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Part Manufacturer Description Datasheet BUY
130094 TE Connectivity (130094) PIDG RING visit TE Connectivity
130090 TE Connectivity (130090) PIDG RING TONGUE visit TE Connectivity
130098 TE Connectivity Ltd TERM PLASTI-GRIP visit Digikey
1413009-9 TE Connectivity (1413009-9) V23086C2001A403 visit TE Connectivity
1-1589062-9 TE Connectivity (1-1589062-9) QCM044SC2DM012P = Circular visit TE Connectivity
1589809-3 TE Connectivity (1589809-3) STL015W6SN = THRU-HOLE visit TE Connectivity

D 13009 K

Catalog Datasheet MFG & Type PDF Document Tags

D 13009 K

Abstract: e 13009 f K/W T1.2/1999.0888 E 2786 Câ'"09 265 TELEFUNKEN ELECTRONIC TE 13008 â'¢ TE 13009 17E D , ^ OOO'îbMT 0 TE 13008 TE 13009 Silicon NPN Power Transistors Applications: Switching mode power supply , thermal resistance Junction case TE 13008 TE 13009 Collector-emitter voltage ^ceo 300 400 V ^ces 600 , cut-off current 850 V TE 13008 VCE= 1000 V TE 13009 VCE = 1000 V TE 13009 Collector-emitter breakdown voltage /c = 0.5A,ix=125mH TE 13008 TE 13009 Emitter-base breakdown voltage /E«1 mA Collector-emitter
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transistor E 13009

Abstract: transistor d 13009 subject to Changs without notice. bfci53T31 Doma? 1 N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 ESE D , 13009 j / j/ J S5E D bbSB^i ooniaa 3 T-33-13 RATINGS Limiting values in accordance with the , cut-off current I I-Z Ul S a. O _J ui > Ul a 5SE D â  bbS3T31 001^13^ 5 â  MJE 13008 MJE 13009 , /DISCRETE MJE 13008 MJE 13009 SSE D bbSBi3i oonmo i T-33-13 VCC=125V Fig. 3 Switching times waveforms , . MJE13008 13009 VCESM max. 600 700 V VCEO max. 300 400 V 1.5 8.0 12 24 100 A A A W MECHANICAL DATA
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transistor E 13009 transistor d 13009 D 13009 K E 13009 L transistor 13009 e 13009 f 53T31 T0-220

E 13009 2

Abstract: e 13009 l AflER PHILIPS/D IS CRETE MJE 13008 MJE 13009 V SSE D bbS3T31 001^133 3 â  T-33-13 RATINGS , = 1.25 K/W Rth j-a = 62.5 K/W N AUER PHI LIP S/ DIS CR ETE 5SE D â , 1988 619 / N AUER P H I L I P S /D IS CR ET E MJE 13008 MJE 13009 SSE D t bb53131 , specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass
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E 13009 2 EB 13009 D p 13009 EB 13009 transistor mje 13009 S3T31

transistor E 13009

Abstract: transistor d 13009 Emitter Sustaining Voltage: KSE13008 V c e o ( S U S ) : K S E 13009 Emitter Cutoff Current Iebo *DC , KSE13008/13009 DC CURRENT GAIN NPN SILICON TRANSISTOR BASE EMITTER SATURATION VOLTAGE U fe . D C , KSE13008/13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed , Characteristic : K S E 13008 : KSE13009 Collector Emitter Voltage: KSE13008 : KSE13009 Emitter Base Voltage , KSE13008/13009 POWER DERATING NPN SILICON TRANSISTOR 0 25 50 75 100 125 150 175
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13009 TRANSISTOR e13009 transistor E 13009 l E 13009 13009 NPN Transistor E 13009 TRANSISTOR KSE13008/13009

SR 13009

Abstract: E 13009 1Junction case Test Conditions j i Symbol R th J C Value 1.25 Unit K/W 164 Rev. D l , Collector-emitter voltage Test Conditions Type T E 13008 TE 13009 T E 13008 TE 13009 Symbol VcEO VcEO VCES VcES V , ' C Ic = 0.5 A; L = 125 mH; Imeasure = 100 mA V CE Type T E 13008 T E 13009 TE 13008 TE 13009 TE 13008 T E 13009 Symbol ·c e s ces Ic e s ICES V(BRICEO V(BR)CEO V(BR)EBO Min iy p Max 0.5 , VCb = 10 V; IE = 0; f = 1 MHz V cE sat VBEsal h pE hFE f? C cbo MHz pF I Rev. D l
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SR 13009 transistor sr 13009 13008 TRANSISTOR J 13009 - 2 j 13009 13009 K TE13008 TE13009

transistor E 13009

Abstract: D 13009 K Vcc= 125V, le = 8A s~ C D 4 b > > PI II 593 ELECTRONICS KSE13008/13009 DC , KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for , Collector Base Voltage : K S E 1 3008 : KSE13009 Collector Emitter Voltage : KSE13008 : K S E 1 3009 Emitter , : KSE13009 Emitter Cutoff Current * D C Current Gain * Collector Emitter Saturation Voltage Ie b o hpE , VOLTAGE h FE, D C CURRENT G A IN lr.(A>, C O L L E C T O R C U R R E N T COLLECTOR OUTPUT
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transistor b 595 transistor j 13009 13009 power transistor transistor switch 13009 transistor f 3009 E13008

D 13009 K

Abstract: p 13009 2.2±0.15 5 6 0.35±0.1 F(20:1) D±0.1 0.25±0.1 0.15MAX 1 2 mm HRS No , -1306-5- CL580-1300-9- 4 6 9 10 12 14 19 20 26 28 30 32 40 A 4.0 5.0 6.5 7.0 8.0 , 16.57 20.57 D 3.35 4.35 5.85 6.35 7.35 8.35 10.85 11.35 14.35 15.35 16.35 17.35 21.35 , B J±0.1 (0.2) K±0.1 (A) BFPC L±0.05 R0 0.3±0.05 E 3.3MIN( ) 2 , -1305-2- CL580-1307-8- CL580-1306-5- CL580-1300-9- 4 6 9 10 12 14 19 20 26 28 30 32 40
Hirose Electric
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DC100V 5mm-12mm OZ63-201C-50-9 FH3305 40S05SH 201C FH330 AC50V AC150V 1055H UL94V-0

D 13009 K

Abstract: 13006D (22.22) Switching Pos. Pos.1 2 1-K 1-A 1-A 1-C 1-C 1-D 1-D 2-K 2-C 2-C ý 130312 1.375 (34.92) 130313 1.375 (34.92) 4-K INTERCOM SWITCHES (Talk-Listen) Part Number Part Number Stack Height "X" &"Y" Switching ý3033T ý13033T .75 1-K ý3037T ý13037T .875 2-K + Add prefix "R" to part number if , 13004 ý 3006 ý 13006 ý 13006D ý 3006D ý 13009 Stack Hgt. "X" & "Y" (max.) .750 (19.05) .750 (19.05 , 1-A ý 3033 ý 13033 1-C ý 3034 ý 13034 2-A ý 3036 13036 ý 2-C ý 3036D 13036D 2-D 3-C 3037 ý 30312
Switchcraft
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P10531 T10711
Abstract: RIGHTS RESERVED. P LTR F MILITARY PART N U M B E R , 0 0 7 7 9 , M A R K E D ON O P P O S I , E D CONNECTORS N U M B E R S INDI CATI NG END CAVITIES . 0 6 2 2 . 0 1 0 HIGH C H A R A C T E , [2 .5 4 ] PY DM AMP SU LEI DE. C O N T AC T AREA, . 0 0 0 1 0 0 . 0 0 0 0 3 0 N I C K E L ENTI RE DO NOT L I N E S I N D I C A T I N G E V E R Y LI VE C A V I T I E S E X C E P T EN D CAVI TI ES, S T A R T I N G EROM . 4 9 5 MAX [1 2 . 5 7 ] & APVD B E R Y L L I U M -
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21SEP09 M55302/130-10 M55302/130-09 M55302/130-08 M55302/130-07 M55302/130-06

D 13009 K

Abstract: 13009 K (22.22) 1-C 1-C «3006 «13006 1.000(25.4) 2-C «3036D 013036D 1.0(25.4) 1-D 1-D «13006D 1.063(27.00) 2-D 3037 013037 .875 (22.22) 2-K 03006D «13009 1.219(30.96) 3-C «30312 0130312 1.375(34.92) 2-C I 2-C 30313 130313 1.375(34.92) 4-K INTERCOM SWITCHES (Talk-Listen) Part Number Part Number Stack Height "X" &"Y" Switching 03033T 013033T .75 1-K 03037T 013037T .875 2-K + Add prefix "R" to , 13000 Pos.1 [Pos. 2 03001 «13001 .750(19.05) 1-A 03033 «13033 .750 (19.05) 1-K «3003 Â
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A13001 13000 SERIES 13009 l 13009 applications AC 130-03 Series-3000 DQD5173

J 13009 - 2

Abstract: j 13009 O V mm* CAWG MATERIAL B 0 LTR R E V I S E D FJ 00- 0589-93 H . K Y . F REVISED J -13009 , 'OS . a B H J P /N ^ F I L L E D 66NYL0N CUL 9 4 V - 0 ) B L A C K . CONTACT , id / l \ t * *4 -fe . J» O Q z D z * (C IR C U IT N O .1) A * * ^ & : * 'J ^ V ' , E A 1 jjm MIN' T I N L E A D A T T I N E , O V E R Ni R E T E N T I O N L E G : 1 jjmMIN` T I N L E A D , O VE R N AMP WIRE RANGE R E V I S E D F J 00- 5344-96 S . T INSULATION DIA FINISH m m 0
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mj 13009 13009R J-12583 30-JAN

DO-213AA

Abstract: j 13009 S e c tio n is o rg a n iz e d b y a s c e n d in g P o w e r ( w a tts ), fo llo w e d by a s c e n d in g Vz {v o lts ) G e n e ra l Notes-. 1. in fo rm a tio n o n c o n ta c tin g M icroserns D iv is io n s c a n be o b ta in e d o n th e ba c k c o v e r c? th is -"atafoy 2. T y p e s p e c ifie , Spec Sheet ID (W) 11487 13008 13009 3819 3820 3821 2114 2115 5360 5361 5362 5363 8269 8270 8271 10066 , Scottsdale 1N 962B (D 07) Scottsdale JAN1N962B JAN1N962B-1 Scottsdale Scottsdale JAN1N962BUR-1 Scottsdale
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DO-213AA TA 8270 H Siemens+MTT+95+A+12+N DO-35 JANTXV1N758AUR-1 MLL75BA MLL758A-1 1N5736B
Abstract: ABZKU N C SN 164 A 13009 X CDF 1 5 ABZKUNCSN C D F 15 A B Z K M C S N 164 A 1 2 9 7 9 X , ,99 Part numbers S o c k e t c o n n e c t o r t in - p la t e d - s o ld e r p in a n g le d , C D F 37 ABZKU N C SN C D F 37 A B Z K M C S N 164 A 1 2 9 9 9 X 164 A 1 3 0 3 9 X P lu , 4 8 9 X 15 25 37 163 A 14529 X C D S 15 A F B Z K U N C S N C D S 15A FB ZKM C S N 163 A 1 4 4 9 9 X 163 A 1 4 5 3 9 X C D S 25 A FBZKU N C SN C D S 25 A F B Z K M C S N 163 -
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Abstract: 17.78 G .187 4.75 H 3.00 76.20 J .35 8.89 D E .250 5.75 6.35 146.05 K .660 , 11235-0003 (718) 934-4500 sales@minicircuits.com REV. A M127604 ZBSC-8-82+ ED-13009/2 HY/TD/AM 100615 Mini-Circuits
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UU1268 ZBSC-8-82-S ED-13009/2

transistor j 13009-2

Abstract: 13009-2 1.62 41.15 C .70 17.78 G .187 4.75 H 3.00 76.20 J .35 8.89 D E .250 5.75 6.35 146.05 K .660 16.76 F .810 20.57 wt grams 300 S-2 S-3 S-4 S-6 S , Mini-Circuits' website at www.minicircuits.com/MCLStore/terms.jsp. REV. OR M114913 ZBSC-8-82+ ED-13009/2
Mini-Circuits
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transistor j 13009-2 13009-2 transistor 13009-2 j 13009-2 M1149 transistor j 13009-2 data sheet 2002/95/EC

12533 6

Abstract: Drawing E 12 11 10 9 PCB Land Pattern J D TYP L K SQ TYP Demo Board MCL P/N: TB-10 Suggested PCB Layout (PL-012) 32X ø. 020 PTH FOR GROUND 13 14 A P 15 16 1 2 B 3 4 8 7 6 5 J D TYP N M S TYP R C , PATTERN FREE OF SOLDER MASK Outline Dimensions ( inch mm ) A B C D E F G H J K L M N P Q R S T wt , -117.69 -119.42 -122.16 -123.85 -125.33 -128.78 -130.09 -133.14 -134.80 -137.64 -139.36 *at 25oC unless
Mini-Circuits
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12533 6 ROS-2510-219 CK605 100KH
Abstract: Outline Drawing E 12 11 10 9 PCB Land Pattern J D TYP L K SQ TYP Demo Board MCL P/N: TB-10 Suggested PCB Layout (PL-012) 32X ø. 020 PTH FOR GROUND 13 14 A P 15 16 1 2 B 3 4 8 7 6 5 J D TYP N M , ) DENOTES COPPER LAND PATTERN FREE OF SOLDER MASK Outline Dimensions ( inch mm ) A B C D E F G H J K L , -94.68 -96.66 -104.12 -109.81 -113.46 -117.69 -119.42 -122.16 -123.85 -125.33 -128.78 -130.09 -133.14 Mini-Circuits
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Abstract: 8.89 D E .250 5.75 6.35 146.05 F .810 20.57 H 3.00 76.20 K .660 16.76 wt grams 300 , ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com REV. OR M114913 ZBSC-8-82+ ED-13009 Mini-Circuits
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1044-06

Abstract: D E F G H J .500 .500 .180 .100 .080 .115 .060 .040 .540 12.700 12.700 4.572 2.540 2.032 2.921 1.524 1.016 13.716 K .060 1.524 L M N P Q R S T .070 1.778 .100 .135 .135 .115 .140 .070 .150 2.540 3.429 , 129.17 130.09 3.40 3.15 2.76 2.21 2.97 2.68 2.29 1.75 2.19 1.60 0.76 -0.87 -37.12 -36.84
Mini-Circuits
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1044-06 ROS-EDR5368

transistor j 13009-2

Abstract: ZBSC-8-82-S 76.20 J .35 8.89 D E .250 5.75 6.35 146.05 K .660 16.76 F .810 20.57 wt grams , M127604 ZBSC-8-82+ ED-13009/2 HY/TD/AM 100615 Mini-Circuits
Mini-Circuits
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