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Curtice

Catalog Datasheet MFG & Type PDF Document Tags

Curtice

Abstract: fet curtice nonlinear model Statz model modifies Curtice's formulation, equation (1), by replacing the more computationally , the Curtice[2], the Statz-Pucel [3], and the TOM (Triquint's Own Model) [4]. The Curtice model was , range of biases however, CEL has found that the Curtice model doesn't fit the measured AC and DC , models are modified versions of the Curtice equation, we will first examine the Curtice model DC I-V , )/3] 3 ] ds The Curtice model defines the drain current with respect to the drain-source and
California Eastern Laboratories
Original
Curtice fet curtice nonlinear model LAMBDA alpha 400 fet curtice NE33200 Alpha 1000 GaAsFET AN1023 MTT-28 ED-34 MTT-38

Curtice

Abstract: LP3000 725 -0.25 -12 -12 MAX 1100 -2.0 125 UNITS mA µA V V °C/W Get Curtice Model , " diskette, or may be down-loaded from our Web Page. Get Curtice Model DSS-027 WG Phone: (408) 988-1845
Filtronic
Original
LP3000 MIL-HDBK-263 P100 LP3000/LPV3000 3000/LP MIL-STD-1686

Bjt 547

Abstract: OF BJT 547 Fundamentals Lab: Introduction to IC-CAP Day 3 Automated Extraction: Curtice MESFET Lab: Cgaashfax
Agilent Technologies
Original
Bjt 547 OF BJT 547 advanced design system DATASHEET OF BJT 547 N3231A N3231B 5988-2995EN

agilent pHEMT transistor

Abstract: agilent pHEMT transistor LNA LOW NOISE AMPLIFIER on the work of Curtice[3]. Although this model closely predicts the DC and small signal behavior , . Curtice, "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave
Agilent Technologies
Original
ATF-55143 ATF-54143 agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER transistor ajw bjt differential amplifier application circuits ATF-5X143 AN-1281 5988-9555EN

C882 TRANSISTOR

Abstract: ATF531P8 work of Curtice [1]. The model can be downloaded from Avago's website. An important feature of the , Microwave circuits, IEEE Press, New York 1997 [3] W. R. Curtice, "A MESFET model for use in the design of
Avago Technologies
Original
ATF-531P8 C882 TRANSISTOR ATF531P8 ATF531P83 Avago Mounted Amplifiers BCV62B AN-1222 5988-9546EN

Anaren Microwave

Abstract: microwave office Curtice Consulting and Modelithics Inc. 2003 and 2004 [7] C. Fager, J. Pedro, N. Carvalho, H. Zirath , are grateful to the many useful discussions that have occurred with Walter Curtice of Walter Curtice
-
Original
Anaren Microwave microwave office UGF21030 063700 teflon s-parameter high power fet amplifier schematic

L-07C1N8ST

Abstract: fet curtice nonlinear model in the simulation is based on the work of Curtice [2]. Although this model closely predicts the DC , -54143 PHEMT - A.J. Ward 2. W. R. Curtice, "A MESFET model for use in the design of GaAs integrated circuits
Avago Technologies
Original
L-07C1N8ST atf55143 250R07C8R2FV4T ATF pHEMT sdars ATF-551M4 AV01-0376EN

transistor ajw

Abstract: ATF55143 used in the simulation is based on the work of Curtice[3]. Although this model closely predicts the , circuits, IEEE Press, New York 1997 [3] W. R. Curtice, "A MESFET model for use in the design of GaAs
Avago Technologies
Original
55143

ATF-531P8

Abstract: fet curtice nonlinear model based on the work of Curtice [1]. The model can be downloaded from Agilent's website. An important , , New York 1997 [3] W. R. Curtice, "A MESFET model for use in the design of GaAs integrated circuits
Agilent Technologies
Original
High Dynamic Range FET sot-89 DEMO-ATF-5X1P8 BCV62C RG200D

ATF-55143

Abstract: ECEN4228 non-linear transistor model used in the simulation is based on the work of Curtice [3]. An important feature , Technologies ATF-54143 Enhancement Mode PHEMT ", A.J. Ward. [3] W. R. Curtice, "A MESFET model for use in the
Avago Technologies
Original
ECEN4228 ATF-54143 application notes Component Library AN-1285 S402D 5988-5846EN

transistor C715

Abstract: ATF531 (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice[3]. , . Curtice, "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave
Avago Technologies
Original
transistor C715 ATF531 mesfet fet 5988-9545EN

lna 2.5 GHZ s parameter ads design

Abstract: 5Ghz lna transistor . The non-linear transistor model used in the simulation is based on the work of Curtice [3]. An , . [3] W. R. Curtice, "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans
Agilent Technologies
Original
lna 2.5 GHZ s parameter ads design 5Ghz lna transistor

ATF-54143 application notes

Abstract: ATF54143.s2p transistor model used in the simulation is based on the work of Curtice [3]. The model can be downloaded , Microwave circuits, IEEE Press , New York 1997. [3] W. R. Curtice, "A MESFET Model for Use in the Design
Agilent Technologies
Original
AN1222 ATF54143.s2p atf54143 pHEMT ATF54143 agilent ads 5988-5845EN

equivalent transistor C5001

Abstract: C5001 transistor transistor model used in the simulation is based on the work of Curtice [3]. Although this model closely , may be found on: http://www.agilent.com/eesof-eda 4 15 [3] W. R. Curtice, "A MESFET model
Agilent Technologies
Original
ATF-58143 equivalent transistor C5001 C5001 transistor c815 transistor transistor c815 ATF581433 transistor C633 5988-9554EN

agilent pHEMT transistor

Abstract: transistor C715 point (OPI3). The non-linear transistor model used in the simulation is based on the work of Curtice , . Curtice, "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans Microwave
Agilent Technologies
Original
GaAs pHEMT Low Noise 2x2 vhf fet lna

TRANSISTOR C815

Abstract: equivalent transistor C5001 is based on the work of Curtice[3]. Although this model closely predicts the DC and small signal , [2] Stephan Maas, Nonlinear icrowave circuits, IEEE M Press , New York 1997 [3] W. R. Curtice, "A
Avago Technologies
Original
AV02-0913EN surface mount transistor c633 SOT-343 AMA A LL1005-FH2N2S transistor C5001 900MH 5989-9554EN

atf54143 pHEMT

Abstract: ATF54143.s2p the work of Curtice [3]. The model can be downloaded from Avago Technologies' web-site. An important , . Ward. [2] Stephan Maas, Nonlinear Microwave circuits, IEEE Press , New York 1997. [3] W. R. Curtice
Avago Technologies
Original
RF MESFET S parameters AN-1286 equivalent Closest Infineon Equivalent

circuit diagram of hearing aid using transistors

Abstract: ATF54143.s2p used in the simulation is based on the work of Curtice [3]. The model can be downloaded from Avago , Press, New York 1997. [3] W. R. Curtice, "A MESFET Model for Use in the Design of GaAs Integrated
Avago Technologies
Original
circuit diagram of hearing aid using transistors low cost hearing aid circuit diagram stripline power combiner splitter circuit diagram of digital hearing aid combiner THEORY circuit diagram of low cost hearing aid with applications 5988-5688EN

ATF-54143 application notes

Abstract: ATF54143.s2p Curtice [3]. The model can be downloaded from Agilent's web-site. An important feature of the , , Nonlinear Microwave circuits, IEEE Press, New York 1997. [3] W. R. Curtice, "A MESFET Model for Use in
Agilent Technologies
Original
PIN attenuator ADS model circuit diagram of low cost hearing aid agilent ads combiner Tower Mounted Amplifier circuit diagram of hearing aid Hearing Aid Circuit Diagram

ATF54143.s2p

Abstract: 5988-2336EN . Ward [2] Stephan Maas, Nonlinear Microwave circuits, IEEE Press, New York 1997 [3] W. R. Curtice, "A
Avago Technologies
Original
5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 5989-0852EN

TDMA simulation ADS

Abstract: ATF-50189 work of Curtice [3]. The model can be downloaded from Avago Technologies web site. Linear Analysis
Avago Technologies
Original
ATF-50189 ATF050189 TDMA simulation ADS BTS 3900 a msu 305 ATF0189 800MH 2400MH AV01-0365EN

l0746

Abstract: marking r4 SOT343 Egn Var Egn Var Egn Var Egn Var Egn ATF-54143 curtice ADS Model INSIDE Package Var Egn VAR
Avago Technologies
Original
l0746 marking r4 SOT343 a 1458 L6 sot 665 SC-70 4L/SOT-343 AV01-0620EN AV02-0488EN

5989-0034EN

Abstract: ATF-54143 application notes -54143 curtice ADS Model INSIDE Package Var VAR Egn VAR1 K=5 Z2=85 Z1=30 C C1 C=0.13 pF GATE Port
Agilent Technologies
Original
marking 4FX C0159 ATF-54143-BLK ATF-54143-TR1 ATF-54143-TR2 LNA MARKING 4F 5988-8408EN

l0746

Abstract: Transistor TT 2246 -54143 curtice ADS Model INSIDE Package Var Egn VAR VAR1 K=5 Z2=85 Z1=30 GATE Port G Num=1 TLINP TL4
Agilent Technologies
Original
Transistor TT 2246 marking 4F sot-343 R11450 RD40 transistor c011 5988-0450EN

ATF-54143 application notes

Abstract: 5989-0034EN -54143 curtice ADS Model INSIDE Package Var VAR Egn VAR1 K=5 Z2=85 Z1=30 C C1 C=0.13 pF GATE Port
Agilent Technologies
Original
A004R TRANSISTOR noise figure measurements sot-343 as sot 23 marking code R4 5989-1922EN

marking 4FX

Abstract: AV02-0488EN = AllParams= ATF-54143 curtice ADS Model INSIDE Package Var Egn VAR VAR1 K=5 Z2=85 Z1=30 GATE Port
Avago Technologies
Original

ATF-54143 application notes

Abstract: Curtice = wldsmax= wPmax= AllParams= ATF-54143 curtice ADS Model INSIDE Package Var VAR Egn VAR1 K=5 Z2
Agilent Technologies
Original
PHEMT marking code a transistor C013 transistor 4F LNA SOT c5 87 transistor code 458 055 RHO marking 5988-2722EN 5988-6275EN

RGS 13/1

Abstract: ATF-54143 application notes -54143 curtice ADS Model INSIDE Package Var VAR Egn VAR1 K=5 Z2=85 Z1=30 C C1 C=0.13 pF GATE Port
Agilent Technologies
Original
RGS 13/1 marking code 4f, package soT-343 zo 107 atf-54143-tr1g 5989-3751EN

ATF-54143 application notes

Abstract: transistor 4F LNA -54143 curtice ADS Model INSIDE Package Var VAR Egn VAR1 K=5 Z2=85 Z1=30 C C1 C=0.13 pF GATE Port
Agilent Technologies
Original
marking R5 sc-70

LNA MARKING 4F

Abstract: Curtice cds=68*W/200 Var Egn Var Egn VAR VAR7 Ig=47*W/200 ATF-54143 curtice ADS Model VAR
Avago Technologies
Original
MW725 atf-54143-blkg

HP RF TRANSISTOR GUIDE

Abstract: MRF286 , Daren Bridges, Tao Liang, Eric Shumate and W. R. Curtice, "A New Dynamic Electro­Thermal Nonlinear Model
Motorola
Original
HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 High frequency MRF transistor motorola MRF SG384/D

l0746

Abstract: Curtice = wldsmax= wPmax= AllParams= ATF-54143 curtice ADS Model INSIDE Package Var VAR Egn VAR1 K=5 Z2
Agilent Technologies
Original
transistor datasheet s parameters noise Transistor C 1279

ATF-54143-TR1G

Abstract: l0746 cds=68*W/200 Var Egn Var Egn VAR VAR7 Ig=47*W/200 ATF-54143 curtice ADS Model VAR
Avago Technologies
Original
5.8 ghz amplifier 10w transistor c4

ATF-54143-BLKG

Abstract: ATF54143 = AllParams= Var Egn Var Egn Var Egn Var Egn Var Egn ATF-54143 curtice ADS Model INSIDE Package Var
Avago Technologies
Original
diagram transistor tt 2140 ATF-54143BLKG

Transistor TT 2246

Abstract: TT 2246 transistor -54143 curtice ADS Model INSIDE Package Var Egn C C2 C=0.1 pF GATE Port G Num=1 VAR VAR1 K
Agilent Technologies
Original
TT 2246 transistor o2nf 88759/06-PM60J-01

JD 1803

Abstract: philips diode PH 33D model, S-parameter uniformity, large signal model parameters for Curtice-Cubic Model, device handling
-
OCR Scan
JD 1803 philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC

b1415

Abstract: GAAS FET CROSS REFERENCE 1.11 0 0 1 0.1 0.04 0.056 Excelics EPB018A Curtice-Cubic GaAsFET Model CURTICE3 , Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs (Curtice-Ettenburg Model) Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS , Model Parameters for Curtice-Cubic Model For High Efficiency Heterojunction Power FETs (Curtice-Ettenburg Model) Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS
-
Original
b1415 GAAS FET CROSS REFERENCE power fet 70 mil micro-X Package gaas fet 70 mil micro-X Package EPA240BV N5 micro-X Package RTC/5/01/PSINTRO