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LT3748EMS#TRPBF Linear Technology LT3748 - 100V Isolated Flyback Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3748HMS#TRPBF Linear Technology LT3748 - 100V Isolated Flyback Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LT3748IMS#PBF Linear Technology LT3748 - 100V Isolated Flyback Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3748EMS#PBF Linear Technology LT3748 - 100V Isolated Flyback Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3748HMS#PBF Linear Technology LT3748 - 100V Isolated Flyback Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LT3748IMS#TRPBF Linear Technology LT3748 - 100V Isolated Flyback Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

DARLINGTON 30A 100V npn

Catalog Datasheet MFG & Type PDF Document Tags

DARLINGTON 30A 100V npn

Abstract: CJD122 NPN CJD127 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122 and CJD127 are complementary silicon power Darlington transistors manufactured in a surface mount package designed for low , CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN VCE=50V VCE=100V, VBE(off)=1.5V VCE=100V, VBE(off)=1.5V, TC=125°C VCB=100V VEB=5.0V IC=30mA 100 IC=4.0A, IB=16mA IC=8.0A, IB=80mA IC
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DARLINGTON 30A 100V npn

DARLINGTON 30A 100V npn

Abstract: darlington complementary power amplifier CJD122 NPN CJD127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Central TM , Corp. CJD122 NPN CJD127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DPAK TRANSISTOR , Power Darlington Transistors manufactured in a surface mount package designed for low speed switching , CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=50V ICEV VCE=100V, VBE(off)=1.5V ICEV VCE=100V, VBE(off)=1.5V, TC=125oC ICBO VCB=100V IEBO VEB=5.0V BVCEO IC
Central Semiconductor
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darlington complementary power amplifier darlington 40A SILICON COMPLEMENTARY transistors darlington power darlington dpak code Darlington 30A

darlington 40A

Abstract: CJD122 NPN CJD127 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122 and CJD127 are complementary silicon power Darlington transistors manufactured in a surface mount package designed for low , MIN VCE=50V VCE=100V, VBE(off)=1.5V VCE=100V, VBE(off)=1.5V, TC=125°C VCB=100V VEB=5.0V IC=30mA 100 IC , =8.0A 100 VCE=4.0V, IC=3.0A, f=1.0MHz 4.0 VCB=10V, IE=0, f=1.0MHz (CJD122) VCB=10V, IE=0, f=1.0MHz (CJD127
Central Semiconductor
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DARLINGTON 30A 100V npn

Abstract: TO3 package SEME PMD18D100 LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm , PACKAGE 100V 100A PEAK 300 WATTS 16.9 39.5 max. 4.2 DESCRIPTION 10.9 The PMD18D100 is an NPN Darlington Power Transistor in a hermetic TO3 package. The device is a monolothic epitaxial , 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 100V 100V 5V 50A 100A 1.5A 300W -65 to 200°C 0.4°C/W Prelim. 10/99 SEME PMD18D100 LAB
Semelab
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TO3 package 2.2KW darlington 300w

TIP120

Abstract: TIP122 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP120/121/122 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector , ~150 W SavantIC Semiconductor Product Specification Silicon NPN Darlington Power , Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions , Silicon NPN Darlington Power Transistors 4 TIP120/121/122 -
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TIP120 TIP122 tip120 darlington equivalent of TIP122 tip121 tip122v TIP125/126/127 TIP121
Abstract: ) 376-2922 PMD18D100 NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES â'¢ TO3 PACKAGE â'¢ 100V â'¢ 100APEAK L â'¢ 300 WATTS *.* DESCRIPTION TO3 Package. The PMD18D100 is an NPN Darlington Power Transistor in a hermetic TO3 package. The device is , Dissipation at Tcase= 50°C Operating Junction and Storage Temperature Thermal Resistance 100V 100V 5V , 30A IB = 120mA &/u Units 2 V VCE = 3V 2.8 V IC = 30A IB = 120mA 2.8 New Jersey Semiconductor
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d marking code dpak transistor

Abstract: 147 B transistor CJD122 NPN CJD127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Central" semiconductor , Power Darlington Transistors manufactured in a surface mount package designed for low speed switching , UNITS VA ma ma ma VCE=100V, v BE(off)=1-5V VCE=100V, VßE(off)=1-SV, TC=125°C VCB=100V VEB=5.0V lQ , c e =4.0V, Iq =8.0A V c e =4.0V, IC=3.0A, f=1.0MHz VCB=10V, lE=0, f=1.0MHz (CJD122) VCB=10V, lE=0, f=1.0MHz (CJD127) VCE=4.0V, lc =3.0A, f=1.0kHz 1000 100 4.0 100 mA V V V V V VCE(SAT) VCE(SAT) VBE(SAT) v BE
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OCR Scan
d marking code dpak transistor 147 B transistor

TRANSISTOR S 813

Abstract: CJD122 NPN CJD127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Central" Semiconductor , Central Semiconductor Corp. CJD122 NPN CJD127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR , Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier , VCE(SAT) VCE(SAT) VBE(SAT) v BE(ON) V q E=50V MAX VCE=100V>v BE(off)=15V VCE=100V, VBE(off)=1.5V, TC=125°C VCB=100V VEB=5.0V 10 10 500 10 2.0 UNITS MA ma mA MA mA V V V hpE
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TRANSISTOR S 813 CP117 CP517

Darlington 40A

Abstract: CJD122 CJD122 NPN CJD127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w , Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low , : (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=50V ICEV VCE=100V, VBE(off)=1.5V ICEV VCE=100V, VBE(off)=1.5V, TC=125°C ICBO VCB=100V IEBO VEB=5.0V BVCEO IC=30mA 100 VCE , =4.0A hFE VCE=4.0V, IC=4.0A 1000 hFE VCE=4.0V, IC=8.0A 100 fT VCE=4.0V, IC=3.0A, f=1.0MHz 4.0 Cob
Central Semiconductor
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transistor darlington npn

Abstract: DARLINGTON 30A 100V npn Semiconductor Corp. CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR SOT , Central CZT122 NPN CZT127 PNP TM Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed , MAX ICEO ICBO VCE=50V VCB=100V 500 µA 200 µA IEBO BVCEO VEB=5.0V 2.0
Central Semiconductor
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transistor darlington npn power darlington npn transistor

equivalent of TIP122

Abstract: TIP120 Inchange Semiconductor Product Specification TIP120/121/122 Silicon NPN Darlington Power Transistors DESCRIPTION With TO-220C package DARLINGTON High DC current gain Low collector saturation , Semiconductor Product Specification TIP120/121/122 Silicon NPN Darlington Power Transistors , Specification TIP120/121/122 Silicon NPN Darlington Power Transistors PACKAGE OUTLINE E SEM , Product Specification TIP120/121/122 Silicon NPN Darlington Power Transistors E SEM NG
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DARLINGTON 3A 100V npn tip122 data

pd 223

Abstract: CZT122 Central CZT122 NPN CZT127 PNP TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low , CONDITIONS MIN MAX UNITS 500 µA ICEO ICBO VCE=50V VCB=100V 200 µA IEBO BVCEO VEB=5.0V 2.0 mA VCE(SAT) IC=30mA IC=3.0A, IB=12mA VCE(SAT) VBE(ON) IC=5.0A, IB
Central Semiconductor
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pd 223
Abstract: CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Centrar Semiconductor , TM Semiconductor Corp. CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR , Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier , 0 JA (Ta =25°C unless otherwise noted) MIN MAX 500 200 2.0 UNITS mA mA Vc e =50V VCB=100V V e b =5.0V lQ=30mA lc =3.0A, lB=12mA lc =5.0A, lB=20mA Vc e =3.0V, lc =3.0A Vc e =3.0V, lc =500mA -
OCR Scan
Abstract: CZT122 NPN CZT127 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low , ICBO IEBO BVCEO VCE(SAT) VCE(SAT) VBE(ON) VCBO VCEO VCE=50V VCB=100V VEB=5.0V IC=30mA 100 IC=3.0A, IB=12mA IC=5.0A, IB=20mA hFE hFE VCE=3.0V, IC=3.0A VCE=3.0V, IC=500mA VCE -
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Darlington 30A

Abstract: DARLINGTON 30A 100V npn CZT122 NPN CZT127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w , Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low , noted) SYMBOL TEST CONDITIONS MAX UNITS ICEO VCE=50V 500 µA ICBO VCB=100V , fT MIN 100 IC=3.0A, IB=12mA IC=5.0A, IB=20mA VCE=3.0V, IC=3.0A VCE=3.0V, IC=500mA VCE=3.0V, IC=3.0A Cob VCE=4.0V, IC=3.0A, f=1.0MHz VCB=10V, IE=0, f=1.0MHz (CZT122) Cob VCB=10V, IE
Central Semiconductor
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300 W npn darlington power transistors

IRF9210

Abstract: darlington NPN 600V 8a transistor , AMP, 160V, 0.5A, SOT-23, T&R TR, PNP, HI-VOLT, 300V, 0.5A, SOT-23, T&R TR, NPN, DARLINGTON, 100V, 2A, D-PAK, T&R TR, NPN, DARLINGTON, 100V, 2A, l-PAK TR, PNP, DARLINGTON, 100V, 2A, D-PAK, T&R TR, PNP, DARLINGTON, 100V, 2A, l-PAK TR, NPN, DARLINGTON, 100V, 8A, D-PAK, T&R TR, NPN, DARLINGTON, 100V, 8A, l-PAK TR, PNP, DARLINGTON, 100V, 8A, D-PAK, T&R TR, PNP, DARLINGTON, 100V, 8A, l-PAK TR, PNP, GP, 60V, 10A , TR, NPN, GP, 100V, 1A, D-PAK, T&R TR, NPN, GP, 100V, 1A, l-PAK TR, PNP, GP, 100V, 1A, D-PAK, T&R TR
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OCR Scan
KSH117-1 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088

DARLINGTON 3A 100V npn

Abstract: 2SD560 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601 APPLICATIONS ·Designed for low , Websitewww.iscsemi.cn 2SD560 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington , INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Websitewww.iscsemi.cn isc
INCHANGE Semiconductor
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darlington power transistor ic 3A hfe 500 NPN Transistor 5V DARLINGTON Darlington NPN Silicon Diode 2SD560 transistor 3A 100V npn LOW SATURATION VOLTAGE VCC50V
Abstract: CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Central" semiconductor , Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier , =25°C unless otherwise noted) MIN °C/W MAX 500 200 2.0 UNITS mA mA VCE=50V VCB=100V V e b =5.0V lQ=30mA lc =3.0A, lB=12mA IC=5.0A, lB=20mA Vc e =3.0V, lc =3.0A Vc e = 3.0V, lc =500mA Vc e =3.0V, lc =3.0A Vc e =4.0V, lc =3.0A, f=1.0MHz VCB=10V, lE=0, f=1.0MHz (CZT122) VCB=10V, lE=0, f=1.0MHz (CZT127) 1000 -
OCR Scan

transistor A431

Abstract: MA3232 ;BVEBO-15V min;IC-3.0A max. Pt-2.0W max;BVCBO-100V min;BVCE0-80V min;BVEB0-15V min;IC-3.0A max. Pt , -15V min;IC-3.0A max. Pt-2.0W max;BVCBO-100V min;BVCEO-80V min;BVEB0-15V min;IC-3.0A max. Pt-2.0W max;BVCB0 , °C * - 45°C 100°C or greater # - 50°C ♦ - 80° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" , -30V; BVEB0-30. Pc-.6W max;hFE1/hFE2-.80 min;hFE-20 min at ,20mA;AVoff-100uV max. Pc-10W max; BVCBO-30V; lc-3.0A , L35 Pc-lOW max; BVCBO-30V; lc-3.0A max;hFE-15000/VCE-5.0V; Ic1.OA. Pd 25W;VCEV 80V;lc 7A max;hFE 1.0k
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OCR Scan
BVCE0-60V transistor A431 MA3232 UD1001 A431 transistor FT4017 MT42a B0-60V BVCEO-40V FE-3000 BVCE0-40V MHM1201 MHM2001

UD1001

Abstract: FT4017 ;BVEBO-15V min;IC-3.0A max. Pt-2.0W max;BVCBO-100V min;BVCE0-80V min;BVEB0-15V min;IC-3.0A max. Pt , -15V min;IC-3.0A max. Pt-2.0W max;BVCBO-100V min;BVCEO-80V min;BVEB0-15V min;IC-3.0A max. Pt-2.0W max;BVCB0 , IVI (A) (A) 1 (A) 8. GERMANIUM PNP| 9. GERMANIUM NPN110. SILICON PNP|ll. SILICON NPN High Power , 34 35 36 RM5008D RM8007D DD12J 400m 400m 450m 3.0A 3.0A 5.5 A 5.0* 5.0* 15 15 30 30 100m 1 .On 100p , ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor
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OCR Scan
CA3036 UC340 UC850 DM01B DM02B L0NA MHM201 VCEO-40V VEBO-12V TJ-125 BVCB0-60V MHM2013
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