rectifier 1N4001 THRU 1N4007 1.0A Axial Leaded General Purpose Rectifiers - 50V-1000V Features · Axial , "-H" indicates Halogen-free parts, ex. 1N4001-H. .205(5.2) .166(4.2) Mechanical data · Epoxy , C/W pF O C SYMBOLS 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 *3 VR (V) 50 100 200 , and characteristic curves (1N4001 THRU 1N4007) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD Formosa MS
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OF 1N4001 DIODE Diode Marking 1N4004 1N4007 10A features of DIODE 1N4001 1N4001 silicon THOD-208
Abstract: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-41 PACKAGE Low cost SERIES 1N4001 - 1N4007 DO - 41 Low leakage LL Low , current by 20%. PARAMETER (TEST CONDITIONS) RATINGS SYMBOL Series Number 1N4001 1N4002 , 1N4001 - 1N4007 50 40 30 Single Phase, Half wave, 60 Hz Resistive and Inductive Loads Lead Diotec
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1N4007 diode DIODE 1N4007 diode 1n4007 diotec GPDP-101-2B
Abstract: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 1 AMP GENERAL PURPOSE SILICON DIODES MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-41 PACKAGE Low cost SERIES 1N4001 - 1N4007 , Series Number 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Maximum DC Blocking Voltage VRM , RATING & CHARACTERISTIC CURVES FOR SERIES 1N4001 - 1N4007 1.2 1.0 Peak Forward Surge Current Diotec
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Abstract: D1 R4 1k + C2 330 u F /16V 1N5819 RS 0.2 D2 A 1N4001 R3 27 C3 100nF 8 , when the power source U1 is switched off. For the 1N4001 diode, used in this design, the typical , CONTROL (from Controller) 1N4745A R6 100 A D2 1N4001 1 2 S2 C3 33nF U2 8 , Electrolytic Capacitor Electrolytic Capacitor Ceramic Schottky Diode, 1N5819 Diode, 1N4001 Switch , Diode, 1N5819 Diode, 1N4001 Zener Diode, 1N4745A Switch Switch Inductor, TEC2674 IC, LM2575-ADJ Motorola
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MC33341 1N4001 zener diode Car Battery 12V pulse charger diode 1n5819 1N4001 general diode sample schematic diagram 12v battery charger LM2575 step up converter AN1593/D AN1593
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