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DI SPEC PHOTO 60V

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PREPARED BY: DATE 28. DEC. 1994 SPEC NO. EC-94Z25 SHARP ELECTRONIC COMPONENTS GROUP , DIVISION 8 ELECTRONIC COMPONENTS DIV. D OPTO-ELECTRONIC DEVICES DIV. PHOTO VOLTAICS DIV. APPROVED BY , Figure 1 1st IF 21.7HHz 2nd IF 450 kHz Analog FM 3.3V to 5.0V (internal Regulator IC out:3.0Y) 6.0V , ;.j _ · _ j_A_ MSB LSB H L ¡Du D I s{D I I 3 Di 2D.i Dlofoî foi ^7 fo* ^5 D4 d 3 D ì , Disfonfol3 D i2DllDiojDg fos ^7 fos fos fon fos ^2 Di foo N = D , 8 x 2 , 8 + D 1 5x 2 15+ D M x 2 , ' ' -
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CCITT P53a 74237 74159 DI SPEC PHOTO 60V 4 EC--94Z25 RY3GB021 9875MH 9625MH 14-PIN KY3GB021
Abstract: for fast turn-on switching of an external MOSFET device. When the MOSFET is on, the photo current from , photo current will be charging the gate of the MOSFET. This feature can be exploited during system , protection circuitry is quite simple. The CPC1580 is guaranteed for 60V operation and the protector is rated for 45.4V @ 11.2A peak pulse current, well below the 60V. The transistor (Q1) is a 50V MOSFET, which , Volt Load Switching Data Calculated 4.3V 16S 1S 16S (1580 spec) 175S (1580 spec) Measured 3.7V 2 S 38S IXYS
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E-MOSFET AN-201 AN-201-R00D
Abstract: semiconductor laser Photo Acceptance IC 1 RF switch IC 1 Renesas SP Driver LCD driver for small displayï , SW Speed) Intel VR12.5/12.6 2010 2007 Intel VR11.x DrMOS initial Spec.1.0 (8x8 QFN) DrMOS Spec. 1.0 R2J20605NP (8 x 8 mm) (2nd R2J20651NP Generation) (6 x 6 mm) 2012 , R2J20658NP â'¦ 2009 R2J20602NP 2004 For 2013 Model â'¦ 2010-2011 2006 DrMOS DrMOS Spec. 4.0 (6x6 QFN) DrMOS Spec. 3.0 (6x6 QFN) 2004 2003 Intel VR12 â'™12 Aug. Rev Renesas Electronics
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rjh60d7bdpq PAE-AA-12-0177-1 PAE-AA-12-0049-1
Abstract: paths with higher di/dt. The high di/dt loop should be kept as tight as possible to reduce inductive ringing. In the SEPIC configuration, the high di/dt loop contains the power MOSFET, sense resistor , SPV D11 VOUT1 F11 GND H11 GND K11 SW Package Photo 8008fa 13 , Threshold to IQ to Fall Below 1uA" spec 3 8008fa Information furnished by Linear Technology , DESCRIPTION COMMENTS LTM8027 60V, 4A DC/DC uModule Regulator 4.5V VIN 60V, 2.5V VOUT 24V, 15mm Linear Technology
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LTM8008 SBR3U100LP-7 VC 5022 VC 5022 x 503 Variable Resistor JESD51-9 LTM8008HV 72VIN MSD1278T-472ML LTC3824
Abstract: , especially the power paths with higher di/dt. The high di/dt loop should be kept as tight as possible to reduce inductive ringing. In the SEPIC configuration, the high di/dt loop contains the power MOSFET , VOUT1 F11 GND H11 GND K11 SW PACKAGE PHOTO 8008fa 13 aaa Z DETAIL A , DESCRIPTION PAGE NUMBER A 2/11 Removed â'RUN Threshold to IQ to Fall Below 1ÂuAâ' spec 3 , 10ÂuF 10ÂuF 8008 TA02 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LTM8027 60V Linear Technology
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Abstract: to 60V. Features 3.3V, 5V, 12V, and adjustable output versions Adjustable version output , -pin surface mount and DIP-8 package Guaranteed 0.5A output current Input voltage range up to 60V Requires , Temperature Range Supply Voltage LM2594 LM2594HV 4.5V to 40V 4.5V to 60V -4 0 °C < T, +125"C L M 2 5 9 4 , LM2594 and 60V tor the LM2594HV. Sym boi Param eter Condition s LM 2594/LM 25 9 4H V-3.3 Typ (Note 3 , 10: V,N = 40V for the LM2594 and 60V for the LM2594HV. Hole 1 1 : Junction to ambient thermal -
OCR Scan
2594HV 2594h 2594m 2594H LM2594/LM2594HV
Abstract: applications requiring and input voltage up to 60V. Features â  3.3V, 5V, 12V, and adjustable output versions , -8 package â  Input voltage range up to 60V â  150 kHz fixed frequency internal oscillator â  Shutdown , Voltage (V,N) LM2597 45V LM2597HV 60V SD /SS Pin Input Voltage (Note 2) 6V Delay Pin Voltage (Note 2) 1,5V , -40°C < T, +125"C 4.5V to 40V 4.5V to 60V LM2597/LM2597HV-3.3 Electrical Characteristics Specifications , Temperature Range.V|Nmax=40V for the LM2597 and 60V for the LM2597HV Symbol Parameter Conditions LM2597 -
OCR Scan
N5818 LM2597/LM2597HV
Abstract: conditions. The LM2594HV is for applications requiring an input voltage up to 60V. Features â  3.3V, 5V, 12V , -8 package â  Guaranteed 0.5A output current â  Input voltage range up to 60V â  Requires only 4 external , LM2594 45V N Package (Soldering, 10 sec.) +260'C LM2594HV 60V Maximum Junction Temperature +150'C ON/OFF , 60V ESD Susceptibility LM2594/LM2594HV-3.3 Electrical Characteristics Specifications with standard , |Nmax= 40V for the LM2594 and 60V for the LM2594HV. Symbol Parameter Conditions LM2594/LM2594HV -
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n5817 nichicon hf series capacitor Nichicon KO
Abstract: 60V. Features 3.3V, 5V, 12V, and adjustable output versions A djustable version output voltage , output current A vailable in 8-pin surface m ount and DIP-8 package Input voltage range up to 60V 150 , Supply Voltage LM2597 LM 2597HV 4 .5 V to 40V 4 .5 V to 60V -4 0 "C < T , +12 5 "C L M 2 5 9 7 / L M 2 , tu re R a n g e .V INmax= 4 0 V fo r the LM2597 and 60V fo r the LM 2597HV S ym b o l Param eter C o , T e m p e ra tu re R an g e .V |Nma)(= 4 0 V fo r the LM 2597 and 60V fo r the LM 2597HV S ym b o l -
OCR Scan
2597H L-5470-5 l5470 S130 DIP8 Zener 20v ba ph L-5470-3 2597/LM
Abstract: STARTS EPI DIFFUSION/IMPLANT PHOTO MASK/ETCH POLY-SI GRIND/POLISH PRODUCTS DI WAFER , 55XXXX ACT-D01 - XXX ACT-V01 - XXX ACT-R01 - XXX DGEN-XXX Training Spec B Specifications R , /IMPLANT (device formation) EPI Trench Fill Planer Polish Option *PHOTO LITHOGRAPHY (Mask and , specific measurements such as: * Diffusion/Implant * Deposited Films * Photo Resist - Junction Depth Intersil
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pin diagram details of CD4015 intersil DATE CODE MARKING y2010 R4573 B TA3842 ta5142 07-AUG-2000 MIL-PRF-38535 EB-1997 05-APR-1996 07-JUN-1996 03-NOV-1995
Abstract: power MOS FET is on, and according to the 2SK134/2SJ49 spec, it is; R on = Vps ( s a t ) In - , ) 2SB648A (-160V) 2 S K 414 (160 V) - (160V) 2SJ50 ( - 1 60V) 2 S J 119 ( - 160 V ) 80-100 - , - 100 , Input o - \ j v v IT] rl=8Q - ° -Vcc i = - 60V Q , , Q 2 : 2SK190 Q 3 , Q 4 , ; photo coupler at full load 80% ; at 200W output 85% L ch 1 IO m H P4 2SJ50 -
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2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent K429 2SJ99 2SK375 2SK535 2SK382 2SK311 2SK580 RE79-24
Abstract: /I NSTR I NST R PER-IST YEAR DESCRIPTION: C. E . - Documentation Coor di nator Ext . , . ; . Spec. Ra qulrsd - .4Parts Coordinator No . DESCRIPTION . ~ . 2 FIRST PAR TS D , . . . . . . . AMPS DI G I TAL . . . . . . . . . . . 4-77 4-78 . . . . . . . . . . . , 156-1365-00 0+ Un i versal P eripheral I ntfc 40 DI P 6522 156-1539-00 + 64 8 RAM ; 1024 8 EPROM 156-1364-00 40 DI P 6803-1 156-1683-00 80 80 1802D 2901 / 2901 / 156-0983-00 Semiconductor Common Design Parts Catalog
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transistor C3866 Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 E13007 2 010DE
Abstract: line and load conditions Guaranteed 1A output current Wide input voltage range 40V up to 60V for HV , Characteristics Specifications with standard type face are for TJ e 25 C 40V 60V and those with boldface , 2 33 Output Voltage LM1575HV LM2575HV 4 75V s VIN s 60V 0 2A s ILOAD s 1A Circuit of , 0 2A s ILOAD s 1A 8V s VIN s 60V Circuit of Figure 2 50 Efficiency VOUT Output Voltage , 15V s VIN s 60V Circuit of Figure 2 12 Efficiency VIN e 15V ILOAD e 1A 88 % LM1575 National Semiconductor
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LM2576-12 SMD LM2576HV-ADJ Step-Down Voltage Regulator smd 5pin ic LM2576-3.3 lm2575t-5.0 p LM2576-ADJ LM2575
Abstract: upper trace in each photo is the current in switch QA as it turns off. Trace B is the output voltage , low noise amplifier. In the left photo the switch slew rates are programmed to their highest values , troublesome output ripple is eliminated, as shown in the right photo. The efficiency penalty is minor; the , AC-coupled output voltage in a 100MHz bandwidth. In the left photo, the slew rates are set to their maximum Linear Technology
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circuit diagram of line follower robot switched capacitor filter handbook mf10 schematic diagram 48V solar controller LT1206 solar charger schematic 12V flying robot with camera LT1533 LTC1067-50 LTC1422 LTC1626 LTC1340 LT1635
Abstract: and LCD Bias.86 Xenon Photo Flash Chargers , .94 High Current High Current for Photo -
OCR Scan
LR3441 LZ1032 marking code B9 DG SMD Transistor sdz-370n ccd transistor bf 175 transistor smd sensor 80L LH5047/LH5048
Abstract: . 2.0 to 6.0V ±2.0% 1.0uA 0.1uA (VOUT=5.0V, ±2.0% 1.2uA - 0.16V (VOUT , 1.5 to 6.0V ±2.0% 90uA 0.1uA Super-low output voltage 1.2 to 3.65V 0.8 to 3.3V , -89-3 TO-92 SNT-4A SOT-23-5 SOT-89-3 TO-92 SC-82AB Ceramic IOUT=10mA) 1.1 to 6.0V Package , ) ±1.0% 1.2 to 6.0V (for fixed output type) 60uA 0.1uA 0.13V (VOUT=3.0V, IOUT , current up to 1A S-816 series External transistor 2.5 to 16V 2.5 to 6.0V ±2.0% 30A Linear Technology
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lm 7803 3V Positive Voltage Regulator ic 4440 40w amplifier 12v mt 1389 de ltsx e3 LM 4440 AUDIO AMPLIFIER CIRCUIT w10 mic package bridge rectifier D-59387 D-73230 1-800-4-LINEAR
Abstract: Backlight and LCD Xenon Photo Flash Chargers , .102 High Current for Photo Flash/Torch Lighting. .103 . LED Ballaster Seiko Instruments
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S8550 equivalent 93cc46 d2 SMD TRANSISTORs pnp npn SOT-23-6 8254ab 66a hall sensor 8254aa S-11L10 S-1135 S-1137 S-1702 S-1731 S-35199A/35399A
Abstract: +4V +4V . +2V 13.5V 10.0V 8.0V 6.0V 4.0V 2.0V t6 1V +7.5V Batteriespannung Ub nach , Positive sense input ( Linear Technology
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SMD LTYN Weston 2281 thermometer ltls e3 LT3060ITS8 LTC3855EUH-1 LTPG e3
Abstract: Fast Photo , LT1193 DIFFERENTIAL LT1194 DIFFERENTIAL LT1220 LT1221 LT1222 LT1223 LT1224 Slew Rate 60V/|is 450V/jis , Figure 7 the probe is properly grounded, but a new problem pops up. This photo shows an amplifier output , Summing Point - 2 ffi A peaked, tailing response is Figure 12's characteristic. The photo shows the final , clean, with only a slight hint of ring after the falling edge. This photo was taken with a high grade AMETEK
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alternator regulator protocol BSS transistor 30028
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