NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ; Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-s) Tvj Tstg cont.; per thyristor / per module sin. 180; per thyristor / per module rec. 120; per thyristor / per module per thyristor / per module Visol Ms Mt a , SEMIKRON, leading manufacturer of diode thyristor power semiconductor module. Seite 1 von 5 SKKT 250, SKKH 250 VRSM Thyristor / Diode Modules V 900 1300 1500 1700 1900 SEMIPACK , Thyristor with amplifying gate UL recognized, file no. E 63 532 Typical Applications DC motor control ... | Original |
5 pages, |
semikron thyristor heat CS thyristor 250/08E 250/12E 250/14E 250/16E 250/18E 250/08E abstract |
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| Abstract: turn-off Vcc Von t Vt voltage Thyristor trigged Trig level t Output voltage Output shut off and Error output activated Vcc t NJM3548 NJM3548 Vcc Von Input Vt Thyristor structure Error To fault detector Cm T2 Cs T1 T3 Rsense Output GND ... | Original |
4 pages, |
NJM3548 datasheet abstract |
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| Abstract: MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR FGC800B-130DS FGC800B-130DS HIGH POWER INVERTER USE , Thyristor q ITQRM Repetitive controllable on-state current . 800A q IT(AV) Average on-state , 800A, CS = 0.1ç¤", RS = 10 Tj = 25/125癈, f = 60Hz, IGM = 90A, diG/dt = 50A/ç¥ (see Fig. 1, 2) IT = 800A, VR = 3000V, Tj = 25/125癈 (see Fig. 4, 5) CS = 0.1ç¤", RS= 10 Operation Junction temperature , MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR FGC800B-130DS FGC800B-130DS HIGH POWER INVERTER USE PRESS PACK ... | Original |
4 pages, |
thyristor 800A thyristor 1200A symmetrical gate commutated thyristor FGC800B-130DS CS thyristor 1200A thyristor gate control circuit thyristor 1000A FGC800B-130DS abstract |
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| Abstract: MITSUBISHI GCT(Gate Commutated Turn-of£> THYRISTOR FGC1500B-130DS FGC1500B-130DS HIGH POWER INVERTER USE PRESS PACK TYPE •Symmetrical GCT Thyristor •Itqrm Repetitive controllable on state current. 1500A •It(av , state current It=1500A, Vd=3000V, Tj=25/125deg Cs=0.2jiF, Rs=5ohm, f=60Hz Igm=90A, dÌG/dt=50A/|is (See , 1000 A/jxs current Cs=0.2|iF, Rs=5olim (See Fig.4,5) Vfgm Peak forward gate voltage 10 V Vrgm , Turn-of£) THYRISTOR FGC1500B-130DS FGC1500B-130DS HIGH POWER INVERTER USE PRESS PACK TYPE Symbol Parameter Condition ... | OCR Scan |
9 pages, |
Power Thyristor 1500A gct thyristor FGC1500B-130DS CS thyristor sinewave inverter circuit GATE TURN OFF THYRISTOR 400 V 100 A symmetrical gate commutated thyristor press pack thyristor power inverter FGC1500B-130DS abstract |
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| Abstract: ) See tq rec. 120; per thyristor / per module 0,13 / 0,065 K/W Rth(c-s) per thyristor , Symbol Conditions Thyristor / Diode Modules ITAV sin. 180; Tc = 85 (100) °C ID SKKH 330 , high reliability Thyristor with amplifying gate UL recognized, file no. E 63 532 Units Tvj = , max. 0,25 V IGD Tvj = 130 °C; d.c. max. 10 mA Rth(j-c) cont.; per thyristor / per module 0,11 / 0,055 K/W Rth(j-c) sin. 180; per thyristor / per module 0,116 / 0,058 K/W ... | Original |
1 pages, |
semipack skkt 250 semipack skkt 330 CS 15 thyristor SKKT 330 16E datasheet abstract |
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| Abstract: MITSUBISHI GCT(Gate Commutated Turn-of£) THYRISTOR FGC800B-130DS FGC800B-130DS HIGH POWER INVERTER USE PRESS PACK TYPE FGC800B- FGC800B- 130DS 130DS M C O ja tfpr Vk ^^"^KKmKtU11^ SWM »Symmetrical GCT Thyristor JflM^ -^mC IB , , Tj=25/125deg Cs=0.1pF, Rs=10ohm, f=60Hz Igm=90A, dio/dt=50A/)is (See Fig. 1,2) 1000 A/ps diR/dt Critical rate of rise of reverse recovery current It=800A, Vr=3000V, Tj=25/125deg Cs=0.1pF, Rs=10ohm (See , (Gate Commutated Turrrof£> THYRISTOR FGC800B-130DS FGC800B-130DS HIGH POWER INVERTER USE PRESS PACK TYPE Symbol ... | OCR Scan |
9 pages, |
40QA CS thyristor thyristor cd gct thyristor thyristor 1200A press pack thyristor symmetrical gate commutated thyristor thyristor 1000A thyristor cdi TSH-383-A thyristor 800A FGC800B-130DS FGC800B- FGC800B-130DS abstract |
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| Abstract: thyristor / per module 0,17 / 0,085 K/W Rth(j-c) sin. 180; per thyristor / per module 0,18 / 0,09 K/W Rth(j-c) rec. 120; per thyristor / per module 0,2 / 0,1 K/W Rth(c-s) per thyristor / per module 0,1 / 0,05 K/W Tvj - 40 . + 125 °C Tstg - 40 . + 125 °C , Symbol Conditions Thyristor / Diode Modules ITAV sin. 180; Tc = 85 (100) °C ID SKKT 162 ... | Original |
1 pages, |
CS 110 thyristor datasheet abstract |
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| Abstract: SKKT92B16E sin. 180; per thyristor / per module 0,3 / 0,15 K/W Rth(j-c) rec. 120; per thyristor / per module 0,32 / 0,16 K/W Rth(c-s) per thyristor / per module 0,2 / 0,1 K/W Tvj - 40 , 92/14E 92/14E 1700 Thyristor / Diode Modules SKKT 92/08E 92/08E 1200 1500 SEMIPACK® 1 800 , IGD Tvj = 125 °C; d.c. max. 6 mA Rth(j-c) cont.; per thyristor / per module 0,28 / 0 ... | Original |
1 pages, |
92B16 92B14E 92B12E 92/08E 92/12E 92/14E 92/16E 92/18E 92B08E 92B16E 92B18E 92/08E abstract |
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| Abstract: the assembly instructions Tvj = 125 °C IH 1) See tq sin. 180; per thyristor / per module 0,69 / 0,35 K/W Rth(j-c) rec. 120; per thyristor / per module 0,73 / 0,37 K/W Rth(c-s) per thyristor / per module 0,2 / 0,1 K/W Tvj - 40 . + 125 °C Tstg - 40 , 42/14E 42/14E 1700 Thyristor / Diode Modules SKKT 42/08E 42/08E 1200 1500 SEMIPACK® 1 800 , max. 6 mA Rth(j-c) cont.; per thyristor / per module 0,65 / 0,33 K/W Rth(j-c) SKKH ... | Original |
1 pages, |
SKKT 12E 42B16E skkt 40 42B12E CS 110 thyristor 42B14E 42/08E 42/12E 42/14E 42/16E 42/18E 42B08E 42B18E 42/08E abstract |
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| Abstract: tq sin. 180; per thyristor / per module 0,3 / 0,15 K/W Rth(j-c) rec. 120; per thyristor / per module 0,32 / 0,16 K/W Rth(c-s) per thyristor / per module 0,2 / 0,1 K/W , SKKH 106/14E 106/14E 1700 Thyristor / Diode Modules SKKT 106/08E 106/08E 1200 1500 SEMIPACK® 1 800 , max. 0,25 V IGD Tvj = 130 °C; d.c. max. 6 mA Rth(j-c) cont.; per thyristor / per ... | Original |
1 pages, |
skkt 120 106B12 106B 106B18E 106B16E 106B14E 106B12E 106/08E 106/12E 106/14E 106/16E 106/18E 106B08E 106/08E abstract |
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| gas lighter or ignitor such as : cookers / gas boilers / gas hobs. Th : Thyristor for switching FUNCTION INTEGRATION DEDICATED THYRISTOR STRUCTURE FOR CAPACITANCE DISCHARGE IGNITION OPERATION HIGH PULSE Repetitive surge peak on state current for thyristor tp = 10 m s ( note 1) 240 A I FRM Repetitive surge peak .7 V a T 0.3 V/5C THYRISTOR (Th) and ZENER (Z) PARAMETERS -20 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 Tj (5 gate of the thyristor Th which fires. The firing of the thyristor causes an alternating current to flow www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5202-v2.htm |
STMicroelectronics | 14/06/1999 | 7.42 Kb | HTM | 5202-v2.htm |
| gas lighter or ignitor such as : cookers / gas boilers / gas hobs. Th : Thyristor for switching FUNCTION INTEGRATION DEDICATED THYRISTOR STRUCTURE FOR CAPACITANCE DISCHARGE IGNITION OPERATION HIGH PULSE Repetitive surge peak on state current for thyristor tp = 10 m s ( note 1) 240 A I FRM Repetitive surge peak .7 V a T 0.3 V/5C THYRISTOR (Th) and ZENER (Z) PARAMETERS -20 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 Tj (5 gate of the thyristor Th which fires. The firing of the thyristor causes an alternating current to flow www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5202-v1.htm |
STMicroelectronics | 02/04/1999 | 7.46 Kb | HTM | 5202-v1.htm |
| : MONOLITHIC FIRE LIGHTER FUNCTION INTEGRATION DEDICATED THYRISTOR STRUCTURE FOR CAPACITANCE DISCHARGE IGNITION ignitor such as : cookers / gas boilers / gas hobs. Th : Thyristor for switching operation. Z : Zener connected) Symbol Parameter Value Unit I TRM Repetitive surge peak on state current for thyristor tp = 10 m THYRISTOR (Th) and ZENER (Z) PARAMETERS -20 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 Tj (5C) k = I (Tj) / I (255C flows through the gate of the thyristor Th which fires. The firing of the thyristor causes an www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3616-v2.htm |
STMicroelectronics | 14/06/1999 | 7.21 Kb | HTM | 3616-v2.htm |
| : MONOLITHIC FIRE LIGHTER FUNCTION INTEGRATION DEDICATED THYRISTOR STRUCTURE FOR CAPACITANCE DISCHARGE IGNITION ignitor such as : cookers / gas boilers / gas hobs. Th : Thyristor for switching operation. Z : Zener connected) Symbol Parameter Value Unit I TRM Repetitive surge peak on state current for thyristor tp = 10 m THYRISTOR (Th) and ZENER (Z) PARAMETERS -20 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 Tj (5C) k = I (Tj) / I (255C flows through the gate of the thyristor Th which fires. The firing of the thyristor causes an www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3616-v1.htm |
STMicroelectronics | 02/04/1999 | 7.25 Kb | HTM | 3616-v1.htm |
| top, barbecue, water heater, HVAC, portable ignitor, insect killers. Th: Thyristor for the switching THYRISTOR STRUCTURE FOR FAST CAPACITIVE DISCHARGE HIGH PULSE CURRENT CAPABILITY I FRM = 75A @ tp = 10 m S TRM Repetitive surge peak on state current for thyristor tp = 10 m s ( note 1) 75 A I FRM Repetitive 500 m A V T I T = 2A tp 3 1ms Tj = 255C 1.7 1.7 V a t 0.07 0.16 V/5C THYRISTOR (Th) and ZENER (Z the Zener diode Z. Then, a current flows through this Zener diode into the gate of the thyristor Th www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6532-v1.htm |
STMicroelectronics | 02/04/1999 | 7.91 Kb | HTM | 6532-v1.htm |
| top, barbecue, water heater, HVAC, portable ignitor, insect killers. Th: Thyristor for the switching THYRISTOR STRUCTURE FOR FAST CAPACITIVE DISCHARGE HIGH PULSE CURRENT CAPABILITY I FRM = 75A @ tp = 10 m S TRM Repetitive surge peak on state current for thyristor tp = 10 m s ( note 1) 75 A I FRM Repetitive 500 m A V T I T = 2A tp 3 1ms Tj = 255C 1.7 1.7 V a t 0.07 0.16 V/5C THYRISTOR (Th) and ZENER (Z the Zener diode Z. Then, a current flows through this Zener diode into the gate of the thyristor Th www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6532-v2.htm |
STMicroelectronics | 14/06/1999 | 7.87 Kb | HTM | 6532-v2.htm |
| CIRCUIT FOR CAPACITANCE DISCHARGE SYSTEM CONTROL. DEDICATED THYRISTOR STRUCTURE FOR IGNITION OPERATION MAXIMUM RATINGS : THYRISTOR TH Symbol Parameter Value Unit T stg T j Storage temperature range Operating DRM V DRM rated Tj= 25 5 C MAX 50 m A Tj= 125 5 C MAX 1 mA ELECTRICAL CHARACTERISTICS : THYRISTOR TH I G through the thyristor gate (Th) The firing of the SCR causes an alternating discharge current Ic applications using the diode D2 in anti-parallel with the thyristor. In this case the rectifier diode D must www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3744-v1.htm |
STMicroelectronics | 02/04/1999 | 8.13 Kb | HTM | 3744-v1.htm |
| ) MONOLITHIC CIRCUIT FOR CAPACITANCE DISCHARGE SYSTEM CONTROL. DEDICATED THYRISTOR STRUCTURE FOR IGNITION -state voltage T j = 125 5 C 400 V ABSOLUTE MAXIMUM RATINGS : THYRISTOR TH Symbol Parameter Value Unit T A ELECTRICAL CHARACTERISTICS : THYRISTOR TH Symbol Test Conditions Value Unit I R V R = V RRM Tj= 25 5 thyristor gate (Th) The firing of the SCR causes an alternating discharge current Ic through the capacitor adapted to applications using the diode D2 in anti-parallel with the thyristor. In this case the www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3744.htm |
STMicroelectronics | 20/10/2000 | 10.44 Kb | HTM | 3744.htm |
| FOR CAPACITANCE DISCHARGE SYSTEM CONTROL. DEDICATED THYRISTOR STRUCTURE FOR IGNITION OPERATION MAXIMUM RATINGS : THYRISTOR TH Symbol Parameter Value Unit T stg T j Storage temperature CHARACTERISTICS : THYRISTOR TH Symbol Test Conditions Value Unit I R V R = V RRM Tj= 25 5 C through the thyristor gate (Th) The firing of the SCR causes an alternating discharge current Ic diode D2 in anti-parallel with the thyristor. In this case the rectifier diode D must withstand a www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3744-v3.htm |
STMicroelectronics | 07/12/2000 | 9.84 Kb | HTM | 3744-v3.htm |
| CIRCUIT FOR CAPACITANCE DISCHARGE SYSTEM CONTROL. DEDICATED THYRISTOR STRUCTURE FOR IGNITION OPERATION MAXIMUM RATINGS : THYRISTOR TH Symbol Parameter Value Unit T stg T j Storage temperature range Operating DRM V DRM rated Tj= 25 5 C MAX 50 m A Tj= 125 5 C MAX 1 mA ELECTRICAL CHARACTERISTICS : THYRISTOR TH I G through the thyristor gate (Th) The firing of the SCR causes an alternating discharge current Ic applications using the diode D2 in anti-parallel with the thyristor. In this case the rectifier diode D must www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3744-v2.htm |
STMicroelectronics | 14/06/1999 | 8.09 Kb | HTM | 3744-v2.htm |