NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: PROCESS CPS057 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 57 x 57 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 24 x 14 MILS Gate Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al - 45,000Ã... Back Side Metalization Al/Mo/Ni/Ag - 32,000Ã... GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CS39-4D CS39-4D 2N2323 2N2323 thru 2N2329 2N2329 BACKSIDE ANODE 145 Adams ... | Original |
1 pages, |
CS39-4D CPS057 2N2329 2N2323 CPS057 abstract |
| Abstract: 2N5133 BF244 2N2270 2N2270 .CP305 CP305 . 86 2N2323 2N2323 thru 2N2329 2N2329 .CPS057 ... | Original |
18 pages, |
2N3563 2n6517 242 2N6028 2N718A 2N3569 BRX49 equivalent bf256 BD346 CP588V 1N5802 2n3694 datasheet 2n5248 2n5910 MPS5771 BD347 1N456 CPD64 1N456 abstract |
| Abstract: o SCRs Process CPS041 CPS041 CPS053 CPS053 CPS057 CPS090 CPS090 IT (AMPS) 0.8 2.0 4.0 8.0 ... | Original |
10 pages, |
MJE13003 mj15004 NPN Transistor 2N3055 darlington ujt transistor mj15003 CPS110 CPQ110 CPD98V CPD92X 1n4148 CPD93V transistor 2N5401 mje150 2N4393 BAV45 datasheet abstract |