NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| DGS20-015A | IXYS Corporation | 150V gallium arsenide schottky rectifier |
2 pages, |
Original |  |
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| DGS20-015A | IXYS Corporation | DIODE SCHOTTKY DIODE 150V 17A 2TO-220AC |
1 pages, |
Original | |
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| DGS20-015AS | IXYS Corporation | DIODE SCHOTTKY DIODE 150V 17A 2TO-263AB |
1 pages, |
Original | |
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| DGS20-015ASSN | IXYS Corporation | Diode Schottky Diode 150V 17A 2TO-263AB |
1 pages, |
Original | |
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| DGS20-018A | IXYS Corporation | DIODE SCHOTTKY DIODE 180V 23A 2TO-220AC |
2 pages, |
Original | |
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| DGS20-018A | IXYS Corporation | 180V gallium arsenide schottky rectifier |
2 pages, |
Original | |
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| DGS20-018AS | IXYS Corporation | DIODE SCHOTTKY DIODE 180V 23A 2TO-263AB |
2 pages, |
Original | |
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| DGS20-018AS | IXYS Corporation | 180V gallium arsenide schottky rectifier |
2 pages, |
Original | |
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| DGS20-018ASN | IXYS Corporation | Diode Schottky Diode 180V 23A 2 pin TO-220AC |
2 pages, |
Original | |
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| DGS20-018ASSN | IXYS Corporation | Diode Schottky Diode 180V 23A 2TO-263AB |
2 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: DGS20-025A data sheet for characteristic curves Notes: Data given for TVJ = 25OC and per diode unless ... | Original |
2 pages, |
transistor 05c DGS20-025A 20-05C 20-05C abstract |
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| Abstract: converters Resonant converters See DGS20-025A data sheet for characteristic curves Notes: Data given ... | Original |
2 pages, |
DGS20-025A 20-05CC 20-05CC abstract |
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| Abstract: type pinout DGS10-018A DGS10-018A DGS10-025A DGS10-025A DGSK20-018A DGSK20-018A DGSK20-025A DGSK20-025A DGS20-018A DGS20-025A DGSK40-018A DGSK40-018A ... | Original |
6 pages, |
Schottky diode TO220 DGS10-018A DGS10-025A DGS20-018A DGS20-025A DGSK20-018A DGSK20-025A DGSK40-018A DGSK40-025A diode 10A high power diode axial gaas IXYS-VUM25-E 2a 200v schottky diode datasheet abstract |
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| Abstract: DGSK20-025A DGSK20-025A DGS20-018A DGS20-025A DGSK40-018A DGSK40-018A DGSK40-025A DGSK40-025A single diode single diode double diode ... | Original |
6 pages, |
DGSK20-025A DGS20-018A DGS20-025A DGSK20-018A DGS10-018A DGSK40-018A DGSK40-025A IXAN0041 power Diode 20A schottky diode ST DGS10-025A Schottky diode TO220 2a 200v schottky diode IXAN0041 abstract |
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| Abstract: DGS200fl 753 â- -7J1 375 Powered by ICminer.com Electronic-Library Service CopyRight 2003 ... | OCR Scan |
7 pages, |
LM339A lm339 pin diagram LM339 APPLICATIONS zero crossing lm2901 application note LM2901 LM239A LM139A "Op Amp" lm339 LM139/A LM239/A LM339/A 36VOR LM139/A abstract |
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| Abstract: GaAs - Diodes Voltage Current VRRM IDC Package style Type Version Contents VF Circuit Diagram Page V TO-220 AB © 2000 IXYS All rights reserved 1 1 150/180 150/180 10 20 1.1 0.9 DGS 10 DGS 20 A A D1 - 2 D1 - 3 150/180 150/180 2x 10 2x 20 1.1 0.9 DGSK 20 DGSK 40 A A D1 - 2 D1 - 3 1 1 220/250 220/250 10 20 1.5 1.1 DGS 10 DGS 20 A A D1 - 4 D1 - 5 2 2 2 V 2 2 1 TO-220 A ... | Original |
6 pages, |
datasheet abstract |
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| Abstract: N October 1996 NDP5060 NDP5060 / NDB5060 NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 26 A, 60 V. RDS(ON) = 0.05 @ VGS= 10 V. These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanch ... | Original |
6 pages, |
v 250 c 45 NDP5060 NDB5060 NDP5060 abstract |
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| Abstract: APT11058JFLL APT11058JFLL 1100V 18A POWER MOS 7 R FREDFET 0.580 S S 27 ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. · Lower Input Capacitance · Lower ... | Original |
5 pages, |
APT11058JFLL APT11058JFLL abstract |
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| Abstract: Advanced Technical Information GaAs - Diodes Voltage Current VRRM IDC Package style Type Version Contents VF Circuit Diagram Page V TO-220 AB © 1999 IXYS All rights reserved 1 1 150/180 150/180 10 20 1.1 0.9 DGS 10 DGS 20 A A D7 - 2 D7 - 3 150/180 150/180 2x 10 2x 20 1.1 0.9 DGSK 20 DGSK 40 A A D7 - 4 D7 - 5 1 1 220/250 220/250 10 20 1.5 1.1 DGS 10 DGS 20 A A D7 - 6 D7 - 7 2 ... | Original |
9 pages, |
datasheet abstract |
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| Abstract: October 1996 NDP5060 NDP5060 / NDB5060 NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 26 A, 60 V. RDS(ON) = 0.05 @ VGS= 10 V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche an ... | Original |
12 pages, |
CBVK741B019 EO70 F63TNR FDP7060 L86Z m 9835 NDB5060 NDP4060L NDP5060 zener diode 3.0 b2 NDP5060 abstract |
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| Abstract: October 1996 NDP5060 NDP5060 / NDB5060 NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 26 A, 60 V. RDS(ON) = 0.05 @ VGS= 10 V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche an ... | Original |
12 pages, |
NDP5060 NDP4060L NDB5060 L86Z FDP7060 F63TNR EO70 CBVK741B019 NDP5060 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| * * LVCP23 LVCP23 LVCP23 LVCP23 encrypted netlist * * * Netlist Pin and Signal Names * * Pin Signal Description * * 1 SEL1 Mode Select * 2 SEL0 Mode Select * 3 INO+ Receiver Input * 4 INO- Receiver Input * 5 VCC Power * 6 www.datasheetarchive.com/download/95593476-918811ZC/sllc275.zip (lvcp23.inc) |
Texas Instruments | 06/08/2011 | 160.72 Kb | ZIP | sllc275.zip |
| Ixys Corp. Part | Ixys Description | Industry Part | Manufacturer | Description | Type |
| DGS20-018A Buy | VRRM (V)=180, IFAV (A)=17, @ TC (°C)=90, VF max @TVJM=125°C (V)=0.8, @ IF (A)=7.5 | MS16150 Buy | Microsemi | VRRM (V)=150, IFAV (A)=16, VF max @TVJM=125°C (V)=0.85 | Close |
| DGS20-018A Buy | VRRM (V)=180, IFAV (A)=17, @ TC (°C)=90, VF max @TVJM=125°C (V)=0.8, @ IF (A)=7.5 | MS16180 Buy | Microsemi | VRRM (V)=180, IFAV (A)=16, VF max @TVJM=125°C (V)=0.88 | Close |
| DGS20-018A Buy | VRRM (V)=180, IFAV (A)=17, @ TC (°C)=90, VF max @TVJM=125°C (V)=0.8, @ IF (A)=7.5 | MS20180 Buy | Microsemi | VRRM (V)=180, IFAV (A)=20, VF max @TVJM=125°C (V)=0.85 | Close |
| DGS20-025A Buy | VRRM (V)=250, IFAV (A)=13, @ TC (°C)=90, VF max @TVJM=125°C (V)=1.3, @ IF (A)=7.5 | MS16200 Buy | Microsemi | VRRM (V)=200, IFAV (A)=16, VF max @TVJM=125°C (V)=0.88 | Close |