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ISL9014AIRBCZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRFCZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRJBZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRKCZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRKPZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9014AIRNCZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy

D 9014 C TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

BR 9014 transistor

Abstract: BR 9014 ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , 100 - 300 - C hFE 200 - 600 - D hFE 400 - 1000 - V(BR , ST 9014 VCE=5V 5 4 3 400 2 10 P tot 300 IC Tamb=100 o C 5 4 o 25 C , =25 C 5 4 2 5 o 7 5 10 2 ST 9014 v=0 2 10 -1 10 -6 3 tp v= T
Semtech Electronics
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transistor 9014 C npn

Abstract: V. 9014 c HN 9014 NPN Silicon Expitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C, and ] ^^ D, according to its DC current gain. As complementary type the PNP transistor HN 9015 is recommended. 3 c E On special request, these , .0o.55 TRANSISTOR PACKAGE OUTLINE" on page 80 for the 2.5 available pin options. â'"^ E ;0 0 0 C B TO-92 Plastic , Group A B C D hFE hFE hFE hFE 60 100 200 400 - 150 300 600 1000 - Collector Saturation Voltage at lc =
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BR 9014

Abstract: 9014 ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , versus collector current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 , versus collector current dB 20 18 ST 9014 14 dB 20 VCE=5V f=1KHz Tamb=25o C 18 , 9014 I C=0.2mA R G =2K f=1KHz f=200Hz Tamb=25o C 14 12 10 1K 8 10 8 6 6 500
Semtech Electronics
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BR 9014

Abstract: BR 9014 transistor ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , VCE=10V 3 0.05 r thA Tamb=25 C 5 4 2 5 o 7 5 10 2 ST 9014 v , voltage versus collector current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 , Noise figure versus collector current dB 20 18 ST 9014 VCE=5V f=1KHz Tamb=25o C 14 dB
Semtech Electronics
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BR 9014

Abstract: BR 9014 transistor ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , 100 - 300 - C hFE 200 - 600 - D hFE 400 - 1000 - V(BR , ST 9014 VCE=5V 5 4 3 400 2 10 P tot 300 IC Tamb=100 oC 5 4 o 25 C , =25 C 5 4 2 5 o 7 5 10 2 ST 9014 v=0 2 10 -1 10 -6 3 tp v= T
Semtech Electronics
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BR 9014

Abstract: BR 9014 c ) Rank Range A B C D 60-150 100-300 200-600 400-1000 S9014 Admissible power , S 9014 VCE=5V 5 4 3 400 2 10 P tot 300 IC Tamb=100 o C 5 4 o 25 C , versus collector current V 0.5 S 9014 S 9014 3 10 VCE=5V I C/I B =20 5 4 3 , versus collector current dB 20 18 S 9014 VCE=5V f=1KHz Tamb=25o C 14 dB 20 18 100K , TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER
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BR 9014 BR 9014 c BR 9014 transistor transistors BR 9014 TRANSISTOR 9014 V. 9014 c

B 9014 npn

Abstract: C 9014 transistor C E B C Packing Tape Box Bulk 1 of 3 QW-R201-031.B 9014 NPN SILICON TRANSISTOR , TECHNOLOGIES CO., LTD www.unisonic.com.tw C 200-600 D 400-1000 2 of 3 QW-R201-031.B 9014 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Static Characteristic 100 70 60 IB , UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW , Lead Free Plating 9014-x-T92-B 9014L-x-T92-B 9014-x-T92-K 9014L-x-T92-K Package
Unisonic Technologies
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9014L B 9014 npn C 9014 transistor 9014 transistor data sheet transistor 9014 npn data sheet transistor 9014 TRANSISTOR c 9014 9014L-

CP1005

Abstract: 9011 9012 9013 9014 9018  V7*. KM 9000 SERIES AM FM RADIO TRANSISTOR KIT SELECT ION GUIDE FOR AM FM RADIO TRANSISTOR KIT AM RECEIVER FM RECEIVER W FM RF KM 9016 Conv. IF) IF 2 KM90II KM 90H KM 9011 AF , IF AM/FM IF KM 9011/8 KM901I/8 KM90II/8 -î^-àm/I AF Amp. J KM 9014 Or KM90I5 AF A,np 2 , , AM CONVERTER to-92a à EBC KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 , DEVICE SPECIFICATIONS [Ta - 25°C unless otherwise specified ] MAXIMUM RATINGS ELECTRICAL
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CP1005 9011 9012 9013 9014 9018 transistor 9014 C npn 9011 NPN transistor 9011 transistor 9016 KM90I4 KM9015 KM90I
Abstract: © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-031.C 9014  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT , UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW , UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 200-600 D 400-1000 2 of 3 QW-R201-031.C , : Emitter B: Base C: Collector  TO-92 Pin Assignment 1 2 3 E B C E B C Packing Unisonic Technologies
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9014G-

transistor c 9018

Abstract: Transistor CL 100 RG = 50fi f = 100 MHz CLASSIFICATION OF HFE GROUPS -^(jiROUP TYPE A B C D E F G H 1 @ IC / VCE , r-t-1 fr AM FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Oulput , OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER , [Ta = 25°C unless otherwise specified] TYPE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS , (dB) tYP InA) max VCB (v) (v) typ max ic vCE (mA) (v) (v) typ max 'c 'B (mA) (mA) (MHz) min typ
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transistor c 9018 Transistor CL 100 transistor 9013 NPN audio output transistor 9014 NPN 9016 transistor audio output TRANSISTOR NPN 9013 T0-92B

9011 9012 9013 9014 9018

Abstract: 9011 NPN transistor 50fi f = 100 MHz CLASSIFICATION OF HFE GROUPS TYPE A B C D E F G H 1 @ IC / VCE CL9 011 CL 9016 CL , s Lì >J à .-« j&lA CL9000 SERIES AM FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM/FM RADIO TRANSISTOR KIT Oulput TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER CL 9016 NPN FM RF E Cl â'ž 0 o CL 9018 NPN AM/FM IF, FM CONVERTER C
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npn 9016 transistor F 9016 transistor 9018 transistor pnp transistor 9015 NPN 9013 transistor 9015 c

transistor npn c 9014

Abstract: 9014 NPN UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES , . UNIT V V V nA nA V V V pF MHz dB 1 QW-R201-031,A UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE RANK RANGE UTC A 60-150 B 100-300 C 200-600 UNISONIC , -92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise , ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS
Unisonic Technologies
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transistor npn c 9014 9014 NPN 9014

9014 ch

Abstract: transistor npn c 9014 ^-GROUP TYPE A B C D E F G H 1 @ IC ! VC KM 9011 KM 9016 KM 9018 - 28 - 45 39 - 60 54-80 72-108 97 - , Vi4». ¡;-i\> V IliÌ Vi- i m B bJ ;7*y V7l_l IlkaW AM. FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT TYPE POLARITY APPLICATIONS CASE KM 9011 NPN AM/FM IF, AM CONVERTER TO-92A à E6C KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 NPN AUDIO , - - 1 10 lC CmA) KM 9014 KM 9015 100 HFE 80 60 40 20 0
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9014 ch 100-10L 9018 Transistor-9013 h 9011 9012 pnp transistor

utc 9014

Abstract: C 9014 transistor TRANSISTOR CLASSIFICATION OF hFE RANK RANGE A 60-150 B 100-300 C 200-600 D 400-1000 , UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES , -92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise , 450 150 -55 ~ +150 V V V mA mW °C °C Collector-base voltage Collector-emitter voltage , ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS
Unisonic Technologies
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utc 9014 9014 current rating UTC9014 9014 transistor specification low noise transistor 9014 datasheet transistor 9014

Transistor BSX 24

Abstract: TRANSISTOR MPS -72 LEAD CODE TRANSISTOR FET 1 2 E S B D a c G TO-IB PHOTO TRANSISTOR T'S ,«S TO , DDDbflD b | Mechanical Outlines TO-Q2 LEAD CODE 2 3 A E B G B E C B C B E 0 D B C E E* C E B F* c B E , 6091788 MICRO ELECTRONICS CORP_ 82D 00646 D 7 ^ TJ?- '7 S2 DE | bDT17flfl OOObMt, b , 360 360 360 360 360 350 360 *C (mA) 100 50 50 100 100 100 100 200 200 200 200 100 300 100 200 200 200 , 800 500 300 180 110 500 500 500 800 - 400 * `c (mA) 10 1 1 10 10 10 10 2 2 2 2 50 5 10 2 2 2 2 2 2
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Transistor BSX 24 TRANSISTOR MPS TRANSISTOR MPS 3391 transistor MPS 2926 transistor 9015 BF 9014 transistor MELF-001 MELF-002 MELF-005 TQ-220A MELF006 L0T17

BR 9014

Abstract: BR 9014 transistor ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be , - B hFE 100 - 300 - C hFE 200 - 600 - D hFE 400 - , O Storage Temperature Range TS -55 to +150 O C C G S P FORM A IS AVAILABLE
Semtech Electronics
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BR 9015 9015 PNP transistor c 9015 transistors BR 9015 TS 9015 ST 9014 C

BR 9015

Abstract: transistor 9015 c ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be , 300 - C hFE 200 - 600 - D hFE 400 - 1000 - -V(BR)CBO 50 , O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD
Semtech Electronics
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BR 9015 C 9015* Transistor C 9015 transistor 9015 transistor ST 9015 C transistor 9014 c

br 9015

Abstract: pnp transistor 9015 ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be , 300 - C hFE 200 - 600 - D hFE 400 - 1000 - -V(BR)CBO 50 , O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD
Semtech Electronics
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ts 9014 9014 D c 9014 c 024 datasheet transistor 9015 pin configuration NPN transistor 9014

transistor 9014

Abstract: BR 9014 NPN SILICON TRANSISTOR 9014 TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO : 50 ELECTRICAL CHARACTERISTICS Parameter 2.BASE 1 2 3 3.COLLECTOR Tamb=25 unless otherwise specified Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic= 100 Collector-emitter , 60 1000 150 MHz f =30MHz CLASSIFICATION OF HFE(1) Rank A B C D Range
Wing Shing Computer Components
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BR 9014 C TRANSISTOR 9014 to-92

BR 9014

Abstract: BR 9015 ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base , mA Output Capacitance at -VCB = 10 V, f = 1 MHz C C Symbol A B C D Min. Max
Semtech Electronics
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9015 TO-92 af 9015 transistor
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