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Part Manufacturer Description Datasheet BUY
TIBPAL22V10-20MFKB Texas Instruments High-Performance Impact-X Programmable Array Logic Circuits 28-LCCC -55 to 125 visit Texas Instruments
TIBPAL22V10-20MWB Texas Instruments High-Performance Impact-X<TM> Programmable Array Logic Circuits 24-CFP -55 to 125 visit Texas Instruments
TIBPAL22V10-20MJTB Texas Instruments High-Performance Impact-X Programmable Array Logic Circuits 24-CDIP -55 to 125 visit Texas Instruments
5962-8605304KA Texas Instruments High-Performance Impact-X<TM> Programmable Array Logic Circuits 24-CFP -55 to 125 visit Texas Instruments
5962-86053043A Texas Instruments High-Performance Impact-X Programmable Array Logic Circuits 28-LCCC -55 to 125 visit Texas Instruments
5962-8605304LA Texas Instruments High-Performance Impact-X Programmable Array Logic Circuits 24-CDIP -55 to 125 visit Texas Instruments

DIODE V10-20

Catalog Datasheet MFG & Type PDF Document Tags

IPA50R500CE

Abstract: DIODE V10-20 .13 Hard Commutation on Conducting Body Diode , .20 3 500V CoolMOSTM CE Application Note AN 2012-04 V1.0 April 2012 1 Introduction TM , benefits FEATURES Reduced energy stored in output capacitance (Eoss) High body diode ruggedness Reduced , . 2.2.2 BJT (Bipolar Junction Transistor)-Effect If the body diode conducts in forward direction, minority carriers remaining in the base region during diode recovery can cause a BJT action with
Infineon Technologies
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voltage divider rule

Abstract: 7404E-09 .19 5.1.3 Energetische class="hl">20 5.1.4 Electrical class="hl">20 , .21 Table of figures FIGURE 1: CALCULATION BASICS FROM LUMINANCE TO DIODE CURRENT , .8 FIGURE 3: CALCULATION BASICS FROM ILLUMINANCE TO DIODE CURRENT .9 FIGURE 4: CALCULATION BASICS FROM LUMINOUS INTENSITY TO DIODE CURRENT
MAZeT
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SOT23-6

Abstract: SSF3420 Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID25 6.3 ID70 4.8 IDM 20 A PD 1.6 W TJ,TSTG -55 To 150 RJA 78 /W Drain , (ON) VGS=4.5V, ID=5.5A 26 33 m VGS=10V, ID=6.3A 20 25 m VDS=10V,ID , Charge Qgd 2 nC Body Diode Reverse Recovery Time Trr 18 nS Body Diode Reverse , DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.3A 0.8 1.2 V
Silikron Semiconductor
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diode S3A

Abstract: Standard Recovery Power Diode Features: â'¢â'ƒ â'¢â'ƒ â'¢â'ƒ â'¢â'ƒ â'¢â'ƒ â'¢â'ƒ For , Specifications: Diode Type Diode Configuration Forward Current If(AV) Forward Voltage VF Max. Reverse Recovery Time trr Max Forward Surge Current Ifsm Max Diode Case Style No. of Pins Diode Polarity , inductive load. For capacitive load, derate current by 20%. Type Number S3A S3D S3G S3J , www.farnell.com www.newark.com Page 05/11/12 V1.0 Standard Recovery Power Diode Type Number
Multicomp
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Abstract: 50mm (2.0 INCH) 5x7 DOT MATRIX DISPLAY Part Number: TBC20-12EGWA High Efficiency Red Green Features Description 2.0 inch matrix height. The High Efficiency Red source color devices are made , operation. Light Emitting Diode. High contrast and light output. The Green source color devices are made with Gallium Stackable horizontally. Phosphide Green Light Emitting Diode. Easy mounting , [2] Forward Voltage High Efficiency Red Green 2.0 2.2 2.5 2.5 V IF=20mA IR Kingbright
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DSAA7449 APR/02/2011
Abstract: 50mm (2.0 INCH) 5x7 DOT MATRIX DISPLAY Part Number: TBA20-11EGWA High Efficiency Red Green Features Description 2.0 inch matrix height. The High Efficiency Red source color devices are made , operation. Light Emitting Diode. High contrast and light output. The Green source color devices are made with Gallium Stackable horizontally. Phosphide Green Light Emitting Diode. Easy mounting , [2] Forward Voltage High Efficiency Red Green 2.0 2.2 2.5 2.5 V IF=20mA IR Kingbright
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DSAA5923

SSFK3208

Abstract: GEMPAK5060 Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID(25 , =10V, ID=11A 6.5 9 m VDS=5V,ID=11A 20 S 1200 PF 300 PF ON CHARACTERISTICS , Charge Qgs 3.2 nC Gate-Drain Charge Qgd 3.8 nC Body Diode Reverse Recovery Time Trr 24 nS Body Diode Reverse Recovery Charge Qrr 27 nC VDS=15V,ID=12A,VGS=10V IF=12A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD
Silikron Semiconductor
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SSFK3208 GEMPAK5060
Abstract: devices are made with Gallium Phosphide Green Light Emitting Diode. The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. Package , Viewing Angle [1] 21/2 60° Typ. 100 40 White Diffused 50 20 Electrical / Optical , Yellow Green Yellow Green Yellow Green Yellow Typ. 565 590 568 588 30 35 15 20 2.2 2.1 2.5 2.5 10 10 Max Kingbright
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L-59CB/1GYW DSAA5863 NOV/11/2010
Abstract: Parameter Description Value Unit VDC maximum DC supply voltage ±20 V IG , a TVS diode connected between the auxiliary collector and the gate of an IGBT module. When the Collector-Emitter voltage exceeds the diode breakdown voltage the diode current sums up with the current from the , -8/+15V operation, the datasheet value of QGE needs to be reduced by 20%. Due to the PCB temperature , Eoff [mJ] 19.2 23 DUT3 12.2 20 Compared to the datasheet values, the measured Eoff values are Infineon Technologies
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AN2012-04 MA3L120E07 BAT165 ZXTN2010Z ZXTP2012Z SP000979670

SSFK3204

Abstract: GEMPAK5060 Gate-Source Charge Qgs 8 nC Gate-Drain Charge Qgd 15 nC Body Diode Reverse Recovery Time Trr 20 nS Body Diode Reverse Recovery Charge Qrr 5 nC VDS=15V,ID=15A,VGS=10V IF=15A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD , Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID(25 , (nC) Figure 11 Gate Charge ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode
Silikron Semiconductor
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SSFK3204

transistor smd bc rn

Abstract: SMD transistor y11 primarily designed. A. B. C. D. E. F. G. H. L. N. P. Q. R. S. T. U. X. Y. Z. Diode: signal, low power Diode: variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor: power, high frequency Optocoupler , . thyristor) Transistor: power switching Diode: multiplier, e.g. varactor, step recovery Diode: rectifier
Infineon Technologies
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transistor smd bc rn SMD transistor y11 g21 SMD Transistor SMD Transistor Y12 SMD transistor BC RN transistor ic equivalent book EHA07040 EHA07041
Abstract: ) 3.5 A ID(70) 2.8 A IDM 20 A PD 2.0 W TJ,TSTG -55 To 150 RJA , Gate-Drain Charge Qgd 3 nC Body Diode Reverse Recovery Time Trr 27 nS Body Diode , DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.7A 1.2 V , Charge ©Silikron Semiconductor CO.,LTD. Figure 12 Source- Drain Diode Forward 4 http Silikron Semiconductor
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SSF6670

TSOP-6

Abstract: SSF3428 nC Gate-Source Charge Qgs 1.8 nC Gate-Drain Charge Qgd 1.5 nC Body Diode Reverse Recovery Time Trr 20 nS Body Diode Reverse Recovery Charge Qrr 12 nC VDS=15V,ID=6A,VGS=10V IF=1.7A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage , 30 V Gate-Source Voltage VGS ±20 V ID25 6 A ID70 4.8 A IDM 30 , . Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com v1.0 ID- Drain Current (A
Silikron Semiconductor
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SSF3428 TSOP-6 DIODE 30V TSOP DIODE 30V TSOP-6
Abstract: with one common lead. Light Emitting Diode. Long life-solid state reliability. The Yellow , Yellow Light Emitting Diode. Package Dimensions Notes: 1. All dimensions are in millimeters , 100 20 High Efficiency Red (GaAsP/GaP) L-59EYW Typ. 2 1/2 40 60° White Diffused , Yellow 15 20 pF VF=0V;f=1MHz VF [2] Forward Voltage High Efficiency Red Yellow 2 Kingbright
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DSAB0671 DEC/21/2010
Abstract: made with Gallium 3 leads with common lead. Phosphide Green Light Emitting Diode. Black case , . Emitting Diode. Housing UL rating:94V-0. Housing material: type 66 nylon. RoHS compliant. Package , ) [2] @ 20mA Lens Type Viewing Angle [1] Min. 50 100 20 Green (GaP) L-59CB/1GYW , Half-width Green Yellow 30 35 nm IF=20mA C Capacitance Green Yellow 15 20 pF Kingbright
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Abstract: Pre-trimmed leads for pc board mounting. Phosphide Green Light Emitting Diode. Black case enhances , Phosphide on Gallium Phosphide Yellow Light Housing UL rating:94V-0. Emitting Diode. Housing , Selection Guide Part No. Dice Iv (mcd) [2] @ 20mA Lens Type Min. Typ. 7 25 7 20 , Capacitance Green Yellow 15 20 pF VF=0V;f=1MHz VF [2] Forward Voltage Green Yellow Kingbright
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L-130WCP/2GYW DSAA8167 MAY/03/2010

KAF-5060PBESEEVGC

Abstract: RELIABLE AND RUGGED. Light Emitting Diode. WATER CLEAR LENS. The Hyper Orange source color devices are made with LOW POWER CONSUMPTION. DH InGaAlP on GaAs substrate Light Emitting Diode. ONE , PACKAGE. SiC Light Emitting Diode. CAN PRODUCE ANY COLOR IN VISIBLE SPECTRUM, Static electricity , 20 38 nm IF=20mA C Capacitance Blue Hyper Orange Green 110 25 45 pF VF=0V;f=1MHz VF Forward Voltage Blue Hyper Orange Green 3.7 2.0 3.5 4.3 2.5 4.5 V
Kingbright
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KAF-5060PBESEEVGC DSAB5759 MAR/13/2005
Abstract: device is made with AlGaInP (on GaAs substrate) light emitting diode chip. The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1. All , Bright Yellow Green Super Bright Yellow Green Typ. 590 574 590 570 20 20 20 15 2 2.1 2.5 2.5 10 10 Max Kingbright
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KPTB-1612SYKCGKC DSAC0137 APR/23/2010
Abstract: Low power consumption. GaAs substrate) light emitting diode chip. Ideal for backlight and , available. GaAs substrate Light Emitting Diode. Package : 1500pcs / reel. Moisture sensitivity level , =20mA Spectral Line Half-width Super Bright Yellow Green 20 20 nm IF=20mA C Capacitance Super Bright Yellow Green 20 15 pF VF=0V;f=1MHz VF [2] Forward Voltage Super Bright Kingbright
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KPBD-3224SYKCGKC DSAC2538
Abstract: made with Gallium Aluminum Arsenide Red Light Emitting Diode. The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. Package Dimensions Notes: 1. All , 20 30 45 15 1.85 2.2 2.5 2.5 10 10 Max. Units nm nm nm pF V uA Test Conditions IF=20mA IF=20mA IF Kingbright
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L-119SRSGWT-CC DSAA4625 APR/17/2010
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