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Part : CZT122 TR Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.3199 Price Each : $0.3679
Part : CZT122 TR Supplier : Central Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.50 Price Each : $0.62
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CZT122 Datasheet

Part Manufacturer Description PDF Type
CZT122 Central Semiconductor BJT, NPN, Darlington Transistor, IC 5A Original
CZT122 Central Semiconductor SMD Bipolar Power Transistor NPN Darlington Original
CZT122 Kexin Darlington Transistors Original
CZT122 TY Semiconductor TY Equivalent - Darlington Transistors - SOT-223 Original
CZT122 Central Semiconductor COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Scan

CZT122

Catalog Datasheet MFG & Type PDF Document Tags

pd 223

Abstract: CZT122 Central CZT122 NPN CZT127 PNP TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low , =3.0A, f=1.0MHz VCB=10V, IE=0, f=1.0MHz (CZT122) Cob VCB=10V, IE=0, f=1.0MHz (CZT127) 100 V , ) Central TM CZT122 NPN CZT127 PNP Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON
Central Semiconductor
Original
pd 223

transistor darlington npn

Abstract: DARLINGTON 30A 100V npn Central CZT122 NPN CZT127 PNP TM Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed , =4.0V, IC=3.0A, f=1.0MHz VCB=10V, IE=0, f=1.0MHz (CZT122) Cob VCB=10V, IE=0, f=1.0MHz (CZT127) V , Semiconductor Corp. CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR SOT
Central Semiconductor
Original
transistor darlington npn DARLINGTON 30A 100V npn power darlington npn transistor

Darlington 30A

Abstract: DARLINGTON 30A 100V npn CZT122 NPN CZT127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low , =3.0V, IC=3.0A Cob VCE=4.0V, IC=3.0A, f=1.0MHz VCB=10V, IE=0, f=1.0MHz (CZT122) Cob VCB=10V, IE , pF R4 (1-March 2010) CZT122 NPN CZT127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER
Central Semiconductor
Original
Darlington 30A 300 W npn darlington power transistors
Abstract: CZT122 NPN CZT127 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low , =3.0V, IC=3.0A fT Cob VCE=4.0V, IC=3.0A, f=1.0MHz VCB=10V, IE=0, f=1.0MHz (CZT122) Cob VCB , 300 pF R4 (1-March 2010) CZT122 NPN CZT127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER -
Original
Abstract: CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Centrar Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier , VCE=3.0V, Iq =3.0A Vq E=4.0V, Iq =3.0A, f=1.0MHz VCB=10V, lE=0, f=1.0MHz (CZT122) VCB=10V, lE=0, f , TM Semiconductor Corp. CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR -
OCR Scan
CP117 CP517
Abstract: CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Central" semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier , Vc e =4.0V, lc =3.0A, f=1.0MHz VCB=10V, lE=0, f=1.0MHz (CZT122) VCB=10V, lE=0, f=1.0MHz (CZT127) 1000 , pF C0b Cob R2 (26-September 2002) 634 Central Semiconductor Corp TM CZT122 NPN -
OCR Scan
Abstract: CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Central DESCRIPTION: swiHconductor Corp. POWER 223 SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power , stg ©JA The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington , =1,0MHz (CZT122) VCB=10V, lE=0, f=1.0MHz (CZT127) MIN MAX 500 200 2.0 UNITS nA ^iA mA V V V V -
OCR Scan

darlington transistor power

Abstract: IC ne NE W CZT122 NPN CZT127 PNP Central DESCRIPTION: TM Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR POWER TM 223 The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. SOT-223 CASE MAXIMUM RATINGS: (TA , =3.0A, f=1.0MHz 4.0 VCB=10V, IE=0, f=1.0MHz (CZT122) VCB=10V, IE=0, f=1.0MHz (CZT127) MAX 500 200 2.0 2.0
Central Semiconductor
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darlington transistor power IC ne ic30a

CZT122

Abstract: CZT127 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT122 SOT-223 TRANSISTOR (NPN) 1 FEATURES Complementary to CZT127 1. BASE Silicon Power Darlington Transistors 2. COLLECTOR Low speed switching and amplifier applications 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO , =1.0MHz 4 MHz 200 pF Typical Characteristics TypicalCharacteristics CZT122 CZT122
Jiangsu Changjiang Electronics Technology
Original
darlington transistor sot223 5A

darlington transistor sot223 5A

Abstract: CZT122 SOT-223 Transistor(NPN) 1. BASE 2. COLLECTOR 3. EMITTER 1 SOT-223 Features Complementary to CZT127 Silicon Power Darlington Transistors Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter , =0 VEB=5V,IC=0 VCE=3V,IC=0.5A CZT122 SOT-223 Transistor(NPN) Typical Characteristics TypicalCharacteristics CZT122 -
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Original

SILICON COMPLEMENTARY transistors darlington

Abstract: CZT122 0 CZT122 NPN CZT127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Hi 223 SOT-223 CASE Central Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage , =3.0V, lc=3.0A fj VqE=4.0V, lc=3.0A, f=1.0MHz cob VCB=1 ov. 'E=°.f=1 0MHz (CZT122) cob VCB=10V, lE=0, f
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OCR Scan
SILICON COMPLEMENTARY transistors darlington
Abstract: # CZT122 CZT127 Central" NPN PNP Sem iconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. POWER 223 SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL v , ^ob C0b Vq E=4.0V, lc =3.0A, f=1.0MHz 4.0 MHz VCB=10V, lE=0, f=1.0MHz (CZT122) 200 -
OCR Scan
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT122 SOT-223 TRANSISTOR (NPN) FEATURES Complementary to CZT127 1. BASE Silicon Power Darlington Transistors 2. COLLECTOR Low speed switching and amplifier applications 3. EMITTER MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Jiangsu Changjiang Electronics Technology
Original

CZT122

Abstract: CZT127 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT127 SOT-223 TRANSISTOR (PNP) FEATURES 1 Complementary to CZT122 1. BASE Silicon Power Darlington Transistors 2. COLLECTOR Low speed switching and amplifier applications 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base
Jiangsu Changjiang Electronics Technology
Original

"Darlington Transistor"

Abstract: CJD122 PROCESS CP230 Power Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 80 MILS Die Thickness 8 MILS Base Bonding Pad Area 18 X 27 MILS Emitter Bonding Pad Area 34 X 34 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Pd/Ag (20,000Å) Geometry GROSS DIE PER 4 INCH WAFER 1,445 PRINCIPAL DEVICE TYPES CZT122 CJD122 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110
Central Semiconductor
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czt1

"Darlington Transistor"

Abstract: darlington transistor power PROCESS CP230 Power Transistors NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 80 MILS Die Thickness 8 MILS Base Bonding Pad Area 18 X 27 MILS Emitter Bonding Pad Area 34 X 34 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Pd/Ag (20,000Å) GEOMETRY GROSS DIE PER 4 INCH WAFER 1,445 PRINCIPAL DEVICE TYPES CZT122 CJD122 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel
Central Semiconductor
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smd npn darlington

Abstract: CZT122 Transistors IC SMD Type Surface Mount NPN Silicon Power Darlington Transistor KZT122 (CZT122) SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 High current (max. 5A). Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 3 2 3 Emitter +0.1 0.70-0.1 2.9 4.6 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit
Kexin
Original
smd npn darlington

czt1

Abstract: IC SMD Type Product specification KZT122 (CZT122) SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 High current (max. 5A). Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 3 2 3 Emitter +0.1 0.70-0.1 2.9 4.6 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter
TY Semiconductor
Original
Abstract: CZT127 SOT-223 Transistor(PNP) 1. BASE 2. COLLECTOR SOT-223 1 3. EMITTER Features Complementary to CZT122 Silicon Power Darlington Transistors Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -100 -100 -5 -5 1 150 -65-150 Units V V -
Original

CJD122

Abstract: CP230 PROCESS CP230 Power Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 x 80 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 18 x 27 MILS Emitter Bonding Pad Area 34 x 34 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Pd/Ag - 20,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,445 PRINCIPAL DEVICE TYPES CZT122 CJD122 R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m
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Original

44H11

Abstract: A 3150 ic Darlington NPN NPN Low VCE(SAT) CJD112 CZT122 CJD117 CZT127 Devices are listed in order
Central Semiconductor
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44H11 CXT7090L A 3150 ic 3055 sot-223 45h11 IC A 3150 SOT 363 darlington SOIC-16 TLM621 TLM621H TLM322 TLM622 TLM832

World transistors and ic

Abstract: CZT3055 CZT32C CZT122 CZT127 CZT3055 CZT2955 CZT5338 CZT3150 CZT2680 CZTA44HC Description Amplifier
Central Semiconductor
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CZT31C CXT3150 World transistors and ic small signal bipolar transistors datasheet transistors sot-223 switch NPN SOT high power amplifier sot89 100 amp npn darlington power transistors

1N4007 diode SOD 80

Abstract: 1N4148 SMA CMPT3646 CJD31C CZT31C CJD32C CZT32C CJD41C CJD42C CJD47 CJD50 CJD112 CJD117 CJD122 CZT122 CJD127 CZT127
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OCR Scan
1N4007 diode SOD 80 1N4148 SMA 2n2222a SOT23 2N2369 SOT-23 smd 2n3055 2n3904 smd BAS28 CLL914 CMPD2836 CMPD2838 CMPD7000 CLL4448
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