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DIODE ITT 310

Catalog Datasheet MFG & Type PDF Document Tags

DIODE ITT 310

Abstract: CM75E3Y-12E a reverse-connected super-fast recovery free wheel diode and an anode-collector connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate , ) Discrete Super-Fast Recovery (150ns) Free-Wheel Diode High Frequency Operation (15-20kHz) Isolated , Millimeters 94.0 80.0±0.25 40.0 34.0 31.0 Max. 23.0 21.5 20.0 18.0 17.0 16.0 13.0 12.0 7.0 Dia. 6.5 4.0 M5 , Collector-Emitter Voltage (G-E SH O R T) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward
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CM320 200DE

Abstract: DIODE ITT 310 low-leakage Schottky diode in series with ADJSD pin is recommended to avoid interference with the voltage , Temperature Range 3.1 to 3.6 0 to ±2.0 ±2.50 220 3.10 to 3.60 2.5 3.5 -40 to +150 V mA mA F V A A °C , LINE ITT LIM IVTT OFF PARAMETER Quiescent Current Shutdown Current Shutdown Logic High Shutdown Logic , Limit VTT Output Voltage VTT Load Regulation VTT Line Regulation ITT Current Limit VTT Shutdown Leakage Current CONDITIONS IDDQ = 0, ITT = 0 VADJSD = 3.3V (shutdown) (Note 2) Hysteresis = 100mV (Note 3) (Note 3
California Micro Devices
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ITT DIODE 041

Abstract: 041 itt diode BROADBAND SP5T DIODE SWITCH HIGH ISOLATION-REFLECTIVE-ABSORPTIVE 0.1-18 GHz GENERAL , connector; ITT Cannon M D BI-9SSL or equiv. 0.38 - [9,7] TYP. 0.12 MECHANICAL OUTLINES A Outline 1 2 3 , CONNECTION J2 CONTROL J3 CONTROL J4 CONTROL J5 CONTROL J6 CONTROL N.C. GND +5V -5V ITT CANNON MDB1-9PSP OR , 1.50 1.60 1.20 1.60 1.90 1 70 3.60 3.10 1.80 1.80 1.80 1.80 1.80 1.80 1.90 1.90 2.50 2.50 RD Rect. RD , multi-pins conn. Package thickness will increase to 1.00 ITT Cannon MDB1-9PSP equiv. ROUND SWITCHES KEY
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558s

Abstract: DIODE ITT 310 BROADBAND SPST DIODE SWITCH HIGH ISOLATION-REFLECTIVE-ABSORPTIVE 0.1-18 GHz GENERAL , ultipin con necto r; ITT C annon M D BI-9SSL or equiv, MECHANICAL OUTLINES A Outline in [m m ] 1 2.60 , CONTROL J4 CONTROL J5 CONTROL J6 CONTROL N.C, GND +5V -5V ITT CANNON MDB1-9PSP OR EQUIV. 0.125[3f18] DIA , 80 80 60 60 80 80 80 30 Loss M axim um dB 1.40 1.25 1.50 1.60 1.20 1.60 1.90 1.70 3.60 3.10 VSWR M a , thickness will increase to 1.00 ITT Cannon MDB1-9PSP equiv 0.21 15.3] | ROUND SWITCHES An MCE Company
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CM3202-00

Abstract: MARKING 3D regulator below 1.5V (SHDN_L), both VDDQ and VTT are enabled. A low-leakage Schottky diode in series with ADJSD , Load Current, Peak (1 s) CTT 3.1 to 3.6 0 to ±2.0 ±2.50 220 V A A F 3.10 to 3.60 V , PARAMETER CONDITIONS MIN TYP MAX UNITS IQ Quiescent Current IDDQ = 0, ITT = 0 8 , 5 15 mV VTT Regulator VTT DEF VTT Output Voltage ITT = 100mA VTT LOAD VTT Load Regulation Source, 0 ITT 2A (Note 3) Sink, -2A ITT 0 (Note 3) VTT Line Regulation 3.1V VIN
ON Semiconductor
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DIODE ITT 310

Abstract: OC70P2 mA/5 V W itt! ' tm in . 3 .1 5 3 .1 5 3 .1 5 3 .1 5 3 .1 5 3 .1 5 3 .1 5 ' : O N> t if i1 ;n , Ma R a ii Tab M L L L L L L £ .122(3.10) h* .312 (7.83) .j (- 1 2 4 (3 151 ._££>/S e iì a s , L L L L L L t .427(10.85) _ i _ * 315 Î8.00 MIN .122 (3.10) H22A2 H22A3 j_ t r - , Temperature (Flow) Input Diode Continuous Forward Current Reverse Voltage Power Dissipation Derate linearly at , (Flow) Input Diode Continuous Forward Current Reverse Voltage Reverse Voltage (MOC70P) Power Dissipation
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DIODE ITT 310 OC70P2 transistor 1p3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6

CM3202-02

Abstract: CM3202-02SM (SHDN_L), both VDDQ and VTT are enabled. A low-leakage Schottky diode in series with ADJSD pin is , 500 25 mV mV 0.8 2.5 3.0 A A 3.0 IDDQ = 0, ITT = 0 1.225 (3) VADJSD = , LOAD PARAMETER CONDITIONS VTT Output Voltage VTT Load Regulation MIN ITT = 100mA Sink, -2A ITT 10mA(4) 3.0V VIN 3.6V, ITT = 0.1A VTT LINE ITT LIM VTT Line Regulation ITT , ) MAX UNITS 1.225 Source, 10mA ITT 2A(4) TYP 1.275 30 ­30 1.250 10 ­10 V
California Micro Devices
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CM3202-02 CM3202-02SM CM320 CM3202

DIODE ITT 310

Abstract: TSI Terminal set interface protection and diode bridge Features Stand-off voltage from 62 , in short circuit for a better protection. Diode bridge for polarity guard and crowbar protection , equipment requiring combined protection against transient overvoltages and rectification by diode bridge , Description The TSI provides the diode bridge and the crowbar protection function that can be found in most , Characteristics Table 1. Compliant with the following standards Standard ITT K17 - K20 VDE 0433 1. See Figure 2
STMicroelectronics
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CM3212

Abstract: cm321202de low-leakage Schottky diode in series with ADJSD pin is recommended to avoid interference with the voltage , = 0, ITT = 0 0.5 mA ADJSD Logic Low UVLO Hysteresis = 100mV (3) 2.90 V , 15 mV VTT Regulator VTT DEF VTT Output Voltage ITT = 100mA VTT LOAD VTT Load Regulation Source, 10mA ITT 2A; Note 3 Sink, -2A ITT 10mA; Note 3 VTT LINE VTT Line Regulation 3.0V VIN 3.6V, ITT = 0.1A ITT LIM ITT Current Limit Source / Sink; Note 3 IVTT OFF VTT
ON Semiconductor
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CM3212 cm321202de ITT Industries diode

DIODE ITT 310

Abstract: IMDL5009D1 30E D â  (^£7555 DOE'IS1!? 1 â  T-m-O*? N E C ELECTRONICS INC ^ LASER DIODE _J_NDL5009D1 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE DESCRIPTION NDL5009D1 is a 1 310 nm laser diode especially designed for long distance high capacity transmission systems. The DC-PBH (Double , '¢ Long wavelength, Xp = 1 310 nm â'¢ Low threshold current. Itt) = 20 mA â'¢ Narrow vertical angle and , range. NEC has two types of laser diode chip on carrier with ribbon lead. One is the D1-type like
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IMDL5009D1 10FHC THAN-30
Abstract: Collector Current 150 A Ip Diode Continuous Forward Current @ Tc = 2 5 °C 75 A Ifm Diode Maximum Forward Current 150 A Pc Maximum Power Dissipation @Tc = 2 5 °C 310 W , Preliminary SMBH1G75US60 IGBT MODULE ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) Symbol Characteristics Min Typ Test Conditions Max Units Diode , - 90 130 Tc =25 °C di/dt= -150A/uS Tc =100°C - 30 - Diode Peak Reverse -
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Abstract: Current 150 A Ip Diode Continuous Forward Current @ Tc = 2 5 °C 75 A Ifm Diode Maximum Forward Current 150 A Pc Maximum Power Dissipation @Tc = 2 5 °C 310 W Tj , ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25°C,Unless Otherwise Specified) Symbol Characteristics Min Typ Test Conditions Max Units Diode Forward Voltage If=75A V Tc =25 °C - , Tc =100°C - 30 - Diode Peak Reverse Tc =25 °C - 7 9 Tc =100°C - -
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SM2G75US60
Abstract: 75 A I CM (1) Pulsed Collector Current 150 A Ip Diode Continuous Forward Current @ Tc = 2 5 °C 75 A Ifm Diode Maximum Forward Current 150 A Pc Maximum Power Dissipation @Tc = 2 5 °C 310 W Tj Operating Junction Temperature -40 ~ 150 °C Tstg , (DIODE PART) (Tc=25°C,Unless Otherwise Specified) Symbol Characteristics Min Typ Test Conditions Max Units Diode Forward Voltage If=75A V Tc =25 °C - 1.9 2.8 Tc -
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SMBL1G75US60

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode , Characteristics VZ (V) 1.90 to 2.20 2.10 to 2.40 2.30 to 2.60 2.50 to 2.90 2.80 to 3.20 3.10 to 3.50 3.40 , to 10.55 3.10 to 3.50 5.9 to 6.5 6.47 to 7.0 6.47 to 7.0 25.1 to 28.9 4.01 to 4.48 5.31 to , -35 HZT33 Vz (V) 31.0 to 35.0 Iz (mA) 5 Characteristics ·z (mv/·) Typ 1 (Absolute Value , 3.20 3.10 3.50 3.40 3.80 3.70 4.10 4.01 4.48 4.42 4.90 4.84 5.37 5.31 5.92 5.86 6.53
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1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent HSN278WK HZU10 HZU11 HZU12 HZU13 HZU15

TR20X3

Abstract: DFI01 260 Low Power Max 550 640 640 760 340 400 310 330 400 450 400 450 Typ 410 470 470 560 250 300 , Performance Examples (Continued) Current in Base Macro Power ATT IEE (mA) HIGH LOW ITT (mA) HIGH LOW 0.21 , Typ 280 280 Max 380 380 Current in Macro Outputs Power ATT ITT (mA) HIGH LOW 0.42 0.21 0.60 0.30 0.78 0.39 Min Typ Max Current in Base Macro Min IEE (mA) 0.60 ITT (mA) 0.84 1.20 1.56 0.80 1.0 Typ , (units in ps) To Output Q Q X . QN ^ QN ^ High Power Min 340 300 340 310 Typ 420 380 430 390 Max 570 510
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TR20X3 DFI01 OR02D

CM3212-02DE

Abstract: 1.5V (SHDN_L), both VDDQ and VTT are enabled. A low-leakage Schottky diode in series with ADJSD pin is , Thermal SHDN Threshold Thermal SHDN Hysteresis VDDQ, VTT TEMPCO CONDITIONS MIN 3.0 IDDQ = 0, ITT = 0 (3 , Current Limit VTT Output Voltage 2.450 2.550 25 25 3 V mV mV mV A A V 2.0 ITT = 100mA 1.225 , (SEE NOTE 1) SYMBOL VTT LOAD VTT LINE ITT LIM IVTT OFF VREF PARAMETER VTT Load Regulation CONDITIONS Source, 10mA ITT 2A(4) Sink, -2A ITT 10mA(4) 3.0V VIN 3.6V, ITT = 0.1A Source / Sink VADJSD = 3.3V
California Micro Devices
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CM3212-02DE CM3212-02SM

CM3212

Abstract: CM321 low-leakage Schottky diode in series with ADJSD pin is recommended to avoid interference with the voltage , 0.8 2.5 3 2.0 A A 1.225 1.250 1.275 V 3.0 IDDQ = 0, ITT = 0 1.225 (3 , 100mA 10mA IDDQ 2A (4) 3.0V VIN 3.6V, IDDQ= 0.1A IDDQ = (3) 2A (5) ITT = 100mA °C , LOAD PARAMETER VTT Load Regulation CONDITIONS MIN Source, 10mA ITT 2A(4) Sink, -2A ITT 10mA(4) 3.0V VIN 3.6V, ITT = 0.1A VTT LINE ITT LIM VTT Line Regulation ITT Current Limit
California Micro Devices
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CM321 02SM2

itt ol 170

Abstract:   -ITT INTERMETALL â'¢ ITT Semiconductors HAL114 ADVANCE INFORMATION O utline D im ensions , the VoD-Pin by an internal series resistor up to -1 5 V. No external reverse protection diode is , Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm 4bfl2711 ITT INTERMETALL ,   _ ITT INTERMETALL - ITT Semiconductors HAL114 ADVANCE INFORMATION Electrical , 18.3 31.0 mT 4.0 17.8 31.2 3.6 16.0 28.9 3.6 15.1 28.8 mT 2.8
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itt ol 170 HAL114S HAL114UA HAL114UA-E IEC68-2-58 6251-456-1AI
Abstract: ±30 Volts Total Power Dissipation @ Tc = 25°C, Derate Above 25â'C 310 Watts -5 5 to 150 , , OREGON 97702-1035 U.S.A. â  PHONE . . . (503) 382-8028 0 2 5 7 t10e 0 0 0 2 2 3 4 1 _ ITT â , ) Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND , Diode) *S M Pulsed Source Current © (Body Diode) VSD MIN Diode Forward Voltage © (VQS , .], VDS = PD/ I D [Cont.], t = 1 Sec. 310 Watts 310 Watts APT6040BN / APT5540BN 72 -
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APT6045BN APT5545BN 5540BN 6040BN 5545BN 6045BN

ITT Cannon

Abstract: DIODE ITT 310 PIN DIODE ATTENUATORS GA & 1 -GT SERIES GENERAL INFORMATION 1 -GT-(XX) Aeroflex-KDI PIN Diode Attenuators continuously change the amplitude of a microwave signal by varying DC Voltage , · sales@aeroflex-kdi.com PIN DIODE ATTENUATORS GA & 1 -GT SERIES 1.00 `A' .10 CV , 3.50 1.75 3.10 1.55 0.38 0.19 16 1.80 1.80 1.40 1.60 0.35 0.25 , 1 ITT CANNON DA-15P OR EQUIVALENT POWER/LOGIC PIN 9 SMA FEMALE CONNECTOR 2 PLS RF
Aeroflex KDI-RESISTOR
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ITT Cannon Cannon connectors da-15p pin
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