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DI SPEC PHOTO 60V

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PREPARED BY: DATE 28. DEC. 1994 SPEC NO. EC-94Z25 EC-94Z25 SHARP ELECTRONIC COMPONENTS GROUP , DIVISION 8 ELECTRONIC COMPONENTS DIV. D OPTO-ELECTRONIC DEVICES DIV. PHOTO VOLTAICS DIV. APPROVED BY , Figure 1 1st IF 21.7HHz 2nd IF 450 kHz Analog FM 3.3V to 5.0V (internal Regulator IC out:3.0Y) 6.0V , ;.j _ · _ j_A_ MSB LSB H L ¡Du D I s{D I I 3 Di 2D.i Dlofoî foi ^7 fo* ^5 D4 d 3 D ì , Disfonfol3 D i2DllDiojDg fos ^7 fos fos fon fos ^2 Di foo N = D , 8 x 2 , 8 + D 1 5x 2 15+ D M x 2 , ' ' ... OCR Scan
datasheet

19 pages,
370.14 Kb

DI SPEC PHOTO 60V 4 -102dBm 74159 74237 CCITT P53a EC--94Z25 TEXT
datasheet frame
Abstract: for fast turn-on switching of an external MOSFET device. When the MOSFET is on, the photo current from , photo current will be charging the gate of the MOSFET. This feature can be exploited during system , protection circuitry is quite simple. The CPC1580 CPC1580 is guaranteed for 60V operation and the protector is rated for 45.4V @ 11.2A peak pulse current, well below the 60V. The transistor (Q1) is a 50V MOSFET, which , Volt Load Switching Data Calculated 4.3V 16S 1S 16S (1580 spec) 175S (1580 spec) Measured 3.7V 2 S 38S ... IXYS
Original
datasheet

12 pages,
649.47 Kb

E-MOSFET AN-201 CPC1580 TEXT
datasheet frame
Abstract: semiconductor laser Photo Acceptance IC 1 RF switch IC 1 Renesas SP Driver LCD driver for small displayï , SW Speed) Intel VR12.5/12.6 2010 2007 Intel VR11.x DrMOS initial Spec.1.0 (8x8 QFN) DrMOS Spec. 1.0 R2J20605NP R2J20605NP (8 x 8 mm) (2nd R2J20651NP R2J20651NP Generation) (6 x 6 mm) 2012 , R2J20658NP R2J20658NP … 2009 R2J20602NP R2J20602NP 2004 For 2013 Model … 2010-2011 2006 DrMOS DrMOS Spec. 4.0 (6x6 QFN) DrMOS Spec. 3.0 (6x6 QFN) 2004 2003 Intel VR12 ’12 Aug. Rev ... Renesas Electronics
Original
datasheet

161 pages,
7723.25 Kb

rjh60d7bdpq TEXT
datasheet frame
Abstract: paths with higher di/dt. The high di/dt loop should be kept as tight as possible to reduce inductive ringing. In the SEPIC configuration, the high di/dt loop contains the power MOSFET, sense resistor , SPV D11 VOUT1 F11 GND H11 GND K11 SW Package Photo 8008fa 13 , Threshold to IQ to Fall Below 1uA" spec 3 8008fa Information furnished by Linear Technology , DESCRIPTION COMMENTS LTM8027 LTM8027 60V, 4A DC/DC uModule Regulator 4.5V VIN 60V, 2.5V VOUT 24V, 15mm ... Linear Technology
Original
datasheet

16 pages,
232.45 Kb

SBR3U100LP-7 LTM8008V LTM8008HV LTM8008 JESD51-9 503 Variable Resistor VC 5022 x LTM8027 VC 5022 72VIN TEXT
datasheet frame
Abstract: , especially the power paths with higher di/dt. The high di/dt loop should be kept as tight as possible to reduce inductive ringing. In the SEPIC configuration, the high di/dt loop contains the power MOSFET , VOUT1 F11 GND H11 GND K11 SW PACKAGE PHOTO 8008fa 13 aaa Z DETAIL A , DESCRIPTION PAGE NUMBER A 2/11 Removed “RUN Threshold to IQ to Fall Below 1ÂuA” spec 3 , 10ÂuF 10ÂuF 8008 TA02 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LTM8027 LTM8027 60V ... Linear Technology
Original
datasheet

16 pages,
242.39 Kb

LTM8008 72VIN TEXT
datasheet frame
Abstract: to 60V. Features 3.3V, 5V, 12V, and adjustable output versions Adjustable version output , -pin surface mount and DIP-8 package Guaranteed 0.5A output current Input voltage range up to 60V Requires , Temperature Range Supply Voltage LM2594 LM2594 LM2594HV LM2594HV 4.5V to 40V 4.5V to 60V -4 0 °C < T, +125"C L M 2 5 9 4 , LM2594 LM2594 and 60V tor the LM2594HV LM2594HV. Sym boi Param eter Condition s LM 2594/LM 2594/LM 25 9 4H V-3.3 Typ (Note 3 , 10: V,N = 40V for the LM2594 LM2594 and 60V for the LM2594HV LM2594HV. Hole 1 1 : Junction to ambient thermal ... OCR Scan
datasheet

30 pages,
827.43 Kb

2594m 2594HV 2594h 2594/LM 2594H TEXT
datasheet frame
Abstract: applications requiring and input voltage up to 60V. Features ■ 3.3V, 5V, 12V, and adjustable output versions , -8 package ■ Input voltage range up to 60V ■ 150 kHz fixed frequency internal oscillator ■ Shutdown , Voltage (V,N) LM2597 LM2597 45V LM2597HV LM2597HV 60V SD /SS Pin Input Voltage (Note 2) 6V Delay Pin Voltage (Note 2) 1,5V , -40°C < T, +125"C 4.5V to 40V 4.5V to 60V LM2597/LM2597HV-3 LM2597/LM2597HV-3.3 Electrical Characteristics Specifications , Temperature Range.V|Nmax=40V for the LM2597 LM2597 and 60V for the LM2597HV LM2597HV Symbol Parameter Conditions LM2597 LM2597 ... OCR Scan
datasheet

34 pages,
1462.26 Kb

N5818 LM2597/LM2597HV TEXT
datasheet frame
Abstract: conditions. The LM2594HV LM2594HV is for applications requiring an input voltage up to 60V. Features ■ 3.3V, 5V, 12V , -8 package ■ Guaranteed 0.5A output current ■ Input voltage range up to 60V ■ Requires only 4 external , LM2594 LM2594 45V N Package (Soldering, 10 sec.) +260'C LM2594HV LM2594HV 60V Maximum Junction Temperature +150'C ON/OFF , 60V ESD Susceptibility LM2594/LM2594HV-3 LM2594/LM2594HV-3.3 Electrical Characteristics Specifications with standard , |Nmax= 40V for the LM2594 LM2594 and 60V for the LM2594HV LM2594HV. Symbol Parameter Conditions LM2594/LM2594HV LM2594/LM2594HV ... OCR Scan
datasheet

30 pages,
1239.08 Kb

Nichicon KO nichicon hf series capacitor n5817 LM2594/LM2594HV TEXT
datasheet frame
Abstract: 60V. Features 3.3V, 5V, 12V, and adjustable output versions A djustable version output voltage , output current A vailable in 8-pin surface m ount and DIP-8 package Input voltage range up to 60V 150 , Supply Voltage LM2597 LM2597 LM 2597HV 2597HV 4 .5 V to 40V 4 .5 V to 60V -4 0 "C < T , +12 5 "C L M 2 5 9 7 / L M 2 , tu re R a n g e .V INmax= 4 0 V fo r the LM2597 LM2597 and 60V fo r the LM 2597HV 2597HV S ym b o l Param eter C o , T e m p e ra tu re R an g e .V |Nma)(= 4 0 V fo r the LM 2597 and 60V fo r the LM 2597HV 2597HV S ym b o l ... OCR Scan
datasheet

34 pages,
975.86 Kb

Schott 67144110 LT S130 L4160 L-5470-3 Zener 20v ba ph S130 DIP8 l5470 L-5470-5 2597H LM2597/LM2597HV TEXT
datasheet frame
Abstract: STARTS EPI DIFFUSION/IMPLANT PHOTO MASK/ETCH POLY-SI GRIND/POLISH PRODUCTS DI WAFER , 55XXXX 55XXXX ACT-D01 ACT-D01 - XXX ACT-V01 ACT-V01 - XXX ACT-R01 ACT-R01 - XXX DGEN-XXX Training Spec B Specifications R , /IMPLANT (device formation) EPI Trench Fill Planer Polish Option *PHOTO LITHOGRAPHY (Mask and , specific measurements such as: * Diffusion/Implant * Deposited Films * Photo Resist - Junction Depth ... Intersil
Original
datasheet

104 pages,
378.84 Kb

CD4015 CROSS REFERENCE ICL8038 HS1840RH HA-5320 INCOMING RAW MATERIAL INSPECTION format multilayer lithography ic fabrication pin diagram details of TA3842 intersil DATE CODE MARKING ESD test plan TA388* transistor R4573 B pin diagram details of CD4015 07-AUG-2000 07-AUG-2000 07-AUG-2000 TEXT
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