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US1JDF-13 Diodes Incorporated Rectifier Diode visit Digikey Buy
US1J-13-F Diodes Incorporated Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, GREEN, PLASTIC, SMA, 2 PIN visit Digikey Buy
US1JDFQ-13 Diodes Incorporated Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, GREEN, PLASTIC, D-FLAT-2 visit Digikey Buy
US1J-E3/5AT Vishay Semiconductors Diode Switching 600V 1A 2-Pin SMA T/R visit Digikey Buy
US1J-E3/61T Vishay Semiconductors Diode Switching 600V 1A 2-Pin SMA T/R visit Digikey Buy
US1JHE3_A/I Vishay Semiconductors DIODE FAST REC 600V 1A DO214AC visit Digikey Buy

DIODE US1J

Catalog Datasheet MFG & Type PDF Document Tags

UC3818

Abstract: BSS133 Connector : 7-pin, 2.54mm pitch CNT2 1 17 DIODE : US1J D1,SD2,SD3,SD4 4 18 FAN , VREF R21 1 470 K2 AC2 VTR-250 TP5 TP 1 11 1 D1 US1J PCFN-112 4 10 , : SVC471D RV1 1 67 Voltage detector : KA431A SD5 1 68 Zener Diode : 1N4734A, 5.6V D12 1 69 Bridge Diode : DF08S D5 1 Feb. 2006 FAIRCHILD SEMICONDUCTOR ­ System
Fairchild Semiconductor
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EI-1916 UC3818 BSS133 uc3818 Application Note kw pfcm 120- 5 diode zener fz 5.6v KA78M12 KRC102 SMBJ170 15ARMS

DIODE US1J

Abstract: Diode marking us1j . UNIT Cd diode capacitance US1A to US1G US1J THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a , US1J f = 1MHz; Tj = 25 °C. Fig.8 Diode capacitance as a function of reverse voltage; typical , (IEC 134). SYMBOL VRRM US1A US1B US1D US1G US1J VR continuous reverse voltage US1A US1B US1D US1G US1J VRMS root mean square voltage US1A US1B US1D US1G US1J IF(AV) average forward current averaged over any , PARAMETER forward voltage US1A to US1G US1J IR reverse current IF = 1 A; see Fig.4 see Fig.5 VR = VRRMmax
Philips Semiconductors
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DIODE US1J Diode marking us1j marking of US1J diode US1J us1jf DO-214AC

US1G diode

Abstract: DIODE US1J ; Tj = 25 °C. Fig.9 10 VR (V) 102 US1J f = 1 MHz; Tj = 25 °C. Fig.8 1 Diode , 400 V US1J - 600 V US1A - 50 V US1B - 100 V US1D - 200 V US1G - 400 V US1J - 600 V US1A - 35 V US1B - 70 V , 420 V - 1 A continuous reverse voltage root mean square voltage US1J IF(AV , .4 - 1.1 V US1J see Fig.5 - 1.4 V reverse current VR = VRRMmax; see Figs 6
Philips Semiconductors
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US1G diode M3D168 MSA474

diode SMA marking code 14

Abstract: DIODE US1J US1D - 200 V US1G - 400 V US1J - 600 V Vr continuous reverse voltage US1A - 50 V US1B - 100 V US1D - 200 V US1G - 400 V US1J - 600 V vrmS root mean square voltage US1A - 35 V US1B - 70 V US1D - 140 V US1G - 280 V US1J - 420 V if(AV) average forward current , PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage If = 1 A; USIAto US1G see Fig.4 - 1.1 V US1J , A; measured at Ir = 0.25 A; see Fig. 12 - 50 ns Cd diode capacitance VR = 4 V; f = 1 MHz
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OCR Scan
diode SMA marking code 14 diode SMA marking 14

DIODE US1J

Abstract: us1j diode ) Part Number Table Description Part Number Diode, Ultra-Fast, 1A, 50V US1A Diode, Ultra-Fast, 1A, 100V US1B Diode, Ultra-Fast, 1A, 200V US1D Diode, Ultra-Fast, 1A, 400V US1G Diode, Ultra-Fast, 1A, 600V US1J Diode, Ultra-Fast, 1A, 800V US1K Diode, Ultra-Fast, 1A , US1B US1D US1G US1J US1K US1M Maximum Recurrent Peak Reverse Voltage VRRM 50 , .1 US1x Series Ratings and Characteristic Curves (US1A, US1B, US1D, US1G, US1J, US1K, US1M) Maximum
Multicomp
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us1j diode diode 400v 0.5a US1M 61 ULtra FAST diode SMB/DO-214AC MIL-STD-750
Abstract: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface , DO-214AC (SMA) Diode variations Case: DO-214AC (SMA)ï'  Molding compound meets UL 94 V , 25 °C unless otherwise noted) PARAMETER SYMBOL US1A US1B US1D US1G US1J US1K , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com , US1D US1G US1J 1.0 US1K US1M 1.7 V 10 IR UNIT μA 50 Maximum Vishay Semiconductors
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J-STD-020 AEC-Q101 J-STD-002 22-B102 2011/65/EU 2002/95/EC
Abstract: US1A, US1B, US1D, US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor Surface , DO-214AC (SMA) Diode variations Case: DO-214AC (SMA)ï'  Molding compound meets UL 94 V , SYMBOL Device marking code US1A US1B US1D US1G US1J US1K US1M UNIT UA UB , , US1G, US1J, US1K, US1M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS , blocking voltage SYMBOL TA = 100 °C US1D US1G US1J 1.0 US1K US1M 1.7 V 10 Vishay General Semiconductor
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JS709A
Abstract: -214AC (SMA) Diode variations Case: DO-214AC (SMA)ï'  Molding compound meets UL 94 V-0 flammability , US1B US1D US1G US1J US1K US1M UNIT UA UB UD UG UJ UK UM , US1D US1G US1J US1K US1M UNIT 1.0 A VF (1) TA = 25 °C Maximum DC reverse currentï'  at , US1D US1G US1J US1K US1M UNIT RJA (1) 75 RJL (1) Maximum thermal resistance 27 , 25 °C US1J thru US1M 0.01 0.2 0 1 TJ = 150 °C 10 100 0.7 1.2 1.7 2.2 Vishay General Semiconductor
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general semiconductor diode marking ug

Abstract: Package DO-214AC (SMA) Diode variations Single die MECHANICAL DATA Case: DO-214AC (SMA)ï , RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL US1B US1D US1G US1J US1K , TA = 100 °C US1D US1G US1J 1.0 US1K US1M 1.7 V 10 IR UNIT μA , RJA Maximum thermal resistance US1J UNIT °C/W Note PCB mounted on 0.2" x 0.2" (5.0 mm x , TJ = 125 °C 10 TJ = 100 °C 1 US1J thru US1M 0.1 TJ = 25 °C 0.01 0.5 0.7
Vishay Intertechnology
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general semiconductor diode marking ug
Abstract: ® US1A â'" US1M 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       Ideally Suited for , %. Characteristic Symbol Average Rectified Output Current US1G US1J US1K US1M Unit 50 100 , US1A â'" US1D 0.1 US1J â'" US1M 0.01 0 IFSM, PEAK FORWARD SURGE CURRENT (A) IF , CAPACITANCE (pF) 50 f = 1MHz 40 30 US1A â'" US1G 20 US1J â'" US1M 10 0 0.1 Won-Top Electronics
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SMA/DO-214AC 5000/T

DIODE US1J

Abstract: US1K-T3 US1A ­ US1K WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low , otherwise specified Symbol Average Rectified Output Current US1G US1J US1K Unit 50 , 1.0 US1J - US1K 0.1 Tj - 25°C Pulse Width = 300µs 0.01 0 40 Single Half Sine-Wave
Won-Top Electronics
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US1K-T3 7500/T
Abstract: US1A â'" US1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss Ultra-Fast Recovery Time , US1J US1K US1M Unit 50 100 200 400 600 800 1000 V VR(RMS) RMS , US1G 1.0 US1J - US1M 0.1 Tj - 25°C Pulse Width = 300µs 0.01 0 40 Single Half Won-Top Electronics
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us1m diode

Abstract: do-214ac footprint US1A ­ US1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss Ultra-Fast Recovery Time , Characteristics Characteristic G E @TA=25°C unless otherwise specified Symbol US1D US1G US1J , 0.5 0 25 50 75 100 125 150 10 US1A - US1D US1G 1.0 US1J - US1M 0.1
Won-Top Electronics
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us1m diode do-214ac footprint

HC 5287

Abstract: sck 104 thermistor US1J D7 US1J D6 US1J Monday, May 28, 2001 Document Number SPM C28 104 , Diode, (1N4937) Bootstrap Diode CBS 220µF, 35V Electrolytic Capacitor Bootstrap , Recovery Diode, (1N4937) Bootstrap Diode CBS 220µF, 35V Electrolytic Capacitor Bootstrap
Fairchild Semiconductor
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HC 5287 sck 104 thermistor 16T202DA1 RBS 3101 pm3a104k 16t202da1e KDS226 KRC101S 100KF KA5H0280R 474/AC275V PM3A104K

lighting

Abstract: equivalent for DIAC DB3 ) Discharge Diode: Single Rectifiers Types1 GL34 A.M, GL1 A.M, SM4001.7, SM5059.63, SM5400.08, S1 , diode!) the boost diode must be ultrafast. At 230 VRMS mains a 600 V type should be used, at 110 VRMS a , , "Products". Diotec Products for Lighting www.diotec.com 07/2005 SMD: SUF4004, SUF4005, US1J, US1G
Diotec
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C7000-4000 lighting equivalent for DIAC DB3 EM513 DIODE SMD diode DB3 UF4005 smd DIAC DB3 EQUIVALENT TGL34- TGL41 MYS40 380FS 380FD C1500
Abstract: and storage temperature range SYMBOLS VRRM VRMS VDC US1A US1B US1D US1G US1J 50 35 50 , ,sec. 100 KD Diode KD Diode
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US1A-US1M

Abstract: us1m vishay TT=75°C Symbol Value Unit US1A US1B US1D US1G US1J US1K US1M Repetitive peak , Diode capacitance VR=4V, f=1MHz Thermal resistance junction to terminal on PC board with
Vishay Intertechnology
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US1A-US1M us1m vishay US1M Lite 88/540/EEC 91/690/EEC D-74025
Abstract: Type US1A US1B US1D US1G US1J US1K US1M Sym bol V rrm = v rwm =VR Value 50 100 200 400 600 800 , V V ^A ^A ns ns _pF_ PF K/W R everse current R everse recovery tim e Diode capacitance Therm al -
OCR Scan

IRF32N50

Abstract: NTC 5R1 AC Motor Drive Table of Contents AC INPUT, Diode Bridges , INPUT, Diode Bridges Single Phase Product Name Status Description Features Package , TH / Radial PFC fast diode Product Name Status Description Features Package 15ETX06 UltraFast Diode 600V, 15A, 18 nsec Trr 30EPH06 UltraFast Diode 600V, 30A, 35 nsec Trr TH / Radial TO-247 (2 lead) 8ETX06 UltraFast Diode 600V, 8A, 16 nsec Trr TH
Vishay Intertechnology
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IRF32N50 NTC 5R1 smd diode 600v 1a IRFP32N50K IRFPS40N60K GB15XP120KT HFA25PB60
Abstract: ) â' 2.2 µF where: VDD = 15 V; Bootstrap Diode = US1J; Qg + QLS = Approximately 50 nC (designed , . 12 Selection of Bootstrap Diode . 12 Selection of Bootstrap , V/1 W Zener diode across the control supply to prevent surge destruction under severe conditions , ï'«t3 (2) (4) The added diode blocks the IC leakage current (approximately 500 nA) from the , filtering time (Typical 400 ns). For the short circuit state, the diode drop voltage must be considered Fairchild Semiconductor
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AN-9077 FSB70625 FSB70250 FSB70450
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