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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

D4 diode top mark

Catalog Datasheet MFG & Type PDF Document Tags

D4 diode top mark

Abstract: MARK A SOD323 Mark Top View max. .049 (1.25) max. .006 (0.15) .059 (1.5) .043 (1.1) max. .004 (0.1) TV , Mark Top View Top View max. .006 (0.15) max. .004 (0.1) max. .053 (1.35) max. .004 , Cathode Mark Top View Top View max. .006 (0.15) max. .004 (0.1) max. .053 (1.35) max , (1.95) .065 (1.65) Cathode Mark Cathode Mark Top View Top View max. .006 (0.15) max , Diode Switches For electronic bandswitching in radio and TV tuners in the frequency range of 50 .
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D4 diode top mark

Abstract: 102k 50v capacitor ) (0603) U1 200mA, 40V pnp bipolar transistor (SOT23) Central Semiconductor CMPT3906 (top mark C2A) Fairchild MMBT3906 (top mark 2A) 1 R9 3.3µH, 3A inductor Sumida CDRH6D28-3R3 Q1 1 200mA, 40V npn bipolar transistor (SOT23) Central Semiconductor CMPT3904 (top mark C1A) Fairchild MMBT3904 (top mark 1A) 95.3k ±1% resistor (0603) Q2 Not installed (SOT23) 200mA, 100V, dual, ultra-fast diode (SOT23) Central Semiconductor CMPD6001S (top mark ULS) 2-pin header JU4
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MAX1518 MAX1518EVKIT C1608C0G1H221K 16MV100UAX D4 diode top mark 102k 50v capacitor C1 100uf 16V ec20qs03l

MMBT4148

Abstract: SANYO 16AQU10M C22 1 1 1.0A, 30V Schottky diode (S-flat) Nihon EP10QY03 (top mark Y9k) or Toshiba CRS02 (top mark S2) Q2, Q3 2 Q4, Q5 2 R1 1 110k ± 1% resistor (0603) R2, R6, R8, R10 , dual diodes (SOT23) Fairchild MMBT4148SE (top mark D4) or Central Semiconductor CMPD7000 (top mark , bipolar transistors (SOT23) Fairchild MMBT3906 (top mark 2A) or Central Semiconductor CMPT3906 (top mark C2A) 200mA, 40V npn bipolar transistors (SOT23) Fairchild MMBT3904 (top mark 1A) or Central
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MAX1513 MAX1514 MMBT4148 SANYO 16AQU10M step-up switching 3A 16AQU10M sot223 transistor fairchild NPN 3A 4.5V to 100v input regulator MAX1513/MAX1514

PA2669NL

Abstract: GRM21BR72A104k D1 1 56.7V, 600W transient voltage suppressor (SMB) Fairchild SMBJ51A (Top Mark: MZ) D2 1 100V, 2A diode rectifier (SMB) Diodes Inc. ES2B-13-F D3, D4 2 200V, 1A bridge rectifiers (MiniDIP) Diodes Inc. HD02 1 27V, 500mW zener diode (SOD123) Diodes Inc. BZT52C27 (Top Mark: WP) D6 1 75V, 150mA switching diode (SOD323) Diodes Inc. 1N4148WS (Top Mark: T4 or T6 , inductor Cooper Bussmann SD53-3R3-R (Top Mark: C) C15 1 8200pF Q10%, 25V X7R ceramic capacitor
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MAX5965 MAX5971 PA2669NL GRM21BR72A104k 63CE68FS CONNECTOR kit for RJ45 RJ45-MAG MAX5969B MAX5969B/MAX5969A MAX5969A/MAX5969B

toshiba lcd power board schematic

Abstract: EMK316BJ226ML 100V, 200mA dual ultra-fast diodes (SOT23) Fairchild MMBD4148SE (Top Mark: D4) Central Semiconductor CMPD1001S Lead Free (Top Mark: L21) 158k ±1% resistor (0603) 13.3k ±1% resistors (0603) 1 82.5k , 3 - D6 100V, 200mA single ultra-fast diode (SOT23) Fairchild MMBD4148 (Top Mark: 5H) Central Semiconductor CMPD1001 Lead Free (Top Mark: L20) R12, R13, R20 R14, R21, R22, R23 , inductor (1.8mm height) TOKO 1124BS-2R4M (2.4µH) Würth 744052002 (2.5µH) D1, D2 D3, D4, D5 1
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MAX17014 toshiba lcd power board schematic EMK316BJ226ML toko negative VOLTAGE REGULATOR C1608X7R1H104K C3216X5R1C106M GRM188R71C105K

transformer 220V to 12V 500mA

Abstract: transformer from 230V AC to 9V ac 500ma zener diode (SOD123) Fairchild MMSZ5229B (Top Mark: D4) 1 1.75A, 63V fuse 1 220pF Q5%, 50V , (0603) Murata GRM188R71H104K D3 1 36V zener diode (SOD323) Fairchild MM3Z36VC (Top Mark: ZV , LED driver with integrated switch (10 TDFN-EP) Maxim MAX16840ATB+ (Top Mark: AWY) - 1 PCB , ) Central Semi CMPT3904E (Top Mark: C1AE) 30V, 50mA, dual npn transistor (SOT363) Central Semi CMKT5088 (Top Mark: K88) R1 1 100I Q5% resistor (0603) R2 1 1kI Q5% resistor (0603) R3 1
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MAX16840 transformer 220V to 12V 500mA transformer from 230V AC to 9V ac 500ma Led driver 50W schematic top YT150 transformer 120v to 9v 230v AC to 18V ac 1a transformer GRM21BR71E334K MAX16840EVKIT

D4 diode top mark

Abstract: BB729 ) Cathode Mark .112 (2.85) .100 (2.55) .076 (1.95) .065 (1.65) Top View max. .004 (0.1) max , ) max. .006 (0.15) Top View max. .049 (1.25) .112 (2.85) .100 (2.55) .152 (3.85) .140 (3.55) Cathode Mark min. .010 (0.25) min. .010 (0.25) Dimensions in inches and (millimeters , diode is also available in SOD-323 case with the type designation BB729S. BB729 Case: SOD , BB729S Package Type D4 BB729 Packaging Code 7" Reel 3.000 pcs. BB729 and BB729S
General Semiconductor
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CTV TUNER C419 BB729/D3

C2785

Abstract: transistor B1202 74HC04 For part change For alternative part For diode change 8 ´4 Silk change due to CE mark , E 4900-080 Harness 25-0263 Remarks 1 1 21 20 Top Case OP Sheet Q'ty , 400-041 E 413-033 E 405-130 Diode Diode Diode Zener Diode Zener Diode 1S1554 1S1588 1S2076 , R20 102M 4 C21 R11 25V 10m 1 5267-17A MARK SN-20202-1218 TR7 SW1 E , C2785 C2785 E TR3 R4 R1 + 50V 1m D4 1 8 8 1S2076A 1S2067 CN4
Japan CBM
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CBM-909PC-2D transistor B1202 transistor c2785 c2785 transistor transistor a1175 a1175 transistor M9-1-332J DP3110 2SC4685 2SD1683 2SA1175 74LS07 2SD1802

MAX17113ETL

Abstract: CDRHD38 diodes (M-Flat) Toshiba CMS02(TE12L,Q) D3, D4, D5 D6 3 1 200mA, 100V dual ultra-fast diodes (SOT23) Fairchild MMBD4148SE (Top Mark: D4) Central Semi CMPD1001S Lead Free (Top Mark: L21) 200mA, 100V single ultra-fast diode (SOT23) Fairchild MMBD4148 (Top Mark: 5H) Central Semi CMPD1001 Lead Free (Top Mark: L20) R3 1 158kI Q1% resistor (0603) R4, R17 2 13.3kI Q1 , (through diode D6) or to PGND. Table 6 lists the selectable JU6 jumper options. High-Voltage
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MAX17113ETL CDRHD38 MAX17113 MAX17113EVKIT
Abstract: top left of the die when the die is orientated so that the mark is read in the normal fashion , Characteristics Electrical Characteristics (TA = 25 °C unless otherwise noted) Zener Diode Breakdown Voltage @ 1 mA Leakage Current @ 3 V Diode Capacitance @ 1 V & 1 MHz ESD Performance (Note 1 & 2 , BOURNS LOGO D4 45 ± 45 (1.78 ± 1.78) 45 ± 45 (1.78 ± 1.78) DIMENSIONS = MICRONS , is the ESD performance. EXT1-12 ±6.5 V Key Design Parameters Zener Diode VBR: 6 V Min, 8 Bourns
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IEC61000-4-2 2DAC-C16R EXT10 EXT11 EXT12

2DAC-C16R

Abstract: Zener Diode LF marking ) Zener Diode Breakdown Voltage @ 1 mA Leakage Current @ 3 V Diode Capacitance @ 1 V & 1 MHz ESD , (9.78 ± 1.78) B4 C4 BOURNS LOGO D4 45 ± 45 (1.78 ± 1.78) 45 ± 45 (1.78 ± 1.78 , is the ESD performance. EXT1-12 ±6.5 V Key Design Parameters Zener Diode VBR: 6 V Min, 8 V , following Fig. 5 scheme below. Position A1, on the Bump Grid is located at the top left of the die when the die is orientated so that the mark is read in the normal fashion. EXT12 ±6.5 V PIN A1
Bourns
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Zener Diode LF marking

2DAC-C16R

Abstract: located at the top left of the die when the die is orientated so that the mark is read in the normal , Characteristics Electrical Characteristics (TA = 25 °C unless otherwise noted) Zener Diode Breakdown Voltage @ 1 mA Leakage Current @ 3 V Diode Capacitance @ 1 V & 1 MHz ESD Performance (Note 1 & 2 , 20 (8.86 ± 0.79) 248.5 ± 45 (9.78 ± 1.78) B4 C4 BOURNS LOGO D4 45 ± 45 (1.78 ± , Design Parameters Zener Diode VBR: 6 V Min, 8 V Max @ IBR = 1 mA IR: 1 uA Max @ VR = 3 V CT: 8.5 pF
Bourns
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2DAC-C16R

Abstract: , on the Bump Grid is located at the top left of the die when the die is orientated so that the mark , (TA = 25 °C unless otherwise noted) Zener Diode Breakdown Voltage @ 1 mA Leakage Current @ 3 V Diode Capacitance @ 1 V & 1 MHz ESD Performance (Note 1 & 2) Withstand Contact Discharge Air , D4 45 ± 45 (1.78 ± 1.78) 45 ± 45 (1.78 ± 1.78) DIMENSIONS = MICRONS (MILS) 1997 ± , -12 ±6.5 V Key Design Parameters Zener Diode VBR: 6 V Min, 8 V Max @ IBR = 1 mA IR: 1 uA Max @ VR = 3
Bourns
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J115 MOSFET

Abstract: 2N7002 MARK 702 MAX1538ETI (28-pin QFN) U2 1 Maxim MAX1615EUK (5-pin SOT23) Top mark = ABZD U3, U4 2 Maxim MAX6817EUT (6-pin SOT23) Top mark = AAAU None 1 MAX1538 EV Kit PC board D1 D2, D3, D4 J1 1 Dual diode (SOT23) Central Semiconductor CMPD3003C Top mark = LLC 3 Green surface-mount , 2N7002 Top mark = 702 P1­P8 8 30V P-channel MOSFETs (8-pin SO) Fairchild FDS6679 Not , . 15) Enable the electronic load. 16) Verify that LED D3 is lit and that LEDs D2 and D4 are not lit
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MAX1538EVKIT J115 MOSFET 2N7002 MARK 702 SOT23 MARK 702 n-channel LRC-LRF1225-01-R010-F TPSE476M035R0250 75VDC 28VDC C1608X5R1A105M MAX6817

poe splitter circuit

Abstract: MAGJACK application pcb (Top Mark: NG-with a single cathode band at one end; band aligns with band on silkscreen) D4 1 , . SMBJ60A-13-F D6 1 100mA, 30V Schottky diode (SOD323) Diodes Inc. CMDSH-3 (Top Mark: S1 , ) Fairchild 1N4148WS (Top Mark: S1) D2 1 1.0FF Q10%, 6.3V X5R ceramic capacitor (0603) AVX , (3 SuperSOT) Fairchild FDN304P (Top Mark: 304) R1 1 9.09kI Q1% 1/2W resistor (2010 , TinyLogicM UHS dual buffer with Schmitt trigger inputs (6 SC70) Fairchild NC7WZ17P6X (Top Mark: Z17) U6
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poe splitter circuit MAGJACK application pcb MAX5971A RJ45 lan female jack 0826-1X1T 08261X1TGH-F MAX5971B 10/100/1000BASE-TX MAX5971BEVKIT

D2-D41

Abstract: Pin 2 Detail A x25 d4 2 d3 L1 d1 7xe d2 Top View b A A1 Seating Plane Bottom View b L , 3.0A -65 C to +150OC 1.0W 1.0W 2 10 26-Lead LLGA (G1) (top view) 4 5 6 1 A B C D E F G H 2 3 7 8 , Packaging 26-Ball fpBGA (GA) (top view) Package may or may not include the following marks: Si or , switch isolation diode current -30 -58 -60 5.0 25 Output voltage spike 150 5.0 1.0 5.0 5.0 20 20 20 300 , D3 D4 D5 D6 D7 LE L L L L L L L L L L L L L L L L H X CLK L L L L L L L L L L L L L L L L L H Hold
Supertex
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D2-D41 HV230 DSPD-26 A092208 DSFP-HV230 B080111

D4 diode top mark

Abstract: /2) Pin 1 1 Detail B e Pin 2 Detail A x25 d4 2 d3 L1 d1 7xe d2 Top View b A , /2) Pin 1 Detail B e Pin 2 Detail A x25 d4 2 d3 L1 d1 7xe d2 Top View b A A1 , (top view) * This package is not recommended for new designs Use 26-Lead LLGA (G1) 26 18 26 , recommended for new designs - Use 26-Lead LLGA (G1) A 26-Lead LLGA (G1) (top view) 4 5 6 1 2 3 7 8 9 , Packaging 26-Ball fpBGA (GA) (top view) Package may or may not include the following marks: Si or
Supertex
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A082609

J115 mosfet

Abstract: 2N7002 MARK 702 MAX1538ETI (28-pin QFN) 1 Dual diode (SOT23) Central Semiconductor CMPD3003C Top mark = LLC U2 1 Maxim MAX1615EUK (5-pin SOT23) Top mark = ABZD U3, U4 2 Maxim MAX6817EUT (6-pin SOT23) Top mark = AAAU None 1 MAX1538 EV Kit PC board 0 3 Green surface-mount LEDs (SS , Top mark = 702 P1­P8 8 30V P-channel MOSFETs (8-pin SO) Fairchild FDS6679 R1 1 100k , , C5, C6 C7, C11 C8, C9 C10 C12, C13 C14 D1 D2, D3, D4 J1 DESCRIPTION 5 Not
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abzd TPSE476M035R0200 C1608X7R1H104M

ultrasound piezoelectric design datasheet

Abstract: HV230 e Detail A x25 Pin 2 2 d4 d3 L1 d1 7xe d2 Bottom View Top View b , )* (top view) * This package is not recommended for new designs Use 26-Lead LLGA (G1) 3.0A 26 , Sealed L = Lot Number = "Green" Packaging (top view) 1 2 3 4 5 6 7 8 9 A B C D E F G H 26-Ball fpBGA (GA) (top view) 26-Ball fpBGA (GA) 1235 Bordeaux Drive , crosstalk IID +VSPK -VSPK Output switch isolation diode current On capacitance SW to GND
Supertex
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ultrasound piezoelectric design datasheet A102108
Abstract: (top view) * This package is not recommended for new designs Use 26-Lead LLGA (G1) 26 18 26 , recommended for new designs - Use 26-Lead LLGA (G1) A 26-Lead LLGA (G1) (top view) 4 5 6 1 2 3 7 8 9 , Packaging 26-Ball fpBGA (GA) (top view) Package may or may not include the following marks: Si or , switch isolation diode current -30 -58 -60 5.0 25 Output voltage spike 150 5.0 1.0 5.0 5.0 20 20 20 300 , Truth Table D0 L H L H L H L H L H L H L H L H X X X X X X X X X X X X X X X X D1 D2 D3 D4 D5 D6 D7 LE Supertex
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A071009
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