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ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
ISL58315CRTZ-T13 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL58315CRTZ Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy

DIODE germanium 0A91

Catalog Datasheet MFG & Type PDF Document Tags

DIODE 0A91

Abstract: 0A91 0A91 J\_ POINT CONTACT DIODE Germanium diode in all-glass DO-7 envelope intended for general purposes. QUICK REFERENCE DATA Continuous reverse voltage VR max. 90 V Repetitive peak reverse voltage vrrm max. 115 V Forward current (d.c.) if max. 50 mA Repetitive peak forward current 'frm max. 150 mA , . 190 mA 60 to 450 /¿A 2 June 1979 Point contact diode OA91 0A91 2 June 1979 , . ] | June 1979 0A91 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134
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sx3704

Abstract: BRC157 Germanium Diode S ilicon Diode D15 S ilicon Diode V D12 S ilicon Diode Germanium Diode , ) Diode CLASSIFIED 1S44 BA128 BA154 w 1N4148 v ITT44 U35063/2 / Germanium Gold-Bonded Diode S ilicon Diode Y933 V D21 D17 Fast S ilicon Diod Germanium Diode HS9078 , ITT2003/XK3030 D26 D19 S ilicon Diode S6M1 Bias Diodi D23 Germanium Diode OA91 i C1129 , . . Base Base Base Base Base Base Base D D D D D A A AF7 Germanium PNf
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sx3704 BRC157 Germanium Diode aa143 BRC-116 1n4148 ITT TRANSISTOR BC147 VT701 R2540 VT702 1N4005 BZX83-C30 BZX79-C30

DIODE 0A91

Abstract: Germanium Diode OA91 OA91 GERMANIUM DIODE Germanium diode in subminiature all glass DO-7 construction for general purposes. MECHANICAL DATA DO-7 jj Dimensions in mm K rollâ'" not tinned 2*»w* TL 25.41"1" 7.6" 2 max T f\ 25.4mir mln. mounting width 13 The coloured band indicates the cathode side RATBAGS (Limiting values according to the Absolute Maximum System as defined in IEC publication 134) Average , 260 MA typ. 75 typ. 190 JUA 10 to 275 60 to 450 M 2 March 1968 0A91 2 March 1968 OA 91
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DIODE 0A91 Germanium Diode OA91 OA91 diode DIODE germanium 0A91 OA91 germanium DIODE OA91

axial zener diodes marking code c3v6

Abstract: ZENER DIODES CODE ID CHART O -35 5 0 / 75 4150 200 * | I 200 GERMANIUM - GENERAL USEAGE TUNGSTEN POINT , 1 ) 10 GERMANIUM - DETECTION AA 113 AA IN IN D 3-7 119 541 542 SPECO E , AND SCR»s (Contd)° DEVICE TYPE SFD* 104 (0A90) SFD. 108 (0A91) SFDo 122 (0A47) SFD 3 118A IN
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axial zener diodes marking code c3v6 ZENER DIODES CODE ID CHART H 48 zener diode diode zener ph c5v6 diode zener BZX 61 C 10 74151N BR705A BR71A BR72A BR74A BR76A BR78A

T35W

Abstract: transistor kt 606A a highly stable sili­ con diode for use in switching, computer, logic, and other high-speed , VARIABLE CAPACITANCE DIODE (Fig. 2) More and more, voltage variable capacitance diodes are being specified , Germanium Germanium Germanium Germanium Germanium TO-3 TO-3 TO-36 TO-5 TO-5 PNP PNP PNP PNP , A m p lifie r TR08 TR09 TR10 TR11 TR12 Germanium Germanium Germanium Germanium Germanium TO-5 TO-5 TO-5 TO-1 TO-1 NPN NPN NPN PNP PNP Medium Power General Purpose A m p
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T35W transistor kt 606A sr 6863 D CS9011 2SC965 AH3505 10DB2P 10DB4P 10DB6P D200MP IRTR-51 991991T1

GFB7400D

Abstract: EF184 MOS integrated circuits Linear integrated circuits Tran sisto rs Germanium low/medium transistors Germanium high power transistors N-P-N silicon low/medium power transistors P-N -P silicon low/medium , 42 43 43 44 44 44 22 22 28 29 30 D iodes Germanium point contact diodes Germanium , diodes Silicon picoampere diode Fast recovery low power rectifier diodes Low power silicon rectifier , BZY88CBV2 8ZY88C15 GEM3 GEM4 0A91 BZY88C3V3 BZY8BC3V6 BZY8BC3V9 B2Y88C4V3 BZY88C9V1 82Y88C10
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GFB7400D EF184 Rifa pmr 2026 ITT A2610 Mullard Mullard quick reference guide RIFA 0,022 pme 285 250v

st178

Abstract: diode E1110 Figure 19 Germanium general purpose 75 volt P.R.V.â'"Replaces 1N34A, 1N60, 1N295, etc. ECG110 Figure 19 Germanium matched pairâ'"Replaces 1N541, 1N542, etc. ECG111 Figure 20 Use ECG112 , Figure 21 Selenium dual diode common cathode TV horizontal AFCâ'"Replaces D4, DO-4, DDO-4, etc. ECG114 Figure 21 Selenium dual diode series connected TV horizontal AFCâ'"Replaces D5, DO-5, DDO-5, etc. ECG115 Figure 21 Selenium dual diode common anode TV horizontal AFCâ'"Replaces D6, DO
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st178 diode E1110 CK705 TE1088 ME1120 CS1237 ECG303 8M-26102 66X0003-001 68X0003-001 CX-9000 T-E0317

Tr431

Abstract: 18DB6A S35 A TSC Description Diode -160 PIV Rectifier - 200 PIV Rectifier - 450 PIV PRECEDING MANUFACTURER , '" Cadmium sulfide A â'" Diffused GA â'" Gallium arsenide â'" Gold bonded Ge â'" Germanium t â'" Indium , '" Available to MIL spec. , diode 2 â'" Base turn off UNDER USE Section 11 1 â'" UHF mixer 2 â'" Photodiode (Si & Ge devices
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Tr431 18DB6A 1N1525 B1274 transistor cs1256hg BSF17 25T12 Z1012 Z1014 Z1018 AA138 AA140

Germanium Diode aa116

Abstract: 20680 JRC CONSTRUCTION N-channel N P-channel P Ge Germanium Silicon Si represent the extreme capabilities of the device
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Germanium Diode aa116 20680 JRC 110B6 Germanium itt 1N21 itt zx15