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CPS057 Datasheet

Part Manufacturer Description PDF Type
CPS057 Central Semiconductor Chip Form: SILICON CONTROLLED RECTIFIER Original

CPS057

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PROCESS CPS057 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 57 x 57 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 24 x 14 MILS Gate Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al - 45,000à Back Side Metalization Al/Mo/Ni/Ag - 20,000Ã/5,000Ã/5,000Ã/2,000à , -4M BACKSIDE ANODE R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPS057 Typical Central Semiconductor
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CS39-4D 2N2323 2N2329 CS223-4M
Abstract: PROCESS CPS057 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 57 x 57 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 24 x 14 MILS Gate Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CS39-4D 2N2323 thru 2N2329 BACKSIDE ANODE 145 Adams Central Semiconductor
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Abstract: .CPS057 . 266 2N2369 .CP207 . 52 -
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BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 1N456 CPD64 1N456A 1N457 1N457A 1N458
Abstract: o SCRs Process CPS041 CPS053 CPS057 CPS090 IT (AMPS) 0.8 2.0 4.0 8.0 Central Semiconductor
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UJT 2n3904 transistor 2N4033 2n4209 datasheet mj15003 equivalent ujt 2N6027 transistor 2N5401 CS89M CS223-2M CSDD-12M CSDD-16M CSDD-25M CS220-35M