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Part Manufacturer Description Datasheet BUY
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

DIODE EJL

Catalog Datasheet MFG & Type PDF Document Tags

DIODE EJL

Abstract: r ^ r A / Z H Hl = j rF ^ n n -i^UVU U L^iU^LrnJ RECTIFIER, up to 150V, 3.1 A, 30ns IN 6O 76 i n r o 77 1N6077 1N6078 3FF05 s ffio 3FF10 3FF15 January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE Very low reverse recovery time Hermetically sealed in Metoxilite fused metal oxide Low switching losses Low , . copper. R ejL R ejL RejA ,-8.5 » ,-2 5 -« 9 0
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DIODE EJL 1N6076 1N6Q78

2pff4

Abstract: üMnnM(^[]=ü January 7, 1998 RECTIFIER, up to 1kV, 2A, 30-75ns 2PFF2 2PFF6 2PFF4 2PFF8 2PFF0 TEL805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com A XIA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE Very low reverse recovery time Glass passivated for hermetic sealing Low switching losses Soft, non-snap off, recovery characteristics Avalanche capability QUICK REFERENCE DATA , . on 0.06" thick pcb. 1 oz. copper. R ejL R ejL R ejA °c/w °c/w °c/w © 1997 SEMTECH CORP
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2pff4

DIODE EJL

Abstract: HMTh | 1 i g f ^ [ T = n RECTIFIER' u p to 1 k V ' 2A' 30-75ns 2PFF2 2PFF6 2PFF4 2PFF8 2PFF0 January 7, 1998 TEL:805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE Very low reverse recovery tim e Glass passivated for hermetic sealing Low switching losses Soft, non-snap off, recovery characteristics Avalanche , . copper. R ejL R ejL R ejA -26- °c/w * «- 12
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IN5618 DIODE

Abstract: IN5622 . â'"65°C to +20CC Thermal Resistance eJL @ L = , diode experts JAN, JANTX, JANTXV lNòbl4, lNbblb, INbblö, lNb62ü, 1N5622 ELECTRICAL SPECIFICATIONS (at
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1N5614 1N5616 1N5618 1N5620 IN5622 IN5614 IN5618 DIODE diode 1n5620 IN5618 MIL-S-19500/427

tube Gz34

Abstract: gz34 rectifier FILAMENT^ Q Q ^FILAMENT INTERNALLY CATHOOC CONNECTED T II BULB x â'¢a < S z ioi^" mi^-r>l
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tube Gz34 gz34 rectifier GZ34 5ar4 tube gz34 tube 5AR4 5AR4/GZ34

DIODE EJL

Abstract: in5619 to +200°C Thermal Resistance eJL , Hfatwtown / The diode experts JAN, JANTX, JANTXV 1N5615,1N5617,1N5619 ELECTRICAL SPECIFICATIONS (at 25Â
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1NS615 in5619 1N5619 DIODE 1N5619 JTX JANTXV 1N5615 surface mount package 1N5617 JAN JANTX 1N5615 MIL-S-19500/429

smd transistor A1

Abstract: DIODE smd marking A1 with TA =25 *2 . The R èJA is the sum of the thermal impedence from junction to lead R èJL and lead to , Gate-Body leakage current Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=4.2A Diode , =6 trr IF=-4A, dI/dt=100A/ Body Diode Reverse Recovery Charge Qrr IF=-4A, dI/dt , 20.2 ns s 11.2 nC tf Body Diode Reverse Recovery Time 38.2 12 Turn-On
Kexin
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KO3401 smd transistor A1 DIODE smd marking A1 smd transistor 2a 43 smd transistor marking A1 SMD TRANSISTOR MARKING 94

smd marking 58a

Abstract: smd transistor a4 thermal impedence from junction to lead R èJL and lead to ambient. www.kexin.com.cn 1 , =125 VDS=5V, ID=5.8A Diode Forward Voltage 3 34.5 VGS=10V, ID=5.8A Forward Transconductance , =10V, VDS=15V, RL=2.7 ,RGEN=3 Body Diode Reverse Recovery Time trr IF=5.8A, dI/dt=100A/ Body Diode Reverse Recovery Charge Qrr IF=5.8A, dI/dt=100A/ 2 20.9 30 ns 7.5 ns s
Kexin
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KO3404 smd marking 58a smd transistor a4 a4 smd transistor smd transistor marking A4 DIODE smd marking A4

A7 SMD TRANSISTOR

Abstract: SMD a7 Transistor thermal impedence from junction to lead R èJL and lead to ambient. www.kexin.com.cn 1 , Transconductance gFS VDS=-5V, ID=-4A Diode Forward Voltage VSD IS=-1A,VGS=0V Maximum Body-Diode , tr Turn-Off Fall Time Turn-On DelayTime VGS=-10V, VDS=-15V, RL=3.6Ù,RGEN=3Ù Body Diode Reverse Recovery Time trr IF=-4A, dI/dt=100A/µs 27 ns Body Diode Reverse Recovery Charge
Kexin
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KO3407 A7 SMD TRANSISTOR SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7

IN5419

Abstract: JANtx 1N5415 . â'"65°C to +?00°C Thermal Resistance eJL @ L = , IN SURFACE MOUNT PACKAGE. SEE SECTION 10 2-18 Microjsemi Corp. f Watertown f The diode Ts JAN
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1N5415 1N5416 1N5417 1N5418 1N5419 1N5420 IN5419 JANtx 1N5415 IN5417 IN5420 in5415 1N5415-1N5420 MIL-S-19500/411

PFF6

Abstract: H tM ü T K ^ IM ] TM 30-75ns R' u p t o 1 k V ' 1 -25A' PFF2 PFF6 PFFO PFF4 PFF8 January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AX IA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE · Very low reverse recovery time · Glass passivated for hermetical sealing · Low switching losses · Avalanche capability · Soft, non-snap off, recovery , resistance - junction to amb. on 0.06" thick pcb. 1 oz. copper. R ejL R öjl PFF2 PFF4 PFF6 PFF8 47
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PFF6

DIODE MARKING EJL

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS140T3/D Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and , TH ERM AL CHARACTERISTICS Thermal Resistance - Junction to Lead (T|_ = 25°C) R eJL 12 °C/W ELEC
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DIODE MARKING EJL MBRS140T3

1N6621 JANTXV

Abstract: IN6620 MicrosemiCorp. I ï hc> diode experts SANTA ANA, CA SCOTTSDALE, AZ For more information call: (602) 941-6300 «IN6620 thru 1IU6625 ULTRA FAST RECTIFIERS Features â'¢ AXIAL AND SURFACE MOUNT CONFIGURATIONS â'¢ HIGH VOLTAGE WITH ULTRA FAST RECOVERY TIME â'¢ VERY LOW SWITCHING LOSS AT HIGH TEMPERATURE â'¢ LOW CAPACITANCE â'¢ METALLURGICALLY BONDED â'¢ NON-CAVITY GLASS PACKAGE â'¢ SURFACE MOUNT , OPERATING CURRENT (Note 1) OPERATING CURRENT (Note 3) PEAK FORWARD SURGE CURRENT (Note 2) "-e-jL L = .375"
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1N6620 1N6621 1N6622 1N6623 1N6624 1N6625 1N6621 JANTXV MIL-S-19500/585
Abstract: ir\/7 1 h H ^ l r ^ n - n ]U\7U U L ^ .L ^ L r-à RECTIFIER, up to 1kV,1.25A, 30-75ns PFF2 PFF6 PFF4 PFF8 PFFO January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com QUICK REFERENCE DATA A XIA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE â'¢ Very low reverse recovery time â'¢ Glass passivated for hermetical sealing â'¢ Low switching losses , °C /W R ejL 652 MITCHELL ROAD NEWBURY PARK CA 91320 P üW Ï Ï T M ( j^ C = [ ] " -
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DIODE MARKING EJL

Abstract: IRC640 © 430 mJ Iar Avalanche Current CD 18 A Ear Repetitive Avalanche Energy © 13 mJ dv/dt Peak Diode , Continuous Source Current (Body Diode) - - 18 A MOSFET symbol id showing the ( i 1 T Source integral reverse SUit^aâ"¢, p-n junction diode. s*°" Ism Pulsed Source Current (Body Diode) © - - 72 Vsd Diode , 0.90 1.10 1.30 1.50 Vsd. Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward , Current _Current Regulator T Same Type as D.U.T, ,n u â 2fF > I ft 3nF Vgs> t)»*EJl â'¢AVVIO
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IRC640
Abstract: 60 100 - 6 5 t o +175 Unit W A W A °C/W °C PM(AV) If s m R eJL R e jA Operating , than the maxim um values, the diode will short circuit. (2) Mounted on copper pad area of 1.6 x 1.6 -
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BZW06 MIL-STD-750 BZW06P-6V4B

zener diode t5

Abstract: N4748 Motorola I 51 volts (each device) *Code: B ­ Two devices in series Zener Diode Example , Device Description I ~ Nominal ~ "oltage ! Motorola 1 Zener Diode perature , thermal diob,q;as tio~$ seconds while maintaining the lead temperature 3/8" from the diode body , ba found Figure 2 for a train of Figure 3 for dc power. PD eJL using of TJ
Motorola
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zener diode t5 N4748 1n4742 motorola zener diode nomenclature zener n7 Motorola 1N4742 1N4764

3 Watt Zener Diode

Abstract: DIODE EJL m th e diode body, and an a m b ie n t te m p e ra tu re o f 25°C (+8°C , -2 ° C ) NOTE 3. ZENER , from a given zener diode is tem perature dependent, it is necessary to determine ju n c tion tem , inch) or from Figure 10 for dc power. AT j l = eJL PD For worst-case design, using expected limits of , respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions
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3 Watt Zener Diode DO-41 DO-35

do-41 footprint

Abstract: the actual voltage available from a given zener diode is tem perature dependent, it is necessary to , train of power pulses (L = 3/8 inch) or from Figure 10 for dc power. AT j l = eJL PD For worst-case , not significantly respond to heat surges generated in the diode as a result of pulsed operation once
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do-41 footprint 1N5913B

T 4512 H diode

Abstract: ps 4512 diode -19500/420C 15 June 1992 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER , diode periphery except the sections of leads over which the diameter is controlled. 4. Dimension , defined in MIL-S-19500, MIL-STD-750, and herein. 7 0000125 0035452 b4fl MIL-S-19500/420D 3.3.2 Diode , Steady-state operation Life. A half-sine wave of the specified peak voltage shall be impressed across the diode
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1N5550 1N5554 1N5550US 1N5554US 1N5551 1N5551US T 4512 H diode ps 4512 diode diode T 4512 H 1N5552 JANS Diode 1n5551 J1N5551 MIL-S-19500/4200 MIL-S-19500/420C
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